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  • 型号: HMC308E
  • 制造商: Hittite
  • 库位|库存: xxxx|xxxx
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HMC308E产品简介:

ICGOO电子元器件商城为您提供HMC308E由Hittite设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 HMC308E价格参考。HittiteHMC308E封装/规格:RF 放大器, 射频放大器 IC 通用 800MHz ~ 3.8GHz SOT-26。您可以下载HMC308E参考资料、Datasheet数据手册功能说明书,资料中有HMC308E 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

射频/IF 和 RFID

描述

IC MMIC AMP GP SOT26

产品分类

RF 放大器

品牌

Hittite Microwave Corporation

数据手册

点击此处下载产品Datasheet

产品图片

P1dB

12dBm

产品型号

HMC308E

RF类型

通用

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

供应商器件封装

SOT-26

其它名称

1127-1016-2
HMC308ETR

包装

带卷 (TR)

噪声系数

7dB

增益

13dB

封装/外壳

SOT-23-6

标准包装

500

测试频率

-

电压-电源

5V

电流-电源

53mA

频率

800MHz ~ 3.8GHz

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PDF Datasheet 数据手册内容提取

HMC308 308E / v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Typical Applications Features 9 Broadband or Narrow Band Applications: Gain: 18 dB • Cellular/PCS/3G P1dB Output Power: +17 dBm@ +5V • Fixed Wireless & Telematics Single Supply: +3V or +5V T E • Cable Modem Termination Systems No External Components M S • WLAN, Bluetooth & RFID Integrated DC Blocks - Ultra Small Package: SOTT26 S R E Functional Diagram General DeEscription I F I The HMC308 & HMC308E are low cost MESFET L P MMIC amplifi ers that operate from a single +3 to L M +5V supply from 0.8 to 3.8 GHz. The surface mount A SOT26 amplifi er can be used as a broadband ampli- fi er stage or used with external matching for opti- K O mized narrow band applications. With Vdd biased at C +5V, the HMC308 & HMC308E offers 18 dB of gain O and +20 dBm of saturated output power while requir- L B ing only 53 mA of current. This amplifi er is ideal as S a driver amplifi er for transmitters or for use as a N local oscillator (LO) amplifi er to increase drive levels I A for passive mixers. The amplifi er occupies 0.014 in2 G B (9 mm2), making it ideal for compact radio designs. & R E O V RI Electrical Specifi cations, T = +25° C, as a function of Vdd A D Vdd = +3V Vdd = +5V Vdd = +5V Vdd = +5V Parameter Units Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Frequency Range 2.3 - 2.7 0.8 - 2.3 2.3 - 2.7 2.7 - 3.8 GHz Gain 13 15.5 14 18 13 16 10 13 dB Gain Variation over Temperature 0.025 0.035 0.025 0.035 0.025 0.035 0.025 0.035 dB/°C Input Return Loss 11 8 11 13 dB Output Return Loss 17 13 12 13 dB Output Power for 1 dB 12 14 14 17 13.5 16.5 12 15 dBm Compression (P1dB) Saturated Output Power (Psat) 17 20 19.5 17 dBm Output Third Order Intercept (IP3) 23 26 27 30 26 29 24 27 dBm Noise Figure 7 7.5 7 7 dB Supply Current (Idd) 50 53 53 53 mA Information furnisheFd obry Apnrailcoge D, edviceelsi vise breylie,v eadn tdo bteo a cpcluaractee a nod rrdelieabrlse., Hpowleevaers, eno coFnotra pcritc eH, idtteiltieve rMy, iacnrdo wtoa pvlaec eC oorrdperosr: aAtnioalnog: Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 2 rights of third parties th2at 0m aAy rlepsuhlt afro mR iots ausde., S Cpehcifeicalmtionss fsoubrjdec,t tMo cAhan 0ge1 w8it2ho4ut n oPticheo. Nnoe : P9h7o8ne-:2 75801--33239-44370 0F (cid:127)a Oxr:d 9er7 o8n-li2ne5 a0t- w3w3w7.3analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their resOpercdtivee orw Onerns.-line at www.hAiptptilticea.tcioonm Support: Phone: 1-800-ANALOG-D

HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Broadband Gain & Return Loss @ Vdd = +5V P1dB vs. Vdd Bias 9 30 24 20 20 B) 10 16 RESPONSE (d -100 SSS122112 P1dB (dBm) 182 VVdddd==++53VVE SMT T - -20 4 S R -30 0 E 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.5 1 E1.5 2 2.5 3 3.5 4 I FREQUENCY (GHz) FREQUENCY (GHz) F I L P L M Gain vs. Temperature @ Vdd = +5V Gain vs. Temperature @ Vdd = +3V A 24 24 K O 20 20 C O 16 16 B) B) L d d GAIN ( 12 +25 C S GAIN ( 12 +25 C N B 8 +85 C 8 +85 C -40 C -40 C I A 4 4 B G 0 0 & 0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) R O E V Input & Output I Return Loss vs. Vdd Bias Reverse Isolation vs. Vdd Bias R D 0 0 -5 B) -10 d S (dB) -10 TION ( -20 VVdddd==++53VV S -15 A O L L O -30 RN -20 E IS U S T R -40 RE -25 S11 Vdd=+5V EVE -30 SS2121 VVdddd==++53VV R -50 S22 Vdd=+3V -35 -60 0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) Information furnisheFd obry Apnrailcoge D, edviceelsi vise breylie,v eadn tdo bteo a cpcluaractee a nod rrdelieabrlse., Hpowleevaers, eno coFnotra pcritc eH, idtteiltieve rMy, iacnrdo wtoa pvlaec eC oorrdperosr: aAtnioalnog: Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties tha2t 0ma yA relpsuhlt faro mR itos uasde. ,S pCechifiecaltmionss fsoubrjedct, toM chAan g0e1 w8ith2ou4t nPotihceo. Nnoe : P9h7o8n-e2: 75801--332394-437 0 0F (cid:127)a Ox:r d9e7r o8n-l2in5e 0at- w33w7w3.analog.com 9 - 3 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their resOpercdtivee orw Onerns.-line at www.hAiptptilticea.tcioonm Support: Phone: 1-800-ANALOG-D

HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Power Compression Power Compression @ 2.0 GHz, Vdd = +5V @ 2.5 GHz, Vdd = +5V 9 28 28 %) 24 GPoauint %) 24 Pout AE ( 20 PAE AE ( 20 GPAaiEn P P T B), 16 B), 16 E d d M AIN ( 12 AIN ( 12 S m), G 8 m), G 8 B B S - out (d 4 out (d 4 T P 0 P 0 R -4 -4 E -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 -20 -18 -16 E-14 -12 -10 -8 -6 -4 -2 0 2 4 6 I F INPUT POWER (dBm) INPUT POWER (dBm) I L P OutLput P1dB vs. M Psat vs. Temperature @ Vdd = +5V Temperature @ Vdd = +5V A 24 24 K O C 20 20 O L m) 16 m) 16 N B Psat (dB 12 ++2855 CC S P1dB (dB 12 ++2855 CC -40 C -40 C I A 8 8 G B 4 4 & 0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4 R FREQUENCY (GHz) FREQUENCY (GHz) E O V Output IP3 I R vs. Temperature @ Vdd = +5V Typical Supply Current vs. Vdd D 38 Vdd (Vdc) Idd (mA) 34 +2.5 49 30 +3.0 50 26 +3.5 51 m) B d 22 +4.5 50 P3 ( ++2855 CC I 18 -40 C +5.0 53 14 +5.5 54 10 6 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) Information furnisheFd obry Apnrailcoge D, edviceelsi vise breylie,v eadn tdo bteo a cpcluaractee a nod rrdelieabrlse., Hpowleevaers, eno coFnotra pcritc eH, idtteiltieve rMy, iacnrdo wtoa pvlaec eC oorrdperosr: aAtnioalnog: Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 4 rights of third parties th2at 0m aAy rlepsuhlt afro mR iots ausde., S Cpehcifeicalmtionss fsoubrjdec,t tMo cAhan 0ge1 w8it2ho4ut n oPticheo. Nnoe : P9h7o8ne-:2 75801--33239-44370 0F (cid:127)a Oxr:d 9er7 o8n-li2ne5 a0t- w3w3w7.3analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their resOpercdtivee orw Onerns.-line at www.hAiptptilticea.tcioonm Support: Phone: 1-800-ANALOG-D

HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Power Compression Power Compression @ 2.0 GHz, Vdd = +3V @ 2.5 GHz, Vdd = +3V 9 30 28 28 AE (%) 222246 GPPoAauiEnt AE (%) 2204 GPPoAauiEnt P 20 P B), 18 B), 16 E T d 16 d AIN ( 1124 AIN ( 12 M m), G 180 m), G 8 S Pout (dB 0246 Pout (dB 04 T S - R -2 -4 -4 E -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 -20 -18 -16 E-14 -12 -10 -8 -6 -4 -2 0 2 4 6 I INPUT POWER (dBm) INPUT POWER (dBm) F I L Output P1dB vs. P L M Psat vs. Temperature @ Vdd = +3V Temperature @ Vdd = +3V A 24 24 K O 20 20 C O Psat (dBm) 1126 ++2855 CC S P1dB (dBm) 1126 N BL -40 C I 8 8 ++2855 CC A B -40 C G 4 4 & 0.5 1 1.5 2 2.5 3 3.5 4 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) R O E V Output IP3 I vs. Temperature @ Vdd = +3V Absolute Maximum Ratings R D 38 Drain Bias Voltage (Vdd) +7.0 Vdc 34 RF Input Power (RFIN)(Vdd = +5Vdc) +10 dBm 30 Channel Temperature 150 °C m) 26 C(doenratitneu 6o.u2s5 P mdWiss/° C(T a=b 8ov5e ° C85) °C) 0.406 W B d 22 IP3 ( 18 +25 C T(chhearnmnaell Rtoe lseisatda)nce 160 °C/W +85 C 14 -40 C Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C 10 ESD Sensitivity (HBM) Class 1A 6 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Information furnisheFd obry Apnrailcoge D, edviceelsi vise breylie,v eadn tdo bteo a cpcluaractee a nod rrdelieabrlse., Hpowleevaers, eno coFnotra pcritc eH, idtteiltieve rMy, iacnrdo wtoa pvlaec eC oorrdperosr: aAtnioalnog: Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties tha2t 0ma yA relpsuhlt faro mR itos uasde. ,S pCechifiecaltmionss fsoubrjedct, toM chAan g0e1 w8ith2ou4t nPotihceo. Nnoe : P9h7o8n-e2: 75801--332394-437 0 0F (cid:127)a Ox:r d9e7r o8n-l2in5e 0at- w33w7w3.analog.com 9 - 5 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their resOpercdtivee orw Onerns.-line at www.hAiptptilticea.tcioonm Support: Phone: 1-800-ANALOG-D

HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Outline Drawing 9 T E M S - T S R E E I F I L P NOTES: 1. LEALDFRAME MATERIAL: COPPER ALLOY M 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] A 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. K O 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND C O L B S N I A Package Information G Part Number PacBkage Body Material Lead Finish MSL Rating Package Marking [3] & HMC308 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H308 XXXX R HMC308E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 308E E O XXXX V [1] Max peak refl ow temperature of 235 °C I [2] Max peak refl ow temperature of 260 °C R [3] 4-Digit lot number XXXX D Pin Descriptions Pin Number Function Description Interface Schematic 1 RFOUT This pin is AC coupled and matched to 50 Ohms. 2, 5, 6 GND These pins must be connected to RF/DC ground. 3 Vdd Power supply voltage. 4 RFIN This pin is AC coupled and matched to 50 Ohms. Information furnisheFd obry Apnrailcoge D, edviceelsi vise breylie,v eadn tdo bteo a cpcluaractee a nod rrdelieabrlse., Hpowleevaers, eno coFnotra pcritc eH, idtteiltieve rMy, iacnrdo wtoa pvlaec eC oorrdperosr: aAtnioalnog: Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 9 - 6 rights of third parties th2at 0m aAy rlepsuhlt afro mR iots ausde., S Cpehcifeicalmtionss fsoubrjdec,t tMo cAhan 0ge1 w8it2ho4ut n oPticheo. Nnoe : P9h7o8ne-:2 75801--33239-44370 0F (cid:127)a Oxr:d 9er7 o8n-li2ne5 a0t- w3w3w7.3analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their resOpercdtivee orw Onerns.-line at www.hAiptptilticea.tcioonm Support: Phone: 1-800-ANALOG-D

HMC308 / 308E v05.1107 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Evaluation PCB 9 E T M S T - S R E E I F I L P L M A K O C O L B S N I A B G & R O E V I List of Materials for Evaluation PCB 103802 [1] R D The circuit board used in the fi nal application should Item Description use RF circuit design techniques. Signal lines should J1, J2 PCB Mount SMA Connector have 50 ohm impedance while the package ground J3, J4 DC Pins leads should be connected directly to the ground U1 HMC308 / HMC308E Amplifi er plane similar to that shown. A sufficient number of PCB [2] 103220 Evaluation Board via holes should be used to connect the top and [1] Reference this number when ordering complete evaluation PCB bottom ground planes. The evaluation circuit board [2] Circuit Board Material: Roger 4350 shown is available from Hittite upon request. Information furnisheFd obry Apnrailcoge D, edviceelsi vise breylie,v eadn tdo bteo a cpcluaractee a nod rrdelieabrlse., Hpowleevaers, eno coFnotra pcritc eH, idtteiltieve rMy, iacnrdo wtoa pvlaec eC oorrdperosr: aAtnioalnog: Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties tha2t 0ma yA relpsuhlt faro mR itos uasde. ,S pCechifiecaltmionss fsoubrjedct, toM chAan g0e1 w8ith2ou4t nPotihceo. Nnoe : P9h7o8n-e2: 75801--332394-437 0 0F (cid:127)a Ox:r d9e7r o8n-l2in5e 0at- w33w7w3.analog.com 9 - 7 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their resOpercdtivee orw Onerns.-line at www.hAiptptilticea.tcioonm Support: Phone: 1-800-ANALOG-D