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  • 型号: MOC3041TVM
  • 制造商: Fairchild Semiconductor
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MOC3041TVM产品简介:

ICGOO电子元器件商城为您提供MOC3041TVM由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MOC3041TVM价格参考。Fairchild SemiconductorMOC3041TVM封装/规格:光隔离器 - 三端双向可控硅,SCR输出, Optoisolator Triac Output 4170Vrms 1 Channel 6-DIP。您可以下载MOC3041TVM参考资料、Datasheet数据手册功能说明书,资料中有MOC3041TVM 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

隔离器

描述

OPTOCOUPLER TRIAC 400V 6DIP ZC三极与 SCR 输出光电耦合器 6Pin400V Optocoupler Zero Cross Triac Dr

产品分类

光隔离器 - 三端双向可控硅,SCR输出

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

光耦合器/光电耦合器,三极与 SCR 输出光电耦合器,Fairchild Semiconductor MOC3041TVM-

数据手册

点击此处下载产品Datasheet

产品型号

MOC3041TVM

产品种类

三极与 SCR 输出光电耦合器

供应商器件封装

6-DIP

关断状态下输出电压-VDRM

400 V

功率耗散

250 mW

包装

管件

单位重量

864 mg

商标

Fairchild Semiconductor

安装类型

通孔

封装

Bulk

封装/外壳

6-DIP(0.400",10.16mm)

封装/箱体

PDIP-6

工厂包装数量

1000

最大工作温度

+ 85 C

最大触发电流

15 mA

最小工作温度

- 40 C

标准包装

1,000

正向电压

1.25 V

正向电流

60 mA

每芯片的通道数量

1 Channel

电压-断态

400V

电压-隔离

7500Vpk

电流-DC正向(If)

60mA

电流-保持(Ih)

400µA

电流-栅极触发(Igt)(最大值)

15mA

电流-输出/通道

-

系列

MOC3041TM

绝缘电压

5250 Vrms

输出类型

交流过零三端双向可控硅开关

输出设备

PhotoTriac

通道数

1

零交叉电压

20 V

零交叉电路

With Zero-Crossing Circuit

零件号别名

MOC3041TVM_NL

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PDF Datasheet 数据手册内容提取

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

M O C August 2015 3 0 3 X M , MOC3031M, MOC3032M, MOC3033M, M O MOC3041M, MOC3042M, MOC3043M C 3 0 6-Pin DIP Zero-Cross Triac Driver Output Optocoupler 4 X (250/400 Volt Peak) M — 6 Features Description - P i • Simplifies Logic Control of 115 VAC Power The MOC303XM and MOC304XM devices consist of a n • Zero Voltage Crossing GaAs infrared emitting diode optically coupled to a D I • dv/dt of 2000 V/μs Typical, 1000 V/μs Guaranteed monolithic silicon detector performing the function of a P zero voltage crossing bilateral triac driver. Z • Peak Blocking Voltage e – 250 V, MOC303XM They are designed for use with a triac in the interface of ro – 400 V, MOC304XM logic systems to equipment powered from 115 VAC -C lines, such as teletypewriters, CRTs, solid-state relays, r • Safety and Regulatory Approvals o industrial controls, printers, motors, solenoids and s – UL1577, 4,170 VACRMS for 1 Minute consumer appliances, etc. s – DIN EN/IEC60747-5-5 T r i a Applications c D • Solenoid/Valve Controls r i v • Lighting Controls e r • Static Power Switches O • AC Motor Drives u t • Temperature Controls p u • E.M. Contactors t O • AC Motor Starters p • Solid State Relays to c o Schematic Package Outlines u p l e r ( 2 5 0 ANODE 1 6 MAIN TERM. /4 0 0 V o CATHODE 2 5 NC* l t P e ZERO a N/C 3 CROSSING 4 MAIN TERM. k CIRCUIT ) *DO NOT CONNECT (TRIAC SUBSTRATE) Figure 1. Schematic Figure 2. Package Outlines ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6

M O Safety and Insulation Ratings C 3 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit 0 3 data. Compliance with the safety ratings shall be ensured by means of protective circuits. X M Parameter Characteristics , M Installation Classifications per DIN VDE < 150 VRMS I–IV O 0110/1.89 Table 1, For Rated Mains Voltage < 300 V I–IV C RMS 3 Climatic Classification 40/85/21 0 4 X Pollution Degree (DIN VDE 0110/1.89) 2 M Comparative Tracking Index 175 — 6 - P Symbol Parameter Value Unit in D Input-to-Output Test Voltage, Method A, V x 1.6 = V , Type and Sample Test with t = 10 s, PartIiOaRl DMischarge <P R5 pC 1275 Vpeak IP m V Z PR Input-to-Output Test Voltage, Method B, V x 1.875 = V , e 100% Production Test with t = 1 s, PartiaIlO DRiMscharge < 5 pPCR 1594 Vpeak ro m - C V Maximum Working Insulation Voltage 850 V IORM peak r o VIOTM Highest Allowable Over-Voltage 6000 Vpeak s s External Creepage ≥ 7 mm T External Clearance ≥ 7 mm ri a c External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm D DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm r i v R Insulation Resistance at T , V = 500 V > 109 Ω e IO S IO r O u t p u t O p t o c o u p l e r ( 2 5 0 / 4 0 0 V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 2

M O Absolute Maximum Ratings C Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be 3 0 operable above the recommended operating conditions and stressing the parts to these levels is not recommended. 3 X In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. M The absolute maximum ratings are stress ratings only. T = 25°C unless otherwise specified. A , M Symbol Parameters Device Value Unit O C TOTAL DEVICE 3 0 TSTG Storage Temperature All -40 to +150 °C 4 X TOPR Operating Temperature All -40 to +85 °C M T Junction Temperature Range All -40 to +100 °C — J 260 for 6 T Lead Solder Temperature All °C - SOL 10 seconds P i n Total Device Power Dissipation at 25°C Ambient 250 mW P All D D Derate Above 25°C 2.94 mW/°C IP EMITTER Z e I Continuous Forward Current All 60 mA r F o - V Reverse Voltage All 6 V C R r Total Power Dissipation at 25°C Ambient 120 mW o P All s D s Derate Above 25°C 1.41 mW/°C T DETECTOR r i a MOC3031M c D MOC3032M 250 r i MOC3033M v V Off-State Output Terminal Voltage V e DRM MOC3041M r O MOC3042M 400 u t MOC3043M p u Peak Repetitive Surge Current t ITSM (PW = 100 μs, 120 pps) All 1 A O p Total Power Dissipation at 25°C Ambient 150 mW to PD All c Derate Above 25°C 1.76 mW/°C o u p l e r ( 2 5 0 / 4 0 0 V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 3

M O Electrical Characteristics C T = 25°C unless otherwise specified. 3 A 0 3 Individual Component Characteristics X M Symbol Parameters Test Conditions Device Min. Typ. Max. Unit , M O EMITTER C V Input Forward Voltage I = 30 mA All 1.25 1.50 V 3 F F 0 I Reverse Leakage Current V = 6 V All 0.01 100 μA 4 R R X M DETECTOR — Peak Blocking Current, IDRM1 Either Direction Rated VDRM, IF = 0(1) All 100 nA 6 - P VTM PEeithaekr O Dnir-eSctatitoen Voltage, ITM = 100 mA peak, IF = 0 All 1.8 3.0 V in D dv/dt Critical Rate of Rise of I = 0 (Figure 11)(2) All 1000 2000 V/μs IP Off-State Voltage F Z e r o Transfer Characteristics -C r Symbol DC Characteristics Test Conditions Device Min. Typ. Max. Unit o s MOC3031M s 15 T MOC3041M r i a Main Terminal MOC3032M c IFT LED Trigger Current Voltage = 3 V(3) MOC3042M 10 mA D r i MOC3033M v 5 e MOC3043M r O I Holding Current, All 400 μA u H Either Direction tp u t O Zero Crossing Characteristics p t Symbol Characteristics Test Conditions Device Min. Typ. Max. Unit o c o I = rated I , MT1-MT2 F FT u voltage above which device p VIH Inhibit Voltage will not trigger All 20 V le r off-state ( 2 Leakage in Inhibited I = rated I , rated V 5 I F FT DRM All 2 mA 0 DRM2 State off-state / 4 0 0 Isolation Characteristics V o l Symbol Parameter Test Conditions Device Min. Typ. Max. Unit t P V Isolation Voltage(4) t = 1 Minute All 4170 VAC e ISO RMS a k ) Notes: 1. Test voltage must be applied within dv/dt rating. 2. This is static dv/dt. See Figure 11 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only. 3. All devices are guaranteed to trigger at an I value less than or equal to max I . Therefore, recommended operating F FT I lies between max I (15 mA for MOC3031M and MOC3041M, 10 mA for MOC3032M and MOC3042M, 5 mA for F FT MOC3033M and MOC3043M) and absolute maximum I (60 mA). F 4. Isolation voltage, V , is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and ISO pins 4, 5 and 6 are common. ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 4

M O Typical Performance Curves C 3 0 3 X 1.6 800 IF = 30mA M 1.5 600 TA = 25°C , M O )V 1.4 )Am 400 C ( E ( T 3 G N 0 AT 1.3 ER 200 4 L R X O U V DRA 1.2 TA = -40°C C ETA 0 M — WRO 1.1 TA = 25°C TS-N -200 6 F O - - VF 1.0 TA = 85°C ,IMT -400 Pin -600 D 0.9 I P 0.80.1 1 10 100 -800-4 -3 -2 -1 0 1 2 3 4 Ze r IF - LED FORWARD CURRENT (mA) VTM, ON-STATE VOLTAGE (VOLTS) o - Figure 3. LED Forward Voltage vs. Forward Current Figure 4. On-State Characteristics C r o s s T 1.3 10000 ri a c D 1.2 )A 1000 riv n( T er D NE O EZILAMRON ,ITF 11..01 RRUC EGAKAEL ,MRD 11000 utput Opto I 1 0.9 c o u NORMALIZED TO TA = 25oC 0.1 pl 0.8-40 -20 TA, A0MBIENT2 0TEMPE4R0ATURE6 (0°C) 80 100 -40 -20 TA,0 AMBIEN2T0 TEMPE4R0ATURE 6(0oC) 80 100 er (25 Figure 5. Trigger Current vs. Temperature Figure 6. Leakage Current, I vs. Temperature 0 DRM / 4 0 0 V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 5

M O Typical Performance Curves (Continued) C 3 0 3 X 1.8 16 M NORMALIZED TO PWIN >> 100 μs , 1.6 )D 14 M EZ O L DEZ 1.4 IF = RATED IFT IAMRO 12 C30 ILAMRO 1.2 N( TNER 10 4XM N ,2M 1.0 RUC 8 — IRD 0.8 REG 6 6- G P 0.6 IRT DEL 4 in D 0.4 ,ITF 2 IP -40 -20 0 20 40 60 80 100 Z TA, AMBIENT TEMPERATURE (°C) 01 10 100 er o PWIN, LED TRIGGER PULSE WIDTH (μS) -C Figure 7. IDRM2 - Leakage in Inhibit State vs. Temperature Figure 8. LED Current Required to Trigger vs. LED Pulse Width r o s s T 3.2 1.3 ri a c 2.8 D )DEZILA 2.4 1.2 N O TRAM =A 2L5IZ°ECD TO rive M D 1.1 r R E ON 2.0 ZIL O ( T AM u NE 1.6 RO 1.0 tp RRUC G 1.2 N - VHNI 0.9 ut O N p IDLO 0.8 to H 0.8 c ,H o I 0.4 u p 0.7 l -40 -20 0 20 40 60 80 100 e 0.0 r -40 -20 0 20 40 60 80 100 TA, AMBIENT TEMPERATURE (°C) (2 TA, AMBIENT TEMPERATURE (°C) 5 0 Figure 9. Holding Current, IH vs. Temperature Figure 10. Inhibit Voltage vs. Temperature /4 0 0 V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 6

M O C 3 1. The mercury wetted relay provides a high speed repeated 0 3 pulse to the D.U.T. X M 2. 100x scope probes are used, to allow high speeds and , +250 for MOC303XM voltages. M +400 for MOC304XM O Vdc RTEST R = 10 kΩ 3. The worst-case condition for static dv/dt is established by C triggering the D.U.T. with a normal LED input current, then 3 PINUPLUSTE MWEERTCTUERDY CTEST X100 rtoe mbeo vginragd tuhael lcyu inrrcerneta. sTehde u vnatrili athbele DR.TUE.TST. caollnotwinsu tehse t od v/dt 04X RELAY DD..UU..TT.. SPCROOBPEE trigger in response to the applied voltage pulse, even after M the LED current has been removed. The dv/dt is then — decreased until the D.U.T stops triggering. τRC is 6 measured at this point and recorded. - Figure 11. Static dv/dt Test Circuit P i n APPLIED VOLTAGE Vmax = 250 V APPLIED VOLTAGE Vmax = 400 V DI WAVEFORM 158 V WAVEFORM 252 V P 0 VOLTS τRC dv/dt = 0.6τ3R VCmax = 1 R58C 0 VOLTS τRC dv/dt = 0.6τ3R VCmax = τ2 R52C Zero - Figure 12. Static dv/dt Test Waveform Figure 13. Static dv/dt Test Waveform C (MOC3031M, MOC3032M, MOC3033M) (MOC3041M, MOC3042M, MOC3043M) r o s s T r i Typical circuit (Fig 14, 15) for use when hot line switching is required. In this circuit the “hot” side of the line is switched a c and the load connected to the cold or neutral side. The load may be connected to either the neutral or hot line. D r i v Rin is calculated so that IF is equal to the rated IFT of the part, 5mA for the MOC3033M and MOC3043M, 10mA for the e MOC3032M and MOC3042M, or 15mA for the MOC3031M and MOC3041M. The 39 ohm resistor and 0.01μF r O capacitor are for snubbing of the triac and may or may not be necessary depending upon the particular triac and load u used. t p u t O Rin 1 6 180Ω Rin 1 6 360Ω p VCC HOT VCC HOT t 2 MOC3031M 5 2 MOC3041M 5 o MMOOCC33003323MM 39Ω * MMOOCC33004423MM 39Ω * co 3 4 115 VAC 3 4 240 VAC u 0.01 0.01 p 1 k 330 l e LOAD NEUTRAL LOAD NEUTRAL r ( *For highly inductive loads (power factor < 0.5), change this value to 360 ohms. *For highly inductive loads (power factor < 0.5), change this value to 360 ohms. 2 5 Figure 14. Hot-Line Switching Application Circuit Figure 15. Hot-Line Switching Application Circuit 0 (MOC3031M, MOC3032M, MOC3033M) (MOC3041M, MOC3042M, MOC3043M) /4 0 0 V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 7

M O C 3 0 3 X 115 VAC M , R1 D1 M O 1 6 C V CC 3 0 Rin 2 MOC3031M 5 SCR 4 MOC3032M X MOC3033M SCR M 3 4 180 — 6 R2 D2 -P i n LOAD D I P Figure 16. Inverse-Parallel SCR Driver Circuit Z (MOC3031M, MOC3032M, MOC3033M) e r o - C Suggested method of firing two, back-to-back SCR’s with a Fairchild triac driver. Diodes can be 1N4001; resistors, R1 r o and R2, are optional 1kΩ. s s T r i a c D r i v 240 VAC e r R1 D1 O u V 1 6 tp CC u Rin 2 MOC3041M 5 SCR t O MOC3042M p MOC3043M SCR 360 to 3 4 c o u R2 D2 p l e LOAD r ( 2 5 0 Figure 17. Inverse-Parallel SCR Driver Circuit / 4 (MOC3041M, MOC3042M, MOC3043M) 0 0 V o Suggested method of firing two, back-to-back SCR’s with a Fairchild triac driver. Diodes can be 1N4001; resistors, l t R1 and R2, are optional 330Ω. P e Note: a This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only. k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 8

M O Reflow Profile C 3 0 3 300 X 260°C M 280 , 260 M >245°C = 42 Sec O 240 C 3 220 0 4 200 X M 180 Time above — 160 183°C = 90 Sec °C 6 140 - P 120 in 100 1.822°C/Sec Ramp up rate D I P 80 Z 60 e r o 40 - C 33 Sec 20 r o 0 s s 0 60 120 180 270 360 T Time (s) ri a c Figure 18. Reflow Profile D r i v e r O u t p u t O p t o c o u p l e r ( 2 5 0 / 4 0 0 V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 9

M O Ordering Information(5) C 3 0 Part Number Package Packing Method 3 X MOC3031M DIP 6-Pin Tube (50 Units) M , MOC3031SM SMT 6-Pin (Lead Bend) Tube (50 Units) M O MOC3031SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) C MOC3031VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) 3 0 4 MOC3031SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) X M MOC3031SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) — MOC3031TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) 6 Note: - P 5. The product orderable part number system listed in this table also applies to the MOC3032M, MOC3033M, in MOC3041M, MOC3042M, and MOC3043M product families. D I P Z Marking Information e r o - C r o 1 s s T r MOC3031 2 i a c D V X YY Q 6 r i v e r O 3 4 5 u t p u Figure 19. Top Mark t O p Top Mark Definitions t o c 1 Fairchild Logo o u 2 Device Number p l e DIN EN/IEC60747-5-5 Option (only appears on component r 3 ordered with this option) ( 2 5 4 One-Digit Year Code, e.g., ‘5’ 0 / 4 5 Two-Digit Work Week, Ranging from ‘01’ to ‘53’ 0 0 6 Assembly Package Code V o l t P e a k ) ©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC303XM, MOC304XM Rev. 1.6 10

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MOC3041SVM MOC3041TVM MOC3041SM MOC3041M MOC3041VM MOC3041SR2VM MOC3041SR2M