UPS340 3 A LOW Vf Schottky Barrier Rectifier DESCRIPTION KEY FEATURES In Microsemi(cid:146)s new Powermite3fi SMT In addition to its size advantages, ! High power surface mount W W package, these high efficiency ultrafast Powermite3fi package features include a full package. W rectifiers offer the power handing metallic bottom that eliminates the ! Guard Ring die construction for . transient protection. M capabilities previously found only in possibility of solder flux entrapment during much larger packages. They are ideal assembly, and a unique locking tab acts as ! Silicon Schottky rectifiers no ic reverse voltage recovery. r for SMD applications that operate at an integral heat sink. Its innovative design o ! Internal heat sink locking tabs s high frequencies. makes this device ideal for use with ! Low forward voltage. e m automatic insertion equipment. ! Full metallic bottom eliminates flux entrapment i .C IMPORTANT: For the most current data, consult MICROSEMI(cid:146)s website: http://www.microsemi.com ! Compatible with automatic O insertion equipment M ABSOLUTE MAXIMUM RATINGS AT 25º C ! Low profile-maximum height of 1mm supplied in 16 mm tape (UNLESS OTHERWISE SPECIFIED) reel- 5000 units/ 13” reel. Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage V 40 V RWM DC Blocking Voltage V APPLICATIONS/BENEFITS R RMS Reverse Voltage V 28 V ! Switching and Regulating Power R (RMS) Supplies. Average Rectified Output Current I 3 A o ! Charge Pump Circuits. Non-Repetitive Peak Forward Surge Current ! Reduces reverse recovery loss 8.3ms Single half sine wave Superimposed IFSM 50 A due to low IRM. on Rated Load @ T =100 ºC c ! Small foot print Storage Temperature T stg -55 to +150 ºC 190 X 300 mils Operating Temperature T op -55 to +125 ºC 1:1 Actual size THERMAL CHARACTERISTICS (UNLESS OTHERWISE SPECIFIED) Thermal Resistance Junction-to Bottom Rja (1) 2.5 ºC/Watt (1) When Mounted on PC board with 2 ounce copper pattern. UU PP SS 33 44 00 Copyright  2003 Microsemi Page 1 Rev. 0., 2003-02-12

UPS340 3 A LOW Vf Schottky Barrier Rectifier ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified) Parameter Symbol Conditions Min Typ. Max Units W W W Forward Voltage (Note 1) I = 3 A , T =25 ºC 0.46 0.50 F j . I = 3 A , T =125 ºC 0.40 0.44 M V F j V Fm IF = 6 A , Tj =25 ºC 0.57 0.61 ic IF = 6 A , Tj =125 ºC 0.54 0.58 ro Reverse Break Down Voltage s e (Note 1) VBR IR = 0.5 mA 40 V m Reverse Current (Note1) VR = 40V, Tj = 25 ºC 15 500 uA i .C I V = 40V, T =100 ºC 10 20 mA O rm R j M Capacitance C V = 4 V; F = 1 MH 180 pF T R Z Note: 1 Short duration test pulse used to minimize self (cid:150) heating effect. EE LL EE CC TT RR II CC AA LL SS Copyright  2003 Microsemi Page 2 Rev. 0., 2003-02-12

UPS340 3 A LOW Vf Schottky Barrier Rectifier W W W . M ic r o s e m i . C O M Notes: 1. TA = TSOLDERING POINT, RΘJS = 3.4” C/W RΘsa = 0” C/W. 2. Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode pad dimensions .075" x 1.0", anode pad dimensions 0.25" x 1.0". R in range of ΘJA 20-40(cid:176) C/W. 3. Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout R in range of 95 - 115(cid:176) C/W. ΘJA Copyright  2003 Microsemi Page 3 Rev. 0., 2003-02-12

UPS340 3 A LOW Vf Schottky Barrier Rectifier 16 mm TAPE W W W . M ic r o s e m i . C O M 13 INCH REEL PRODUCT PRELIMINARY DATA (cid:150) Information contained in this document is pre-production data, and is proprietary to Microsemi Corp. It may not be modified in any way without the express written consent of Microsemi Corp. Product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time. Copyright  2003 Microsemi Page 4 Rev. 0., 2003-02-12

UPS340 3 A LOW Vf Schottky Barrier Rectifier W W W . M ic r o s e m i . C O M MM EE CC HH AA NN II CC AA LL Copyright  2003 Microsemi Page 5 Rev. 0., 2003-02-12

UPS340 3 A LOW Vf Schottky Barrier Rectifier NOTES: W W W . M ic r o s e m i . C O M NN OO TT EE SS Copyright  2003 Microsemi Page 6 Rev. 0., 2003-02-12

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