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  • 型号: HMC478ST89E
  • 制造商: Hittite
  • 库位|库存: xxxx|xxxx
  • 要求:
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HMC478ST89E产品简介:

ICGOO电子元器件商城为您提供HMC478ST89E由Hittite设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 HMC478ST89E价格参考¥4.00-¥5.00。HittiteHMC478ST89E封装/规格:RF 放大器, 射频放大器 IC 通用 0Hz ~ 4GHz SOT-89。您可以下载HMC478ST89E参考资料、Datasheet数据手册功能说明书,资料中有HMC478ST89E 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

射频/IF 和 RFID

描述

IC MMIC AMP HBT 4GHZ SOT-89

产品分类

RF 放大器

品牌

Hittite Microwave Corporation

数据手册

点击此处下载产品Datasheet

产品图片

P1dB

18dBm

产品型号

HMC478ST89E

RF类型

通用

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

供应商器件封装

SOT-89

其它名称

1127-1415
1127-1415-1
1127-1415-ND

包装

剪切带 (CT)

噪声系数

3dB ~ 4dB

增益

22dB

封装/外壳

TO-243AA

标准包装

1

测试频率

-

电压-电源

5 V ~ 8 V

电流-电源

62mA

频率

0Hz ~ 4GHz

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PDF Datasheet 数据手册内容提取

HMC478ST89 478ST89E / v05.0710 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Typical Applications Features 8 The HMC478ST89 / HMC478ST89E is an ideal RF/IF P1dB Output Power: +18 dBm gain block & LO or PA driver: Gain: 22 dB • Cellular / PCS / 3G Output IP3: +30 dBm T • Fixed Wireless & WLAN Cascadable 50 Ohm I/Os M • CATV, Cable Modem & DBS Single Supply: +5V to +8V S • Microwave Radio & Test Equipment Industry Standard SOT89 Package - K Robust 1,000V ESD, Class 1C C Included in the HMC-DK001 Designer’s Kit O L Functional Diagram General Description B The HMC478ST89 & HMC478ST89E are SiGe N Heterojunction Bipolar Transistor (HBT) Gain Block AI MMIC SMT amplifi ers covering DC to 4 GHz. Pack- G aged in an industry standard SOT89, the amplifi er can be used as a cascadable 50 Ohm RF/IF gain & stage as well as a LO or PA driver with up to +20 dBm R output power. The HMC478ST89(E) offers 22 dB of E gain with a +30 dBm output IP3 at 850 MHz while V requiring only 62mA from a single positive supply. I R The Darlington feedback pair used results in reduced D sensitivity to normal process variations and excellent gain stability over temperature while requiring a - S minimal number of external bias components. R Electrical Specifi cations, Vs= 5V, Rbias= 18 Ohm, T = +25° C E A FI Parameter Min. Typ. Max. Units I DC - 1.0 GHz 19 22 dB L 1.0 - 2.0 GHz 16 19 dB P Gain 2.0 - 3.0 GHz 13 16 dB M 3.0 - 4.0 GHz 11 14 dB Gain Variation Over Temperature DC - 4 GHz 0.015 0.02 dB/ °C A DC - 1.0 GHz 15 dB Input Return Loss 1.0 - 3.0 GHz 10 dB 3.0 - 4.0 GHz 13 dB DC - 3.0 GHz 13 dB Output Return Loss 3.0 - 4.0 GHz 15 dB Reverse Isolation DC - 4 GHz 20 dB 0.5 - 1.0 GHz 15 18 dBm 1.0 - 2.0 GHz 13 16 dBm Output Power for 1 dB Compression (P1dB) 2.0 - 3.0 GHz 10 13 dBm 3.0 - 4.0 GHz 8 11 dBm 0.5 - 2.0 GHz 30 dBm Output Third Order Intercept (IP3) 2.0 - 3.0 GHz 28 dBm (Pout= 0 dBm per tone, 1 MHz spacing) 3.0 - 4.0 GHz 25 dBm DC - 2.0 GHz 3 dB Noise Figure 2.0 - 4.0 GHz 4 dB Supply Current (Icq) 62 82 mA Note: Data taken with broadband bias tee on device output. InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 8 - 104 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC478ST89 / 478ST89E v05.0710 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Broadband Gain & Return Loss Gain vs. Temperature 8 30 30 20 25 B) 10 20 d T NSE ( 0 SS2111 N (dB) 15 M RESPO -10 S22 GAI 10 ++2855CC S -40C - -20 5 K C -30 0 O 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 FREQUENCY (GHz) FREQUENCY (GHz) L B N I Input Return Loss vs. Temperature Output Return Loss vs. Temperature A G 0 0 & -5 +25C B) B) -5 +85C R d -10 d -40C S ( S ( E S S O O V L -15 L -10 N N I R R R U +25C U RET -20 +-4805CC RET -15 D -25 - S -30 -20 0 1 2 3 4 5 0 1 2 3 4 5 R FREQUENCY (GHz) FREQUENCY (GHz) E I F I L P Reverse Isolation vs. Temperature Noise Figure vs. Temperature M 0 10 A TION (dB) -1-05 +25C E (dB) 68 ++-428055CCC A +85C R OL -15 -40C GU E IS E FI 4 S S VER -20 NOI RE -25 2 -30 0 0 1 2 3 4 5 0 1 2 3 4 5 FREQUENCY (GHz) FREQUENCY (GHz) InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 8 - 105 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC478ST89 / 478ST89E v05.0710 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz P1dB vs. Temperature Psat vs. Temperature 8 24 24 20 20 16 16 SMT P1dB (dBm) 182 ++2855CC Psat (dBm) 182 ++2855CC - -40C -40C K 4 4 C 0 0 O 0 1 2 3 4 5 0 1 2 3 4 5 L FREQUENCY (GHz) FREQUENCY (GHz) B N Gain, Power & Output IP3 vs. Supply I A Output IP3 vs. Temperature Voltage for Constant Icc= 62 mA @ 850 MHz G 35 m) 36 B & d 32 R 30 m), IP3 ( 28 VE Bm) 25 at (dB 2204 - DRI IP3 (d 1250 ++-428055CCC B), P1dB (dBm), Ps 114826 GPPIP1sa3adintB S d 10 n ( 0 R 0 1 2 3 4 5 Gai 5 6 7 8 E FREQUENCY (GHz) Vs (V) I F I L Vcc vs. Icc Over Temperature for Gain, Power & Output IP3 vs. Supply P Fixed Vs= 5V, RBIAS= 18 Ohms Voltage for Rs = 18 Ohms @ 850 MHz M A 80 Bm) 36 75 +85C 3 (d 32 70 m), IP 28 Icc (mA) 566505 +25C Bm), Psat (dB 122604 d 12 50 -40C B ( P1d 8 GP1adinB 45 B), 4 PIPs3at d 40 n ( 0 3.8 3.85 3.9 3.95 4 4.05 4.1 4.15 4.2 4.25 4.3 Gai 4.5 5 5.5 Vcc (V) Vs (V) InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 8 - 106 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC478ST89 / 478ST89E v05.0710 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Absolute Maximum Ratings 8 Collector Bias Voltage (Vcc) +6 Vdc RF Input Power (RFIN)(Vcc = +4.2 Vdc) +5 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) 0.615 W T (derate 9.5 mW/°C above 85 °C) M Thermal Resistance 105.6 °C/W S (junction to lead) Storage Temperature -65 to +150 °C - Operating Temperature -40 to +85 °C K C ESD Sensitivity (HBM) Class 1C O L B ELECTROSTATIC SENSITIVE DEVICE N OBSERVE HANDLING PRECAUTIONS I A G Outline Drawing & R E V I R D - S R E I F I NOTES: L 1. PACKAGE BODY MATERIAL: P MOLDING COMPOUND MP-180S OR EQUIVALENT. M 2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING. 3. LEAD PLATING: 100% MATTE TIN. A 4. DIMENSIONS ARE IN INCHES [MILLIMETERS] 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] HMC478ST89 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H478 XXXX HMC478ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H478 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 8 - 107 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC478ST89 / 478ST89E v05.0710 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Pin Descriptions 8 Pin Number Function Description Interface Schematic This pin is DC coupled. 1 RFIN An off chip DC blocking capacitor is required. T M S 3 RFOUT RF output and DC Bias (Vcc) for the output stage. - K C These pins and package bottom 2, 4 GND O must be connected to RF/DC ground. L B N I Application Circuit A G & R E V I R D - S R E I F I L P M Recommended Bias Resistor Values A for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) 5V 6V 8V Note: RBIAS VALUE 18 Ω 35 Ω 67 Ω 1. External blocking capacitors are required on RFIN and RFOUT. RBIAS POWER RATING 1/8 W 1/4 W 1/2 W 2. RBIAS provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 50 900 1900 2200 2400 3500 L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 8 - 108 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC478ST89 / 478ST89E v05.0710 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Evaluation PCB 8 T M S - K C O L B N I A G & R E V I R D - S R E I F I L List of Materials for Evaluation PCB 110161 [1] P M The circuit board used in the fi nal application Item Description A should use RF circuit design techniques. Signal J1 - J2 PC Mount SMA Connector lines should have 50 Ohm impedance while the J3 - J4 DC Pin package ground leads and package bottom should C1 - C3 100 pF Capacitor, 0402 Pkg. be connected directly to the ground plane similar to C4 1000 pF Capacitor, 0603 Pkg. that shown. A sufficient number of via holes should C5 2.2 μF Capacitor, Tantalum be used to connect the top and bottom ground R1 Resistor, 1210 Pkg. planes. The evaluation board should be mounted L1 18 nH Inductor, 0603 Pkg. to an appropriate heat sink. The evaluation circuit U1 HMC478ST89 / HMC478ST89E board shown is available from Hittite upon request. PCB [2] 108370 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 8 - 109 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D