图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: DVIULC6-4SC6
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

DVIULC6-4SC6产品简介:

ICGOO电子元器件商城为您提供DVIULC6-4SC6由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 DVIULC6-4SC6价格参考¥1.45-¥1.80。STMicroelectronicsDVIULC6-4SC6封装/规格:TVS - 二极管, 。您可以下载DVIULC6-4SC6参考资料、Datasheet数据手册功能说明书,资料中有DVIULC6-4SC6 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

电路保护

描述

TVS DIODE 5VWM 17VC SOT23-6TVS二极管阵列 ESD PROTECTION

产品分类

TVS - 二极管

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,TVS二极管,TVS二极管阵列,STMicroelectronics DVIULC6-4SC6DVI

数据手册

点击此处下载产品Datasheet

产品型号

DVIULC6-4SC6

不同频率时的电容

0.85pF @ 1MHz

产品目录页面

点击此处下载产品Datasheet

产品种类

TVS二极管阵列

供应商器件封装

SOT-23-6

其它名称

497-5237-2
DVIULC64SC6

其它有关文件

http://www.st.com/web/catalog/sense_power/FM114/CL1137/SC1490/PF109008?referrer=70071840http://www.st.com/web/catalog/sense_power/FM114/CL1137/SC1767/PF109008?referrer=70071840

击穿电压

6 V

功率-峰值脉冲

80W

包装

带卷 (TR)

单向通道

-

双向通道

4

商标

STMicroelectronics

外壳高度

1.3 mm

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

SOT-23-6

封装/箱体

SOT-23-6L

尺寸

1.75 mm W x 3.05 mm L x 1.3 mm H

峰值脉冲功率耗散

80 W

工作温度

-40°C ~ 125°C (TJ)

工具箱

/product-detail/zh/Q7525712/497-8023-KIT-ND/4158066/product-detail/zh/Q7525688/497-8022-KIT-ND/4158065/product-detail/zh/Q3108517/497-8009-KIT-ND/1306141

工厂包装数量

3000

应用

通用

最大工作温度

+ 125 C

最小工作温度

- 40 C

极性

Bidirectional

标准包装

3,000

电压-击穿(最小值)

6V

电压-反向关态(典型值)

5V

电压-箝位(最大值)@Ipp

17V

电容

1 pF

电流-峰值脉冲(10/1000µs)

5A (8/20µs)

电源线路保护

端接类型

SMD/SMT

类型

转向装置(轨至轨)

系列

DVIULC6

通道

4 Channels

钳位电压

12 V

推荐商品

型号:P4SMA220CA

品牌:Bourns Inc.

产品名称:电路保护

获取报价

型号:1.5KE56AE3/TR13

品牌:Microsemi Corporation

产品名称:电路保护

获取报价

型号:GSOT36C-G3-18

品牌:Vishay Semiconductor Diodes Division

产品名称:电路保护

获取报价

型号:MASMBJ14AE3

品牌:Microsemi Corporation

产品名称:电路保护

获取报价

型号:BZT03C39-TR

品牌:Vishay Semiconductor Diodes Division

产品名称:电路保护

获取报价

型号:SMBJ45A

品牌:ON Semiconductor

产品名称:电路保护

获取报价

型号:AOZ8804ADI

品牌:Alpha & Omega Semiconductor Inc.

产品名称:电路保护

获取报价

型号:ESDAVLC8-1BT2

品牌:STMicroelectronics

产品名称:电路保护

获取报价

样品试用

万种样品免费试用

去申请
DVIULC6-4SC6 相关产品

15KPA54A

品牌:Littelfuse Inc.

价格:

TA6F16AHM3/6B

品牌:Vishay Semiconductor Diodes Division

价格:

UESD6.0DT5G

品牌:ON Semiconductor

价格:¥1.06-¥5.14

1.5SMC24A

品牌:Bourns Inc.

价格:

SMCJ170CA-TP

品牌:Micro Commercial Co

价格:

MXLSMCJLCE11AE3

品牌:Microsemi Corporation

价格:

P6SMB6.8CA

品牌:Littelfuse Inc.

价格:¥0.70-¥2.23

SMCJ14CA-13-F

品牌:Diodes Incorporated

价格:

PDF Datasheet 数据手册内容提取

DVIULC6-4SC6 Ultralow capacitance ESD protection Datasheet  production data Features ■ 4-line ESD protection (IEC 61000-4-2) ■ Protects V when applicable BUS ■ Ultralow capacitance: 0.6 pF at 825 MHz ■ Fast response time compared with varistors SOT23-6L ■ SOT23-6L package (JEDEC MO178AB) ■ RoHS compliant Benefits Applications ■ ESD standards compliance guaranteed at ■ DVI ports up to 1.65 Gb/s device level, hence greater immunity at system ■ HDMI ports up to 1.65 Gb/s level ■ IEEE 1394a, and b up to 1.6Gb/s ■ ESD protection of V , when applicable, BUS allows ESD current flowing to ground when ■ USB 2.0 ports up to 480 Mb/s (high speed), ESD event occurs on data line backwards compatible with USB 1.1 low and full speed ■ Optimized rise and fall times for maximum data integrity ■ Ethernet port: 10/100/1000 Mb/s ■ Consistent D+ / D- signal balance: ■ SIM card protection – Optimum capacitance matching tolerance ■ Video line protection for ultralow intra-pair skew: I/O to ground = 0.015 pF, Description I/O to I/O = 0.007 pF – Matching high bit rate DVI, HDMI, and The DVIULC6-4SC6 is a monolithic, application IEEE1394 requirements specific discrete device dedicated to ESD ■ Low PCB space occupation: 9mm2 protection of high speed interfaces, such as DVI, HDMI, IEEE1394a, and b, USB 2.0, Ethernet ■ Low leakage current for longer operation of links and video lines. battery powered devices Its ultralow line capacitance secures a high level ■ Higher reliability offered by monolithic of signal integrity without compromise in integration protecting sensitive chips against the most stringently characterized ESD strikes. Complies with these standards ■ IEC 61000-4-2 level 4: – ±15 kV (air discharge) – ±8 kV (contact discharge) ■ MIL STD883G-Method 3015-7 September 2012 Doc ID 11599 Rev 4 1/12 This is information on a product in full production. www.st.com 12

Characteristics DVIULC6-4SC6 1 Characteristics Figure 1. Functional diagram I/O1 11 6 I/O4 GND 2 5 VBUS I/O2 3 4 I/O3 T able 1. Absolute ratings Symbol Parameter Value Unit IEC 61000-4-2 air discharge ±15 V Peak pulse voltage IEC 61000-4-2 contact discharge ±15 kV PP MIL STD883G-Method 3015-7 ±25 P Peak pulse power 80 W pp T Storage temperature range -55 to +150 °C stg T Operating junction temperature range -40 to +125 °C j T Lead solder temperature (10 seconds duration) 260 °C L T able 2. Electrical characteristics (T = 25 °C) amb Value Symbol Parameter Test conditions Unit Min. Typ. Max. I Leakage current V = 5 V - - 0.5 µA RM RM Breakdown voltage V I = 1 mA 6 - - V BR between V and GND R BUS I = 1 A, t = 8/20 µs PP p - - 12 V Any I/O pin to GND V Clamping voltage CL I = 5 A, t = 8/20 µs PP p - - 17 V Any I/O pin to GND Capacitance between I/O VR = 0 V, F= 1 MHz - 0.85 1 C i/o-GND and GND V = 0 V, F= 825 MHz - 0.6 - R pF C Capacitance variation i/o- - - 0.015 - between I/O and GND GND V = 0 V, F= 1 MHz - 0.42 0.5 R C Capacitance between I/O i/o-i/o V = 0 V, F= 825 MHz - 0.3 - R pF Capacitance variation C - - 0.007 - i/o-i/o between I/O 2/12 Doc ID 11599 Rev 4

DVIULC6-4SC6 Characteristics Figure 2. L ine capacitance versus line Figure 3. Line capacitance versus frequency voltage (typical values) (typical values) C(pF) C(pF) 1.0 1.0 00..98 VosVTFcBj==U=58S02205O5m°MPCVEHRNzMS 00..89 VVVoI-sTBOcUj=/G=S3N2O0D5mP=°VEC 0RNVMS 0.7 0.7 0.6 0.6 0.5 CI/O- GND 0.5 CI/O- GND 0.4 0.4 0.3 0.3 0.2 0.2 0.1 Data line voltage (v) 0.1 F(MHz) CI/O-CI/O 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 10 100 1000 10000 Figure 4. R elative variation of leakage Figure 5. Frequency response current versus junction temperature (typical values) IRM[Tj] /IRM[Tj=25°C] S21(dB) Attenuation 5 0 4 -2 3 -4 2 -6 Tj(°C) F(Hz) 1 -8 25 50 75 100 125 111000000...000kkk 111...000MMM 111000...000MMM 111000000...000MMM 111...000GGG Figure 6. Remaining voltage after the Figure 7. Remaining voltage after the DVIULC6-4SC6 during DVIULC6-4SC6 during positive ESD surge(1) negative ESD surge(1) 1. measurements were done with DVIULC-4SC6 in open circuit Doc ID 11599 Rev 4 3/12

Characteristics DVIULC6-4SC6 Figure 8. Analog crosstalk results dB 0.00 -30.00 -60.00 -90.00 F (Hz) -120.00 100.0k 1.0M 10.0M 100.0M 1.0G 4/12 Doc ID 11599 Rev 4

DVIULC6-4SC6 Application examples 2 Application examples Figure 9. DVI/HDMI digital single link application HOST (PC,graphics cards,set-top box,DVD player) Display (LCD monitor,flat panel,display,projector) Tx0- RX0- Tx0+ RX0+ DVI connector TMDS TMDS DE Transmitter 11 6 11 6 Receiver DE Pixel 2 5 2 5 Pixel Data 3 4 3 4 Data GCoranptrhoicllser VCsloycnkc TTTTxxxx1122-+-+ RRRRxxxX1122-+-+ VCsloycnkc DCiosnptlraoyller Hsync 11 6 11 6 Hsync 2 5 TMDS Links 2 5 3 4 3 4 TC- RC- TC+ RC+ Figure 10. T1/E1/Ethernet protection Tx SMP75-8 +VCC DATA 4 3 5 2 100nF 6 11 TRANSCEIVER Rx SMP75-8 Doc ID 11599 Rev 4 5/12

Technical information DVIULC6-4SC6 3 Technical information 3.1 Surge protection The DVIULC6-4SC6 is particularly optimized to perform ESD surge protection based on the rail to rail topology. The clamping voltage V can be calculated as follows: CL V + = V + V for positive surges CL BUS F, V - = - V for negative surges CL F, with: V = V + R .I F T d p V = forward drop voltage, V = forward drop threshold voltage) F T Calculation example We can assume that the value of the dynamic resistance of the clamping diode is typically: R = 1.4  and V = 1.2 V. d T For an IEC 61000-4-2 surge Level 4 (Contact Discharge: V = 8 kV, R = 330 ), g g V = +5 V, and, in a first approximation, we assume that: I = V / R = 24 A. BUS p g g We find: V + = +39 V CL V - = -34 V CL Note: The calculations do not take into account phenomena due to parasitic inductances. 3.2 Surge protection application example If we consider that the connections from the pin V to V and from GND to PCB GND BUS CC plane are two tracks 10 mm long and 0.5 mm wide, we can assume that the parasitic inductances, L of these tracks are about 6 nH. So when an IEC 61000-4-2 surge occurs, W due to the rise time of this spike (tr = 1 ns), the voltage V has an extra value equal to CL L ·dI/dt. W The dI/dt is calculated as: dI/dt = I /t = 24 A/ns for an IEC 61000-4-2 surge level 4 (contact p r discharge V = 8 kV, R = 330  g g The over voltage due to the parasitic inductances is: L .dI/dt = 6 x 24 = 144 V W By taking into account the effect of these parasitic inductances due to unsuitable layout, the clamping voltage will be: V + = +39 + 144 = 183 V CL V - = -34 - 144 = -178 V CL We can reduce as much as possible these phenomena with simple layout optimization. This is the reason why some recommendations have to be followed (see Section3.3: How to ensure good ESD protection). 6/12 Doc ID 11599 Rev 4

DVIULC6-4SC6 Technical information 3.3 How to ensure good ESD protection While the DVIULC6-4SC6 provides a high immunity to ESD surge, an efficient protection depends on the layout of the board. In the same way, with the rail to rail topology, the track from V pin to the power supply +V , and from V pin to GND pin must be as short as BUS CC BUS possible to avoid over voltages due to parasitic phenomena (see Figure11 and Figure12 for layout considerations). Figure 11. IESD behavior: parasitic phenomena due to unsuitable layout VCL+ 183V ESD VBUS Lw +VCC di SURGE Lw POSITIVE Lwdi dt SURGE VF dt VCC+VF I/O t tr=1ns VCL+ =VBUS+VF+Lw ddti surge >0 tr=1ns t VI/O di -VF Lwdi VCL- =-VF-Lwdt surge <0 dt di NEGATIVE -Lwdt SURGE GND -178V VCL- Figure 12. ESD behavior: layout optimization and addition of a 100 nF capacitor VCL+ Lw ESD REF2=+VCC POSITIVE SURGE SURGE C=100nF t I/O VCL+=VCC+VF surge >0 t VI/O VCL- =-VF surge <0 NEGATIVE SURGE REF1=GND VCL- Doc ID 11599 Rev 4 7/12

Technical information DVIULC6-4SC6 Figure 13. PCB layout considerations (V connection is application dependent) CC DVI D+1 1 D-1 VCC Connector GND C = 100nF D+2 Side D-2 DVIULC6-4SC6 It’s often harder to connect the power supply near to the DVIULC6-4SC6 unlike the ground thanks to the ground plane that allows a short connection. To ensure the same efficiency for positive surges when the connections can’t be short enough, we recommend putting close to the DVIULC6-4SC6, between V and ground, a BUS capacitance of 100 nF to prevent these kinds of disturbances (see Figure12 and Figure13). The addition of this capacitance will allow a better protection by providing a constant voltage during a surge. Figure14, Figure6, and Figure7 show the improvement of the ESD protection according to the recommendations described in Section3.3. Figure 14. ESD behavior: measurement conditions (with coupling capacitor) ESD SURGE TEST BOARD DVIULC6-4SC6H Vcc(+5V) C=100 nF Important: An important precaution to take is to put the protection device as close as possible to the disturbance source (generally the connector). 8/12 Doc ID 11599 Rev 4

DVIULC6-4SC6 Technical information 3.4 Crosstalk behavior Figure 15. Crosstalk phenomena R G1 Line 1 VG1 RL1 α1VG1+β12VG2 RG2 Line 2 VG2 RL2 α2VG2+β21VG1 DRIVERS RECEIVERS The crosstalk phenomena is due to the coupling between 2 lines. The coupling factor ( or 12  ) increases when the gap across lines decreases, particularly in silicon dice. In the 21 example above the expected signal on load R is  V , in fact the real voltage at this point L2 2 G2 has got an extra value  V . This part of the V signal represents the effect of the 21 G1 G1 crosstalk phenomenon of line 1 on line 2. This phenomenon has to be taken into account when the drivers impose fast digital data or high frequency analog signals in the disturbing line. The perturbed line will be more affected if it works with low voltage signal or high load impedance (few k). Figure 16. Analog crosstalk measurements TTRRAACCKKIINNGG GGEENNEERRAATTOORR SSPPEECCTTRRUUMM AANNAALLYYSSEERR TTEESSTT BBOOAARRDD 5500ΩW C6 UL VI D Vcc 5500ΩW VVgg Vin Vout CC==110000nnFF Figure16 gives the measurement circuit for the analog application. In usual frequency range of analog signals (up to 240 MHz) the effect on disturbed line is less than -45 dB (see Figure8). As the DVIULC6-4SC6 is designed to protect high speed data lines, it must ensure a good transmission of operating signals. The frequency response (Figure5) gives attenuation information and shows that the DVIULC6-4SC6 is well suitable for data line transmission up to 1.65 Gb/s. Doc ID 11599 Rev 4 9/12

Package information DVIULC6-4SC6 4 Package information ● Epoxy meets UL94, V0 ● Lead-free packages In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. T able 3. SOT23-6L dimensions Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 0.90 - 1.45 0.035 - 0.057 c A1 q L A1 0 - 0.15 0 - 0.006 A H E A2 0.90 - 1.30 0.035 - 0.051 b 0.30 - 0.50 0.012 - 0.020 c 0.09 - 0.20 0.004 - 0.008 e D 2.80 - 3.05 0.11 - 0.118 D b E 1.50 - 1.75 0.059 - 0.069 e e - 0.95 - - 0.037 - H 2.60 - 3.00 0.102 - 0.118 A2 L 0.30 - 0.60 0.012 - 0.024  0° - 10° 0° - 10° Figure 17. Footprint - dimensions in mm [inches] 1.20 1.10 [0.047] [0.043] 0.60 [0.023] 0.95 [0.037] 2.30 [0.091] 3.50 [0.138] 10/12 Doc ID 11599 Rev 4

DVIULC6-4SC6 Ordering information 5 Ordering information T able 4. Ordering information Order code Marking Package Weight Base qty Delivery mode DVIULC6-4SC6 DL46 SOT23-6L 16.7 mg 3000 Tape and reel 6 Revision history T able 5. Document revision history Date Revision Changes Aug-2005 1 First Issue. ECOPACK statement updated. Operating junction temperature 09-Apr-2010 2 range specified in Table1. 14-Sep-2011 3 Added peak pulse power in Table1. Updated illustration and dimensions A1 max., b min., and L 06-Sep-2012 4 min. in Table3. Doc ID 11599 Rev 4 11/12

DVIULC6-4SC6 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 11599 Rev 4