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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBD7100 High-speed double diode Product data sheet 2003 Nov 07

NXP Semiconductors Product data sheet High-speed double diode PMBD7100 FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION • High switching speed: max. 4 ns 1 anode (a1) • Continuous reverse voltage: max. 100 V 2 anode (a2) • Repetitive peak reverse voltage: max. 100 V 3 common connection • Repetitive peak forward current: max. 450 mA. APPLICATIONS • High-speed switching in thick and thin-film circuits. DESCRIPTION handbook, halfpage 3 3 The PMBD7100 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small SOT23 SMD 1 2 plastic package. 1 2 MARKING Top view MAM383 TYPE NUMBER MARKING CODE(1) PMBD7100 *3A Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. * = W: made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PMBD7100 − plastic surface mounted package; 3 leads SOT23 2003 Nov 07 2

NXP Semiconductors Product data sheet High-speed double diode PMBD7100 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode V repetitive peak reverse voltage − 100 V RRM V continuous reverse voltage − 100 V R I continuous forward current single diode loaded; see Fig.2; note 1 − 215 mA F double diode loaded; see Fig.2; note 1 − 125 mA I repetitive peak forward current − 450 mA FRM I non-repetitive peak forward current square wave; T = 25 °C prior to surge; FSM j see Fig.4 t = 1 µs − 4 A p t = 1 ms − 1 A p t = 1 s − 0.5 A p P total power dissipation T = 25 °C; note 1 − 250 mW tot amb T storage temperature −65 +150 °C stg T junction temperature − 150 °C j Note 1. Device mounted on an FR4 printed-circuit board. 2003 Nov 07 3

NXP Semiconductors Product data sheet High-speed double diode PMBD7100 ELECTRICAL CHARACTERISTICS T = 25 °C unless otherwise specified. amb SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode V forward voltage see Fig.3 F I = 1 mA 715 mV F I = 10 mA 855 mV F I = 50 mA 1 V F I = 150 mA 1.25 V F I reverse current see Fig.5 R V = 25 V 30 nA R V = 100 V 2.5 µA R V = 25 V; T = 150 °C 60 µA R j V = 100 V; T = 150 °C 100 µA R j C diode capacitance V = 0 V; f = 1 MHz; see Fig.6 1.5 pF d R t reverse recovery time when switched from I = 10 mA to 4 ns rr F I = 10 mA; R = 100 Ω; measured at R L I = 1 mA; see Fig.7 R V forward recovery voltage when switched from I = 10 mA to t = 20 nA; 1.75 V fr F r see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R thermal resistance from junction to tie-point 360 K/W th j-tp R thermal resistance from junction to ambient note 1 500 K/W th j-a Note 1. Device mounted on an FR4 printed-circuit board. 2003 Nov 07 4

NXP Semiconductors Product data sheet High-speed double diode PMBD7100 GRAPHICAL DATA MBD033 MDB820 300 300 handIbFook, halfpage IF (mA) 250 (mA) 200 200 single diode loaded 150 double diode loaded 100 100 (1) (2) (3) 50 0 0 0 100 T a m b ( o C) 200 0 0.5 1.0 1.5 VF (V) 2.0 (1) Tj = 150 °C; typical values. Device mounted on an FR4 printed-circuit board. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of ambient Fig.3 Forward current as a function of temperature. forward voltage. 102 MBG704 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) 104 Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 2003 Nov 07 5

NXP Semiconductors Product data sheet High-speed double diode PMBD7100 102 MDB821 0.8 MDB822 handbook, halfpage handbook, halfpage IR Cd (µA) (pF) (1) 10 0.6 (2) (3) 1 0.4 10-1 0.2 10-2 10−3 0 0 50 100 150 Tj (°C) 200 0 5 10 VR (V) 15 (1) VR = 100 °C; maximum values. (2) VR = 100 °C; typical values. (3) VR = 25 °C; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Reverse current as a function of junction Fig.6 Diode capacitance as a function of reverse temperature. voltage; typical values. 2003 Nov 07 6

NXP Semiconductors Product data sheet High-speed double diode PMBD7100 handbook, full pagewidth tr tp t D.U.T. 10% RS = 50Ω IF SAMPLING IF trr t OSCILLOSCOPE V = VR I F x RS R i = 50Ω 90% (1) VR MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω I V 90% R = 50Ω S D.U.T. OSCILLOSCOPE Vfr R i = 50Ω 10% MGA882 t t tr tp input output signal signal Fig.8 Forward recovery voltage test circuit and waveforms. 2003 Nov 07 7

NXP Semiconductors Product data sheet High-speed double diode PMBD7100 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D B E A X HE v M A 3 Q A A1 1 2 c e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A mAa1x. bp c D E e e1 HE Lp Q v w 1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 0.95 0.2 0.1 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45 OUTLINE REFERENCES EUROPEAN ISSUE DATE VERSION IEC JEDEC EIAJ PROJECTION 97-02-28 SOT23 TO-236AB 99-09-13 2003 Nov 07 8

NXP Semiconductors Product data sheet High-speed double diode PMBD7100 DATA SHEET STATUS DOCUMENT PRODUCT DEFINITION STATUS(1) STATUS(2) Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for General ⎯ Information in this document is believed to be extended periods may affect device reliability. accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, Terms and conditions of sale ⎯ NXP Semiconductors expressed or implied, as to the accuracy or completeness products are sold subject to the general terms and of such information and shall have no liability for the conditions of commercial sale, as published at consequences of use of such information. http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights Right to make changes ⎯ NXP Semiconductors infringement and limitation of liability, unless explicitly reserves the right to make changes to information otherwise agreed to in writing by NXP Semiconductors. In published in this document, including without limitation case of any inconsistency or conflict between information specifications and product descriptions, at any time and in this document and such terms and conditions, the latter without notice. This document supersedes and replaces all will prevail. information supplied prior to the publication hereof. No offer to sell or license ⎯ Nothing in this document Suitability for use ⎯ NXP Semiconductors products are may be interpreted or construed as an offer to sell products not designed, authorized or warranted to be suitable for that is open for acceptance or the grant, conveyance or use in medical, military, aircraft, space or life support implication of any license under any copyrights, patents or equipment, nor in applications where failure or malfunction other industrial or intellectual property rights. of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe Export control ⎯ This document as well as the item(s) property or environmental damage. NXP Semiconductors described herein may be subject to export control accepts no liability for inclusion and/or use of NXP regulations. Export might require a prior authorization from Semiconductors products in such equipment or national authorities. applications and therefore such inclusion and/or use is at Quick reference data ⎯ The Quick reference data is an the customer’s own risk. extract of the product data given in the Limiting values and Applications ⎯ Applications that are described herein for Characteristics sections of this document, and as such is any of these products are for illustrative purposes only. not complete, exhaustive or legally binding. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2003 Nov 07 9

NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R76/01/pp10 Date of release: 2003 Nov 07 Document order number: 9397 750 12001