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  • 型号: APT2X100D20J
  • 制造商: American Microsemiconductor, Inc.
  • 库位|库存: xxxx|xxxx
  • 要求:
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APT2X100D20J产品简介:

ICGOO电子元器件商城为您提供APT2X100D20J由American Microsemiconductor, Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 APT2X100D20J价格参考。American Microsemiconductor, Inc.APT2X100D20J封装/规格:二极管 - 整流器 - 阵列, Diode Array 2 Independent Standard 200V 100A Chassis Mount SOT-227-4, miniBLOC。您可以下载APT2X100D20J参考资料、Datasheet数据手册功能说明书,资料中有APT2X100D20J 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE DUAL 100A 200V SOT-227

产品分类

二极管,整流器 - 模块

品牌

Microsemi Power Products Group

数据手册

http://www.microsemi.com/document-portal/doc_download/123798-apt2x101-100d20j-d-pdfhttp://www2.microsemi.com/document-portal/doc_download/14813-power-products-group-ppg-catalog

产品图片

产品型号

APT2X100D20J

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

不同If时的电压-正向(Vf)

1.1V @ 100A

不同 Vr时的电流-反向漏电流

500µA @ 200V

二极管类型

标准

二极管配置

2 个独立式

产品目录绘图

产品目录页面

点击此处下载产品Datasheet

供应商器件封装

ISOTOP®

其它名称

APT2X100D20JMI
APT2X100D20JMI-ND

包装

管件

反向恢复时间(trr)

60ns

安装类型

底座安装

封装/外壳

SOT-227-4,miniBLOC

标准包装

10

热阻

*

电压-DC反向(Vr)(最大值)

200V

电流-平均整流(Io)(每二极管)

100A

速度

快速恢复 =< 500 ns,> 200mA(Io)

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PDF Datasheet 数据手册内容提取

2 3 2 3 flMicrosemi. 2 3 7 2 2 � POWER PRODUCTS GROUP - 1 4 T 1 4 1 4 O S Anti-Parallel Parallel APT2X101D20J 200V 100A APT2X100D20J APT2X101D20J APT2X100D20J 200V 100A "UL Recognized" ISOTOP® file # E145592 DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses -Switchmode Power Supply -Inverters • Soft Recovery Characteristics • Low Noise Switching • Free Wheeling Diode • Popular SOT-227 Package • Cooler Operation -Motor Controllers -Converters • Low Forward Voltage • Higher Reliability Systems • Snubber Diode • Uninterruptible Power Supply (UPS) • High Blocking Voltage • Increased System Power • Induction Heating Density • High Speed Rectifi ers • Low Leakage Current MAXIMUM RATINGS All Ratings: T = 25°C unless otherwise specifi ed. C Symbol Characteristic / Test Conditions APT2X101_100D20J UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 200 Volts RRM V Maximum Working Peak Reverse Voltage RWM I (AV) Maximum Average Forward Current (T = 120°C, Duty Cycle = 0.5) 100 F C I (RMS) RMS Forward Current (Square wave, 50% duty) 171 Amps F I Non-Repetitive Forward Surge Current (T = 45°C, 8.3ms) 1000 FSM J T ,T Operating and StorageTemperature Range -55 to 175 °C J STG STATIC ELECTRICAL CHARACTERISTICS Symbol MIN TYP MAX UNIT I = 100A 1.1 1.3 F VF Forward Voltage I F = 200A 1.4 Volts I = 100A, T = 125°C 0.9 F J V = V Rated 500 R R I Maximum Reverse Leakage Current μA 0 RM V = V Rated, T = 125°C 1000 02 R R J 2 5- CT Junction Capacitance, VR = 200V 400 pF v E e R 5 0 0 2 Microsemi Website - http://www.microsemi.com 3- 5 0

DYNAMIC CHARACTERISTICS APT2X101_100D20J Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C - 39 ns trr Reverse Recovery Time - 60 I = 100A, di /dt = -200A/μs Qrr Reverse Recovery Charge F V = 133VF, T = 25°C - 200 nC R C I Maximum Reverse Recovery Current - 6 - Amps RRM trr Reverse Recovery Time - 110 ns I = 100A, di /dt = -200A/μs Qrr Reverse Recovery Charge F F - 840 nC V = 133V, T = 125°C R C IRRM Maximum Reverse Recovery Current - 15 - Amps trr Reverse Recovery Time - 80 ns I = 100A, di /dt = -1000A/μs Qrr Reverse Recovery Charge F V = 133VF, T = 125°C - 1910 nC R C IRRM Maximum Reverse Recovery Current - 44 Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R Junction-to-Case Thermal Resistance .42 θJC °C/W R Junction-to-Ambient Thermal Resistance 20 θJA 1.03 oz W Package Weight T 29.2 g 10 lb•in Torque Maximum Terminal & Mounting Torque 1.1 N•m Microsemi Reserves the right to change, without notice, the specifi cations and information contained herein. C/W) 00..4405 � 0II .9 1I1 I 11 I J.I .H11+ -- -�I -- 11 I III I I I NCE (° 00..3305 01.II 7 T11 I I I - I ---1l,./ --t 1 ,11 =I1 1H111 : �:;::::::::11v,..".-I ._ ...,,' I I A 1 �1�-- PED 0.25 0.5 T11 1 I I1 -+I ---rI r //f1�/1� II L IM 0.20 I ' i' I J� /A Note:IR_J Z, THERMAθJC 000...1010055 I'------- -0 00.l0..IIII 135 liIII I II I1 1III _1I _ c.:.---_-L �i-k1 S �1INI 1_Grr1' 1LJ11EI 1�1 �P U LSEI I IP PDMeI akD11 Tu1It1Jy =Ft- a1PcDtoM rt 2ID x- =ZθI JItC1 /It +2 TI C II I 10-5 10-4 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 0 2 0 2 5- E v e R 5 0 0 2 3- 5 0

TYPICAL PERFORMANCE CURVES APT2X101_100D20J 300 120 130A TJ=125°C 250 ME 100 100A VR=5103A3V ENT Y TI RR 200 ER 80 CU OV WARD (A) 150 SE REC(ns) 60 R T = -55°C R O 100 J E 40 F V I, F 50 T = T1J5 0=° C125°C TJ = 25°C t, RErr 20 J 0 0 0 0.5 1 1.5 2 0 200 400 600 800 1000 1200 V , ANODE-TO-CATHODE VOLTAGE (V) -di /dt, CURRENT RATE OF CHANGE(A/μs) F F Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change 2000 50 RGE TVJR==112353°VC1 30A RENT TVJR==112353°VC 130A A 100A R 40 CH 1500 CU Y Y R R VE VE 30 RECO(nC) 1000 RECO(A) 100A E 50A E 20 S S R R E E EV 500 EV 50A R R 10 Q, rr , RM R I 0 0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 -diF/dt, CURRENT RATE OF CHANGE (A/μs) -diF/dt, CURRENT RATE OF CHANGE (A/μs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change 1.2 200 Q Duty cycle = 0.5 trr rr 180 TJ=150°C S 1.0 160 ERs) I YNAMIC PARAMETormalized to 800A/μ 000...864 trr RRM (A) IF(AV) 1114208600000 K, Df(N Qrr 40 0.2 20 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 T, JUNCTION TEMPERATURE (°C) Case Temperature (°C) J Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature 4000 3500 E C N 3000 A T CI A 2500 P ON CA(pF) 2000 NCTI 1500 20 U 0 C, JJ 1050000 E 5-2 v e 0 R .3 1 10 100 200 5 Figure 8. JuVnRc,t iRoEnV CEaRpSaEci tVaOnLcTeA vGsE. R (Vev) erse Voltage 3-200 5 0

APT2X101_100D20J Vr --n n IJ> +18V diF/dt Adjust APT20M20LFLL Lo _J L__J 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit e 1 I - Forward Conduction Current F e 1 4 2 di /dt - Rate of Diode Current Change Through Zero Crossing. F e Zero 3 I - Maximum Reverse Recovery Current. RRM e 5 0.25 IRRM 4 trr - Reverse Recovery Time, measured from zero crossing where diode 3 current goes from positive to negative, to the point at which the straight 2 line through I and 0.25 I passes through zero. RRM RRM 5 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 Package Outline 11.8 (.463) 31.5 (1.240) 12.2 (.480) 31.7 (1.248) 8.9 (.350) 7.8 (.307) W=4.1 (.161) 9.6 (.378) 8.2 (.322) W=4.3 (.169) Hex Nut M4 H100 H=4.8 (.187) (4 places ) H=4.9 (.193) (4 places) r =(2 4 p.0la (c.1e5s)7 ) _ t4.0 (.157) 0.75 (.030) 12.6 (.496) 2255..24 ((01..909020)) - t4.2 (.165) 0.85 (.033) 12.8 (.504) (2 places) --- l �I 1- -11- - - -- 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) -- -�11 334500....9113 ((((..1155..89117489))53)) - Anode 2 APATn2tiX-p1a0ra0llDel20CJa thode 1 Cathode 1A PT2PXar1a0ll1elD20JAnode 1 0 202 3388..02 ((11..459064)) E 5- �0 �0 v Dimensions in Millimeters and (Inches) Cathode 2 Anode 1 Cathode 2 Anode 2 e R 5 0 0 2 3- 5 0