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  • 型号: TS110-7A1
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TS110-7A1产品简介:

ICGOO电子元器件商城为您提供TS110-7A1由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 TS110-7A1价格参考。STMicroelectronicsTS110-7A1封装/规格:晶闸管 - SCR, SCR 700V 1.25A Sensitive Gate Through Hole TO-92。您可以下载TS110-7A1参考资料、Datasheet数据手册功能说明书,资料中有TS110-7A1 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

SCR SENS 700V 1.25A TO-92SCR 700V High Surge 1.25A SCR 100uA

产品分类

SCR - 单个分离式半导体

GateTriggerCurrent-Igt

100 uA

GateTriggerVoltage-Vgt

0.8 V

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体闸流管,SCR,STMicroelectronics TS110-7A1-

数据手册

点击此处下载产品Datasheet

产品型号

TS110-7A1

SCR类型

灵敏栅极

产品培训模块

http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=26297http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=26298

产品种类

SCR

供应商器件封装

TO-92

保持电流Ih最大值

2 mA

其它名称

497-13405
TS1107A1

其它有关文件

http://www.st.com/web/catalog/sense_power/FM144/CL1220/SC127/PF250347?referrer=70071840

包装

散装

商标

STMicroelectronics

安装类型

通孔

安装风格

Through Hole

封装

Bulk

封装/外壳

TO-226-3、TO-92-3 标准主体

封装/箱体

TO-92

工作温度

-40°C ~ 125°C

工厂包装数量

2500

开启状态RMS电流-ItRMS

1.25 A

最大工作温度

+ 125 C

最小工作温度

- 40 C

栅极触发电压-Vgt

0.8 V

栅极触发电流-Igt

100 uA

标准包装

2,500

电压-断态

700V

电压-栅极触发(Vgt)(最大值)

800mV

电压-通态(Vtm)(最大值)

1.4V

电流-不重复浪涌50、60Hz(Itsm)

25A,27A

电流-保持(Ih)(最大值)

2mA

电流-断态(最大值)

1µA

电流-栅极触发(Igt)(最大值)

100µA

电流-通态(It(AV))(最大值)

800mA

电流-通态(It(RMS))(最大值)

1.25A

系列

TS110-7

额定重复关闭状态电压VDRM

700 V

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PDF Datasheet 数据手册内容提取

TS110-7 High surge voltage 1.25 A SCR for circuit breaker Datasheet - production data Features • On-state rms current, 1.25 A • Repetitive peak off-state voltage, 700 V A • Non-repetitive direct surge peak off-state voltage, 1250 V • Non-repetitive reverse surge peak off-state voltage, 850 V • Triggering gate current, 100 µA G K A Description Thanks to highly sensitive triggering levels, the K TS110-7 series is suitable for circuit breaker G applications where the available gate current is SMBflat-3L limited. Such applications include GFCI (ground TS110-7UF fault circuit interrupter), AFCI (arc fault circuit interrupter), RCD (residual current device), and K RCBO (residual current circuit breaker with overload protection). G A TO-92 with“GAK”pinout The 1250 V surge voltage capability of the TS110-7A1 TS110-7 enables high robustness of the whole circuit breaker. The low leakage current of the TS110-7 reduces power consumption over the entire lifetime of the circuit breaker. The TS110-7 is available in through-hole TO-92 package with GAK pinout and in SMBflat-3L. June 2014 DocID022271 Rev 4 1/10 This is information on a product in full production. www.st.com

Characteristics TS110-7 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit TO-92 T = 58 °C l I On-state rms current (180° conduction angle) 1.25 A T(RMS) SMBflat-3L T = 110 °C tab Average on-state current TO-92 Tl = 58 °C IT 0.8 A (AV) (180° conduction angle) SMBflat-3L T = 110 °C tab t = 8.3 ms 27 p Non repetitive surge peak on-state current t = 10 ms 25 I p A TSM 1st step: one surge every 5 seconds, 25 surges 25 times 12 A, t = 10 ms T = 25 °C 2nd step: one surge every 5 seconds, 25 surges p j initial 25 times 16 A I²t I²t Value for fusing tp = 10 ms 3.1 A2S Critical rate of rise of on-state current F = 60 Hz T = 125 °C 100 I = 2 x I , t ≤ 100 ns j G GT r dI/dt A/µs Critical rate of rise of on-state current T = 25 °C 100 Gate open, V = V , t ≤ 100 ns j D BO r V , DRM Repetitive peak off-state voltage, gate open T = 125 °C 700 V V j RRM Non-repetitive direct surge peak off-state V t = 50 µs T = 25 °C 1250 V DSM voltage, R = 220 Ω p j GK Non-repetitive reverse surge peak off-state V t = 50 µs T = 25 °C 850 V RSM voltage, R = 220 Ω p j GK I Peak gate current t = 20 µs T = 125 °C 1.2 A GM p j P Average gate power dissipation T = 125 °C 0.2 W G(AV) j T Storage junction temperature range - 40 to + 150 stg °C T Operating junction temperature range - 40 to + 125 j Table 2. Electrical characteristics Symbol Test conditions Value Unit Min. 1 I µA GT V = 12 V, R = 140Ω T = 25 °C Max. 100 D L j V Max. 0.8 V GT V V = V , R = 33 kΩ, R = 220 Ω T = 125 °C Min. 0.1 V GD D DRM L GK j V I = 2 mA T = 25 °C Min. 7.5 V RG RG j I I = 50 mA, R = 220 Ω T = 25 °C Max. 2 mA H T GK j I I = 5 mA, R = 220 Ω T = 25 °C Max. 2 mA L G GK j dV/dt V = 67% V R = 220 Ω T = 125 °C Min. 15 V/µs D DRM, GK j 2/10 DocID022271 Rev 4

TS110-7 Characteristics Table 3. Static electrical characteristics Symbol Test conditions Value Unit V I = 2.5 A, t = 380 µs T = 25 °C Max. 1.4 V TM TM p j V Threshold voltage T = 125 °C Max. 0.9 V T0 j R Dynamic resistance T = 125 °C Max. 200 mΩ D j IDRM V = V / V , R = 220 Ω Tj = 25 °C Max. 1 µA IRRM D DRM RRM GK Tj = 125 °C 100 µA Table 4. Thermal resistance Symbol Parameter Value Unit R Junction to leads (DC) TO-92 65 th(j-l) TO-92 160 R Junction to ambient (DC) °C/W th(j-a) SMBflat-3L 75 R Junction to case (DC) S = 5 cm2 SMBflat-3L 14 th(j-c) Figure 1. Maximum average power dissipation Figure 2. Average and DC on-state current versus average on-state current versus lead temperature (TO-92) 1.2 P(W) IT(AV)(A) 1.4 α= 30°,60°,90°,120°,180°,DC α= 30°,60°,90°,120°,180°,DC 1.0 1.2 1.0 0.8 0.8 0.6 0.6 0.4 0.4 360° 0.2 0.2 IT(AV)(A) α Tlead(°C) 0.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 25 50 75 100 125 Figure 3. Average and DC on-state current Figure 4. Average and DC on-state current versus lead temperature (SMBflat-3L) versus ambient temperature IT(AV)(A) IT(AV)(A) 1.4 α= 30°,60°,90°,120°,180°,DC 1.2 SMBF-3L 1.2 DC 1.0 SMBF-3L 1.0 0.8 180- 0.8 TO-92 0.6 DC 0.6 TO-92 0.4 0.4 180- 0.2 0.2 Tlead(°C) Tamb(°C) 0.0 0.0 0 25 50 75 100 125 0 25 50 75 100 125 DocID022271 Rev 4 3/10 10

Characteristics TS110-7 Figure 5 . Relative variation of thermal Figure 6. Relative variation of gate triggering impedance junction to ambient versus pulse current and voltage, holding and latching duration current versus T j 1.00 K=[Zth(j-a)/Rth(j-a)] 3.0 IGT,IH,IL,VGT[Tj] /IGT,IH,IL,VGT[Tj=25°C] TO-92 2.8 IGT 2.6 SMBflat-3L Copper surface 2.4 area = 5cm² 2.2 IH& IL 2.0 1.8 1.6 0.10 1.4 1.2 VGT 1.0 0.8 0.6 tp(s) 0.4 0.2 Tj(°C) 0.01 0.0 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 -40 -20 0 20 40 60 80 100 120 Figure 7. Relative variation of holding current Figure 8. Relative variation of dV/dt immunity versus gate-cathode resistance (typical values) versus gate-cathode resistance (typical values) IH[RGK] / IH[RGK= 220Ω] dV/dt[RGK] / dV/dt[RGK= 220(cid:2)(cid:3)] 1.5 10.00 Tj= 125°C VD= 0.67 x VDRM 1.0 1.00 0.5 0.10 RGK(kΩ) RGK((cid:3)) 0.0 0.01 0.1 1.0 10.0 0 200 400 600 800 Figure 9. Relative variation of dV/dt immunity Figure 10. Relative variation of dV/dt immunity versus gate-cathode capacitance (typical versus junction temperature with R = 220 Ω GK values) (typical values) 5.0 dV/dt[CGK] / dV/dt[CGK= 100 nF] 10dV/dt[Tj] / dV/dt[Tj=125 °C] Typical value of dV/dt[CGK=100 nF]= 25V/µs 4.5 9 RGK= 220Ω 4.0 Tj= 125°C 8 VD= 0.67 xVDRM VD= 0.67 xVDRM 3.5 7 3.0 6 2.5 5 2.0 4 1.5 3 1.0 2 0.5 CGK(nF) 1 Tj(°C) 0.0 0 0 20 40 60 80 100 120 140 160 180 200 220 20 40 60 80 100 120 4/10 DocID022271 Rev 4

TS110-7 Characteristics Figure 11. S urge peak on-state current versus Figure 12. Non-repetitive surge peak on-state number of cycles current, and corresponding values of I2t ITSM(A) ITSM(A),I 2t (A 2s) 26 1000 24 Tjinitial=25°C 2202 TNjoinni triaelp=e2t5itiv°eC tp=10ms One cycle 18 SMBF-3L 100 ITSM 16 Repetitive 14 TA=25°C 12 10 8 10 TO-92 6 Repetitive I²t 4 TA=25°C Sinusoidal pulse with 2 Number of cycles width tp < 10 ms tp(ms) 0 1 1 10 100 1000 0.01 0.10 1.00 10.00 Figure 13. On-state characteristics (maximum Figure 14. Thermal resistance junction to values) ambient versus copper surface under anode (SMBflat-3L) ITM(A) Rth(j-a)(°C/W) 100.0 170 160 Epoxy printed circuit board FR4 150 copper thickness = 35 µm 140 10.0 130 120 110 TJ=125°C 100 90 1.0 80 TJ=25°C 70 VTM(V) RVdTt=oj2m=00a0.x9 m V:Ω 5600 S(cm²) 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1 2 3 4 5 DocID022271 Rev 4 5/10 10

AC line transient voltage ruggedness TS110-7 2 AC line transient voltage ruggedness In comparison with standard SCRs, the TS110-7 is self-protected against over-voltage. The TS110-7 switch can safely withstand AC line surge voltages by switching to the on state (for less than 10 ms on 50 Hz mains) to dissipate energy shocks through the load. The load limits the current through the TS110-7. The self-protection against over-voltage is based on an overvoltage crowbar technology. This safety feature works even with high turn-on current ramp up. Figure15 represents the TS110-7 in a test environment. It is used to stress the TS110-7 switch according to the IEC 61000-4-5 standard conditions. The TS110-7 folds back safely to the on state as shown in Figure16. The TS110-7 recovers its blocking voltage capability after the surge and the next zero current crossing. Such a non repetitive test can be done at least 10 times. Figure 15. Overvoltage ruggedness test circuit for IEC 61000-4-5 standards Surge generator Model of the load Filtering unit R R 1 2 60Ω 60Ω AC Mains CIN 150 nF TS110 VT I T 12Ω47 nF Figure 16. Typical current and voltage waveforms across the TS110-7 during IEC61000-4-5 standard test Vpeak=VBO 1.2/50 µs voltage surge V 0 Ipeak= 25 A I 0 dI/dt = 100 A/µs 6/10 DocID022271 Rev 4

TS110-7 Package information 3 Package information • Epoxy meets UL94, V0 • Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 17. TO_92 dimensions (definitions) A a B C F D E Table 5. TO-92 dimensions (values) Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 1.35 0.053 B 4.70 0.185 C 2.54 0.100 D 4.40 0.173 E 12.70 0.500 F 3.70 0.146 a 0.5 0.019 For packing information see STMicroelectronics document PD0022 Packing information, “Axial, through hole, surface mount and chip scale packages for IPAD™, protection, rectifiers, thyristors and ACSs™”. DocID022271 Rev 4 7/10 10

Package information TS110-7 Figure 18. SMBflat-3L dimensions (definitions) A c e D b 2x L 2x L2 2x L1 E E1 L1 L L2 b4 Table 6. SMBflat-3L dimensions (values) Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 0.90 1.10 0.035 0.043 b 0.35 0.65 0.014 0.026 b4 1.95 2.20 0.07 0.087 c 0.15 0.40 0.006 0.016 D 3.30 3.95 0.130 0.156 E 5.10 5.60 0.201 0.220 E1 4.05 4.60 0.156 0.181 L 0.75 1.50 0.030 0.059 L1 0.40 0.016 L2 0.60 0.024 e 1.60 0.063 Figure 19. SMBflat-3L footprint dimensions 5.84 0.51 (0.230) (0.020) 2.07 2.07 (0.082) (0.082) 0.51 (0.020) 1.20 3.44 1.20 (0.047) (0.136) (0.047) millimeters (inches) 8/10 DocID022271 Rev 4

TS110-7 Ordering information 4 Ordering information Figure 20. Ordering information scheme TS 1 10 - 7 A1 (-AP) Sensitive SCR series Current (rms) 1 = 1.25 A Gate sensitivity 10 = 100 µA Voltage 7 = 700 V Package A1 = TO-92 with“GAK”pinout UF = SMBflat-3L Packing mode -AP = Ammopack (TO_92) Blank = Bulk (TO-92), 13”tape and reel (SMBflat-3L) Table 7. Ordering information Order code Marking Package Weight Base qty. Delivery mode TS110-7A1 TS110-7 2500 Bulk T0-92 200 mg TS110-7A1-AP TS110-7 2000 Ammopack TS110-7UF TS110-7 SMBflat-3L 47 mg 5000 Tape and reel 13” 5 Revision history Table 8. Document revision history Date Revision Changes 01-Sep-2012 1 Initial release. 11-Sep-2012 2 Added SMBflat-3L package. 17-Oct-2013 3 Corrected typographical error in Figure8. 18-Jun-2014 4 Updated device name. DocID022271 Rev 4 9/10 10

TS110-7 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2014 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10 DocID022271 Rev 4