图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: M57959L
  • 制造商: POWEREX
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

M57959L产品简介:

ICGOO电子元器件商城为您提供M57959L由POWEREX设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 M57959L价格参考。POWEREXM57959L封装/规格:PMIC - 栅极驱动器, Low-Side Gate Driver IC Non-Inverting Module。您可以下载M57959L参考资料、Datasheet数据手册功能说明书,资料中有M57959L 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)

描述

IC GATE DRVR FOR IGBT MOD

产品分类

PMIC - MOSFET,电桥驱动器 - 外部开关

品牌

Powerex Inc

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

M57959L

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

供应商器件封装

模块

其它名称

835-1106
M57959L-ND

包装

散装

安装类型

通孔

封装/外壳

14-SIP(12 引线)

工作温度

-20°C ~ 60°C

延迟时间

800ns

标准包装

13

电压-电源

14 V ~ 15 V

电流-峰值

2A

输入类型

非反相

输出数

1

配置

-

配置数

1

高压侧电压-最大值(自举)

1200V

推荐商品

型号:MC33395EW

品牌:NXP USA Inc.

产品名称:集成电路(IC)

获取报价

型号:EL7158ISZ-T7A

品牌:Renesas Electronics America Inc.

产品名称:集成电路(IC)

获取报价

型号:IR4428

品牌:Infineon Technologies

产品名称:集成电路(IC)

获取报价

型号:LTC4441IMSE#PBF

品牌:Linear Technology/Analog Devices

产品名称:集成电路(IC)

获取报价

型号:IR2113SPBF

品牌:Infineon Technologies

产品名称:集成电路(IC)

获取报价

型号:LTC4444EMS8E-5#PBF

品牌:Linear Technology/Analog Devices

产品名称:集成电路(IC)

获取报价

型号:LM5101BMA

品牌:Texas Instruments

产品名称:集成电路(IC)

获取报价

型号:IR2101

品牌:Infineon Technologies

产品名称:集成电路(IC)

获取报价

样品试用

万种样品免费试用

去申请
M57959L 相关产品

AUIRS2113S

品牌:Infineon Technologies

价格:

FAN7383M

品牌:ON Semiconductor

价格:

ISL6615ACBZ-T

品牌:Renesas Electronics America Inc.

价格:

HIP4082IP

品牌:Renesas Electronics America Inc.

价格:

MIC4422ZN

品牌:Microchip Technology

价格:

LTC1982ES6#TRMPBF

品牌:Linear Technology/Analog Devices

价格:

E-L6569D

品牌:STMicroelectronics

价格:

MIC4426ZM

品牌:Microchip Technology

价格:

PDF Datasheet 数据手册内容提取

M57959L Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Gate Driver Hybrid Integrated Circuit Block Diagram For Driving IGBT Modules 4 VCC Description: 14 DCeirtceucitt 1 Detect Pin M57959L is a hybrid integrated 185V circuit designed for driving n-channel Timer and Reset Circuit IGBT modules in any gate amplifier Interface 5 VOUT application. This device operates as an isolation amplifier for these – modules and provides the required 13 GateC Sirhcuutidtown 8 Fault Output electrical isolation between the in- Opto-Coupler 6 VEE put and output with an opto-coupler. Short circuit protection is provided Outline Drawing by a built in desaturation detector. Dimensions in mm 43.0 A fault signal is provided if the short circuit protection is activated. 22.0 Features: h Built in high CMRR opto- 4.5 – 1.5 coupler (V : Typical CMR 30kV/ms, Min. 15kV/ms) 0.55 – 0.2 0.35 – 0.2 2.54 3.5 11.0 h Electrical Isolation between 5.5 1 2.54 · 13 = 33.02 14 5.5 8.5 input and output with opto- couplers (V = 2500, iso Test Circuit V for 1 min.) RMS R h TTL compatible input interface 4.7 kV VIN h Two supply drive topology 8 1 D1 h Built in short circuit protection 5 DZ1 30RV VOUT tr tf 90% circuit with a pin for fault output ext V 4 IN + + 47m F VCC 0 10% Application: 14 + + To drive IGBT modules for inverter, 13 6 47m F VVEE = 15 V tPLH tPHL AC Servo systems, UPS, CVCF TTL, etc. CC inverter, and welding applications. VIN = 5V VEE = 10V R = RECOMMENDED ext VALUE Recommended Modules: V = 600V Series CES (up to 200A Class) V = 1200V Series CES (up to 100A Class) V = 1400V Series CES (up to 100A Class) 149

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 M57959L Hybrid IC for IGBT Gate Driver Absolute Maximum Ratings, T ~ 20(cid:176) C to 70(cid:176) C unless otherwise specified a Item Symbol Test Conditions Limit Units Supply Voltage* VCC DC 18 Volts VEE DC -15 Volts Input Voltage VI -1 ~ 7 Volts Output Voltage VO Output Voltage “H” VCC Volts Output Current IOHP Pulse Width 2m s, f = 20kHz -2 Amperes IOLP Pulse Width 2m s, f = 20kHz 2 Amperes Output Current IOH f = 20kHz, 50% Duty Cycle 0.2 Amperes Isolation Voltage VRMS Sinewave Voltage 60kHz, 1 min. 2500 Volts Junction Temperature Tj 85 (cid:176) C Operating Temperature Topg (Differs from H/C Condition) -20 ~ 60 (cid:176) C Storage Temperature Tstg -25 ~ 100 (cid:176) C Fault Output Current IFO 20 mA Input Voltage VR1 50 Volts *20 Volts £ VCC + VEE £ 28 Volts Electrical Characteristics, T = 25(cid:176) C, V = 15V, -V = 10V unless otherwise specified a CC EE Characteristics Symbol Test conditions Min. Typ. Max. Unit Supply Voltage VCC Recommended Range 14 15 — Volts VEE Recommended Range -7 — -10 Volts Pull-up Voltage on Input Side VIN Recommended Range 4.75 5.00 5.25 Volts “H” Input Current IIH VIN = 5V, R = 185W — 16 — mA “H” Output Voltage VOH 13 14 — Volts “L” Output Voltage VOL -8 -9 — Volts Internal Power Dissipation PD f = 20kHz, — 0.86 — Watts Module 200A, 600V IGBT “L-H” Propagation Time tPLH VI = 0 to 4V, Tj – 85(cid:176) C — 0.8 1.5 m s “L-H” Rise Time tr VI = 0 to 4V, Tj – 85(cid:176) C — 0.5 1.0 m s “H-L” Propagation Time tPHL VI = 0 to 4V, Tj – 85(cid:176) C — 1.0 1.5 m s “H-L” Rise Time tr VI = 0 to 4V, Tj – 85(cid:176) C — 0.3 0.6 m s Reset Time of Protection tRESET 1 — 2 ms Fault Output Current IFO — 5 — mA SC Voltage VSC 15 — — Volts 150