Photomicrosensor (Transmissive) EE-SX1106 Be sure to read Precautions on page25. ■ Dimensions ■ Features Note:All units are in millimeters unless otherwise indicated. (cid:129)Ultra-compact with a slot width of 3mm. (cid:129)PCB mounting type. (cid:129)High resolution with a 0.4-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rated value Two, C0.7 Emitter Forward current I 50 mA Gate F (seenote 1) Optical axis Pulse forward cur- I --- 5.4 FP rent Reverse voltage V 5 V R Detector Collector–Emitter V 30 V CEO 5 min. Two, R1 voltage Emitter–Collector V 4.5 V Four, 0.2 ECO Two, C0.2 voltage Collector current I 30 mA Four, 0.5 C Collector dissipa- P 80 mW C tion (seenote 1) Ambient tem- Operating Topr –25°C to 85°C Internal Circuit 1−00 . 1 d ia perature Storage Tstg –30°C to 85°C Soldering temperature Tsol 260°C 1.4 − 00 . 1 d ia (see note 2) Note:1. Refer to the temperature rating chart if the ambient temper- ature exceeds 25°C. 2. Complete soldering within 3 seconds. Terminal No. Name A Anode K Cathode Unless otherwise specified, C Collector the tolerances are ±0.2 mm. E Emitter ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.3 V typ., 1.6 V max. I = 50 mA F F Reverse current I 10 μA max. V = 5 V R R Peak emission wavelength λ 950 nm typ. I = 50 mA P F Detector Light current I 0.2 mA min. I = 20 mA, V = 5 V L F CE Dark current I 500 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 800 nm typ. V = 5 V P CE length Rising time tr 10 μs typ. V = 5 V, R = 100 Ω, CC L I = 20mA F Falling time tf 10 μs typ. V = 5 V, R = 100 Ω, CC L I = 20mA F 60 EE-SX1106 Photomicrosensor (Transmissive)

■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) A) mW) mA) TVaC E= = 2 55 °VC d current I (mF dissipation P (C ard current I (F current I (mA)L orwar ector Forw Light F oll C Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA) Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) urrent I (mA)L Ta = 25°C IIIFFF === 221505 mmmAAA ht current I (%)L VIFC =E 2=0 5 m VA (nA)urrent ID VCE =V 1CVE0 C=VE2 =0 V30 V Light c IF = 10 mA ative lig Dark c IF = 5 mA Rel Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Light Current Sensing Position Characteristics Sensing Position Characteristics Characteristics (Typical) (Typical) (Typical) s) VTaC E= = 2 55 °VC %) ITVFaC = E= 2= 20 55 m °VCA %) ITVFaC = E= 2= 20 55 m °VCA μResponse time tr, tf ( RRRLLL === 151K0000 Ω ΩΩ elative light current I (L elative light current I (L R R Light current It (mA) Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1106 Photomicrosensor (Transmissive) 61

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