NUP2114 Series, SNUP2114 ESD Protection Diode Low Capacitance ESD Protection for High Speed Data The NUP2114 surge protection is designed to protect high speed data lines from ESD. Ultra−low capacitance and high level of ESD www.onsemi.com protection makes this device well suited for use in USB 2.0 applications. Features • Low Capacitance 0.8 pF • SOT−553 TSOP−6 Low Clamping Voltage CASE 463B CASE 318G • Stand Off Voltage: 5 V • Low Leakage • VP ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model and Class C (Exceeding 400 V) per Machine Model • Protection for the Following IEC Standards: I/O I/O IEC 61000−4−2 Level 4 ESD Protection • UL Flammability Rating of 94 V−0 • S Prefix for Automotive and Other Applications Requiring Unique VN Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable MARKING DIAGRAMS • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant P2M(cid:2) P2M M(cid:2) Typical Applications (cid:2) (cid:2) • 1 High Speed Communication Line Protection 1 • USB 2.0 High Speed Data Line and Power Line Protection SOT−553 TSOP−6 • Monitors and Flat Panel Displays • P2, P2M= Specific Device Code MP3 M = Date Code • Gigabit Ethernet (cid:2) = Pb−Free Package • Notebook Computers (Note: Microdot may be in either location) • Digital Video Interface (DVI) and HDMI PIN CONNECTIONS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit VP 1 5 I/O Operating Junction Temperature Range TJ −40 to +125 °C VN 2 Storage Temperature Range Tstg −55 to +150 °C NC 3 4 I/O Lead Solder Temperature − TL 260 °C Maximum (10 Seconds) SOT−553 Human Body Model (HBM) ESD 16000 V Machine Model (MM) 400 IEC 61000−4−2 Contact 13000 I/O 1 6 I/O IEC61000−4−2 Air 15000 Stresses exceeding those listed in the Maximum Ratings table may damage the VN 2 5 VP device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NC 3 4 NC See Application Note AND8308/D for further description of TSOP−6 survivability specs. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: October, 2017 − Rev. 3 NUP2114/D

NUP2114 Series, SNUP2114 ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) IF Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage VC VBRVRWM IR Maximum Reverse Leakage Current @ VRWM IR VF V VBR Breakdown Voltage @ IT IT IT Test Current IF Forward Current VF Forward Voltage @ IF IPP Ppk Peak Power Dissipation C Max. Capacitance @ VR = 0 and f = 1.0 MHz Uni−Directional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM (Note 1) 5.0 V Breakdown Voltage VBR IT = 1 mA, (Note 2) 5.5 7.5 V Reverse Leakage Current IR VRWM = 5 V 0.01 1.0 (cid:2)A Clamping Voltage VC IPP = 5 A (Note 3) 9.0 V Clamping Voltage VC IPP = 8 A (Note 3) 10 V Maximum Peak Pulse Current IPP 8x20 (cid:2)s Waveform 12 A Junction Capacitance CJ VR = 0 V, f = 1 MHz between I/O Pins and GND 0.8 1.0 pF Junction Capacitance CJ VR = 0 V, f = 1 MHz between I/O Pins 0.5 pF Clamping Voltage VC @ IPP = 1 A (Note 4) 12 V Clamping Voltage VC Per IEC 61000−4−2 (Note 5) Figures 1 and 2 V 1. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 2. VBR is measured at pulse test current IT. 3. Nonrepetitive current pulse (Pin 5 to Pin 2) 4. Surge current waveform per Figure 5. 5. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 6. Include S-prefix devices where applicable. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Negative 8 kV Contact per IEC61000−4−2 www.onsemi.com 2

NUP2114 Series, SNUP2114 IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak First Peak Test Volt- Current Current at Current at 100% Level age (kV) (A) 30 ns (A) 60 ns (A) 90% 1 2 7.5 4 2 2 4 15 8 4 I @ 30 ns 3 6 22.5 12 6 4 8 30 16 8 I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec Device Under ESD Gun Oscilloscope Test 50 (cid:2) 50 (cid:2) Cable Figure 4. Diagram of ESD Test Setup The following is taken from Application Note systems such as cell phones or laptop computers it is not AND8308/D − Interpretation of Datasheet Parameters clearly defined in the spec how to specify a clamping voltage for ESD Devices. at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD ESD Voltage Clamping protection diode over the time domain of an ESD pulse in the For sensitive circuit elements it is important to limit the form of an oscilloscope screenshot, which can be found on voltage that an IC will be exposed to during an ESD event the datasheets for all ESD protection diodes. For more to as low a voltage as possible. The ESD clamping voltage information on how ON Semiconductor creates these is the voltage drop across the ESD protection diode during screenshots and how to interpret them please refer to an ESD event per the IEC61000−4−2 waveform. Since the AND8307/D. IEC61000−4−2 was written as a pass/fail spec for larger 100 tr PEAK VALUE IRSM @ 8 (cid:2)s T 90 N E 80 PULSE WIDTH (tP) IS DEFINED R AS THAT POINT WHERE THE R U 70 PEAK CURRENT DECAY = 8 (cid:2)s C E 60 ULS 50 HALF VALUE IRSM/2 @ 20 (cid:2)s P K 40 A E P 30 F tP O 20 % 10 0 0 20 40 60 80 t, TIME ((cid:2)s) Figure 5. 8 x 20 (cid:2)s Pulse Waveform www.onsemi.com 3

NUP2114 Series, SNUP2114 Figure 6. 500 MHz Data Pattern ORDERING INFORMATION Device Marking Package Shipping† NUP2114UPXV5T1G P2 SOT−553 4,000 / Tape & Reel (Pb−Free) NUP2114UCMR6T1G P2M TSOP−6 3,000 / Tape & Reel (Pb−Free) SNUP2114UCMR6T1G* P2M TSOP−6 3,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 4

NUP2114 Series, SNUP2114 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE V D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. H 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 6 5 4 L2 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, ÉÉÉ GAUGE PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR E1 E PLANE GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D AND E1 ARE DETERMINED AT DATUM H. ÉÉÉ 1 2 3 5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE. L NOTE 5 b M C PSLEAANTIENG DIM MIN MILLNIMOEMTERSMAX DETAIL Z A 0.90 1.00 1.10 e A1 0.01 0.06 0.10 b 0.25 0.38 0.50 c 0.10 0.18 0.26 c D 2.90 3.00 3.10 0.05 A EE1 21..5300 21..7550 31..0700 e 0.85 0.95 1.05 A1 L 0.20 0.40 0.60 DETAIL Z L2 0.25 BSC M 0° − 10° RECOMMENDED SOLDERING FOOTPRINT* 6X 0.60 3.20 6X 0.95 0.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5

NUP2114 Series, SNUP2114 PACKAGE DIMENSIONS SOT−553, 6 LEAD CASE 463B ISSUE C D NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. −X− L 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 5 4 E MILLIMETERS INCHES −Y− HE DIM MIN NOM MAX MIN NOM MAX 1 2 3 A 0.50 0.55 0.60 0.020 0.022 0.024 b 0.17 0.22 0.27 0.007 0.009 0.011 c 0.08 0.13 0.18 0.003 0.005 0.007 b 5 PL c D 1.55 1.60 1.65 0.061 0.063 0.065 e E 1.15 1.20 1.25 0.045 0.047 0.049 0.08 (0.003) M X Y e 0.50 BSC 0.020 BSC L 0.10 0.20 0.30 0.004 0.008 0.012 HE 1.55 1.60 1.65 0.061 0.063 0.065 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.0 1.35 0.0394 0.0531 0.5 0.5 0.0197 0.0197 (cid:2) (cid:3) mm SCALE 20:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com NUP2114/D 6