Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

K S A 9 3 1 KSA931 Low Frequency Amplifier & Medium Speed Switching • Complement to KSC2331 • Collector-Base Voltage : V = -80V CBO • Collector Power Dissipation : P =1W C 1 TO-92L 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -60 V CEO V Emitter-Base Voltage -8 V EBO I Collector Current -700 mA C P Collector Power Dissipation 1 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100µA, I =0 -80 V CBO C E BV Collector-Emitter Breakdown Voltage I = -10mA, I =0 -60 V CEO C B BV Emitter-Base Breakdown Voltage I = -100µA, I =0 -8 V EBO E C I Collector Cut-off Current V = -60V, I =0 -0.1 µA CBO CB E I Emitter Cut-off Current V = -5V, I =0 -0.1 µA EBO EB C h * DC Current Gain V = -2V, I = -50mA 40 240 FE CE C V (sat) * Collector-Emitter Saturation Voltage I = -500mA, I = -50mA -0.3 -0.7 V CE C B V (sat) * Base-Emitter Saturation Voltage I = -500mA, I = -50mA -0.9 -1.2 V BE C B f Current Gain Bandwidth Productor V = -10V, I = -50mA 100 MHz T CE C C Output Capacitance V = -10V, I =0, f=1MHz 13 pF ob CB E * Pulse Test: PW≤350µs, Duty cycle≤2% h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

K Typical Characteristics S A 9 3 1 -500 1000 -450 VCE = -2V URRENT --345000 IB = -1.I8B µ=A -1IB.4 =µ A-1.2µA AIN R C -300 IB = -1.0µA T G O N CT -250 IB = -0.8µA RE 100 E R I[mA], COLLC ---112-50500000 IB I=B I=-B0 -=.06 .-µ40Aµ.2AµA h, DC CUFE 0 10 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain E -10 -1000 G TA IC = 10 IB VCE = -2V L O ON V RENT RATI -1 VBE(sat) CUR -100 ATU OR V(sat), V(sat)[V], SBECE -0.1 VCE(sat) I[mA], COLLECTC -10 -1 -0.01 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -10 -100 -1000 I[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE C Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage Collector-Emitter Saturation Voltage -10000 1.4 1.2 T N N E O R CURR -1000 SSIPATI 01..80 CTO *200ms R DI E E 0.6 L W I[mA], COLC -100 1. Ta = 25oC DC Operation P[W], POC 00..24 2. * Single Pulse -10 0.0 -1 -10 -100 -1000 0 25 50 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE Ta[oC], AMBIENT TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

K Package Dimensions S A 9 3 1 TO-92L 4.90 ±0.20 0 2 0. ± 0 0 8. 0.70MAX. 0 0 2 1 0. 0. ±0 ±0 0.80 ±0.10 7 0 40 1. 1. 1.00MAX. 0. ± 0 5 3. 1 0.50 ±0.10 1.27TYP [1.27 ±0.20] 2.54 TYP 0.45 ±0.10 0 2 0. ± 45 3.90 ±0.20 1. 0 2 0. ± 0 3.9 0.10 ± 5 4 0. Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002

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