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  • 型号: BCV26
  • 制造商: Fairchild Semiconductor
  • 库位|库存: xxxx|xxxx
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BCV26产品简介:

ICGOO电子元器件商城为您提供BCV26由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 BCV26价格参考¥0.41-¥0.41。Fairchild SemiconductorBCV26封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 PNP - 达林顿 30V 1.2A 220MHz 350mW 表面贴装 SOT-23-3。您可以下载BCV26参考资料、Datasheet数据手册功能说明书,资料中有BCV26 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRANS DARL PNP 30V 1.2A SOT-23达林顿晶体管 SOT23 PNP DARLINGTON

产品分类

晶体管(BJT) - 单路分离式半导体

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体管,达林顿晶体管,Fairchild Semiconductor BCV26-

数据手册

点击此处下载产品Datasheet

产品型号

BCV26

PCN封装

点击此处下载产品Datasheet

PCN组件/产地

点击此处下载产品Datasheet

PCN设计/规格

点击此处下载产品Datasheet

不同 Ib、Ic时的 Vce饱和值(最大值)

1V @ 100µA, 100mA

不同 Ic、Vce 时的DC电流增益(hFE)(最小值)

20000 @ 100mA,5V

产品目录页面

点击此处下载产品Datasheet

产品种类

达林顿晶体管

供应商器件封装

SOT-23

其它名称

BCV26FSCT

功率-最大值

350mW

包装

剪切带 (CT)

单位重量

60 mg

发射极-基极电压VEBO

10 V

商标

Fairchild Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-236-3,SC-59,SOT-23-3

封装/箱体

SOT-23

工厂包装数量

3000

晶体管极性

PNP

晶体管类型

PNP - 达林顿

最大工作温度

+ 150 C

最大直流电集电极电流

1.2 A

最大集电极截止电流

0.1 uA

最小工作温度

- 55 C

标准包装

1

电压-集射极击穿(最大值)

30V

电流-集电极(Ic)(最大值)

1.2A

电流-集电极截止(最大值)

-

直流集电极/BaseGainhfeMin

4000

系列

BCV26

配置

Single

集电极—发射极最大电压VCEO

30 V

集电极—基极电压VCBO

40 V

零件号别名

BCV26_NL

频率-跃迁

220MHz

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

B C V 2 6 BCV26 C E SOT-23 B Mark: FD PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO 3 V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 10 V EBO I Collector Current - Continuous 1.2 A C TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units *BCV26 P Total Device Dissipation 350 mW D Derate above 25°C 2.8 mW/°C RθJA Thermal Resistance, Junction to Ambient 357 °C/W * Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation

B PNP Darlington Transistor C (continued) V 2 6 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage I = 10 mA, I = 0 30 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 10 µA, I = 0 40 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 100 nA, I = 0 10 V (BR)EBO E C I Collector-Cutoff Current V = 30 V, I = 0 0.1 µA CBO CB E I Emitter-Cutoff Current V = 10 V, I = 0 0.1 µA EBO EB C ON CHARACTERISTICS h DC Current Gain I = 1.0 mA, V = 5.0 V 4,000 FE C CE I = 10 mA, V = 5.0 V 10,000 C CE I = 100 mA, V = 5.0 V 20,000 C CE VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 30 mA, VCE = 5.0 V, 220 MHz f = 100 MHz CC Collector Capacitance VCB = 30 V, IE = 0, f = 1.0 MHz 3.5 pF NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Typical Characteristics Typical Pulsed Current Gain Collector-Emitter Saturation AIN (K)50 vs Collector Current AGE (V)1.6 Voltage vs Collector Current T G V C E = 5V OLT β = 1000 N40 V RE R 1.2 R E LSED CU2300 125 °C OR EMITT0.8 - 40 °C 25 °C U 25 °C T 125 °C P C L E0.4 PICA10 - 40 °C COLL h - TYFE 00.01 I C - COLLECTO0R.1 CURRENT (A) 1 V - CESAT 00.001 I C - C0O.0L1LECTOR CURR0E.N1T (A) 1

B PNP Darlington Transistor C (continued) V 2 6 Typical Characteristics (continued) Base-Emitter Saturation Base Emitter ON Voltage vs Voltage vs Collector Current Collector Current V) E (V) 2 β = 1000 GE ( 2 G A OLTA1.6 - 40 °C VOLT1.6 - 40 °C V N ER 1.2 25 °C R O1.2 25 °C EMITT0.8 125 °C MITTE0.8 125 °C E E BAS0.4 ASE 0.4 V C E = 5V V - BESAT 00.001 I - C0O.0L1LECTOR CURR0E.N1T (A) 1 V - BBE(ON) 00.001 I - C0O.0L1LECTOR CURR0E.N1T (A) 1 C C Collector-Cutoff Current Input and Output Capacitance vs Ambient Temperature vs Reverse Bias Voltage A) 100 16 T (n V C B = 15V f = 1.0 MHz N RE 10 pF)12 UR E ( 3 C C OR 1 TAN 8 CT CI LE PA Cib OL 0.1 CA 4 C I - CBO0.01 0 Cob 25 50 75 100 125 0.1 1 10 100 T A - AMBIENT TEMPERATURE ( ° C) REVERSE VOLTAGE (V) Power Dissipation vs Ambient Temperature 350 W) m300 N ( O250 ATI SOT-23 SIP200 S DI150 R E W100 O P P - D 50 0 0 25 50 75 100 125 150 TEMPERATURE ( o C)

SOT-23 Tape and Reel Data SOT-23 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-23parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. Antistatic Cover Tape These reeled parts in standard option are shipped with 3,000 units per 7" or 177cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (anti- static coated). Other option comes in 10,000 units per 13" or 330cm diameter reel. This and some other options are described in the Packaging Information table. These full reels are individually labeled and placed inside a standard intermediate made of recyclable corrugated brown paper with a Fairchild logo printing. One pizza box contains eight reels maximum. And these intermediate boxes are placed inside a labeled shipping box which comes in different sizes depending on the number of parts Human Readable Embossed shipped. Label Carrier Tape 3P 3P 3P 3P SOT-23 Packaging Information Packaging Option (noS ftlaonwd acrodde) D87Z SOT-23 Unit Or ientation Packaging type TNR TNR Qty per Reel/Tube/Bag 3,000 10,000 Reel Size 7" Dia 13" Box Dimension (mm) 187x107x183 343x343x64 343mm x 342mm x 64mm Human Readable Label Max qty per Box 24,000 30,000 Intermediate box for L87Z Option Weight per unit (gm) 0.0082 0.0082 Weight per Reel (kg) 0.1175 0.4006 Note/Comments Human Readable Label sample Human readable Label 187mm x 107mm x 183mm SOT-23 Tape Leader and Trailer Intermediate Box for Standard Option Configuration: Figure 2.0 Carrier Tape Components Cover Tape Trailer Tape Leader Tape 300mm minimum or 500mm minimum or 75 empty pockets 125 empty pockets ©2000 Fairchild Semiconductor International September 1999, Rev. C

SOT-23 Tape and Reel Data, continued SOT-23 Embossed Carrier Tape Configuration: Figure 3.0 P0 P2 D0 D1 T E1 F W E2 B0 Wc Tc P1 A0 K0 User Direction of Feed Dimensions are in millimeter Pkg type A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc SOT-23 3.15 2.77 8.0 1.55 1.125 1.75 6.25 3.50 4.0 4.0 1.30 0.228 5.2 0.06 (8mm) +/-0.10 +/-0.10 +/-0.3 +/-0.05 +/-0.125 +/-0.10 min +/-0.05 +/-0.1 +/-0.1 +/-0.10 +/-0.013 +/-0.3 +/-0.02 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). 0.5mm 20 deg maximum maximum Typical component cavity 0.5mm B0 center line maximum 20 deg maximum component rotation Typical Sketch A (Side or Front Sectional View) component Sketch C (Top View) Component Rotation A0 center line Component lateral movement Sketch B (Top View) SOT-23 Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A See detail AA max Dim N 7" Diameter Option B Min Dim C See detail AA Dim D W3 min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Reel Tape Size Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) Option 8mm 7" Dia 71.7070.8 01..0559 51132 + +00.5.0/-200.2/-0.008 02.07.925 25.5165 08..343 +11 +.50/0.059/-0.000 01.45.647 07..391 –1 1 –0 0.9.429 8mm 13" Dia 1333.000 01..0559 51132 + +00.5.0/-200.2/-0.008 02.07.925 41.0000 08..343 +11 +.50/0.059/-0.000 01.45.647 07..391 –1 1 –0 0.9.429 September 1999, Rev. C

SOT-23 Package Dimensions SOT-23 (FS PKG Code 49) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0082 ©2000 Fairchild Semiconductor International September 1998, Rev. A1

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FASTr™ PowerTrench SyncFET™ Bottomless™ GlobalOptoisolator™ QFET™ TinyLogic™ CoolFET™ GTO™ QS™ UHC™ CROSSVOLT™ HiSeC™ QT Optoelectronics™ VCX™ DOME™ ISOPLANAR™ Quiet Series™ E2CMOSTM MICROWIRE™ SILENT SWITCHER EnSignaTM OPTOLOGIC™ SMART START™ FACT™ OPTOPLANAR™ SuperSOT™-3 FACT Quiet Series™ PACMAN™ SuperSOT™-6 FAST POP™ SuperSOT™-8 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

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