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B D 1 7 6 / 1 BD176/178/180 7 8 / 1 Medium Power Linear and Switching 8 0 Applications • Complement to BD 175/177/179 respectively 1 TO-126 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V *Collector-Base Voltage : BD176 - 45 V CBO : BD178 - 60 V : BD180 - 80 V V Collector-Emitter Voltage : BD176 - 45 V CEO : BD178 - 60 V : BD180 - 80 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 3 A C I *Collector Current (Pulse) - 7 A C P Collector Dissipation (T =25°C) 30 W C C Rθja Junction to Ambient 70 °C/W Rθjc Junction to Case 8.5 °C/W T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) * Collector-Emitter Sustaining Voltage CEO : BD176 I = - 100mA, I = 0 - 45 V C B : BD178 - 60 V : BD180 - 80 V I Collector Cut-off Current : BD176 V = - 45V, I = 0 - 100 µA CBO CB E : BD178 V = - 60V, I = 0 - 100 µA CB E : BD180 V = - 80V, I = 0 - 100 µA CB E I Emitter Cut-off Current V = - 5V, I = 0 - 1 mA EBO EB C h * DC Current Gain V = - 2V, I = - 150mA 40 250 FE1 CE C h V = - 2V, I = - 1A 15 FE2 CE C V (sat) * Collector-Emitter Saturation Voltage I = -1 A , I = - 0.1A - 0.8 V CE C B V (on) * Base-Emitter On Voltage V = - 2V, I = -1 A - 1.3 V BE CE C f Current Gain Bandwidth Product V = -10V, I = - 250mA 3 MHz T CE C * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed h Classificntion FE Classification 6 10 16 h 40 ~ 100 63 ~ 160 100 ~ 250 FE1 * Classification 16: Only BD 176 ©2002 Fairchild Semiconductor Corporation Rev. B1, October 2002

B Typical Characteristics D 1 7 6 / 1 1000 GE -10 7 VCE = -2V OLTA IC = 10 IB 8/1 V GAIN 100 ATION -1 VBE(sat) 80 ENT ATUR R S UR V], VCE(sat) h, DC CFE 10 at), V(sat)[CE -0.1 V(sBE -0.01 1 -0.1 -1 -10 -0.01 -0.1 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 40 IC MAX. (Pulsed) 10µs CURRENT IC MAX. (Continuous) DC 1ms 100µs SIPATION 233505 OR -1 DIS 20 LECT WER 15 L O O P I[A], CC D176 D178 D180 P[W], C 105 -0.1 B B B 0 -1 -10 -100 0 25 50 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[oC], CASE TEMPERATURE Figure 3. Safe Operating Area Figure 4. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B1, October 2002

B Package Dimensions D 1 7 6 / 1 7 8 / 1 TO-126 8 0 0 1 ±0 0. 8.00 ±0.30 3.25 ±0.20 9 3. 0 2 0. AX ±0 ø3.20 ±0.10 20M 11.0 4. 1 (1.00) (0.50) 0.75 ±0.10 1.75 ±0.20 1.60 ±0.10 0 2 0.75 ±0.10 ±0.30 ±10 0. 6 6. 0 1 3. 1 #1 +0.10 2.28TYP 2.28TYP 0.50–0.05 [2.28±0.20] [2.28±0.20] Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, October 2002

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