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  • 型号: MBRB2545CTG
  • 制造商: ON Semiconductor
  • 库位|库存: xxxx|xxxx
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MBRB2545CTG产品简介:

ICGOO电子元器件商城为您提供MBRB2545CTG由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MBRB2545CTG价格参考¥3.70-¥5.46。ON SemiconductorMBRB2545CTG封装/规格:二极管 - 整流器 - 阵列, Diode Array 1 Pair Common Cathode Schottky 45V 15A Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB。您可以下载MBRB2545CTG参考资料、Datasheet数据手册功能说明书,资料中有MBRB2545CTG 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SCHOTTKY 45V 15A D2PAK肖特基二极管与整流器 30A 45V

产品分类

二极管,整流器 - 阵列分离式半导体

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,肖特基二极管与整流器,ON Semiconductor MBRB2545CTGSWITCHMODE™

数据手册

点击此处下载产品Datasheet

产品型号

MBRB2545CTG

不同If时的电压-正向(Vf)

820mV @ 30A

不同 Vr时的电流-反向漏电流

200µA @ 45V

二极管类型

肖特基

二极管配置

1 对共阴极

产品

Schottky Diodes

产品目录页面

点击此处下载产品Datasheet

产品种类

肖特基二极管与整流器

供应商器件封装

D2PAK

其它名称

MBRB2545CTG-ND
MBRB2545CTGOS

包装

管件

反向恢复时间(trr)

-

商标

ON Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

封装

Tube

封装/外壳

TO-263-3,D²Pak(2 引线+接片),TO-263AB

封装/箱体

D2PAK

峰值反向电压

45 V

工作温度范围

- 65 C to + 175 C

工厂包装数量

50

技术

Silicon

最大反向漏泄电流

200 uA

最大工作温度

+ 175 C

最大浪涌电流

150 A

最小工作温度

- 65 C

标准包装

50

正向电压下降

0.82 V

正向连续电流

30 A

热阻

1.5°C/W Jc

电压-DC反向(Vr)(最大值)

45V

电流-平均整流(Io)(每二极管)

15A

系列

MBRB2545CT

速度

快速恢复 =< 500 ns,> 200mA(Io)

配置

Dual Common Cathode

零件号别名

MBRB2545CTT4G

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PDF Datasheet 数据手册内容提取

MBRB2545CTG, SBRB2545CTG SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package http://onsemi.com The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. SCHOTTKY BARRIER Features RECTIFIER • Center−Tap Configuration 30 AMPERES, 45 VOLTS • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • Epoxy Meets UL 94 V−0 @ 0.125 in • Short Heat Sink Tab Manufactured − Not Sheared • Similar in Size to the Industry Standard TO−220 Package D2PAK • CASE 418B AEC−Q101 Qualified and PPAP Capable STYLE 3 • SBRB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 1 • All Packages are Pb−Free* 4 3 Mechanical Characteristics • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 MARKING DIAGRAM • Weight: 1.7 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable AY WW • Lead and Mounting Surface Temperature for Soldering Purposes: B2545G 260°C Max. for 10 Seconds AKA • Device Meets MSL1 Requirements • ESD Ratings: ♦ Machine Model = C (> 400 V) A = Assembly Location ♦ Human Body Model = 3B (> 8000 V) Y = Year WW = Work Week B2545 = Device Code G = Pb−Free Package AKA = Diode Polarity ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: November, 2013 − Rev. 12 MBRB2545CT/D

MBRB2545CTG, SBRB2545CTG MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 45 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) 15 A (Rated VR, TC = 164°C) Total Device 30 Peak Repetitive Forward Current IFRM A (Rated VR, Square Wave, 20 kHz, TC = 160°C) 30 Non−Repetitive Peak Surge Current IFSM A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 150 Peak Repetitive Reverse Surge Current (2.0 (cid:2)s, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/(cid:2)s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R(cid:3)JA. THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Thermal Resistance, °C/W Junction−to−Case R(cid:3)JC 1.5 Junction−to−Ambient (Note 2) R(cid:3)JA 50 2. When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS (Per Diode) Symbol Characteristic Condition Min Typ Max Unit VF Instantaneous Forward Voltage IF = 15 Amp, TJ = 25°C − − 0.62 V (Note 3) IF = 15 Amp, TJ = 125°C − 0.50 0.57 IF = 30 Amp, TJ = 25°C − − 0.82 IF = 30 Amp, TJ = 125°C − 0.65 0.72 IR Instantaneous Reverse Current VR = 45 Volts, TJ = 25°C − − 0.2 mA (Note 3) VR = 45 Volts, TJ = 125°C − 9.0 25 3. Pulse Test: Pulse Width = 300 (cid:2)s, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device Package Shipping† MBRB2545CTG D2PAK 50 Units / Rail (Pb−Free) SBRB2545CTG D2PAK 50 Units / Rail (Pb−Free) MBRB2545CTT4G D2PAK 800 Units / Tape & Reel (Pb−Free) SBRB2545CTT4G D2PAK 800 Units / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2

MBRB2545CTG, SBRB2545CTG S)1000 200 P M 100 A RENT ( 100 mA) 124000 TJ = 150°C CUR NT ( 4.0 125°C ORWARD 10 TJ = 125°C E CURRE 012...400 100°C OUS F 150°C EVERS 00..21 75°C NTANE 1.0 25°C I, RR 000...000421 25°C A T S 0.004 , INF 0.10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0020 10 20 30 40 50 I VF(cid:2), INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg S) T T WA 32 A) 26 N ( SQUARE WAVE T ( 24 DC TIO 28 TJ = 125°C EN 22 DISSIPA 24 (RESISTIVE LOAD) IIPAVK = (cid:4) DC CURR 2108 SQUARE OWER 20 (CAPACITIVE 5 WARD 1164 P 16 LOADS) D 10 R 12 R O E FORWA 182 IIPAVK= 20 RAGE F 1086 RAG 4 AVE 4 , AVEV) 00 4 8 12 16 20 24 28 32 36 40 , F(AV) 20145 150 155 160 165 170 175 A I PF( IF, AVERAGE FORWARD CURRENT (AMPS) TC, CASE TEMPERATURE (°C) Figure 3. Typical Forward Power Dissipation Figure 4. Current Derating, Case per Leg http://onsemi.com 3

MBRB2545CTG, SBRB2545CTG PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: C 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. E 2. CONTROLLING DIMENSION: INCH. V 3. 418B−01 THRU 418B−03 OBSOLETE, −B− NEW STANDARD 418B−04. W 4 INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 A C 0.160 0.190 4.06 4.83 S D 0.020 0.035 0.51 0.89 1 2 3 E 0.045 0.055 1.14 1.40 F 0.310 0.350 7.87 8.89 G 0.100 BSC 2.54 BSC −T− H 0.080 0.110 2.03 2.79 K J 0.018 0.025 0.46 0.64 SEATING W PLANE G J KL 00..009502 00..011702 21..2392 21..7893 M 0.280 0.320 7.11 8.13 H N 0.197 REF 5.00 REF D3 PL P 0.079 REF 2.00 REF 0.13 (0.005) M T B M R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40 VARIABLE STYLE 3: CONFIGURATION PIN 1.ANODE ZONE N P 2.CATHODE R 3.ANODE U 4.CATHODE L L L M M M F F F VIEW W−W VIEW W−W VIEW W−W 1 2 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 4

MBRB2545CTG, SBRB2545CTG ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MBRB2545CT/D 5

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MBRB2545CTG MBRB2545CTT4G SBRB2545CTG