Freescale Semiconductor DocumentNumber:MML20211H Technical Data Rev.1,9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier MML20211HT1 TheMML20211Hisasingle--stagelownoiseamplifier(LNA)withactivebias andhighisolationforuseincellularinfrastructureapplications.Itisdesignedfor arangeoflownoise,highlinearityapplicationssuchaspicocell,femtocell, towermountedamplifiers(TMA)andreceiverfrontendcircuits.Itoperatesfrom asinglevoltagesupplyandissuitableforapplicationswithfrequenciesfrom 1400to2800MHzsuchasTD--SCDMA,W--CDMA,UMTS,PCS,LTEandBWA. 1400--2800MHz,18.6dB 21.3dBm Features E--pHEMTLNA  UltraLowNoiseFigure:0.65dB@2140MHz  Frequency:1400--2800MHz  HighReverseIsolation:--35dB@2140MHz  P1dB:21.3dBm@2140MHz  Small--SignalGain:18.6dB@2140MHz(adjustableexternally)  ThirdOrderOutputInterceptPoint:33dBm@2140MHz  ActiveBiasControl(adjustableexternally)  Single5VSupply  SupplyCurrent:60mA  50OhmOperation(someexternalmatchingrequired) DFN22  Cost--effective8--pin,2mmDFNSurfaceMountPlasticPackage  InTapeandReel.T1Suffix=1,000Units,12mmTapeWidth,7--inchReel. Table1.TypicalPerformance(1) Table2.MaximumRatings 1400 1800 2140 2700 Rating Symbol Value Unit Characteristic Symbol MHz MHz MHz MHz Unit SupplyVoltage VDD 6 V NoiseFigure(2) NF 0.65 0.65 0.65 0.85 dB SupplyCurrent IDD 200 mA InputReturn IRL --19.5 --16 --16.7 --17.3 dB Loss(S11) RFInputPower Pin 22 dBm OutputReturn ORL --24.9 --28 --26.6 --20 dB StorageTemperatureRange Tstg --65to+150 C Loss(S22) JunctionTemperature TJ 175 C Small--Signal Gp 21.3 19.7 18.6 18.1 dB Gain(S21) PowerOutput P1dB 21.1 21.1 21.3 19.6 dBm @1dB Compression ThirdOrder IIP3 10.8 12.5 14.4 14.9 dBm InputIntercept Point ThirdOrder OIP3 32.1 32.2 33 33 dBm Output InterceptPoint 1. VDD=5Vdc,TA=25C,50ohmsystem,applicationcircuit tunedforspecifiedfrequency. 2. Noisefigurevaluecalculatedwithconnectorlossesremoved. Table3.ThermalCharacteristics Characteristic Symbol Value(3) Unit ThermalResistance,JunctiontoCase RJC 43.4 C/W CaseTemperature87C,5Vdc,IDD=60mA,noRFapplied 3. RefertoAN1955,ThermalMeasurementMethodologyofRFPowerAmplifiers.Gotohttp://www.freescale.com/rf. SelectDocumentation/ApplicationNotes--AN1955. FreescaleSemiconductor,Inc.,2011,2014.Allrightsreserved. MML20211HT1 RFDeviceData FreescaleSemiconductor 1

Table4.ElectricalCharacteristics(VDD=5Vdc,2140MHz,TA=25C,50ohmsystem,inFreescaleApplicationCircuit) Characteristic Symbol Min Typ Max Unit Small--SignalGain(S21) Gp 15 18.6 — dB InputReturnLoss(S11) IRL — --16.7 — dB OutputReturnLoss(S22) ORL — --26.6 — dB PowerOutput@1dBCompression P1dB — 21.3 — dBm ThirdOrderInputInterceptPoint IIP3 — 14.4 — dBm ThirdOrderOutputInterceptPoint OIP3 — 33 — dBm ReverseIsolation(S12) |S12| — --35 — dB NoiseFigure(1) NF — 0.65 — dB SupplyCurrent(2) IDD 45 60 85 mA SupplyVoltage VDD — 5 — V 1. Noisefigurevaluecalculatedwithconnectorlossesremoved. 2. DCcurrentmeasuredwithnoRFsignalapplied. Table5.FunctionalPinDescription Pin Number PinFunction 1 RFin RFin 1 8 N.C. 2 RFin RFin 2 7 RFout GND 3 RFInputMatchingTermination RFMATCH 3 6 RFout 4 BiasVoltageDCSupply VBIAS 4 5 FB 5 RFFeedback (TopView) 6 RFout/DCSupply 7 RFout/DCSupply Figure1.PinConnections 8 NoConnection Table6.ESDProtectionCharacteristics TestMethodology Class HumanBodyModel(perJESD22--A114) 0 MachineModel(perEIA/JESD22--A115) A ChargeDeviceModel(perJESD22--C101) IV Table7.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 1 260 C MML20211HT1 RFDeviceData 2 FreescaleSemiconductor

50OHMAPPLICATIONCIRCUIT:2140MHz VDD R3 C4 C8 C7 R2 RF Z6 INPUT C3 Z1 Z2 Z3 1 8 N.C. C1 L2 C9 2 7 RF OUTPUT Z4 Z5 L1 C2 3 6 C6 BIAS C5 R1 CIRCUIT 4 5 Z1 0.080x0.021Microstrip Z4 0.020x0.031Microstrip Z2 0.218x0.021Microstrip Z5 0.038x0.021Microstrip Z3 0.044x0.011Microstrip Z6 0.021x0.080Microstrip Figure2.MML20211HT1TestCircuitSchematic Table8.MML20211HT1TestCircuitComponentDesignationsandValues Part Description PartNumber Manufacturer C1,C5 18pFChipCapacitors GJM1555C1H180JB01D Murata C2,C3,C6,C7 18pFChipCapacitors GRM1555C1H180JA01D Murata C4,C8 0.1FChipCapacitors GRM155R61A104KA01D Murata C9 0.6pFChipCapacitor GJM1555C1HR60BB01D Murata L1,L2 3.6nHChipInductors 0402HP--3N6XGL Coilcraft R1 180,1/16WChipResistor RC0402FR--07180RL Yageo R2 0,1AChipResistor ERJ2GE0R00X Panasonic R3 1.5k,1/16WChipResistor RC0402FR--071K5L Yageo PCB 0.010,r=3.38,Multilayer IS680--3.38 Isola MML20211HT1 RFDeviceData FreescaleSemiconductor 3

50OHMAPPLICATIONCIRCUIT:2140MHz V D D 5 V C4 ViaA R3 RFIN RFOUT C9 C3 C1 L2 L1 C2 C6 C5 R2 R1 C7 C8 DFN2x2--8C ViaA Rev.0 NOTE:Toachieveoptimalnoiseperformance,itiscriticalthatproperbiasing,inputmatching,supply decouplingandgroundingareemployed. Figure3.MML20211HT1TestCircuitComponentLayout Table8.MML20211HT1TestCircuitComponentDesignationsandValues Part Description PartNumber Manufacturer C1,C5 18pFChipCapacitors GJM1555C1H180JB01D Murata C2,C3,C6,C7 18pFChipCapacitors GRM1555C1H180JA01D Murata C4,C8 0.1FChipCapacitors GRM155R61A104KA01D Murata C9 0.6pFChipCapacitor GJM1555C1HR60BB01D Murata L1,L2 3.6nHChipInductors 0402HP--3N6XGL Coilcraft R1 180,1/16WChipResistor RC0402FR--07180RL Yageo R2 0,1AChipResistor ERJ2GE0R00X Panasonic R3 1.5k,1/16WChipResistor RC0402FR--071K5L Yageo PCB 0.010,r=3.38,Multilayer IS680--3.38 Isola (TestCircuitComponentDesignationsandValuesrepeatedforreference.) MML20211HT1 RFDeviceData 4 FreescaleSemiconductor

50OHMTYPICALCHARACTERISTICS:2140MHz --3 -3-256 --6 -3-208 --9 -2-350 B) --12 B) -2-302 (d 85C (d 25C 1 2 1 --15 1 -1-354 S S --18 -1-306 --40C 25C --40C 85C --21 --358 VDD=5Vdc VDD=5Vdc --24 --400 2000 2060 2120 2180 2240 2300 2000 2060 2120 2180 2240 2300 f,FREQUENCY(MHz) f,FREQUENCY(MHz) Figure4.S11versusFrequencyversus Figure5.S12versusFrequencyversus Temperature Temperature 22 --19 21 --22 85C 20 --25 --40C 25C 25C B) 19 B) --28 d d ( ( 1 2 2 18 2 --31 S S 85C --40C 17 --34 16 --37 VDD=5Vdc VDD=5Vdc 15 --40 2000 2060 2120 2180 2240 2300 2000 2060 2120 2180 2240 2300 f,FREQUENCY(MHz) f,FREQUENCY(MHz) Figure6.S21versusFrequencyversus Figure7.S22versusFrequencyversus Temperature Temperature MML20211HT1 RFDeviceData FreescaleSemiconductor 5

50OHMTYPICALCHARACTERISTICS:2140MHz 1.4 22 21 1.2 20 B) 1 B) 19 (d 85C (d --40C E N 18 GUR 0.8 25C GAI 17 OISEFI 0.6 --40C POWER 16 25C 85C NF,N 0.4 G,ps 15 14 0.2 13 VDD=5Vdc VDD=5Vdc f=2140MHz 0 12 2040 2080 2120 2160 2200 2240 6 8 10 12 14 16 18 20 22 f,FREQUENCY(MHz) Pout,OUTPUTPOWER(dBm) Figure8.NoiseFigureversusFrequency Figure9.PowerGainversusOutputPower versusTemperature versusTemperature,CW m) m) B 38 B 36 d d ( ( OINT 36 OINT 35 P 34 P T T EP 32 EP 34 25C C C TER 30 TER 33 --40C N N I I T 28 T PU PU 32 85C T 26 T U U O O R 24 R 31 E E ORD 22 Vf=DD21=450VMdHcz ORD 30 VDD=5Vdc RD 20 1MHzToneSpacing RD 1MHzToneSpacing HI HI T 18 T 29 P3, 20 30 40 50 60 70 80 90 100 P3, 2040 2080 2120 2160 2200 2240 OI OI IDD,CURRENT(mA) f,FREQUENCY(MHz) Figure10.ThirdOrderOutputInterceptPoint Figure11.ThirdOrderOutputInterceptPoint (Two--Tone)versusIDDCurrent (Two--Tone)versusFrequencyversusTemperature 24 m) B d ( 23 W C T, --40C N 22 OI P ON 21 SI 85C S 25C RE 20 P M O C 19 B d B,1 18 P1d VDD=5Vdc 17 2040 2080 2120 2160 2200 2240 f,FREQUENCY(MHz) Figure12.P1dBversusFrequencyversus Temperature,CW MML20211HT1 RFDeviceData 6 FreescaleSemiconductor

50OHMAPPLICATIONCIRCUIT:1800MHz VDD R3 C4 C8 C7 R2 RF Z6 INPUT C3 Z1 Z2 Z3 1 8 N.C. C1 L2 C9 2 7 RF OUTPUT Z4 Z5 L1 C2 3 6 C6 BIAS C5 R1 CIRCUIT 4 5 Z1 0.080x0.021Microstrip Z4 0.020x0.031Microstrip Z2 0.218x0.021Microstrip Z5 0.038x0.021Microstrip Z3 0.044x0.011Microstrip Z6 0.021x0.080Microstrip Figure13.MML20211HT1TestCircuitSchematic Table9.MML20211HT1TestCircuitComponentDesignationsandValues Part Description PartNumber Manufacturer C1,C5 18pFChipCapacitors GJM1555C1H180JB01D Murata C2,C3,C6,C7 18pFChipCapacitors GRM1555C1H180JA01D Murata C4,C8 0.1FChipCapacitors GRM155R61A104KA01D Murata C9 0.7pFChipCapacitor GJM1555C1HR70BB01D Murata L1 3.6nHChipInductor 0402HP--3N6XGL Coilcraft L2 4.7nHChipInductor 0402CS--4N7 Coilcraft R1 180,1/16WChipResistor RC0402FR--07180RL Yageo R2 0,1AChipResistor ERJ2GE0R00X Panasonic R3 1.5k,1/16WChipResistor RC0402FR--071K5L Yageo PCB 0.010,r=3.38,Multilayer IS680--3.38 Isola MML20211HT1 RFDeviceData FreescaleSemiconductor 7

50OHMAPPLICATIONCIRCUIT:1800MHz V D D 5 V C4 ViaA R3 RFIN RFOUT C9 C3 C1 L2 L1 C2 C6 C5 R2 R1 C7 C8 ViaA DFN2x2--8C Rev.0 NOTE:Toachieveoptimalnoiseperformance,itiscriticalthatproperbiasing,inputmatching,supply decouplingandgroundingareemployed. Figure14.MML20211HT1TestCircuitComponentLayout Table9.MML20211HT1TestCircuitComponentDesignationsandValues Part Description PartNumber Manufacturer C1,C5 18pFChipCapacitors GJM1555C1H180JB01D Murata C2,C3,C6,C7 18pFChipCapacitors GRM1555C1H180JA01D Murata C4,C8 0.1FChipCapacitors GRM155R61A104KA01D Murata C9 0.7pFChipCapacitor GJM1555C1HR70BB01D Murata L1 3.6nHChipInductor 0402HP--3N6XGL Coilcraft L2 4.7nHChipInductor 0402CS--4N7 Coilcraft R1 180,1/16WChipResistor RC0402FR--07180RL Yageo R2 0,1AChipResistor ERJ2GE0R00X Panasonic R3 1.5k,1/16WChipResistor RC0402FR--071K5L Yageo PCB 0.010,r=3.38,Multilayer IS680--3.38 Isola (TestCircuitComponentDesignationsandValuesrepeatedforreference.) MML20211HT1 RFDeviceData 8 FreescaleSemiconductor

50OHMTYPICALCHARACTERISTICS:1800MHz --3 --3256 --6 --3208 --9 --2350 B) --12 B) --2302 d d ( ( 1 2 1 --15 1 --1354 S S --18 --1306 --21 --358 VDD=5Vdc VDD=5Vdc --24 --400 1650 1710 1770 1830 1890 1950 1650 1710 1770 1830 1890 1950 f,FREQUENCY(MHz) f,FREQUENCY(MHz) Figure15.S11versusFrequency Figure16.S12versusFrequency 22 --16 21 --19 20 --22 B) 19 B) --25 d d ( ( 1 2 2 18 2 --28 S S 17 --31 16 --34 VDD=5Vdc VDD=5Vdc 15 --37 1650 1710 1770 1830 1890 1950 1650 1710 1770 1830 1890 1950 f,FREQUENCY(MHz) f,FREQUENCY(MHz) Figure17.S21versusFrequency Figure18.S22versusFrequency MML20211HT1 RFDeviceData FreescaleSemiconductor 9

50OHMTYPICALCHARACTERISTICS:1800MHz m) 1.4 B 36 d ( T 1.2 OIN 35 P T B) 1 EP 34 d C ( R RE 0.8 TE 33 U N G I FI UT E 0.6 P 32 S T OI U N O NF, 0.4 DER 31 R 0.2 O 30 VDD=5Vdc VDD=5Vdc HIRD 1MHzToneSpacing 0 T 29 1700 1740 1780 1820 1860 1900 P3, 1700 1740 1780 1820 1860 1900 OI f,FREQUENCY(MHz) f,FREQUENCY(MHz) Figure19.NoiseFigureversusFrequency Figure20.ThirdOrderOutputInterceptPoint (Two--Tone)versusFrequency MML20211HT1 RFDeviceData 10 FreescaleSemiconductor

50OHMAPPLICATIONCIRCUIT:2700MHz VDD R3 C4 C8 C7 R2 RF Z5 INPUT Z1 Z2 C3 1 8 N.C. C1 L2 C9 2 7 RF OUTPUT Z3 Z4 L1 C2 3 6 BIAS C5 CIRCUIT 4 5 N.C. Z1 0.150x0.021Microstrip Z4 0.038x0.021Microstrip Z2 0.044x0.011Microstrip Z5 0.021x0.080Microstrip Z3 0.020x0.031Microstrip Figure21.MML20211HT1TestCircuitSchematic Table10.MML20211HT1TestCircuitComponentDesignationsandValues Part Description PartNumber Manufacturer C1,C5 8.2pFChipCapacitors GJM1555C1H8R2CB01 Murata C2,C3,C7 8.2pFChipCapacitors GRM1555C1H8R2DA01 Murata C4,C8 0.1FChipCapacitors GRM155R61A104KA01D Murata C6 ComponentNotPlaced C9 0.8pFChipCapacitor GJM1555C1HR80BB01D Murata L1,L2 2.2nHChipInductors 0402CS--2N2 Coilcraft R1 ComponentNotPlaced R2 0,1AChipResistor ERJ2GE0R00X Panasonic R3 1.5k,1/16WChipResistor RC0402FR--071K5L Yageo PCB 0.010,r=3.38,Multilayer IS680--3.38 Isola Note:ComponentnumbersC6andR1arelabeledonboardbutnotplaced. MML20211HT1 RFDeviceData FreescaleSemiconductor 11

50OHMAPPLICATIONCIRCUIT:2700MHz V D D 5 V C4 ViaA R3 RFIN RFOUT C9 C3 C1 L2 L1 C2 C6* C5 R2 R1* C7 C8 DFN2x2--8C ViaA Rev.0 Note:ComponentnumbersC6*andR1*arelabeledonboardbutnotplaced. NOTE:Toachieveoptimalnoiseperformance,itiscriticalthatproperbiasing,inputmatching,supply decouplingandgroundingareemployed. Figure22.MML20211HT1TestCircuitComponentLayout Table10.MML20211HT1TestCircuitComponentDesignationsandValues Part Description PartNumber Manufacturer C1,C5 8.2pFChipCapacitors GJM1555C1H8R2CB01 Murata C2,C3,C7 8.2pFChipCapacitors GRM1555C1H8R2DA01 Murata C4,C8 0.1FChipCapacitors GRM155R61A104KA01D Murata C6 ComponentNotPlaced C9 0.8pFChipCapacitor GJM1555C1HR80BB01D Murata L1,L2 2.2nHChipInductors 0402CS--2N2 Coilcraft R1 ComponentNotPlaced R2 0,1AChipResistor ERJ2GE0R00X Panasonic R3 1.5k,1/16WChipResistor RC0402FR--071K5L Yageo PCB 0.010,r=3.38,Multilayer IS680--3.38 Isola (TestCircuitComponentDesignationsandValuesrepeatedforreference.) MML20211HT1 RFDeviceData 12 FreescaleSemiconductor

50OHMTYPICALCHARACTERISTICS:2700MHz --3 --2365 --6 --2380 --9 --3205 B) --12 B) --3220 d d ( ( 1 2 1 --15 1 --3145 S S --18 --3160 --21 --385 VDD=5Vdc VDD=5Vdc --24 --400 2550 2610 2670 2730 2790 2850 2550 2610 2670 2730 2790 2850 f,FREQUENCY(MHz) f,FREQUENCY(MHz) Figure23.S11versusFrequency Figure24.S12versusFrequency 21 13 20 --16 19 --19 B) 18 B) --22 d d ( ( 1 2 2 17 2 --25 S S 16 --28 15 --31 VDD=5Vdc VDD=5Vdc 14 --34 2550 2610 2670 2730 2790 2850 2550 2610 2670 2730 2790 2850 f,FREQUENCY(MHz) f,FREQUENCY(MHz) Figure25.S21versusFrequency Figure26.S22versusFrequency MML20211HT1 RFDeviceData FreescaleSemiconductor 13

50OHMTYPICALCHARACTERISTICS:2700MHz m) 1.4 B 36 d ( T 1.2 OIN 35 P T B) 1 EP 34 d C ( R RE 0.8 TE 33 U N G I FI UT E 0.6 P 32 S T OI U N O NF, 0.4 DER 31 0.2 OR 30 VDD=5Vdc D 1MHzToneSpacing VDD=5Vdc HIR 0 T 29 2600 2640 2680 2720 2760 2800 P3, 2600 2640 2680 2720 2760 2800 OI f,FREQUENCY(MHz) f,FREQUENCY(MHz) Figure27.NoiseFigureversusFrequency Figure28.ThirdOrderOutputInterceptPoint (Two--Tone)versusFrequency MML20211HT1 RFDeviceData 14 FreescaleSemiconductor

2.00 0.80 0.30 0.50 1.60.8solderpadwith thermalviastructure.All 1.20 0.60 dimensionsinmm. 2.40 Figure29.PCBPadLayoutforDFN22 MB YW Figure30.ProductMarking MML20211HT1 RFDeviceData FreescaleSemiconductor 15

PACKAGEDIMENSIONS MML20211HT1 RFDeviceData 16 FreescaleSemiconductor

MML20211HT1 RFDeviceData FreescaleSemiconductor 17

MML20211HT1 RFDeviceData 18 FreescaleSemiconductor

PRODUCTDOCUMENTATION,TOOLSANDSOFTWARE Refertothefollowingresourcestoaidyourdesignprocess. ApplicationNotes  AN1955:ThermalMeasurementMethodologyofRFPowerAmplifiers Software  .s2pFile DevelopmentTools  PrintedCircuitBoards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to Software&Toolsonthepart’sProductSummarypagetodownloadtherespectivetool. FAILUREANALYSIS Atthistime,becauseofthephysicalcharacteristicsofthepart,failureanalysisislimitedtoelectricalsignatureanalysis.In caseswhereFreescaleiscontractuallyobligatedtoperformfailureanalysis(FA)services,fullFAmaybeperformedbythird partyvendorswithmoderatesuccess.ForupdatescontactyourlocalFreescaleSalesOffice. REVISIONHISTORY Thefollowingtablesummarizesrevisionstothisdocument. Revision Date Description 0 Aug.2011  InitialReleaseofDataSheet 1 Sept.2014  Table2,MaximumRatings:updatedJunctionTemperaturefrom150Cto175Ctoreflectrecenttest resultsofthedevice,p.1  Table6,ESDProtectionCharacteristics:removedtheword“Minimum”aftertheESDclassrating.ESD ratingsarecharacterizedduringnewproductdevelopmentbutarenot100%testedduringproduction.ESD ratingsprovidedinthedatasheetareintendedtobeusedasaguidelinewhenhandlingESDsensitive devices,p.2  RevisedFailureAnalysisinformation,p.19 MML20211HT1 RFDeviceData FreescaleSemiconductor 19

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