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B C 8 1 November 2014 7 / B C 8 1 8 BC817 / BC818 — N NPN Epitaxial Silicon Transistor P N E p i t a x Features i 3 a l • Switching and Amplifier Applications S i • Suitable for AF-Driver Stages and Low Power Output Stages li 2 c • Complement to BC807 / BC808 o n 1 SOT-23 T 1. Base 2. Emitter 3. Collector r a n s i Ordering Information(1) s t o r Part Number Marking Package Packing Method BC81716MTF 8FA SOT-23 3L Tape and Reel BC81725MTF 8FB SOT-23 3L Tape and Reel BC81740MTF 8FC SOT-23 3L Tape and Reel BC81816MTF 8GA SOT-23 3L Tape and Reel BC81825MTF 8GB SOT-23 3L Tape and Reel BC81840MTF 8GC SOT-23 3L Tape and Reel Note: 1. Affix “-16,-25,-40” means h classification. Affix “-M” means the matte type package. Affix “-TF” means the tape and FE reel type packing. Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A Symbol Parameter Value Unit BC817 50 V Collector-Base Voltage V CBO BC818 30 BC817 45 V Collector-Emitter Voltage V CEO BC818 25 V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 800 mA C T Junction Temperature 150 °C J T Storage Temperature -65 to +150 °C STG © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC817 / BC818 Rev. 1.1.0 1

B C Thermal Characteristics(1) 8 1 7 Values are at T = 25°C unless otherwise noted. A / B Symbol Parameter Value Unit C 8 Power Dissipation 310 mW 1 PD Derate Above 25°C 2.48 mW/°C 8 — RθJA Thermal Resistance, Junction-to-Ambient 403 °C/W N P Note: N 1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. E p i t a x i Electrical Characteristics(2) a l S Values are at T = 25°C unless otherwise noted. i A l i c Symbol Parameter Conditions Min. Typ. Max. Unit o n Collector-Emitter Breakdown BC817 45 T BV I = 10 mA, I = 0 V r CEO Voltage BC818 C B 25 a n s Collector-Emitter Breakdown BC817 50 i BV I = 0.1 mA, V = 0 V s CES Voltage BC818 C BE 30 to r BV Emitter-Base Breakdown Voltage I = 0.1 mA, I = 0 5 V EBO E C I Collector Cut-Off Current V = 25 V, V = 0 100 nA CES CE BE I Emitter Cut-Off Current V = 4 V, I = 0 100 nA EBO EB C h V = 1 V, I = 100 mA 100 630 FE1 CE C DC Current Gain h V = 1 V, I = 300 mA 60 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 500 mA, I = 50 mA 0.7 V CE C B V (on) Base-Emitter On Voltage V = 1 V, I = 300 mA 1.2 V BE CE C V = 5 V, I = 10 mA, f Current Gain Bandwidth Product CE C 100 MHz T f = 50 MHz C Output Capacitance V = 10 V, f = 1 MHz 12 pF ob CB Note: 2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2% h Classification FE Classification 16 25 40 h 100 ~ 250 160 ~ 400 250 ~ 630 FE1 h 60 ~ 100 ~ 170 ~ FE2 © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC817 / BC818 Rev. 1.1.0 2

B C Typical Performance Characteristics 8 1 7 / B C 600 1.0 8 BC81725MTF V = 1V 1 500 Vce=1V e,[V] 0.9 CE 8 — g Gain400 Volta 0.8 75oC 125oC N e, Current 300 Emitter On 00..67 25oC PN Ep hf120000 -25oC 25oC 75oC 125oC Vbe(on), Base- 00..45 itaxial S 0 0.3 i 1 10 100 1000 1 10 100 li c Collector Current, [mA] Collector Current, [mA] o n Figure 1. DC Current Gain Figure 2. Base-Emitter On Voltage T r a n s i s 1.2 t Ic=10Ib Ic=10Ib o 0.4 r Saturation Voltage,[V] 00..23 -25oC 25oC75oC125oC Saturation Voltage,[V] 001...680 -25oC 25oC 125oC Vce(sat), 0.1 Vbe(sat), 0.4 75oC 0.0 10 100 1000 10 100 1000 Collector Current, [mA] Collector Current, [mA] Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 0.4 W) 0.3 n ( o ati p si s 0.2 Di er w o P P - D 0.1 0.0 0 25 50 75 100 125 150 Temperature, [ OC] Figure 5. Power Dissipation vs Ambient Temperature © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC817 / BC818 Rev. 1.1.0 3

B C Physical Dimensions 8 1 7 / B C 8 1 0.95 8 2.92±0.20 — 3 N P 1.40 N E p 1.30+0.20 2.20 it -0.15 a x i a l S 1 2 il i (0.29) 0.60 co 0.37 0.95 n 0.20 A B 1.00 T 1.90 1.90 r a n LAND PATTERN s RECOMMENDATION is t o r 1.20 MAX SEE DETAIL A (0.93) 0.10 0.00 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. 0.23 B) ALL DIMENSIONS ARE IN MILLIMETERS. 0.08 C) DIMENSIONS ARE INCLUSIVE OF BURRS, 0.25 MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. 0.20 MIN SEATING E) DRAWING FILE NAME: MA03DREV10 (0.55) PLANE SCALE: 2X Figure 6. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC817 / BC818 Rev. 1.1.0 4

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AccuPower(cid:165) F-PFS(cid:165) OPTOPLANAR® Awinda® FRFET® ®* AX-CAP®* Global Power ResourceSM ® TinyBoost® BitSiC(cid:165) GreenBridge(cid:165) PowerTrench® TinyBuck® Build it Now(cid:165) Green FPS(cid:165) PowerXS™ TinyCalc(cid:165) CorePLUS(cid:165) Green FPS(cid:165) e-Series(cid:165) Programmable Active Droop(cid:165) TinyLogic® CorePOWER(cid:165) Gmax(cid:165) QFET® TINYOPTO(cid:165) CROSSVOLT(cid:165) GTO(cid:165) QS(cid:165) TinyPower(cid:165) CTL(cid:165) IntelliMAX(cid:165) Quiet Series(cid:165) TinyPWM(cid:165) Current Transfer Logic(cid:165) ISOPLANAR(cid:165) RapidConfigure(cid:165) TinyWire(cid:165) DEUXPEED® Making Small Speakers Sound Louder (cid:165) TranSiC(cid:165) Dual Cool™ and Better™ TriFault Detect(cid:165) EcoSPARK® MegaBuck(cid:165) Saving our world, 1mW/W/kW at a time™ TRUECURRENT®* EfficientMax(cid:165) MICROCOUPLER(cid:165) SignalWise(cid:165) μSerDes(cid:165) ESBC(cid:165) MicroFET(cid:165) SmartMax(cid:165) ® MicroPak(cid:165) SMART START(cid:165) Fairchild® MicroPak2(cid:165) SSoPlMut®ions for Your Success(cid:165) UHC® Fairchild Semiconductor® MillerDrive(cid:165) STEALTH(cid:165) Ultra FRFET(cid:165) FFFFFAEAAasCTCStBTvTTC®e® Qnocurehie(cid:165)(cid:165)t Series(cid:165) MMMMMmTToVWotixNt®iiS®oo®nnaGMveraird®x®(cid:165) SSSSSuuuuupppppeereeerrrrSFMSSOEOOOTTTTS(cid:165)®(cid:165)(cid:165)®-3--68 XUVVVXsCioSnseli™XutFnaa(cid:165)Esg l™MTe(cid:165)Palxu(cid:165)s(cid:165) FPS(cid:165) SyncFET(cid:165) OOpPtToOHLiTO(cid:165)GIC® Sync-Lock™ (cid:3037)(cid:10106)™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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