Photomicrosensor (Transmissive) EE-SG3/EE-SG3-B Be sure to read Precautions on page25. ■ Dimensions ■ Features Note:All units are in millimeters unless otherwise indicated. (cid:129)Dust-proof model. (cid:129)Solder terminal model (EE-SG3). (cid:129)PCB terminal model (EE-SG3-B). ■ Absolute Maximum Ratings (Ta = 25°C) Two, 3.2±0.2 191±30.1 dia. holes 25.4±0.2 Item Symbol Rated value 3.6±0.2 Emitter Forward current I 50 mA F (seenote 1) Optical axis Pulse forward cur- I 1 A FP rent (seenote2) Reverse voltage V 4 V R 1.2 Detector Collector–Emitter V 30 V Four, 0.5 CEO Four, 0.25 voltage 2.54±0.3 7.62±0.3 0.8 0.6 Emitter–Collector V --- Four2, .15.45 Cross section AA voltage ECO Collector current I 20 mA Cross section AA C Collector dissipa- P 100 mW C tion (seenote 1) Internal Circuit Ambient tem- Operating Topr –25°C to 85°C perature Storage Tstg –30°C to 100°C K C Unless otherwise specified, the Soldering temperature Tsol 260°C tolerances are as shown below. (see note 3) A E Dimensions Tolerance Note:1. Refer to the temperature rating chart if the ambient temper- 3 mm max. ±0.3 ature exceeds 25°C. Terminal No. Name 2. The pulse width is 10 μs maximum with a frequency of 3 < mm ≤ 6 ±0.375 100Hz. A Anode 6 < mm ≤ 10 ±0.45 3. Complete soldering within 10 seconds. K Cathode C Collector 10 < mm ≤ 18 ±0.55 E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 2 mA min., 40 mA max. I = 15 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 30 mA, I = 1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 106 EE-SG3/EE-SG3-B Photomicrosensor (Transmissive)

■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) A) W) A) Ta = 25°C d current I (mF PIFC ssipation P (mC d current I (mF TTTaaa === 2−7530°0°CC°C urrent I (mA)L VCE = 10 V Forwar ector di Forwar Light c oll C Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA) Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) %) Light current I (mA)L IIIIFFFF ==== 21120505T mmmma AAAA= 25°C Relative light current I (L VIFC =E 2=0 5 m VA (nA)Dark current ID V0 ClEx = 10 V IF = 5 mA Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 μResponse time tr, tf (s) TVaC C= = 2 55° VC (%)Relative light current IL (oCpetincatel ra VIToxFaC fi= s E= ) 2= 20 15 m0°C AV Relative light current I (%)L 10864200000 d TIVFaC = E= 2= 20 15 m0°C AV (Center of optical axis) 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance RL (kΩ) Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SG3/EE-SG3-B Photomicrosensor (Transmissive) 107

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