HMC409LP4E v04.1217 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Typical Applications Features This amplifier is ideal for use as a power Gain: 31 dB T amplifier for 3.3 - 3.8 GHz applications: 40% pAe @ +32.5 dBm pout m • wimAX 802.16 2% eVm @ pout = +22 dBm s • fixed wireless Access with 54mbps ofDm signal - • wireless local loop +46 dBm output ip3 r integrated power Control (Vpd) e w Functional Diagram single +5V supply o General Description p The HmC409lp4e are high efficiency GaAs inGap & HBT mmiC power amplifiers operating from 3.3 to r 3.8 GHz. The amplifier is packaged in a low cost, A leadless smT package. Utilizing a minimum of e external components the amplifier provides 31 dB n of gain and +32.5 dBm of saturated power from a i l +5V supply voltage. The power control (Vpd) can be - used for full power down or rf output power/current s control. for +22 dBm ofDm output power (64 QAm, r 54 mbps), the HmC409lp4e achieve an error vector e magnitude (eVm) of 2%, meeting wimAX 802.16 lin- i f earity requirements. i l p m Electrical Specifications, T = +25° C, Vs = +5V, Vpd = +5V, Vbias=+5V A A parameter min. Typ. max. min. Typ. max. min. Typ. max. Units frequency range 3.3 - 3.4 3.4 - 3.6 3.6 - 3.8 GHz Gain 30 32 29 31.5 28 30 dB Gain Variation over Temperature 0.04 0.05 0.04 0.05 0.035 0.045 dB/ °C input return loss 10 15 15 dB output return loss 13 14 10 dB output power for 1dB Compression (p1dB) 28 30 28 30.5 28 30.5 dBm saturated output power (psat) 32 32.5 32 dBm output Third order intercept (ip3) [2] 41 45 42 45.5 41 45 dBm error Vector magnitude @ 3.5 GHz 2 % (54 mbps ofDm signal @ +22 dBm pout) noise figure 5.8 5.8 6 dB supply Current (icq) Vs= Vcc1 + Vcc2= +5V 615 615 615 mA Control Current (ipd) Vpd = +5V 4 4 4 mA switching speed ton, toff 20 20 20 ns Bias Current (ibias) 10 10 10 mA note 1: specifications and data reflect HmC409lp4e measured using the application circuit found herein. Contact the HmC Applications Group for assistance in optimizing performance for your application. note 2: Two-tone output power of +15 dBm per tone, 1 mHz spacing. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 1 rliicgehntss eo fi sth girrda nptaerdti ebsy t himatp mlicaayt iroens uolrt fortohme riwtsi sues eu.n Sdpeer caifinyc aptiaotnesn ts ourb jpeactte tnot crhigahntgs eo wf Aitnhaoluotg n oDteicveic. eNso. Phone: 781-329-4700 • Order online at www.analog.com Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D

HMC409LP4E v04.1217 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Broadband Gain & Return Loss Gain vs. Temperature 35 38 30 25 35 T 20 m NSE (dB) 11505 SSS212112 N (dB) 2392 - s SPO -05 GAI r RE -10 26 +25 C e --2105 23 +-4805 CC w -25 o -30 20 p 2 2.5 3 3.5 4 4.5 5 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) FREQUENCY (GHz) & r A Input Return Loss vs. Temperature Output Return Loss vs. Temperature e 0 0 n i l -5 +25 C -5 +85 C S (dB)-10 S (dB) -40 C s - S S-10 O O r RN L-15 RN L e U U-15 RET-20 ++2855 CC RET fi -40 C i -20 l -25 p -30 -25 m 3 3.2 3.4 3.6 3.8 4 3 3.2 3.4 3.6 3.8 4 A FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature Power Down Isolation vs. Temperature 0 0 -10 -10 dB)-20 ++2855 CC dB)-20 ++2855 CC N ( -40 C N ( -40 C O O TI-30 TI-30 A A L L O O IS-40 IS-40 -50 -50 -60 -60 3 3.2 3.4 3.6 3.8 4 3 3.2 3.4 3.6 3.8 4 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 2 Application Support: Phone: 1-800-ANALOG-D

HMC409LP4E v04.1217 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz P1dB vs. Temperature Psat vs. Temperature 36 36 T 34 34 m 32 32 s m) m) dB 30 dB 30 r - P1dB ( 28 PSAT ( 28 +25 C e +85 C 26 +25 C 26 -40 C w +85 C 24 -40 C 24 o p 22 22 3 3.2 3.4 3.6 3.8 4 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 & FREQUENCY (GHz) FREQUENCY (GHz) r A e Output IP3 vs. Temperature Power Compression @ 3.5 GHz n 50 40 i l %) 35 46 E ( - A 30 s B), P 25 r Bm) 42 N (d fie IP3 (d 38 ++-428055 CCC Bm), GAI 1250 d pli 34 Pout ( 150 GPPoaAuiEnt (((dd%BB))m) m 30 0 3 3.2 3.4 3.6 3.8 4 -20 -16 -12 -8 -4 0 4 8 A FREQUENCY (GHz) INPUT POWER (dBm) Gain & Power vs. Supply Voltage Noise Figure vs. Temperature 35 12 dBm) 34 10 ++2855 CC m), Psat ( 33 RE (dB) 8 -40 C B 32 U B (d FIG 6 B), P1d 3301 NOISE 4 d Gain AIN ( 29 PP1sdaBt 2 G 28 0 4.75 5 5.25 3 3.2 3.4 3.6 3.8 4 Vcc SUPPLY VOLTAGE (Vdc) FREQUENCY (GHz) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 3 Application Support: Phone: 1-800-ANALOG-D

HMC409LP4E v04.1217 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz Power Dissipation 40 800 4.4 m) 35 700 T sat (dB 30 600 N (W) 4 Max Pdiss @ +85C m P1dB (dBm), P 122505 Icc 345000000 Icc (mA) R DISSIPATIO 33..26 r - s AIN (dB), 150 PGP1sadainBt 120000 POWE 22..48 we G o 0 0 2 p 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5 -20 -16 -12 -8 -4 0 4 8 Vpd (Vdc) INPUT POWER (dBm) & r EVM vs. Temperature @ 3.5 GHz OFDM A 54 Mbps Signal e 14 n E (%) 12 li D U - GNIT 10 ++2855 CC s MA 8 -40 C r R TO 6 e ROR VEC 4 lifi ER 2 p 0 m 10 12 14 16 18 20 22 24 26 28 30 A OUTPUT POWER (dBm) For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 4 Application Support: Phone: 1-800-ANALOG-D

HMC409LP4E v04.1217 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Typical Supply, Current vs. Supply Absolute Maximum Ratings Voltage, Vcc1 = Vcc2 = Vpd Collector Bias Voltage (Vcc1, Vcc2) +5.5 Vdc Vs (Vdc) icq (mA) T Control Voltage (Vpd) +5.5 Vdc 4.75 516 m rf input power (rfin)(Vs = Vpd = +5Vdc) +10 dBm 5.0 615 s Junction Temperature 150 °C 5.25 721 Continuous pdiss (T = 85 °C) - 3.74 w (derate 57.5 mw/°C above 85 °C) r Thermal resistance e 17.4 °C/w (junction to ground paddle) w storage Temperature -65 to +150 °C eleCTrosTATiC sensiTiVe DeViCe o operating Temperature -40 to +85 °C oBserVe HAnDlinG preCAUTions p Class 1A, esD sensitivity (HBm) & 24-Lpeaasdse Lde 2a5d0 FVrame Chip Scale Package [LFCSP] Outline Drawing 4 x 4 mm Body and 0.85 mm Package Height (CP-24-16) r Dimensions shown in millimeters A DETAIL A e (JEDEC 95) n 4.10 0.30 i 4.00 SQ 0.25 l PIN 1 3.90 0.18 PIN 1 INDICATOR INDICATOR AREA OPTIONS - 19 24 (SEE DETAIL A) s 18 1 r 0.50 BSC 2.85 e EXPOSED 2.70 SQ PAD i 2.55 f i 13 6 l 0.50 12 7 0.20 MIN p TOP VIEW BOTTOM VIEW 0.40 m 0.30 FOR PROPER CONNECTION OF A 0.90 THE EXPOSED PAD, REFER TO 0.85 THE PIN CONFIGURATION AND 0.80 0.05 MAX FUNCTION DESCRIPTIONS 0.02 NOM SECTION OF THIS DATA SHEET. COPLANARITY PKG-004926/PKG-004942 SEPALTAINNGE COMPLIANT TO JEDE0C.2 S0 TRAENFDAR0D.0S8 MO-220-VGGD-8. 05-25-2016-B 24-lead lead frame Chip scale package [lfCsp] 4 mm × 4 mm Body and 0.85 mm package Height (Cp-24-16) Dimensions shown in millimeters. Package Information part number package Body material lead finish msl rating package marking [2] HmC409lp4e roHs-compliant low stress injection molded plastic 100% matte sn msl3 [1] H409 XXXX [1] max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 5 Application Support: Phone: 1-800-ANALOG-D

HMC409LP4E v04.1217 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Application Circuit T m s - r e w o p & E r A e n i l - s r e i f i l p m A recommended Component Values Tl1 Tl2 Tl3 C1 - C5 100 pf impedance 50 ohm 27 ohm 50 ohm C6 - C7 1000 pf physical length 0.068” 0.062” 0.164” C8 10 pf electrical length 12˚ 11˚ 29˚ C9 0.5 pf pCB material: 10 mil rogers 4350, er = 3.48 C10 1.6 pf C11 4.7µf l1, l2 3.9 nH l3 2.2 nH r1 56 ohm For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 6 Application Support: Phone: 1-800-ANALOG-D

HMC409LP4E v04.1217 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Pin Descriptions pin number function Description interface schematic T 1-3, 5, 6, 8, 10 -14, no connection required. These pins may be connected to m n/C 18, 19, 21, 22, 24 rf/DC ground without affecting performance. s This pin is AC coupled 4 rfin - and matched to 50 ohms. r e w power control pin. for maximum power, this pin should be connected to 5V thru a 56 Ω resistor. A high-voltage or 7 Vpd o small resistor is not recommended for lower idle current. This voltage can be reduced or the resistor increased. p & r A 9 Vbias DC power supply pin for bias circuitry e n i l - s 15, 16, 17 rfoUT rf output and DC bias for the output stage. r e i f power supply voltage for the second amplifier stage. i 20 Vcc2 external bypass capacitors and pull up choke are required l as shown in the application schematic. p m power supply voltage for the first amplifier stage. external A 23 Vcc1 bypass capacitors are required as shown in the application schematic. Ground: Backside of package has exposed metal ground GnD slug that must be connected to ground thru a short path. Vias under the device are required. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 7 Application Support: Phone: 1-800-ANALOG-D

HMC409LP4E v04.1217 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Evaluation PCB T m s - r e w o p & r A e n i l - s r e i f i l p m A List of Materials for Evaluation PCB 108355 [1] The circuit board used in the application should item Description use rf circuit design techniques. signal lines should J1 - J2 pCB mount smA rf Connector have 50 ohm impedance while the package ground J3, J4 2 mm DC Header leads and exposed paddle should be connected C1 - C5 100 pf Capacitor, 0402 pkg. directly to the ground plane similar to that shown. C6 - C7 1000 pf Capacitor, 0603 pkg. A sufficient number of via holes should be used C8 10 pf Capacitor, 0402 pkg. to connect the top and bottom ground planes. The C9 0.5 pf Capacitor, 0603 pkg. evaluation board should be mounted to an appropri- C10 1.6 pf Capacitor, 0603 pkg. ate heat sink. The evaluation circuit board shown is C11 4.7 µf, Tantalum available from Analog Devices, upon request. l1, l2 3.9 nH inductor, 0603 pkg. l3 2.2 nH inductor, 0402 pkg. Toko r1 56 ohm resistor, 0603 pkg. U1 HmC409lp4e Amplifier pCB [2] 108353 eval Board [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350, er = 3.48 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com 8 Application Support: Phone: 1-800-ANALOG-D

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: A nalog Devices Inc.: HMC409LP4E HMC409LP4ETR 108355-HMC409LP4