STTH120L06TV Turbo 2 ultrafast high voltage rectifier Datasheet - production data Description A1 K1 This device that uses ST Turbo 2 600 V A2 K2 technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and freewheeling diode. A2 Table 1: Device summary K2 Symbol Value A1 IF(AV) 2 x 60 A K1 VRRM 600 V ISOTOP Tj (max.) 150 °C VF (typ.) 0.95 V trr (max.) 70 ns Features  Ultrafast switching  Low reverse current TM: ISOTOP is a trademark of  Low thermal resistance STMicroelectronics  Reduces switching and conduction losses  Insulated package ISOTOP:  Insulated voltage: 2500 V sine RMS January 2018 DocID10766 Rev 4 1/9 This is information on a product in full production. www.st.com

Characteristics STTH120L06TV 1 Characteristics Table 2: Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) Forward rms current 120 A IF(AV) Average forward current, δ = 0.5 TC = 65 °C, per diode 60 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 500 A Tstg Storage temperature range -55 to +150 °C Tj Maximum operating junction temperature 150 °C Table 3: Thermal parameters Symbol Parameter Maximum values Unit Per diode 0.98 Rth(j-c) Junction to case Total 0.54 °C/W Rth(c) Coupling 0.1 When the diodes 1 and 2 are used simultaneously: Δ T (diode1) = P x R + P x R j (diode1) th(j-c) (per diode) (diode2) th(c) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 °C - 50 IR(1) Reverse leakage current VR = VRRM µA Tj = 125 °C - 50 500 Tj = 25 °C - 1.55 VF(2) Forward voltage drop IF = 60 A V Tj = 150 °C - 0.95 1.20 Notes: (1)Pulse test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 380 µs, δ < 2% To evaluate the maximum conduction losses, use the following equation: P = 0.93 x I + 0.0045 x I 2 F(AV) F (RMS) 2/9 DocID10766 Rev 4

STTH120L06TV Characteristics Table 5: Dynamic characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IF = 0.5 A, Irr = 0.25 A, IR = 1 - 70 trr Rtimevee rse recovery T°Cj = 25 AIF = 1 A, dIF/dt = 50 A/μs, VR - 75 105 ns = 30 V IRM Rcuervreenrst e recovery T°Cj = 125 IdFI F=/d 6t 0= A1,0 d0I FA/d/μt s= 400 A/μs, - 14 19 A tfr Ftimorew ard recovery T°Cj = 25 IVFF =R 6=0 1 A.1, xd IVF/Fdmta =x 200 A/μs - 500 ns VFP Fvoolrtwagaerd recovery T°Cj = 25 IVFF =R 6=0 1 A.1, xd IVF/Fdmta =x 200 A/μs - 3 V DocID10766 Rev 4 3/9

Characteristics STTH120L06TV 1.1 Characteristics (curves) Figure 1: Conduction losses versus average Figure 2: Forward voltage drop versus forward forward current (per diode) current (per diode) P(W) 140 δ=0.5 120 δ=0.2 100 δ=0.1 δ=0.05 δ=1 80 60 40 T 20 IF(AV)(A) δ=tp/T tp 0 0 10 20 30 40 50 60 70 80 90 100 Figure 3: Relative variation of thermal impedance Figure 4: Peak reverse recovery current versus junction to case versus pulse duration dIF/dt (typical values, per diode) Zth(j-c)/Rth(j-c) 1.0 IRM(A) 60 0.9 VR=400V Tj=125°C 0.8 50 IF=2xIF(AV) 0.7 40 IF=IF(AV) 0.6 IF=0.5xIF(AV) 0.5 30 0.4 20 0.3 T 0.2 10 0.1 Singlepulse tp(s) δ=tp/T tp 0 dIF/dt(A/µs) 0.0 0 50 100 150 200 250 300 350 400 450 500 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Figure 6: Reverse recovery charges versus dIF/dt Figure 5: Reverse recovery time versus dIF/dt (typical values, per diode) (typical values, per diode) 1200 trr(ns) 4.5 Qrr(µC) VR=400V VR=400V Tj=125°C 4.0 Tj=125°C 1000 3.5 IF=2xIF(AV) 800 3.0 IF=2xIF(AV) 2.5 IF=IF(AV) 600 IF=IF(AV) IF=0.5xIF(AV) 2.0 IF=0.5xIF(AV) 400 1.5 1.0 200 0.5 dIF/dt(A/µs) dIF/dt(A/µs) 0 0.0 0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 4/9 DocID10766 Rev 4

STTH120L06TV Characteristics Figure 7: Reverse recovery softness factor versus Figure 8: Relative variations of dynamic dIF/dt (typical values, per diode) parameters versus junction temperature Sfactor 1.6 IF<2xIF(AV) 1.4 VR=400V Tj=125°C 1.2 1.0 0.8 0.6 0.4 0.2 dIF/dt(A/µs) 0.0 0 50 100 150 200 250 300 350 400 450 500 Figure 9: Transient peak forward voltage versus Figure 10: Forward recovery time versus dIF/dt dIF/dt (typical values, per diode) (typical values, per diode) VFP(V) 400tfr(ns) 8 7 ITFj==I1F2(A5V°)C 350 VFR=T1IFj.=1=I1xF(2VA5VF°)Cmax. 6 300 5 250 4 200 3 150 2 100 1 50 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C 100 VR(V) 10 1 10 100 1000 DocID10766 Rev 4 5/9

Package information STTH120L06TV 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.  Epoxy meets UL94, V0  Cooling method: by conduction (C)  Recommended torque value: 1.3 N·m  Maximum torque value: 1.5 N·m STMicroelectronics strongly recommends the use of the screws delivered with this product. The use of any other screws is entirely at the user's own risk and will invalidate the warranty. 2.1 ISOTOP package information Figure 12: ISOTOP package outline 6/9 DocID10766 Rev 4

STTH120L06TV Package information Table 6: ISOTOP package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 11.80 12.20 0.460 0.480 A1 8.90 9.10 0.350 0.358 B 7.80 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033 C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 E2 24.80 0.976 G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 F1 4.60 5 0.181 0.197 H -0.05 0.1 -0.002 0.004 Diam P 4 4.30 0.157 0.169 P1 4 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 DocID10766 Rev 4 7/9

Ordering information STTH120L06TV 3 Ordering information Table 7: Ordering information Delivery Order code Marking Package Weight Base qty. mode STTH120L06TV1 STTH120L06TV1 ISOTOP 27 g (without screws) 10 (with screws) Tube 4 Revision history Table 8: Document revision history Date Revision Changes 07-Sep-2004 1 First issue. 04-Apr-2011 2 Updated Chapter 2: Package information.. Updated section "Features" and section 2.2: "ISOTOP package 20-Jan-2017 3 information". Added cote "H" (-0.05 mm min - 0.1mm max in ISOTOP 22-Jan-2018 4 package information. 8/9 DocID10766 Rev 4

STTH120L06TV IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DocID10766 Rev 4 9/9

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