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  • 型号: KA7915ATU
  • 制造商: Fairchild Semiconductor
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ICGOO电子元器件商城为您提供KA7915ATU由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 KA7915ATU价格参考¥2.19-¥8.16。Fairchild SemiconductorKA7915ATU封装/规格:PMIC - 稳压器 - 线性, Linear Voltage Regulator IC Negative Fixed 1 Output -15V 1A TO-220-3。您可以下载KA7915ATU参考资料、Datasheet数据手册功能说明书,资料中有KA7915ATU 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC REG LDO -15V 1A TO220-3线性稳压器 Negative Voltage Reg 3Terminal 1a

产品分类

PMIC - 稳压器 - 线性

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

电源管理 IC,线性稳压器,Fairchild Semiconductor KA7915ATU-

数据手册

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产品型号

KA7915ATU

PCN设计/规格

点击此处下载产品Datasheet

PSRR/纹波抑制—典型值

60 dB

产品种类

线性稳压器

供应商器件封装

TO-220-3

包装

管件

单位重量

1.800 g

商标

Fairchild Semiconductor

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-3

封装/箱体

TO-220-3

工作温度

0°C ~ 125°C

工厂包装数量

50

最大工作温度

+ 125 C

最大输入电压

- 30 V

最小工作温度

0 C

最小输入电压

- 17.5 V

极性

Negative

标准包装

50

电压-跌落(典型值)

2V @ 1A

电压-输入

可下调至 -35V

电压-输出

-15V

电流-输出

1A

电流-限制(最小值)

-

稳压器拓扑

负,固定式

稳压器数

1

系列

KA7915

线路调整率

150 mV

负载调节

150 mV

输出电压

- 15 V

输出电流

1 A

输出端数量

1

输出类型

Fixed

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PDF Datasheet 数据手册内容提取

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

K A 7 9 September 2014 X X / K A KA79XX / KA79XXA / LM79XX 7 9 X 3-Terminal 1 A Negative Voltage Regulator X A / L M 7 9 Features Description X X • Output Current in Excess of 1 A The KA79XX / KA79XXA / LM79XX series of three-termi- — • Output Voltages of: -5 V, -6 V, -8 V, -9 V, -12 V, -15 V, nal negative regulators are available in a TO-220 pack- age with several fixed output voltages, making them 3 -18 V, -24 V - useful in a wide range of applications. Each type employs T • Internal Thermal Overload Protection e internal current limiting, thermal shutdown, and safe r • Short-Circuit Protection m operating area protection. i • Output Transistor Safe Operating Area Compensation n a TO-220 l 1 Input A N e g a t 1 iv e 1. GND 2. Input 3. Output V o l t a g Ordering Information e R e Output Voltage Operating g Product Number Package Packing Method Tolerance Temperature u l a KA7905TU to r KA7906TU KA7908TU KA7909TU ±4% KA7912TU TO-220 KA7915TU (Dual Gauge) KA7918TU KA7924TU KA7912ATU Rail 0 to +125°C ±2% KA7915ATU LM7905CT LM7908CT LM7909CT TO-220 LM7910CT ±4% (Single Gauge) LM7912CT LM7915CT LM7918CT © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1

K A Block Diagram 7 9 X X GND / K R1 A 7 9 VOLTAGE X REFERENCE R2 X A OOuutptut / + L M Q1 7 - 9 Q2 X X PROTECTION — I1 I2 CIRCUITRY 3 - Rsc T e r m In i Input n a l 1 Figure 1. Block Diagram A N e g Absolute Maximum Ratings a t i v Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- e ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- V o tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The l t absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. a A g e Symbol Parameter Value Unit R e VI Input Voltage -35 V g RθJC Thermal Resistance, Junction-Case(1) 5 °C/W ula RθJA Thermal Resistance, Junction-Air(1, 2) 65 °C/W to r T Operating Temperature Range 0 to +125 °C OPR T Storage Temperature Range - 65 to +150 °C STG Notes: 1. Thermal resistance test board, size: 76.2 mm x 114.3 mm x 1.6 mm(1S0P), JEDEC standard: JESD51-3, JESD51-7. 2. Assume no ambient airflow. © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1 2

K A Electrical Characteristics (KA7905 / LM7905) 7 9 (V = -10 V, I = 500 mA, 0°C ≤ T ≤ +125°C, C = 2.2 μF, C = 1 μF; unless otherwise specified.) X I O J I O X Symbol Parameter Conditions Min. Typ. Max. Unit / K T = +25°C -4.80 -5.00 -5.20 A J 7 VO Output Voltage IO = 5 mA to 1 A, PO ≤ 15 W, -4.75 -5.00 -5.25 V 9X V = -7 V to -20 V X I A ΔVO Line Regulation(3) TJ = +25°C VVI == --87 VV ttoo --1225 VV 385 15000 mV / L I M T = +25°C, I = 5 mA to 1.5 A 10 100 7 ΔV Load Regulation(3) J O mV 9 O T = +25°C, I = 250 mA to 750 mA 3 50 X J O X IQ Quiescent Current TJ = +25°C 3 6 mA — ΔIQ QChuaiensgceent Current IVO == -58 m VA t oto - 215 A V 00..1005 00..8500 mA 3-T I e r ΔVo/ΔT Temperature Coefficient I = 5 mA -0.4 mV/°C m of V O i D n VN Output Noise Voltage f = 10 Hz to 100 kHz, TA = +25°C 40 μV al 1 RR Ripple Rejection f = 120 Hz, ΔVI = 10 V 54 60 dB A VD Dropout Voltage TJ = +25°C, IO = 1 A 2 V N ISC Short-Circuit Current TJ = +25°C, VI = -35 V 300 mA eg a IPK Peak Current TJ = +25°C 2.2 A ti v e Note: V 3. Load and line regulation are specified at constant junction temperature. Changes in V due to heating effects must o O l be taken into account separately. Pulse testing with low duty is used. ta g e R e g u l a t o r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1 3

K A Electrical Characteristics (KA7906) 7 9 (V = -11 V, I = 500 mA, 0°C ≤ T ≤ +125°C, C = 2.2 μF, C = 1 μF; unless otherwise specified.) X I O J I O X Symbol Parameter Conditions Min. Typ. Max. Unit / K T = +25°C -5.75 -6.00 -6.25 A J 7 VO Output Voltage IO = 5 mA to 1 A, PO ≤ 15 W, -5.70 -6.00 -6.30 V 9X V = -9 V to -21 V X I A ΔVO Line Regulation(4) TJ = +25°C VVI == --98 VV ttoo --1235 VV 150 16200 mV / L I M T = +25°C, I = 5 mA to 1.5 A 10 120 7 ΔV Load Regulation(4) J O mV 9 O T = +25°C, I = 250 mA to 750 mA 3 60 X J O X IQ Quiescent Current TJ = +25°C 3 6 mA — ΔIQ QChuaiensgceent Current IVO == -58 m VA t oto - 215 A V 00..1005 10..3500 mA 3-T I e r ΔVo/ΔT Temperature Coefficient I = 5 mA -0.5 mV/°C m of V O i D n VN Output Noise Voltage f = 10 Hz to 100 kHz, TA =+25°C 130 μV al 1 RR Ripple Rejection f = 120 Hz, ΔVI = 10 V 54 60 dB A VD Dropout Voltage TJ = +25°C, IO = 1 A 2 V N ISC Short-Circuit Current TJ = +25°C, VI = -35 V 300 mA eg a IPK Peak Current TJ = +25°C 2.2 A ti v e Note: V 4. Load and line regulation are specified at constant junction temperature. Changes in V due to heating effects must o O l be taken into account separately. Pulse testing with low duty is used. ta g e R e g u l a t o r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1 4

K A Electrical Characteristics (KA7908 / LM7908) 7 9 (V = -14 V, I = 500 mA, 0°C ≤ T ≤ +125°C, C = 2.2 μF, C =1 μF; unless otherwise specified.) X I O J I O X Symbol Parameter Conditions Min. Typ. Max. Unit / K T = +25°C -7.7 -8.0 -8.3 A J 7 VO Output Voltage IO = 5 mA to 1 A, PO ≤ 15 W, -7.6 -8.0 -8.4 V 9X V = -10 V to -23 V X I A ΔVO Line Regulation(5) TJ = +25°C VVI == --1101.5 V V t oto - -1275 VV 150 18600 mV / L I M T = +25°C, I = 5 mA to 1.5 A 12 160 7 ΔV Load Regulation(5) J O mV 9 O T = +25°C, I = 250 mA to 750 mA 4 80 X J O X IQ Quiescent Current TJ = +25°C 3 6 mA — ΔIQ QChuaiensgceent Current IVO == -51 m0.A5 Vto t1o A-25 V 00..0150 01..0500 mA 3-T I e r ΔVo/ΔT Temperature Coefficient I = 5 mA -0.6 mV/°C m of V O i D n VN Output Noise Voltage f = 10 Hz to 100 kHz, TA = +25°C 175 μV al 1 RR Ripple Rejection f = 120 Hz, ΔVI = 10 V 54 60 dB A VD Dropout Voltage TJ = +25°C, IO = 1 A 2 V N ISC Short-Circuit Current TJ = +25°C, VI = -35 V 300 mA eg a IPK Peak Current TJ = +25°C 2.2 A ti v e Note: V 5. Load and line regulation are specified at constant junction temperature. Changes in V due to heating effects must o O l be taken into account separately. Pulse testing with low duty is used. ta g e R e g u l a t o r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1 5

K A Electrical Characteristics (KA7909 / LM7909) 7 9 (V = -15 V, I = 500 mA, 0°C ≤ T ≤ +125°C, C = 2.2 μF, C =1 μF; unless otherwise specified.) X I O J I O X Symbol Parameter Conditions Min. Typ. Max. Unit / K T = +25°C -8.7 -9.0 -9.3 A J 7 VO Output Voltage IO = 5 mA to 1 A, PO ≤ 15 W, -8.6 -9.0 -9.4 V 9X V = -1.5 V to -23 V X I A ΔVO Line Regulation(6) TJ = +25°C VVI == --1121 .V5 Vto t-o1 8-2 V6 V 150 19800 mV / L I M T = +25°C, I = 5 mA to 1.5 A 12 180 7 ΔV Load Regulation(6) J O mV 9 O T = +25°C, I = 250 mA to 750 mA 4 90 X J O X IQ Quiescent Current TJ = +25°C 3 6 mA — ΔIQ QChuaiensgceent Current IVO == -51 m1.A5 Vto t1o A-26 V 00..1005 10..0500 mA 3-T I e r ΔVo/ΔT Temperature Coefficient I = 5 mA -0.6 mV/°C m of V O i D n VN Output Noise Voltage f = 10 Hz to 100 kHz, TA = +25°C 175 μV al 1 RR Ripple Rejection f = 120 Hz, ΔVI = 10 V 54 60 dB A VD Dropout Voltage TJ = +25°C, IO = 1 A 2 V N ISC Short-Circuit Current TJ = +25°C, VI = -35 V 300 mA eg a IPK Peak Current TJ = +25°C 2.2 A ti v e Note: V 6. Load and line regulation are specified at constant junction temperature. Changes in V due to heating effects must o O l be taken into account separately. Pulse testing with low duty is used. ta g e R e g u l a t o r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1 6

K A Electrical Characteristics (LM7910) 7 9 (V = -17 V, I = 500 mA, 0°C ≤ T ≤ +125°C, C = 2.2 μF, C =1 μF; unless otherwise specified.) X I O J I O X Symbol Parameter Conditions Min. Typ. Max. Unit / K T = +25°C -9.6 -10.0 -10.4 A J 7 VO Output Voltage IO = 5 mA to 1A, Pd ≤ 15 W, -9.5 -10.0 -10.5 V 9X V = -12 V to -28 V X I A ΔVO Line Regulation(7) TJ = +25°C VVI == --1142 .V5 Vto t-o2 0-2 V8 V 162 210000 mV / L I M T = +25°C, 7 J 12 200 9 ΔVO Load Regulation(7) ITOJ == 5+ 2m5A°C to, 1.5 A 4 100 mV XX — I = 250 mA to 750 mA O IQ Quiescent Current TJ = +25°C 3 6 mA 3-T ΔIQ QChuaiensgceent Current IVO == -51 m2.A5 Vto t1o A-28 V 00..1005 10..0500 mA erm I i n Temperature Coefficient a ΔVo/ΔT of VO IO = 5 mA -1 mV/°C l 1 V Output Noise Voltage 10 Hz ≤ f ≤ 100 kHz, T = +25°C 280 μV A N A N RR Ripple Rejection f = 120 Hz, ΔV = 10 V 54 60 dB I e g VD Dropout Voltage TJ = +25°C, IO = 1 A 2 V a t ISC Short-Circuit Current TJ = +25°C, VI = -35 V 300 mA iv e IPK Peak Current TJ = +25°C 2.2 A V o Note: lt a 7. Load and line regulation are specified at constant junction temperature. Changes in V due to heating effects must g O e be taken into account separately. Pulse testing with low duty is used. R e g u l a t o r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1 7

K A Electrical Characteristics (KA7912 / LM7912) 7 9 (V = -19 V, I = 500 mA, 0°C ≤ T ≤ +125°C, C = 2.2 μF, C = 1 μF; unless otherwise specified.) X I O J I O X Symbol Parameter Conditions Min. Typ. Max. Unit / K T = +25°C -11.5 -12.0 -12.5 A J 7 VO Output Voltage IO = 5 mA to 1 A, PO ≤ 15 W -11.4 -12.0 -12.6 V 9X V = -15.5 V to -27 V X I A ΔVO Line Regulation(8) TJ = +25°C VVI == --1164 .V5 Vto t-o2 -23 V0 V 162 122400 mV / L I M T = +25°C, I = 5 mA to 1.5 A 12 240 7 ΔV Load Regulation(8) J O mV 9 O T = +25°C, I = 250 mA to 750 mA 4 120 X J O X IQ Quiescent Current TJ = +25°C 3 6 mA — ΔIQ QChuaiensgceent Current IVO == -51 m4.A5 Vto t1o A-30 V 00..1005 10..0500 mA 3-T I e r ΔVo/ΔT Temperature Coefficient I = 5 mA -0.8 mV/°C m of V O i D n VN Output Noise Voltage f = 10 Hz to 100 kHz, TA = +25°C 200 μV al 1 RR Ripple Rejection f = 120 Hz, ΔVI = 10 V 54 60 dB A VD Dropout Voltage TJ = +25°C, IO = 1 A 2 V N ISC Short-Circuit Current TJ = +25°C, VI = -35 V 300 mA eg a IPK Peak Current TJ = +25°C 2.2 A ti v e Note: V 8. Load and line regulation are specified at constant junction temperature. Changes in V due to heating effects must o O l be taken into account separately. Pulse testing with low duty is used. ta g e R e g u l a t o r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1 8

K A Electrical Characteristics (KA7915 / LM7915) 7 9 (V = -23 V, I = 500 mA, 0°C ≤T ≤ +125°C, C = 2.2 μF, C = 1 μF; unless otherwise specified.) X I O J I O X Symbol Parameter Conditions Min. Typ. Max. Unit / K T = +25°C -14.40 -15.00 -15.60 A J 7 VO Output Voltage IO = 5 mA to 1 A, PO ≤ 15 W -14.25 -15.00 -15.75 V 9X V = -18 V to -30 V X I A ΔVO Line Regulation(9) TJ = +25°C VVI == --2107 .V5 Vto t-o2 -63 V0 V 162 310500 mV / L I M T = +25°C, I = 5 mA to 1.5 A 12 300 7 ΔV Load Regulation(9) J O mV 9 O T = +25°C, I = 250 mA to 750 mA 4 150 X J O X IQ Quiescent Current TJ = +25°C 3 6 mA — ΔIQ QChuaiensgceent Current IVO == -51 m7.A5 Vto t1o A-30 V 00..1005 10..0500 mA 3-T I e r ΔVo/ΔT Temperature Coefficient I = 5 mA -0.9 mV/°C m of V O i D n VN Output Noise Voltage f = 10 Hz to 100 kHz, TA = +25°C 250 μV al 1 RR Ripple Rejection f = 120 Hz, ΔVI = 10 V 54 60 dB A VD Dropout Voltage TJ = +25°C, IO = 1 A 2 V N ISC Short-Circuit Current TJ = +25°C, VI = -35 V 300 mA eg a IPK Peak Current TJ = +25°C 2.2 A ti v e Note: V 9. Load and line regulation are specified at constant junction temperature. Changes in V due to heating effects must o O l be taken into account separately. Pulse testing with low duty is used. ta g e R e g u l a t o r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1 9

K A Electrical Characteristics (KA7918 / LM7918) 7 9 (V = -27 V, I = 500 mA, 0°C ≤ T ≤ +125°C, C = 2.2 μF, C =1 μF, unless otherwise specified.) X I O J I O X Symbol Parameter Conditions Min. Typ. Max. Unit / K T = +25°C -17.3 -18.0 -18.7 A J 7 VO Output Voltage IO = 5 mA to 1 A, PO ≤ 15 W -17.1 -18.0 -18.9 V 9X V = -22.5 V to -33 V X I A ΔVO Line Regulation(10) TJ = +25°C VVI == --2214 VV ttoo --3330 VV 185 316800 mV / L I M T = +25°C, I = 5 mA to 1.5 A 15 360 7 ΔV Load Regulation(10) J O mV 9 O T = +25°C, I = 250 mA to 750 mA 5 180 X J O X IQ Quiescent Current TJ = +25°C 3 6 mA — ΔIQ QChuaiensgceent Current IVO == -52 m1 AV ttoo 1-3 A3 V 00..1005 10..0500 mA 3-T I e r ΔVo/ΔT Temperature Coefficient I = 5 mA -1 mV/°C m of V O i D n VN Output Noise Voltage f = 10 Hz to 100 kHz, TA = +25°C 300 μV al 1 RR Ripple Rejection f = 120 Hz, ΔVI = 10 V 54 60 dB A VD Dropout Voltage TJ = +25°C, IO = 1 A 2 V N ISC Short-Circuit Current TJ = +25°C, VI = -35 V 300 mA eg a IPK Peak Current TJ = +25°C 2.2 A ti v e Note: V 10. Load and line regulation are specified at constant junction temperature. Changes in V due to heating effects must o O l be taken into account separately. Pulse testing with low duty is used. ta g e R e g u l a t o r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1 10

K A Electrical Characteristics (KA7924) 7 9 (V = -33 V, I = 500 mA, 0°C ≤ T ≤ +125°C, C = 2.2 μF, C = 1 μF; unless otherwise specified.) X I O J I O X Symbol Parameter Conditions Min. Typ. Max. Unit / K T = +25°C -23.0 -24.0 -25.0 A J 7 VO Output Voltage IO = 5 mA to 1 A, PO ≤ 15 W, -22.8 -24.0 -25.2 V 9X V = -27 V to -38 V X I A ΔVO Line Regulation(11) TJ = +25°C VVI == --3207 VV ttoo --3368 VV 185 148800 mV / L I M T = +25°C, I = 5 mA to 1.5 A 15 480 7 ΔV Load Regulation(11) J O mV 9 O T = +25°C, I = 250 mA to 750 mA 5 240 X J O X IQ Quiescent Current TJ = +25°C 3 6 mA — ΔIQ QChuaiensgceent Current IVO == -52 m7 AV ttoo 1-3 A8 V 00..1005 10..0500 mA 3-T I e r ΔVo/ΔT Temperature Coefficient I = 5 mA -1 mV/°C m of V O i D n VN Output Noise Voltage f = 10 Hz to 100 kHz, TA = +25°C 400 μV al 1 RR Ripple Rejection f = 120 Hz, ΔVI = 10 V 54 60 dB A VD Dropout Voltage TJ = +25°C, IO = 1 A 2 V N ISC Short-Circuit Current TJ = +25°C, VI = -35 V 300 mA eg a IPK Peak Current TJ = +25°C 2.2 A ti v e Note: V 11. Load and line regulation are specified at constant junction temperature. Changes in V due to heating effects must o O l be taken into account separately. Pulse testing with low duty is used. ta g e R e g u l a t o r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1 11

K A Electrical Characteristics (KA7912A) 7 9 (V = -19 V, I = 500 mA, 0°C ≤ T ≤ +125°C, C = 2.2 μF, C =1 μF; unless otherwise specified.) X I O J I O X Symbol Parameter Conditions Min. Typ. Max. Unit / K T = +25°C -11.75 -12.00 -12.25 A J 7 VO Output Voltage IO = 5 mA to 1 A, PO ≤ 15 W, -11.50 -12.00 -12.50 V 9X V = -15.5 V to -27 V X I A VI = -14.5 V to -27 V, 12 120 / Io = 1 A L TJ = +25°C M V= -16 V to -22 V, ΔVO Line Regulation(12) IoI = 1 A 6 60 mV 79 X V = -14.8 V to -30 V 12 120 X I — V = -16 V to -22 V, Io = 1 A 12 120 I ΔV Load Regulation(12) TJ = +25°C, IO = 5 mA to 1.5 A 12 150 mV 3-T O T = +25°C, I = 250 mA to 750 mA 4 75 e J O r m I Quiescent Current T = +25°C 3 6 mA Q J i n ΔIQ QChuaiensgceent Current IVO == -51 m5 AV ttoo 1-3 A0 V 00..1005 10..0500 mA al 1 I A ΔVo/ΔT Temperature Coefficient I = 5 mA -0.8 mV/°C N of V O D e g VN Output Noise Voltage f = 10 Hz to 100 kHz, TA = +25°C 200 μV a t RR Ripple Rejection f = 120 Hz, ΔVI = 10 V 54 60 dB iv e VD Dropout Voltage TJ = +25°C, IO = 1 A 2 V V o ISC Short-Circuit Current TJ = +25°C, VI = -35 V 300 mA lt a IPK Peak Current TJ = +25°C 2.2 A g e Note: R e 12. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must g u be taken into account separately. Pulse testing with low duty is used. l a t o r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1 12

K A Electrical Characteristics (KA7915A) 7 9 (V = -23 V, I = 500 mA, 0°C ≤ T ≤ +125°C, C = 2.2 μF, C = 1 μF; unless otherwise specified.) X I O J I O X Symbol Parameter Conditions Min. Typ. Max. Unit / K T = +25°C -14.7 -15.0 -15.3 A J 7 VO Output Voltage IO = 5 mA to 1 A, PO ≤ 15 W, -14.4 -15.0 -15.6 V 9X V = -18 V to -30 V X I A VI = -17.5 V to -30 V, 12 150 / Io = 1 A L TJ = +25°C M V = -20 V to -26 V, ΔVO Line Regulation(13) IoI = 1 A 6 75 mV 79 X V = -17.9 V to -30 V 12 150 X I — V = -20 V to -26 V, Io = 1 A 6 150 I ΔV Load Regulation(13) TJ = +25°C, IO = 5 mA to 1.5 A 12 150 mV 3-T O T = +25°C, I = 250 mA to 750 mA 4 75 e J O r m I Quiescent Current T = +25°C 3 6 mA Q J i n ΔIQ QChuaiensgceent Current IVO == -51 m8.A5 Vto t1o A-30 V 00..1005 10..0500 mA al 1 I A ΔVo/ΔT Temperature Coefficient I = 5 mA -0.9 mV/°C N of V O D e g VN Output Noise Voltage f = 10 Hz to 100 kHz, TA = +25°C 250 μV a t RR Ripple Rejection f = 120 Hz, ΔVI = 10 V 54 60 dB iv e VD Dropout Voltage TJ = +25°C, IO = 1 A 2 V V o ISC Short-Circuit Current TJ = +25°C, VI = -35 V 300 mA lt a IPK Peak Current TJ = +25°C 2.2 A g e Note: R e 13. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must g u be taken into account separately. Pulse testing with low duty is used. l a t o r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1 13

K A Typical Performance Characteristics 7 9 X X / K A 5.1 15 7 OV]u5.05 VIoi=n=401m0VA V] Lo13 Io=1.5A 9X tuge[-pt 5 n[m aRde119 XA VlVoltatao4.95 atio gatuil 57 / L g[Vutput -e] 4.9 VIoi=n=10205mVA Regul o[Vmn] 13 Io=0.75A M79 O 4.85 d -1 X a -3 X 4.8 Lo -5 — -40 -25 0 25 50 75 100 125 25 -40 -25 0 25 50 75 100 125 TA, Ambient Temperature [oC] TA, Ambient Temperature [oC] 3- T e r m Figure 2. Output Voltage Figure 3. Load Regulation i n a l 1 A N 5 4 e g A]4.5 3.5 a uiescent Current [m123...1234555 DVl[V] Dropout Voltage [V]12..55123 Io=1A tive Voltage Q0.5 0.5 R 0 0 e -40 -25 0 25 50 75 100 125 5 -40 -25 0 25 50 75 100 125 g TA, Ambient Temperature [oC] TA, Ambient Temperature [oC] ul a t o r Figure 4. Quiescent Current Figure 5. Dropout Voltage 0.6 0.55 Sh ent[A]oCritr0.004..545 urrcui0.35 Ct 0.3 uit Cu0.25 c 0.2 Cirrre0.15 hort n[At]0.00.51 S 0 -0.05 -0.1 -40 -25 0 25 50 75 100 125 TA, Ambient Temperature [oC] Figure 6. Short-Circuit Current © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1 14

K A Typical Applications 7 9 X X / K A 7 2.2 μF + 1 μF 9X + X C Co A I 1 / L 2 KA79XX 3 M Input LM79XX Output 7 9 X X — 3 Figure 7. Negative Fixed Output Regulator -T e r m i n a l 1 +15 V 1 KA7812 3 +12 V A LM7812 N + 2 Co+ eg C1 0.33 μF 1N4001 a 1 μF * ti v e GND V o + 2.2 μF 1 μF+ lt a C1 Co 1N4001 g 1 * e R -15 V 2 KLMA77991122 3 -12 V eg u l a t o r Figure 8. Split Power Supply (±12 V / 1 A) Notes: 14.To specify an output voltage, substitute voltage value for "XX". 15.C is required if the regulator is located an appreciable distance from the power supply filter. For value given, I capacitor must be solid tantalum. If aluminium electronics are used, at least ten times the value shown should be selected. 16. C improves stability and transient response. If large capacitors are used, a high-current diode from input to O output (1N4001 or similar) should be introduced to protect the device from momentary input short circuit. © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1 15

K A Physical Dimensions 7 9 X X / K A 7 9 X X A / L M 7 9 X X — 3 - T e r m i n a l 1 A N e g a t i v e V o l t a g e R e g u l a t o r Figure 9. TO-220, MOLDED, 3-LEAD, JEDEC VARIATION AB (ACTIVE) © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com KA79XX / KA79XXA / LM79XX Rev. 1.1.1 16

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