HMC478MP86 478MP86E / v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Typical Applications Features 8 The HMC478MP86 / HMC478MP86E is an ideal RF/ P1dB Output Power: +18 dBm IF gain block & LO or PA driver: Gain: 22 dB • Cellular / PCS / 3G Output IP3: +32 dBm T • Fixed Wireless & WLAN Cascadable 50 Ohm I/Os M • CATV, Cable Modem & DBS Single Supply: +5V to +8V S • Microwave Radio & Test Equipment Robust 1,000V ESD, Class 1C - K Included in the HMC-DK001 Designer’s Kit C Functional Diagram General Description O L The HMC478MP86 & HMC478MP86E are SiGe B Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi ers covering DC to 4 GHz. This N Micro-P packaged amplifi er can be used as a cas- I A cadable 50 Ohm RF/IF gain stage as well as a G LO or PA driver with up to +20 dBm output power. & The HMC478MP86(E) offers 22 dB of gain with a +32 dBm output IP3 at 850 MHz while requiring only R 62 mA from a single positive supply. The Darlington E V feedback pair used results in reduced sensitivity to I normal process variations and excellent gain stability R over temperature while requiring a minimal number of D external bias components. - S Electrical Specifi cations, Vs= 5V, Rbias= 18 Ohm, T = +25° C R A E Parameter Min. Typ. Max. Units I DC - 1.0 GHz 19 22 dB F 1.0 - 2.0 GHz 15 18 dB I Gain L 2.0 - 3.0 GHz 13 16 dB P 3.0 - 4.0 GHz 11 14 dB M Gain Variation Over Temperature DC - 4 GHz 0.015 0.02 dB/ °C A DC - 1.0 GHz 15 dB Input Return Loss 1.0 - 3.0 GHz 12 dB 3.0 - 4.0 GHz 13 dB DC - 1.0 GHz 20 dB Output Return Loss 1.0 - 4.0 GHz 17 dB Reverse Isolation DC - 4 GHz 20 dB 0.5 - 1.0 GHz 15 18 dBm 1.0 - 2.0 GHz 13 16 dBm Output Power for 1 dB Compression (P1dB) 2.0 - 3.0 GHz 11 14 dBm 3.0 - 4.0 GHz 9 12 dBm 0.5 - 2.0 GHz 32 dBm Output Third Order Intercept (IP3) 2.0 - 3.0 GHz 29 dBm (Pout= 0 dBm per tone, 1 MHz spacing) 3.0 - 4.0 GHz 25 dBm DC - 3.0 GHz 2.5 dB Noise Figure 3.0 - 4.0 GHz 3.5 dB Supply Current (Icq) 62 mA Note: Data taken with broadband bias tee on device output. InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 8 - 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC478MP86 / 478MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Broadband Gain & Return Loss Gain vs. Temperature 8 30 30 20 25 B) 10 20 NSE (d 0 SS2111 N (dB) 15 MT SPO S22 GAI S RE -10 10 - -20 5 ++2855 CC K -40 C C -30 0 O 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 FREQUENCY (GHz) FREQUENCY (GHz) L B N I Input Return Loss vs. Temperature Output Return Loss vs. Temperature A G 0 0 & -5 -5 B) B) R d -10 d -10 S ( S ( E S S O O V L -15 L -15 N N I R R R U U T -20 T -20 E +25 C E D R R +85 C -25 -40 C -25 ++2855 CC - -40 C S -30 -30 R 0 1 2 3 4 5 0 1 2 3 4 5 FREQUENCY (GHz) FREQUENCY (GHz) E I F I L P Reverse Isolation vs. Temperature Noise Figure vs. Temperature M 0 10 A 9 TION (dB) -1-05 ++-428055 CCC E (dB) 678 ++-428055 CCC A R L U O -15 G 5 E IS E FI 4 VERS -20 NOIS 3 RE -25 2 1 -30 0 0 1 2 3 4 5 0 1 2 3 4 5 FREQUENCY (GHz) FREQUENCY (GHz) InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 8 - 2 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC478MP86 / 478MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz P1dB vs. Temperature Psat vs. Temperature 8 24 24 22 22 20 20 18 18 16 16 SMT P1dB (dBm) 111024 Psat (dBm) 111024 - 68 ++2855 CC 68 ++2855CC K 4 -40 C 4 -40C C 2 2 0 0 O 0 1 2 3 4 5 0 1 2 3 4 5 L FREQUENCY (GHz) FREQUENCY (GHz) B N Gain, Power & OIP3 vs. Supply Voltage I A Output IP3 vs. Temperature for Constant Icc= 62 mA @ 850 MHz G 35 m) 36 & 30 P3 (dB 32 R OI 28 E m) 25 Bm), 24 RIV OIP3 (dB 20 m), Psat (d 1260 S - D 15 ++-428055 CCC B), P1dB (dB 1482 GPPO1saIdPainBt3 R 100 1 2 3 4 5 ain (d 05 6 7 8 G E FREQUENCY (GHz) Vs (Vdc) I F I L Vcc vs. Icc Over Temperature for Gain, Power & OIP3 vs. Supply Voltage P Fixed Vs= 5V, RBIAS= 18 Ohms for Rs = 18 Ohms @ 850 MHz M 80 m) 36 A dB 75 +85 C 3 ( 32 P 6750 +25 C dBm), OI 2248 Icc (mA) 5650 m), Psat ( 1260 -40 C dB 12 50 dB ( 8 PG1adinB P1 Psat 45 B), 4 OIP3 d 40 n ( 0 3.7 3.8 3.9 4 4.1 4.2 4.3 Gai 4.5 5 5.5 Vcc (Vdc) Vs (Vdc) InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 8 - 3 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC478MP86 / 478MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Absolute Maximum Ratings 8 Collector Bias Voltage (Vcc) +6.0 Vdc ELECTROSTATIC SENSITIVE DEVICE Collector Bias Current (Icc) 100 mA OBSERVE HANDLING PRECAUTIONS RF Input Power (RFIN)(Vcc = +4.3 Vdc) +5 dBm Junction Temperature 150 °C T Continuous Pdiss (T = 85 °C) M 0.583 W (derate 9 mW/°C above 85 °C) S Thermal Resistance 111.5 °C/W (junction to lead) - Storage Temperature -65 to +150 °C K C Operating Temperature -40 to +85 °C O ESD Sensitivity (HBM) Class 1C L B Outline Drawing N I A G & R E V I R D - S R E NOTES: I 1. LEADFRAME MATERIAL: COPPER ALLOY F 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] I L 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. P 4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. M 5. THE MICRO-P PACKAGE IS DIMENSIONALLY COMPATIBLE WITH THE “MICRO-X PACKAGE” A Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking HMC478MP86 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 478 HMC478MP86E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 478 [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 8 - 4 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC478MP86 / 478MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Pin Descriptions 8 Pin Number Function Description Interface Schematic This pin is DC coupled. 1 RFIN An off chip DC blocking capacitor is required. T M S 3 RFOUT RF output and DC Bias (Vcc) for the output stage. - K C 2, 4 GND These pins must be connected to RF/DC ground. O L B N Application Circuit I A G & R E V I R D - S R E I F I L P M A Recommended Bias Resistor Values for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc Supply Voltage (Vs) 5V 6V 8V Note: 1. External blocking capacitors are required on RBIAS VALUE 18 Ω 35 Ω 67 Ω RFIN and RFOUT. RBIAS POWER RATING 1/8 W 1/4 W 1/2 W 2. RBIAS provides DC bias stability over temperature. Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 50 900 1900 2200 2400 3500 L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 8 - 5 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaaPyt iorhenso uonlrt ofertoh:m e9r wit7sis 8ues -eu2.n dS5epr0e ca-inf3iyc 3aptia4otne3sn ts ou rb jpeFacttae tnoxt c:r hig9ahn7tgs 8eo wf- 2Aithn5oau0lot g-n 3oDti3ecve7i.c 3eNso . POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D

HMC478MP86 / 478MP86E v03.0810 SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Evaluation PCB 8 T M S - K C O L B N I A G & R E V I R D - S R E I F I L List of Materials for Evaluation PCB 110170 [1] P M The circuit board used in the application should use Item Description A RF circuit design techniques. Signal lines should J1 - J2 PCB Mount SMA Connector have 50 Ohm impedance while the package ground J3 - J4 DC Pin leads should be connected directly to the ground C1, C2 Capacitor, 0402 Pkg. plane similar to that shown. A sufficient number C3 100 pF Capacitor, 0402 Pkg. of via holes should be used to connect the top C4 1000 pF Capacitor, 0603 Pkg. and bottom ground planes. The evaluation board C5 2.2 μF Capacitor, Tantalum should be mounted to an appropriate heat sink. R1 Resistor, 1210 Pkg. The evaluation circuit board shown is available from L1 Inductor, 0603 Pkg. Hittite upon request. U1 HMC478MP86 / HMC478MP86E PCB [2] 107087 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 InforFmaotiro np fruircniseh,e dd beyl iAvnealroyg Daenvidce st ois pbelaliecveed otor dbee arcsc:u rHateit taintde reMliaibcler. oHwowaevveer, Cnoo rpFoorr aptriiocen,, d2e0liv Aerlyp, haand R too apdla,c Ce horedlemrss: fAonrdal,o gM DAe v0ic1e8s2, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that maPy rhesounlt fero:m 9 it7s 8us-e2. S5p0ec-if3ic3ati4on3s s u b jeFcta tox c: h9an7g8e w-2ith5ou0t -n3oti3ce7. 3No POhrodnee:r 7 O81n-3-2li9n-e4 7a0t0 w(cid:127) Owrwde.hr oitntliitnee. cato wmww.analog.com 8 - 6 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks arAe tphep plriocpearttyi oof nth eSir urespppecotivret :o wPnehrso.ne: 978-250-3A3p4p3li c aotrio na Spuppsp@orht: iPtthitoen.ec: o1-m800-ANALOG-D