BIPOLAR ANALOG INTEGRATED CIRCUIT PC2745TB,PC2746TB 3 V, SUPER MINIMOLD SILICON MMIC T WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS U DESCRIPTION The PC2745TB and PC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile communications. These low current amplifiers operate on 3.0 V (1.8 V MIN.). These ICs are manufactured using our 20 GHz fT NESATIII silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip sOurface from external pollution and prevent corrosion/migration. Thus, these IC have excellent performance, uniformity and reliability. FEATURES • Supply voltage : Recommended VCC = 2.7 to 3.3 V Circuit operation VCC = 1.8 to -3.3 V • Upper limit operating frequency : PC2745TB; fu = 2.7 GHz TYP.@3 dB bandwidth PC2746TB; fu = 1.5 GHEz TYP.@3 dB bandwidth • High isolation : PC2745TB; ISL = 38 dB TYP.@f = 500 MHz PC2746TB; ISL = 45 dB TYP.@f = 500 MHz • Power gain : PC2745TB; GP = 12 dB TYP.@f = 500 MHz PC2746TB; GP = 19 dB TYP.@f = 500 MHz S • Saturated output power : PC2745TB; PO(sat) = 1 dBm TYP.@f = 500 MHz PC2746TB; PO(sat) = 0 dBm TYP.@f = 500 MHz • High-density surface mounting : 6-pin super minimold package (2.0  1.25  0.9 mm) A APPLICATIONS • 1.5 GHz to 2.5 GHz communication system : PC2745TB • 800 MHz to 900 MHz communication system : PC2746TB ORDERING INFORMATION H Part Number Package Marking Supplying Form PC2745TB-E3-A 6-pin super minimold C1Q • Embossed tape 8 mm wide • 1, 2, 3 pins face the perforation side of the tape P PC2746TB-E3-A C1R • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: PC2745TB-A, PC2746TB-A Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PU10443EJ01V0DS (1st edition) The mark  shows major revised points. (Previous No. P11511EJ3V0DS00) Date Published November 2003 CP(K)

PC2745TB,PC2746TB PIN CONNECTION Pin No. Pin Name 1 INPUT 2 GTND 3 GND 4 OUTPUT 5 GND U Marking is an example of PC2745TB 6 VCC PRODUCT LINE-UP (TA = +25C, VCC = 3.0 V, ZS = ZL = 50 ) fu PO(sat) GP NF ICC Part No. OPackage Making (GHz) (dBm) (dB) (dB) (mA) PC2745T 2.7 1.0 12 6.0 7.5 6-pin minimold C1Q PC2745TB 6-pin super minimold PC2746T 1.5 0 19 4.0 7.5 6-pin minimold C1R PC2746TB -6-pin super minimold PC2747T 1.8 7.0 12 3.3 5.0 6-pin minimold C1S E PC2747TB 6-pin super minimold PC2748T 0.2 to 1.5 3.5 19 2.8 6.0 6-pin minimold C1T PC2748TB 6-pin super minimold PC2749T 2.9 6.0 16 4.0 6.0 6-pin minimold C1U S PC2749TB 6-pin super minimold Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. A Caution The package size distinguish between minimold and super minimold. SYSTEM APPLICATION EXAMPLE DIGITAL CELLULAR SYSTEM BLOCK DIAGRAM H P Data Sheet PU10443EJ1V0DS 2

PC2745TB,PC2746TB PIN EXPLANATION Applied Pin Pin Pin Name Voltage Voltage Function and Applications Internal Equivalent Circuit No. Note (V) (V) T 1 INPUT  0.87 Signal input pin. A internal matching circuit, configured with resistors, enables 50  connection over a wide band. this 0.82 pin must be coupled to signal source with U capacitor for DC cut. 2 GND 0  Ground pin. This pin should be connected 3 to system ground with minimum 5 inductance. Ground pattern on the board should be formed as wide as possible. All O the ground pins must be connected together with wide ground pattern to decrease impedance difference. 4 OUTPUT  1.95 Signal output pin. A internal matching circuit, configured with resistors,- enables 50  connection over a wide band. This 2.54 pin must be coupled to next stage with E capacitor for DC cut. 6 VCC 2.7 to  Power supply pin. This pin should be 3.3 externally equipped with bypass capacity to minimize ground impedance. S Note Pin voltage is measured at V = 3.0 V. Above: PC2745TB, Below: PC2746TB CC A H P 3 Data Sheet PU10443EJ1V0DS

PC2745TB,PC2746TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage VCC TA = +25C 4.0 V T Circuit Current ICC TA = +25C 16 mA Power Dissipation PD TA = +85C Note 270 mW Operating Ambient Temperature TA 40 to +85 C U Storage Temperature Tstg 55 to +150 C Input Power Pin TA = +25C 0 dBm Note Mounted on double-sided copper-clad 50  50  1.6 mm epoxy glass PWB O RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage VCC 2.7 3.0 3.3 V - ELECTRICAL CHARACTERISTICS E (TA = +25C, VCC = 3.0 V, ZS = ZL = 50 , unless otherwise specified) PC2745TB PC2746TB Parameter Symbol Test Conditions Unit MIN. TYP. MAX. MIN. TYP. MAX. S Circuit Current ICC No signal 5.0 7.5 10.0 5.0 7.5 10.0 mA Power Gain GP f = 500 MHz 9 12 14 16 19 21 dB Noise Figure NF f = 500 MHz  6.0 7.5  4.0 5.5 dB Upper Limit Operating Frequency fuA 3 dB down below 2.3 2.7  1.1 1.5  GHz from gain at f = 0.1 GHz Isolation ISL f = 500 MHz 33 38  40 45  dB Input Return Loss H RLin f = 500 MHz 8 11  10 13  dB Output Return Loss RLout f = 500 MHz 2.5 5.5  5.5 8.5  dB Saturated Output Power PO(sat) f = 500 MHz, 4.0 1.0  3.0 0  dBm Pin = 6 dBm P Data Sheet PU10443EJ1V0DS 4

PC2745TB,PC2746TB STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25C, VCC = 3.0 V, ZS = ZL = 50 ) Parameter Symbol Test Conditions Reference Value Unit PC2745TB PC2746TB T Circuit Current ICC VCC = 1.8 V, No signal 4.5 4.5 mA Power Gain GP VCC = 3.0 V, f = 1.0 GHz 12.0 18.5 dB VCC = 3.0 V, f = 2.0 GHz 11.0  VCC = 1.8 V, f = 0.5 GHz 7.0 U14.0 Noise Figure NF VCC = 3.0 V, f = 1.0 GHz 5.5 4.2 dB VCC = 3.0 V, f = 2.0 GHz 5.7  VCC = 1.8 V, f = 0.5 GHz 8.0 5.0 Upper Limit fu VCC = 1.8 V, 3 dB down below from gain at f = 0.1 GHz 1.8 1.1 GHz Operating O Frequency Isolation ISL VCC = 3.0 V, f = 1.0 GHz 33 38 dB VCC = 3.0 V, f = 2.0 GHz 30  VCC = 1.8 V, f = 0.5 GHz 35 37 Input Return RLin VCC = 3.0 V, f = 1.0 GHz - 13.0 10.0 dB Loss VCC = 3.0 V, f = 2.0 GHz 14.0  VCC = 1.8 V, f = 0.5 GHz E 6.5 10.0 Output Return RLout VCC = 3.0 V, f = 1.0 GHz 6.5 8.5 dB Loss VCC = 3.0 V, f = 2.0 GHz 8.5  VCC = 1.8 V, f = 0.5 GHz 6.0 9.5 Saturated PO(sat) VCC = 3.0 V, f = 1.0 GHzS, Pin = 6 dBm 2.5 1.0 dBm Output Power VCC = 3.0 V, f = 2.0 GHz, Pin = 6 dBm 3.5  VCC = 1.8 V, f = 0.5 GHz, Pin = 10 dBm 11.0 8.0 3rd Order IM3 VCC = 3.0 V, Pout = 10 dBm, f1 = 500 MHz, f2 = 502 MHz 30.0 26.0 dBc Intermodulation VCC = 1.8 V, Pout = 20 dBm, f1 = 500 MHz, f2 = 502 MHz 31.0 37.0 Distortion VCC = 3.0 AV, Pout = 10 dBm, f1 = 1 000 MHz, f2 = 1 002 MHz 26.0  H P 5 Data Sheet PU10443EJ1V0DS

PC2745TB,PC2746TB TEST CIRCUIT T U O EXAMPLE OF APPLICATION CIRCUIT - E S A The application circuits and their parameters are for references only and are not intended for use in actual design-ins. CAPACITORS FOR H THE VCC, INPUT, AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supPplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50  load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, fc = 1/(2RC). Data Sheet PU10443EJ1V0DS 6

PC2745TB,PC2746TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD T U O - COMPONENT LIST E Value C 1 000 pF S For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATIONS A OF 6-PIN MINI-MOLD, 6-PIN SUPER MINI-MOLD SILICON HIGH-FREQUENCY WIDEBAND AMPLIFIER MMIC (P11976E). H P 7 Data Sheet PU10443EJ1V0DS

PC2745TB,PC2746TB TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)  PC2745TB  T U O - E S A H P Remark The graphs indicate nominal characteristics. Data Sheet PU10443EJ1V0DS 8

PC2745TB,PC2746TB  PC2745TB  T U O - E S A H P Remark The graphs indicate nominal characteristics. 9 Data Sheet PU10443EJ1V0DS

PC2745TB,PC2746TB SMITH CHART (TA = +25C, VCC = 3.0 V)  PC2745TB  T S11-FREQUENCY U O - E S S22-FREQUENCY A H P Data Sheet PU10443EJ1V0DS 10

PC2745TB,PC2746TB S-PARAMETERS T U O - E S A H P 11 Data Sheet PU10443EJ1V0DS

PC2745TB,PC2746TB TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)  PC2746TB  T U O - E S A H P Remark The graphs indicate nominal characteristics. Data Sheet PU10443EJ1V0DS 12

PC2745TB,PC2746TB  PC2746TB  T U O - E S A H P Remark The graphs indicate nominal characteristics. 13 Data Sheet PU10443EJ1V0DS

PC2745TB,PC2746TB SMITH CHART (TA = +25C, VCC = 3.0 V)  PC2746TB  S11-FREQUENCY T U O - E S S22-FREQUENCY A H P Data Sheet PU10443EJ1V0DS 14

PC2745TB,PC2746TB S-PARAMETERS T U O - E S A H P 15 Data Sheet PU10443EJ1V0DS

PC2745TB,PC2746TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) T U O - E S A H P Data Sheet PU10443EJ1V0DS 16

PC2745TB,PC2746TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. T (3) The bypass capacitor should be attached to the VCC pin. (4) The DC cut capacitor must be attached to input pin and output pin. RECOMMENDED SOLDERING CONDITIONS U This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260C or below IR260 O Time at peak temperature : 10 seconds or less Time at temperature of 220C or higher : 60 seconds or less Preheating time at 120 to 180C : 12030 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below - VPS Peak temperature (package surface temperature) : 215C or below VP215 Time at temperature of 200C or higher : 25 to 40 seconds Preheating time at 120 to 150C E : 30 to 60 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Wave Soldering Peak temperature (molten solder temperature) : 260C or below WS260 Time at peak temperature : 10 seconds or less S Preheating temperature (package surface temperature) : 120C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Partial Heating Peak temperature (pin temperature) : 350C or below HS350 Soldering timAe (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Caution Do not use different soldering methods together (except for partial heating). H P 17 Data Sheet PU10443EJ1V0DS

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