HMC755LP4E v05.0312 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Typical Applications Features The HmC755lp4e is ideal for: High Gain: 31 dB T •Cellular/3G & LTE/4G High pAe: 28% @ +33 dBm pout m •WiMAX, WiBro & Fixed Wireless low eVm: 2.5% @ +25 dBm pout s with 54 mbps ofDm signal E •Military & SATCOM - High output ip3: +43 dBm r •Test Equipment integrated Detector & power Control e 24 lead 4x4mm Qfn paTckage: 16mm² w o p Functional Diagram General Description E The HmC755lp4e is a high gain, high linearity GaAs & inGap HBT mmiC power amplifier covering 2.3 to r 2.8 GHz. The amplifier provides 31 dB of gain and A L +33 dBm of saturated power from a single +5V e supply. The power control pins (Ven1, 2, 3) can be n used to reduce the rf output power/quiescent cur- li O rent, or for full power down of the pA. The integrated - output power detector (VDeT) is internally coupled s and requires no external components. for +25 dBm r ofDm output power (64 QAm, 54 mbps), the HmC- e S 755lp4e achieves an error vector magnitude (eVm) i f of only 2.5% making it ideal for wimAX/lTe/4G Appli- i l cations. The amplifier is packaged in a compact Qfn p B smT package and requires a minimum of external m matching components. A Electrical SpecifiOcations, T = +25 °C, Vcc1, 2, 3 = +5V, VEN1, 2, 3 = +5V, Vcs = +5V A parameter min. Typ. max. Units frequency range 2.3 - 2.8 GHz Gain 28 31 dB Gain Variation over Temperature 0.05 dB/ °C input return loss 10 dB output return loss 7 dB output power for 1dB Compression (p1dB) 28 31 dBm saturated output power (psat) 33 dBm output Third order intercept (ip3) [1] 43 dBm error Vector magnitude @ 2.5 GHz 2.5 % (54 mbps ofDm signal @ +24.5 dBm pout) supply Current (icc1 + icc2 + icc3) 400 480 600 mA Control Current (ien1 + ien2 + ien3) 16 mA Bias Current (ics) 12 mA [1] Two-tone output power of +25 dBm per tone, 1 mHz spacing. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 1 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC755LP4E v05.0312 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Broadband Gain & Return Loss Gain vs. Temperature 40 40 T 30 35 m NSE (dB) 1200 SSS212112 N (dB) 2350 E - s ESPO GAI +25 C r R 0 20 +85 C e T- 40 C w -10 15 o -20 10 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4 4.3 2 2.2E2.4 2.6 2.8 3 3.2 p FREQUENCY (GHz) FREQUENCY (GHz) & r L A Input Return Loss vs. Temperature Output Return Loss vs. Temperature e n 0 0 O +25 C li +85 C B) -5 B) - 40 C - S (d S (d -5 s OS OS r N L -10 S N L e R R ETU ETU -10 fi R +25 C R -15 +85 C i - 40 C l B p -20 -15 m 2 2.2 2.4 2.6 2.8 3 3.2 2 2.2 2.4 2.6 2.8 3 3.2 A FREQUENCY (GHz) FREQUENCY (GHz) O Reverse Isolation vs. Temperature 0 -10 B) -20 +25 C d +85 C N ( -30 - 40 C O TI LA -40 O S I -50 -60 -70 2 2.2 2.4 2.6 2.8 3 3.2 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 2 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC755LP4E v05.0312 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz P1dB vs. Temperature Psat vs. Temperature 40 40 T m 35 35 s m) m) E r - P1dB (dB 30 Psat (dB 30 e 25 ++2855 CC 25 T++2855 CC w - 40 C - 40 C o 20 20 p 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 2.1 2.2 2E.3 2.4 2.5 2.6 2.7 2.8 2.9 3 & FREQUENCY (GHz) FREQUENCY (GHz) r A L e Output IP3 vs. Temperature @ 26 dBm Output IP3 vs. Temperature @ 2.4 GHz n 50 50 li O - 45 45 s ier IP3 (dBm) 40 S IP3 (dB) 40 f li 35 -++ 428055 CCC 35 -++ 428055 CCC p B m 30 30 A 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 18 19 20 21 22 23 24 25 26 27 FREQUENCY (GHz) SINGLE TONE POUT (dBm) O VDET Output Voltage vs. Temperature Power Compression @ 2.5 GHz 3.5 50 3 %) ++2855 CC E ( 40 2.5 - 40 C PA T (V) 2 N (dB), 30 E AI VD 1.5 m), G 20 B 1 d ut ( 10 Pout 0.5 Po Gain PAE 0 0 13 17 21 25 29 33 -20 -15 -10 -5 0 5 OUTPUT POWER (dBm) INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 3 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC755LP4E v05.0312 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Gain & Power vs. Supply Voltage Noise Figure vs. Temperature 50 12 dBm) 10 T P3 ( B) m m), I 40 E (d 8 E s B R d U N (dB), P1dB ( 30 Gain NOISE FIG 46 T+25 C wer - AI P1dB 2 +85 C G IP3 - 40 C o 20 0 4.5 5 5.5 2.2 2.3 E2.4 2.5 2.6 2.7 2.8 2.9 3 p SUPPLY VOLTAGE (V) FREQUENCY (GHz) & r L A EVM vs. Frequency Power Dissipation e (54 Mbps OFDM Signal) n 6 7 5.5 Max Pdiss @ +85C O 6 li W) DISSIPATION ( 4.545 S EVM (%) 345 222222......345678 GGGGGGHHHHHHzzzzzz ers - R 3.5 i E f W 2 O 3 i P l 2.5 B 1 p m 2 0 -20 -15 -10 -5 0 5 15 17 19 21 23 25 27 A INPUT POWER (dBm) OUTPUT POWER (dBm) O EVM vs. Temperature @ 2.5 GHz (54 Mbps OFDM Signal) 7 6 5 %) 4 M ( ++2855 CC EV 3 - 40 C 2 1 0 15 17 19 21 23 25 27 OUTPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC755LP4E v05.0312 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Typical Supply Current vs. Absolute Maximum Ratings Supply Voltage Collector Bias Voltage (Vcc1, Vcc2, Vcc3) 5.5V Vcc (V) icq (mA) T Control Voltage (Ven1, 2, 3) Vcc +0.5 4.5 430 m rf input power (rfin)(Vcc = +5V) +5 dBm 5.0 480 s Junction Temperature 150 °C 5.5 E530 Continuous pdiss (T = 85 °C) - 5.2 w (derate 80 mw/°C above 85 °C) r Thermal resistance e 12.5 °C/w (junction to ground paddle) T w storage Temperature -65 to +150 °C eleCTrosTATiC sensiTiVe DeViCe o operating Temperature -40 to +85 °C oBserVe HAnDlinG preCAUTions p esD sensitivity (HBm) Class 1B E & Outline Drawing r A L e n li O - s r e S i f i l p B m A O noTes: 1. leADfrAme mATeriAl: Copper AlloY 2. Dimensions Are in inCHes [millimeTers] 3. leAD spACinG TolerAnCe is non-CUmUlATiVe. 4. pAD BUrr lenGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll noT eXCeeD 0.05mm. 6. All GroUnD leADs AnD GroUnD pADDle mUsT Be solDereD To pCB rf GroUnD. 7. refer To HiTTiTe AppliCATion noTe for sUGGesTeD lAnD pATTern. Package Information part number package Body material lead finish msl rating package marking [1] HmC755lp4e roHs-compliant low stress injection molded plastic 100% matte sn msl3 [2] H755 XXXX [1] 4-Digit lot number XXXX [2] max peak reflow temperature of 260 °C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 5 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC755LP4E v05.0312 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Pin Descriptions pin number function Description interface schematic These pins are not connected internally. However, all data T 1, 3, 5, 6, 12 - 14, 18, 19, 21, 22, 24 n/C shown herein was measured with these pins connected to m rf/DC ground. Ground: Backside of package has exposed metal paddle E s 2 GnD that must be connected to ground thru a short path. - Vias under the device are required. r e T 4 rfin This pin is DC coupled w and matched to 50 ohms. o p E & 7 VCs DC power supply pin for bias circuitry. r L A e n power control pins. for max power these pins should be connecteOd to 5V. This voltage li 8 - 10 Ven1 - 3 can be reduced, or r1-r4 resistor values increased to reduce the quiescent current. - for full power down, apply V <0.5V s r S e i f i 11 VDeT DC voltage output proportional to rfoUT signal. l B p m A O rf output and DC bias for the output stage. external 15, 16, 17 rfoUT rf matching, bypass capacitors, and pull up choke are required as shown in the application circuit. power supply voltage for the second amplifier stage. 20 Vcc2 external bypass capacitors and pull up choke are required as shown in the application schematic. power supply voltage for the first amplifier stage. external 23 Vcc1 bypass capacitors are required as shown in the application schematic. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 6 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC755LP4E v05.0312 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Evaluation PCB T m s E - r e T w o p E & r A L e n li O - s r e S i f i l p B m A O List of Materials for Evaluation PCB 123643 [1] item Description item Description J1, J2 pCB mount smA Connector U1 HmC755lp4e power Amplifier J3, J4 2mm molex Header pCB [2] 123641 eval Board C1 - C10 100 pf Capacitor, 0402 pkg. [1] reference this number when ordering complete evaluation pCB C11 3 pf Capacitor Ultra low esD, 0603 pkg. [2] Circuit Board material: rogers 4350 or Arlon 25fr C12 1.5 pf Capacitor Ultra low esD, 0603 pkg. The circuit board used in the application should C13 - C15 1000 pf Capacitor, 0603 pkg. use rf circuit design techniques. signal lines sho- C16 2.2 µf Capacitor, Tantalum uld have 50 ohm impedance while the package C17 4.7 µf Capacitor, Tantalum ground leads and exposed paddle should be con- C18 - C12 10000 pf Capacitor, 0402 pkg. nected directly to the ground plane similar to that l1 10 nH inductor, 0603 pkg. shown. A sufficient number of via holes should be used to connect the top and bottom ground r1 0 ohm resistor, 0402 pkg. planes and the evaluation board should be mounted r2 200 ohm resistor, 0402 pkg. to an appropriate heat sink. The evaluation circuit r3 300 ohm resistor, 0402 pkg. board shown is available from Hittite upon request. r4 130 ohm resistor, 0402 pkg. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 7 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC755LP4E v05.0312 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Application Circuit T m E s - r e T w o p E & r L A e n O li - s r S e i f i l B p m A O TL1 TL2 impedance 28 ohm 50 ohm physical length 0.0465” 0.1950” electrical length @ 25 GHz 5.9° 22.6° package edge to center of Center of capacitor C11 to measurement capacitor C11 center of capacitor C12 pCB material: 10 mil rogers 4350 or Arlon 25fr For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 Application Support: Phone: 978-250-3343 or apps@hittite.com