Freescale Semiconductor Document Number: MWIC930 Technical Data Replaced by MWIC930NR1(GNR1). There are no form, fit or function changes with this part Rev. 5, 5/2006 replacement. N suffix added to part number to indicate transition to lead-free terminations. RF LDMOS Wideband Integrated Power Amplifiers MWIC930R1 The MWIC930 wideband integrated circuit is designed for CDMA and MWIC930GR1 GSM/GSM EDGE applications. It uses Freescale(cid:146)s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On-Chip integral matching circuitry makes it usable from 790 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA. 746-960 MHz, 30 W, 26-28 V Final Application SINGLE N-CDMA, GSM/GSM EDGE • Typical Performance @ P1dB: V = 26 Volts, I = 90 mA, I = RF LDMOS WIDEBAND INTEGRATED DD DQ1 DQ2 240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921-960 MHz) POWER AMPLIFIERS Power Gain (cid:151) 30 dB N Power Added Efficiency (cid:151) 45% N Driver Application O O • Typical Single-Carrier N-CDMA Performance: V = 27 Volts, I = DD DQ1 90 mA, I = 240 mA, P = 5 Watts Avg., Full Frequency Band I DQ2 out I T (865-894 MHz), IS -95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13), T Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% A Probability on CCDF. A Power Gain (cid:151) 31 dB CASE 1329-09 M Power Added Efficiency (cid:151) 21% TO-272 WB-16 M ACPR @ 750 kHz Offset (cid:151) -52 dBc in 30 kHz Bandwidth PLASTIC R• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output MWIC930R1 R Power O• Characterized with Series Equivalent Large-Signal Impedance Parameters O • On-Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output) F• Integrated Quiescent Current Temperature Compensation with F N Enable/Disable Function N • On-Chip Current Mirror gm Reference FET for Self Biasing Application (1) CASE 1329A-03 I• Integrated ESD Protection TO-272 WB-16 GULL I E• 200°C Capable Plastic Package PLASTIC E • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MWIC930GR1 V V I I H H V C RD2 GND 1 16 GND C R VRG2 VVRRGD22 23 15 NC R V VDS1 4 A DS1 VRD1 5 A RF RFin 6 14 V out/ RF V /RF DS2 in DS2 out VRG1 7 VGS1 8 VRD1 VGS2 9 V NC 10 13 NC RG1 GND 11 12 GND V (Top View) GS1 Quiescent Current VGS2 Temperature Compensation Note: Exposed backside flag is source terminal for transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. © Freescale Semiconductor, Inc., 2006. All rights reserved. MWIC930R1 MWIC930GR1 RF Device Data Freescale Semiconductor 1

Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Storage Temperature Range Tstg -65 to +175 °C Operating Junction Temperature TJ 200 °C Table 2. Thermal Characteristics Characteristic Symbol Value (1,2) Unit Thermal Resistance, Junction to Case RθJC °C/W GSM Application Stage 1, 26 Vdc, IDQ = 90 mA 5.9 (Pout = 30 W CW) Stage 2, 26 Vdc, IDQ = 240 mA 1.4 GSM EDGE Application Stage 1, 27 Vdc, IDQ = 90 mA 6.5 N (Pout = 15 W CW) Stage 2, 27 Vdc, IDQ = 240 mA 1.7 N O CDMA Application Stage 1, 27 Vdc, IDQ = 90 mA 6.5 O (Pout = 5 W CW) Stage 2, 27 Vdc, IDQ = 240 mA 1.8 I I TTable 3. ESD Protection Characteristics T A Test Conditions Class A Human Body Model 1 (Minimum) M M Machine Model M3 (Minimum) R Charge Device Model C2 (Minimum) R Table 4. Moisture Sensitivity Level O O Test Methodology Rating Package Peak Temperature Unit F F Per JESD 22-A113, IPC/JEDEC J-STD-020 3 260 °C N N Table 5. Electrical Characteristics (TC = 25°C, unless otherwise noted) I Characteristic Symbol Min Typ Max Unit I EFunctional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 W Avg. N-CDMA, E f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 MHz Offset. VPAR = 9.8 dB @ 0.01% Probability on CCDF V I Power Gain Gps 28 31 (cid:151) dB I H H Power Added Efficiency PAE 18 21 (cid:151) % C Input Return Loss IRL (cid:151) -12 -9 dB C (f = 880 MHz) R R Adjacent Channel Power Ratio ACPR (cid:151) -52 -48 dBc ATypical Performances (In Freescale Test Fixture) VDD = 26 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, 840 MHz<Frequency<920 MHz A Quiescent Current Accuracy over Temperature (2) (cid:151) (cid:151) % Stage 1 with 33.2 kΩ Gate Feed Resistors (-30 to 115°C) ΔI1QT ±2.5 Stage 2 with 47.5 kΩ Gate Feed Resistors (-30 to 115°C) ΔI2QT ±2.5 Gain Flatness in 80 MHz Bandwidth @ Pout = 5 W CW GF (cid:151) 0.3 (cid:151) dB Deviation from Linear Phase in 80 MHz Bandwidth @ Pout = 5 W CW Φ (cid:151) 0.6 (cid:151) ° Delay @ Pout = 5 W CW Including Output Matching Delay (cid:151) 3 (cid:151) ns Part-to-Part Phase Variation @ Pout = 5 W CW ΔΦ (cid:151) ±15 (cid:151) ° 1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 2. Refer to AN1977/D, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977. (continued) MWIC930R1 MWIC930GR1 RF Device Data 2 Freescale Semiconductor

Table 5. Electrical Characteristics (TC = 25°C, unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM/GSM EDGE Performances (In Freescale GSM/GSM EDGE Test Fixture, 50 οhm system) VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, 921 MHz<Frequency<960 MHz Output Power, 1dB Compression Point P1dB (cid:151) 30 (cid:151) W Power Gain @ Pout = 30 W CW Gps (cid:151) 30 (cid:151) dB Power Added Efficiency @ Pout = 30 W CW PAE (cid:151) 45 (cid:151) % Input Return Loss @ Pout = 30 W CW IRL (cid:151) -12 (cid:151) dB Intermodulation Distortion IMD (cid:151) -30 (cid:151) dBc (15 W, 2-Tone, 100 kHz Tone Spacing) Intermodulation Distortion IMD (cid:151) -45 (cid:151) dBc (1 W, 2-Tone, 100 kHz Tone Spacing) backoff Gain Flatness in a 40 MHz Bandwidth @ Pout = 30 W CW GF (cid:151) 0.3 (cid:151) dB N Deviation from Linear Phase in a 40 MHz Bandwidth @ Pout = 30 W CW Φ (cid:151) 0.6 (cid:151) ° N O O I I T T A A M M R R O O F F N N I I E E V V I I H H C C R R A A MWIC930R1 MWIC930GR1 RF Device Data Freescale Semiconductor 3

Z8 V 1 16 VD2 D1 C5 C6 C15 C12 C9 2 NC 15 3 Z7 RF 4 RF INPUT 5 OUTPUT Z1 Z2 Z3 Z4 Z5 C3 Z6 14 6 C1 C2 7 Z9 V 8 G1 9 R1 C13 R3 C10 C7 10 NC Quiescent Current NC 13 C4 Temperature Compensation 11 12 V G2 Z10 R2 C14 R4 C11 C8 N N O O Z1 0.0438″ x 0.970″50 Ω Microstrip Z6 0.0438″ x 0.2009″Microstrip I (not including lead pad) Z7 0.5274″ x 0.0504″Microstrip I T Z2 0.234″ x 0.1183″Microstrip Z8 0.0504″ x 0.250″Microstrip T (including lead pad) Z9 0.880″ x 0.0254″Microstrip A A Z3 0.1575″ x 0.9379″Microstrip Z10 0.0254″ x 0.250″Microstrip M Z4 0.08425″ x 0.0729″Microstrip PCB Rogers 4350, 0.020″, εr = 3.50 M Z5 0.08425″ x 0.5111″Microstrip R Figure 3. MWIC930R1(GR1) Test Fixture Schematic R O O Table 6. MWIC930R1(GR1) Test Fixture Component Designations and Values F F Part Description Part Number Manufacturer N *C1 15 pF High Q Capacitor ATC600S150JW ATC N *C2 6.8 pF High Q Capacitor - GSM Fixture ATC600S6R8CW ATC I 8.2 pF High Q Capacitor - CDMA Fixture ATC600S8R2CW I E *C3 5.6 pF High Q Capacitor ATC600S5R6CW ATC E *C4, C5, C7, C8, C9 47 pF High Q Capacitors ATC600S470JW ATC V V C6, C13, C14, C15 1 μF Chip Capacitors GRM42-2X7R105K050AL Murata I C10, C11, C12 10 nF Chip Capacitors C0603C103J5R Kemet I H H R1, R2 1 k(cid:2), 1/8 W Chip Resistors RM73B2AT102J KOA Speer C R3, R4 1 M(cid:2), 1/4 W Chip Resistors RM73B2BT105J KOA Speer C *For output matching and bypass purposes, it is strongly recommended to use these exact capacitors. R R A A MWIC930R1 MWIC930GR1 RF Device Data 4 Freescale Semiconductor

VD1 C15 MWIC930 Rev 0 VD2 C6 N N C5 O O I I T C12 T A A RF RF M Input C9 C3 Output M R C7 C1 C2 R O C10 C8 O R3 C11 F F N C13 N C4 I R1 I E E VG1 V V I I H H R4 C C R R A C14 R2 A VG2 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MWIC930R1(GR1) Test Circuit Component Layout MWIC930R1 MWIC930GR1 RF Device Data Freescale Semiconductor 5

TYPICAL CHARACTERISTICS −20 34 N (dBc) −25 VPDouDt == 1257 WVd (cAvg.) 33 TC = −30(cid:2)C ORTIO −30 IIDDQQ12 == 29400 m mAA N (dB) 32 25(cid:2)C ST f = 880 MHz AI LATION DI −−3450 Two−Tone PEP = 30 W 3rd Order POWER G 3310 85(cid:2)C DU 5th Order , s O p M −45 G 29 V = 27 Vdc R DD E I = 90 mA T DQ1 INMD, −50 7th Order 28 If D=Q 82 8=0 2M4H0 zmA I −55 27 0.1 1 10 100 0 5 10 15 20 25 30 35 40 N N TONE SPACING (MHz) P , OUTPUT POWER (WATTS) out O Figure 5. Intermodulation Distortion Products Figure 6. Power Gain versus Output Power O versus Output Power I I T T A 32 40 A M Pin = 0 dBm 38 M 30 36 B) d RdB) 28 AIN ( 34 TC = −30(cid:2)C R INFOG, POWER GAIN (ps 222642 91 2d BdBmm 6 dBm 3 dBm IDQ1 = 90 mA G, POWER Gps 3322220864 2855(cid:2)(cid:2)CC VPDouDt == 3207 WVd (cCW) INFO E 15 dBm If D=Q 82 8=0 2M4H0 zmA 22 IIDQ1 == 29400 m mAA E 20 20 DQ2 V 5 10 15 20 25 30 35 700 750 800 850 900 950 1000 V V , SUPPLY VOLTAGE (VOLTS) f, FREQUENCY (MHz) DD I I H Figure 7. Power Gain versus Supply Voltage Figure 8. Power Gain versus Frequency H C C R −16 c) −40 R B AdB) −18 VIIDDDQQD12 === 229740 0 Vm mdAcA RATIO (d −−4424 VIIDDDQQD12 === 229740 0 Vm mdAcA TC = 85(cid:2)C A OSS ( −20 f = 880 MHz TC = 85(cid:2)C WER −46 f9 =−C 8h8a0n MneHl zIS−95 CDMA N L PO −48 TUR −22 NEL −50 25(cid:2)C UT RE 25(cid:2)C CHAN −52 −30(cid:2)C NP −24 NT −54 I −30(cid:2)C E IRL, −26 DJAC −56 R, A −58 −28 CP −60 A 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 7 8 9 10 P , OUTPUT POWER (WATTS) P , OUTPUT POWER (WATTS) out out Figure 9. Input Return Loss versus Output Power Figure 10. Adjacent Channel Power Ratio versus Output Power MWIC930R1 MWIC930GR1 RF Device Data 6 Freescale Semiconductor

TYPICAL CHARACTERISTICS 55 58 T = −30(cid:2)C %) 50 C 25(cid:2)C %) 56 TC = −30(cid:2)C CY ( 45 85(cid:2)C CY ( 54 25(cid:2)C N N E E 85(cid:2)C CI 40 CI 52 EFFI 35 EFFI 50 D D E E D 30 D 48 D D ER A 25 ER A 46 PAE, POW 2105 VIIDDDQQD12 === 229740 0 Vm mdAcA PAE, POW 4442 PVIDDoQuD1t === 329070 WVmd A(cCW) f = 880 MHz I = 240 mA DQ2 10 40 0 5 10 15 20 25 30 35 40 700 750 800 850 900 950 1000 N N P , OUTPUT POWER (WATTS) f, FREQUENCY (MHz) out O Figure 11. Power Added Efficiency versus Figure 12. Power Added Efficiency versus O Output Power Frequency I I T T A A M M R R O O F F N N I I E E V V I I H H C C R R A A MWIC930R1 MWIC930GR1 RF Device Data Freescale Semiconductor 7

Z = 50 Ω o Z load f = 960 MHz f = 740 MHz 1 f = 740 MHz Z in f = 960 MHz N N O O I I T T A VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 W Avg. A M f Zin Zload M MHz Ω Ω R 740 26.61 - j3.68 4.28 + j2.99 R O 760 26.88 - j0.53 4.37 + j2.91 O 780 28.22 + j2.21 4.39 + j2.79 F F 800 30.57 + j4.31 4.34 + j2.64 N N 820 33.79 + j5.53 4.21 + j2.54 I I 840 37.83 + j5.30 4.06 + j2.52 E E 860 41.92 + j3.42 3.90 + j2.58 V V 880 45.58 - j0.40 3.73 + j2.70 I I H 900 47.77 - j5.84 3.59 + j2.93 H 920 47.83 - j12.15 3.43 + j3.17 C C 940 45.55 - j18.05 3.28 + j3.44 R R 960 41.58 - j22.64 3.13 + j3.75 A A Zin = Device input impedance as measured from RF input to ground. Zload = Test circuit impedance as measured from drain to ground. Device Output Under Test Matching Network Z Z in load Figure 13. Series Equivalent Input and Load Impedance MWIC930R1 MWIC930GR1 RF Device Data 8 Freescale Semiconductor

DRIVER/PRE-DRIVER PERFORMANCE Z8 V 1 16 VD2 D1 C5 C6 C15 C12 C9 2 NC 15 3 Z7 RF 4 RF INPUT 5 OUTPUT Z1 Z2 Z3 Z4 Z5 C3 Z6 14 6 C1 C2 7 Z9 V 8 G1 9 R1 C13 R3 C10 C7 10 NC Quiescent Current NC 13 C4 Temperature Compensation 11 12 V G2 Z10 N R2 C14 R4 C11 C8 N O O I I T Z1 0.0438″ x 0.970″50 Ω Microstrip Z6 0.0438″ x 0.2009″Microstrip T A (not including lead pad) Z7 0.5274″ x 0.0504″Microstrip A Z2 0.234″ x 0.1183″Microstrip Z8 0.0504″ x 0.250″Microstrip M (including lead pad) Z9 0.880″ x 0.0254″Microstrip M Z3 0.1575″ x 0.9379″Microstrip Z10 0.0254″ x 0.250″Microstrip R Z4 0.08425″ x 0.0729″Microstrip PCB Rogers 4350, 0.020″, εr = 3.50 R Z5 0.08425″ x 0.5111″Microstrip O O Figure 14. MWIC930R1(GR1) Test Fixture Schematic (cid:151) Alternate Characterization for Driver/Pre-Driver Performance F F N N Table 7. MWIC930R1(GR1) Test Fixture Component Designations and Values (cid:151) I Alternate Characterization for Driver/Pre-Driver Performance I Part Description Part Number Manufacturer E E *C1 12 pF High Q Capacitor ATC600S120JW ATC V V *C2 8.2 pF High Q Capacitor - CDMA Fixture ATC600S8R2CW ATC I *C3 5.6 pF High Q Capacitor ATC600S5R6CW ATC I H *C4, C5, C7, C8, C9 47 pF High Q Capacitors ATC600S470JW ATC H C6, C13, C14, C15 1 μF Chip Capacitors GRM42-2X7R105K050AL Murata C C C10, C11, C12 10 nF Chip Capacitors C0603C103J5R Kemet R R1, R2 1 k(cid:2), 1/8 W Chip Resistors RM73B2AT102J KOA Speer R R3, R4 1 M(cid:2), 1/4 W Chip Resistors RM73B2BT105J KOA Speer A A *For output matching and bypass purposes, it is strongly recommended to use these exact capacitors. MWIC930R1 MWIC930GR1 RF Device Data Freescale Semiconductor 9

TYPICAL CHARACTERISTICS DRIVER/PRE-DRIVER PERFORMANCE c) −60 B d O ( TI A −61 R R WE ACPR O P −62 L E N N System Noise Floor A H −63 T C VDD = 27 Vdc N I = 105 mA, I = 230 mA E DQ1 DQ2 AC −64 f = 880 MHz J D N−CDMA IS−95 Pilot, Sync, Paging, A R, Traffic Codes 8 Through 13 CP −65 N A N 20 22 24 26 28 30 P , OUTPUT POWER (dBm) O out O Figure 15. Single-Carrier N-CDMA ACPR I versus Output Power I T T A A M M R R O O F F N N I I E E V V I I H H C C R R A A MWIC930R1 MWIC930GR1 RF Device Data 10 Freescale Semiconductor

Z = 50 Ω o Z f = 960 MHz f = 740 MHz in f = 740 MHz Z load f = 960 MHz N N O O I I T T A VDD = 27 Vdc, IDQ1 = 105 mA, IDQ2 = 230 mA, Pout = 5 W Avg. A M f Zin Zload M MHz Ω Ω R 740 53.944 + j6.745 2.535 + j1.662 R O 760 54.452 + j7.112 2.602 + j1.080 O 780 55.006 + j7.440 2.688 + j0.548 F F 800 55.549 + j7.656 2.659 + j0.064 N N 820 55.604 + j7.855 2.615 + j0.329 I I 840 55.190 + j7.835 2.568 + j0.450 E E 860 55.110 + j7.410 2.494 + j0.620 V V 880 55.752 + j4.763 2.444 + j0.650 I I H 900 45.606 + j5.832 2.440 + j0.689 H 920 49.206 + j9.284 2.134 + j0.930 C C 940 49.939 + j9.030 2.155 + j0.835 R R 960 50.088 + j8.752 2.095 + j1.235 A A Zin = Device input impedance as measured from RF input to ground. Zload = Test circuit impedance as measured from drain to ground. Device Output Under Test Matching Network Z Z in load Figure 16. Series Equivalent Input and Load Impedance (cid:151) Alternate Characterization for Driver/Pre-Driver Performance MWIC930R1 MWIC930GR1 RF Device Data Freescale Semiconductor 11

NOTES N N O O I I T T A A M M R R O O F F N N I I E E V V I I H H C C R R A A MWIC930R1 MWIC930GR1 RF Device Data 12 Freescale Semiconductor

NOTES N N O O I I T T A A M M R R O O F F N N I I E E V V I I H H C C R R A A MWIC930R1 MWIC930GR1 RF Device Data Freescale Semiconductor 13

PACKAGE DIMENSIONS MWIC930R1 MWIC930GR1 RF Device Data 14 Freescale Semiconductor

MWIC930R1 MWIC930GR1 RF Device Data Freescale Semiconductor 15

MWIC930R1 MWIC930GR1 RF Device Data 16 Freescale Semiconductor

MWIC930R1 MWIC930GR1 RF Device Data Freescale Semiconductor 17

MWIC930R1 MWIC930GR1 RF Device Data 18 Freescale Semiconductor

MWIC930R1 MWIC930GR1 RF Device Data Freescale Semiconductor 19

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