Smart Low Side Power Switch HITFET BTS 3410G Features Product Summary (cid:1) Logic Level Input Drain source voltage V 42 V DS (cid:1) Input Protection (ESD) On-state resistance R 200 m(cid:1) DS(on) (cid:1) Thermal shutdown with auto restart Nominal load current I 1.3 A D(Nom) • Green product (RoHS compliant) Clamping energy E 150 mJ AS (cid:1) Overload protection (cid:1) Short circuit protection (cid:1) Overvoltage protection (cid:1) Current limitation (cid:1) Analog driving possible Application (cid:2) All kinds of resistive, inductive and capacitive loads in switching or linear applications (cid:2) µC compatible power switch for 12 V DC applications (cid:2) Replaces electromechanical relays and discrete circuits General Description (cid:3) N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M (cid:1) Drain1 HITFET Pin 7and 8 In1 Logic Pin 2 Channel 1 Pin 1 Source1 Drain2 Pin 5and 6 In2 Logic Pin 4 Channel 2 Pin 3 Source2 Complete product spectrum and additional information http://www.infineon.com/hitfet Datasheet 1 Rev. 1.3, 2007-11-06

Smart Low Side Power Switch HITFET BTS 3410G Pin Description Pin Configuration (Top view) Pin Symbol Function 1 S1 Source Channel 1 S1 1(cid:1) 8 D1 2 IN1 Input Channel 1 3 S2 Source Channel 2 IN1 2 7 D1 4 IN2 Input Channel 2 S2 3 6 D2 5 D2 Drain Channel 2 IN2 4 5 D2 6 D2 Drain Channel 2 PG-DSO-8-25 7 D1 Drain Channel 1 8 D1 Drain Channel 1 (cid:1) Drain1 Pin 7, 8 HITFET Current Overvo ltage- Limitation Protection Vbb In1 Gate-Driving Unit Pin 2 M Over- temperature Overload Protection Short circuit Protection ESD Protection Pin 1 Source1 Drain2 Pin 5, 6 Current Overvoltage- Limitation Protection Vbb In2 Gate-Driving Unit Pin 4 M Over- temperature Overload Protection Short circuit Protection ESD Protection Pin 3 Source2 Datasheet 2 Rev. 1.3, 2007-11-06

Smart Low Side Power Switch HITFET BTS 3410G Maximum Ratings at T = 25°C, unless otherwise specified j Parameter Symbol Value Unit Drain source voltage V 42 V DS Drain source voltage for short circuit protection1) V 18 DS(SC) T = -40...150 °C j Continuous input current1) I mA IN -0.2V (cid:4) V (cid:4) 10V no limit IN V < -0.2V or V > 10V | I | (cid:4) 2 IN IN IN Operating temperature T -40 ...+150 °C j Storage temperature T -55 ... +150 stg Power dissipation2)5) P 0.8 W tot T = 85 °C A Unclamped single pulse inductive energy1) E 150 mJ AS each channel Load dump protection V 1)3) = V + V V 50 V LoadDump A S LD V = 0 and 10 V, t = 400 ms, R = 2 (cid:1), IN d I R = 9 (cid:1), V = 13.5 V L A Electrostatic discharge voltage1) (Human Body Model) VESD 2 kV according to Jedec norm EIA/JESD22-A114-B, Section 4 Thermal resistance junction - ambient: per channel R K/W thJA @ 6 cm2 cooling area2) one channel on 100 both channels on 160 1not subject to production test, specified by design 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. 3VLoaddumpis setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5 not subject to production test, calculated by RTHJA and Rds(on) Datasheet 3 Rev. 1.3, 2007-11-06

Smart Low Side Power Switch HITFET BTS 3410G Electrical Characteristics Parameter Symbol Values Unit at T = 25°C, unless otherwise specified min. typ. max. j Characteristics Drain source clamp voltage V 42 - 55 V DS(AZ) T = - 40 ...+ 150, I = 10 mA j D Off-state drain current Tj = -40 ... +150°C IDSS - 1.5 10 µA V = 32 V, V = 0 V DS IN Input threshold voltage V V IN(th) I = 0.3 mA, T = 25 °C 1.3 1.7 2.2 D j I = 0.3 mA, T = 150 °C 0.8 - - D j On state input current I - 10 30 µA IN(on) On-state resistance R m(cid:1) DS(on) VIN = 5 V, ID = 1.4 A, Tj = 25 °C - 190 240 V = 5 V, I = 1.4 A, T = 150 °C - 350 480 IN D j On-state resistance R DS(on) V = 10 V, I = 1.4 A, T = 25 °C - 150 200 IN D j V = 10 V, I = 1.4 A, T = 150 °C - 280 400 IN D j Nominal load current per channel5) I A D(Nom) V = 0.5 V, T < 150°C, V = 10 V, T = 85 °C, DS j IN A one channel on 1.3 1.65 - both channels on 1 1.3 - Current limit (active if V >2.5 V)2) I 5 7.5 10 DS D(lim) V = 10 V, V = 12 V, t = 200 µs IN DS m 1not subject to production test, specified by design 2Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on cond and a short circuit occurs, these values might be exceeded for max. 50 µs. 5 not subject to production test, calculated by RTHJA and Rds(on) Datasheet 4 Rev. 1.3, 2007-11-06

Smart Low Side Power Switch HITFET BTS 3410G Electrical Characteristics Parameter Symbol Values Unit at T = 25°C, unless otherwise specified min. typ. max. j Dynamic Characteristics Turn-on time V to 90% I : t - 45 100 µs IN D on R = 4.7 (cid:1), V = 0 to 10 V, V = 12 V L IN bb Turn-off time V to 10% I : t - 60 100 IN D off R = 4.7 (cid:1), V = 10 to 0 V, V = 12 V L IN bb Slew rate on 70 to 50% Vbb: -dVDS/dton - 0.4 1.5 V/µs R = 4.7 (cid:1), V = 0 to 10 V, V = 12 V L IN bb Slew rate off 50 to 70% Vbb: dVDS/dtoff - 0.6 1.5 R = 4.7 (cid:1), V = 10 to 0 V, V = 12 V L IN bb Protection Functions1) Thermal overload trip temperature T 150 175 - °C jt Thermal hysteresis2) (cid:5)T - 10 - K jt Input current protection mode I 25 50 300 µA IN(Prot) Input current protection mode I - 40 300 IN(Prot) T = 150 °C j Unclamped single pulse inductive energy2) E 150 - - mJ AS each channel I = 0.9 A, T = 25 °C, V = 12 V D j bb Inverse Diode Inverse diode forward voltage V - 1 - V SD I = 7 A, t = 250 µs, V = 0 V, F m IN t = 300 µs P 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2not subject to production test, specified by design Datasheet 5 Rev. 1.3, 2007-11-06

Smart Low Side Power Switch HITFET BTS 3410G Block diagram Terms Inductive and overvoltage output clamp RL D V Z IIN D IN ID VDS Vbb HITFET S S VIN HITFET Input circuit (ESD protection) Short circuit behaviour Gate Drive Input VIN SGorouurcned/ IIN IDS Tj Datasheet 6 Rev. 1.3, 2007-11-06

Smart Low Side Power Switch HITFET BTS 3410G 1 Overall maximum allowable power 2 On-state resistance dissipation; P = f(T ) resp. R = f(T); I =1.4A; V =10V tot S ON j D IN P = f(T ) @ R =80 K/W tot A thJA 3 500 m(cid:1) W max. 400 T n) ot 2 S DS(o 350 Pt R 300 T typ. A 1.5 250 200 1 150 100 0.5 50 0 0 -50 -25 0 25 50 75 100 °C 150 -50 -25 0 25 50 75 100 125 °C 175 T T j j 3 On-state resistance 4 Typ. input threshold voltage R = f(T); I = 1.4A; V =5V V = f(T); I = 0.15 mA; V = 12V ON j D IN IN(th) j D DS 500 2 max. m(cid:1) V 400 1.6 S(on) 350 typ. S(th) 1.4 D G R 300 V 1.2 250 1 200 0.8 150 0.6 100 0.4 50 0.2 0 0 -50 -25 0 25 50 75 100 125 °C 175 -50 -25 0 25 50 75 100 °C 150 T T j j Datasheet 7 Rev. 1.3, 2007-11-06

Smart Low Side Power Switch HITFET BTS 3410G 5 Typ. transfer characteristics 6 Typ. short circuit current ID=f(VIN); VDS=12V; TJstart=25°C ID(lim) = f(Tj); VDS=12V Parameter: V IN 8 10 A A 8 6 m) 7 D 5 D(li I I 6 Vin=10V 4 5 5V 4 3 3 2 2 1 1 0 0 0 1 2 3 4 5 6 7 8 V 10 -50 -25 0 25 50 75 100 125 °C 175 V T IN j 7 Typ. output characteristics 8 Typ. off-state drain current ID=f(VDS); TJstart=25°C IDSS = f(Tj) Parameter: V IN 10 Vin=10V 11 A 7V µA max. 8 9 6V 7 8 5V S ID 6 4V IDS 7 6 5 5 4 4 3 3 3V 2 2 typ. 1 1 00 1 2 3 4 V 6 0-50 -25 0 25 50 75 100 125 °C 175 V T DS j Datasheet 8 Rev. 1.3, 2007-11-06

Smart Low Side Power Switch HITFET BTS 3410G 9 Typ. overload current 10 Typ. transient thermal impedance I = f(t),V =12 V, no heatsink Z =f(t ) @ 6 cm2 cooling area D(lim) bb thJA p Parameter: T Parameter: D=t /T ; one channel on jstart p 12 102 K/W A -40°C 101 m) 25°C A D(li 8 ZthJ I 85°C 6 100 150°C D=0.5 D=0.2 4 D=0.1 10-1 D=0.05 D=0.02 D=0.01 2 D=0 00 0.5 1 1.5 2 2.5 3 ms 4 10-210-610-510-410-310-210-1100 101 102 s 104 t t P 11 Determination of I 12 Typ. transient thermal impedance D(lim) I = f(t); t = 200µs Z =f(t ) @ 6 cm2 cooling area D(lim) m thJA p Parameter: T Parameter: D=t /T ; both channels on Jstart p 12 103 K/W A 102 m) -40°C A ID(li 8 25°C ZthJ 101 85°C 6 D=0.5 100 D=0.2 D=0.1 4 D=0.05 150°C D=0.02 10-1 D=0.01 2 D=0 0 10-2 0 0.1 0.2 0.3 0.4 ms 0.55 10-5 10-4 10-3 10-2 10-1 100 101 102 s 104 t t P Datasheet 9 Rev. 1.3, 2007-11-06

Smart Low Side Power Switch HITFET BTS 3410G Package Outlines 1 Package Outlines 0.35 x 45˚ 1) 07 X. 4-0.2 0. A 6 ± M 0 75 45) 5 C +0. 1 . 7 9 0. (1 1. 0.1 X. A M 1.27 B 8 0.1 0.64±0.25 +0.1 2) 0.41 -0.06 6±0.2 0.2 M A B 8x 0.2 M C 8x 8 5 1 4 A 1) 5 -0.2 Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Lead width can be 0.61 max. in dambar area GPS01181 Figure 1 PG-DSO8-25 (Plastic Green Dual Small Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Dimensions in mm Datasheet 10 Rev. 1.3, 2007-11-06

Smart Low Side Power Switch HITFET BTS 3410G Revision History 2 Revision History Version Date Changes Rev. 1.3 2007-11-06 updated package drawing of green package Rev. 1.2 2007-06-18 released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green package naming Green explanation added Rev. 1.1 2004-03-05 released production version Datasheet 11 Rev. 1.3, 2007-11-06

Edition 2007-11-06 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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