IDW75E60 Fast Switching Emitter Controlled Diode Features:  600VEmContechnology  Fastrecovery  Softswitching  Lowreverserecoverycharge  Lowforwardvoltage  175°Cjunctionoperatingtemperature  Easyparalleling  Pb-freeleadplating;RoHScompliant  CompleteproductspectrumandPSpiceModels: http://www.infineon.com/emcon/ PG-TO247-3 Applications:  Welding  Motordrives Type V I V T Marking Package RRM F F,Tj=25°C j,max IDW75E60 600V 75A 1.65V 175C D75E60 PG-TO247-3 MaximumRatings Parameter Symbol Value Unit Repetitivepeakreversevoltage V 600 V RRM Continuousforwardcurrent T =25C 120 C I A T =90C F 82 C T =100C 75 C Surgenonrepetitiveforwardcurrent I 220 A FSM T =25C,t =10ms,sinehalfwave C p Maximumrepetitiveforwardcurrent I 225 A FRM T =25C,t limitedbyt ,D=0.5 C p j,max Powerdissipation T =25C 300 C P W T =90C tot 170 C T =100C 150 C Operatingjunctiontemperature T -40…+175 j Storagetemperature T -55...+150 stg °C Solderingtemperature T 260 1.6mm(0.063in.)fromcasefor10s S IFAG IPC TD VLS 1 Rev.2.2 20.09.2013

IDW75E60 ThermalResistance Parameter Symbol Conditions Max.Value Unit Characteristic Thermalresistance, R 0.5 K/W thJC junction–case Thermalresistance, R 40 thJA junction–ambient ElectricalCharacteristic,atT =25C,unlessotherwisespecified j Value Parameter Symbol Conditions Unit min. typ. max. StaticCharacteristic Collector-emitterbreakdownvoltage V I =0.25mA 600 - - V RRM R Diodeforwardvoltage V I =75A F F T =25C - 1.65 2.0 j T =175C - 1.65 - j Reverseleakagecurrent I V =600V A R R T =25C - - 40 j T =175C - - 2500 j DynamicElectricalCharacteristics Diodereverserecoverytime t T =25C - 121 - ns rr j Diodereverserecoverycharge Q V =400V, I =75A, - 2.4 - µC rr R F Diodepeakreverserecoverycurrent I dI /dt=1460A/µs - 38.5 - A rr F Diodepeakrateoffallofreverse dI /dt - 921 - A/µs rr recoverycurrentduringt b Diodereverserecoverytime t T =125C - 155 - ns rr j Diodereverserecoverycharge Q V =400V, I =75A, - 4.4 - µC rrm R F Diodepeakreverserecoverycurrent I dI /dt=1460A/µs - 46.6 - A rr F Diodepeakrateoffallofreverse dI /dt - 960 - A/µs rr recoverycurrentduringt b Diodereverserecoverytime t T =175C - 182 - ns rr j Diodereverserecoverycharge Q V =400V, I =75A, - 5.8 - µC rrm R F Diodepeakreverserecoverycurrent I dI /dt=1460A/µs - 56.2 - A rr F Diodepeakrateoffallofreverse dI /dt - 1013 - A/µs rr recoverycurrentduringt b IFAG IPC TD VLS 2 Rev.2.2 20.09.2013

IDW75E60 300W 120A 250W N O NT 90A TI E PA 200W RR SI U S C DI D R 150W R 60A E A W W O R P O 100W F P,tot I,F 30A 50W 0W 0A 25°C 50°C 75°C 100°C 125°C 150°C 25°C 75°C 125°C TC,CASETEMPERATURE TC,CASETEMPERATURE Figure1. Powerdissipationasafunctionof Figure2. Diodeforwardcurrentasa casetemperature functionofcasetemperature (T 175C) (T 175C) j j 200A T=25°C I =150A J 2.0V F 175°C T E N G RE 150A TA 1.5V 75A R L U O C V D D R R 37.5A WA 100A WA 1.0V R R O O F F I,F V,F 50A 0.5V 0A 0.0V 0°C 50°C 100°C 150°C 0V 1V 2V VF,FORWARDVOLTAGE TJ,JUNCTIONTEMPERATURE Figure3. Typicaldiodeforwardcurrentas Figure4. Typicaldiodeforwardvoltageasa afunctionofforwardvoltage functionofjunctiontemperature IFAG IPC TD VLS 3 Rev.2.2 20.09.2013

IDW75E60 5µC 200ns TJ=175°C GE TJ=175°C E R M A TI H 4µC Y C R 150ns Y E R V E O V C O 3µC E C R E E 100ns R S E ER T =25°C RS 2µC V J E E V T =25°C R E J R t,rr 50ns Q,rr 1µC 0µC 0ns 1000A/µs 1500A/µs 1000A/µs 1500A/µs diF/dt,DIODECURRENTSLOPE diF/dt,DIODECURRENTSLOPE Figure5. Typicalreverserecoverytimeas Figure6. Typicalreverserecoverycharge afunctionofdiodecurrentslope asafunctionofdiodecurrent (V =400V,I =75A, slope R F DynamictestcircuitinFigureE) (V =400V,I =75A, R F DynamictestcircuitinFigureE) T =175°C -1200A/µs T =175°C J J 60A NT LL NT-1000A/µs E A E T =25°C R 50A F R J R F R U O U C E C-800A/µs RY 40A AT RY E R E OV TJ=25°C AK OV-600A/µs EC 30A PE EC R R E E D E S O S-400A/µs ER 20A DI ER EV dt, EV I,Rrr 10A di/rrOFR-200A/µs 0A 0A/µs 1000A/µs 1500A/µs 1000A/µs 1500A/µs diF/dt,DIODECURRENTSLOPE diF/dt,DIODECURRENTSLOPE Figure7. Typicalreverserecoverycurrent Figure8. Typicaldiodepeakrateoffallof asafunctionofdiodecurrent reverserecoverycurrentasa slope functionofdiodecurrentslope (V =400V,I =75A, (V =400V,I =75A, R F R F DynamictestcircuitinFigureE) DynamictestcircuitinFigureE) IFAG IPC TD VLS 4 Rev.2.2 20.09.2013

IDW75E60 D=0.5 E C N A D E 0.2 P10-1K/W M I AL 0.1 R,(K/W) , (s) M 0.0556 0.1495 R E 0.05 0.1757 0.02797 H T 0.02 0.12374 3.623E-3 T 0.12192 3.276E-4 N E 0.01 0.02305 2.635E-5 NSI10-2K/W R1 R2 A R T ,C ZthJ singlepulse C1=1/R1 C2=2/R2 1µs 10µs 100µs 1ms 10ms 100ms tP,PULSEWIDTH Figure9. Diodetransientthermal impedanceasafunctionofpulse width (D=t /T) P IFAG IPC TD VLS 5 Rev.2.2 20.09.2013

IDW75E60 IFAG IPC TD VLS 6 Rev.2.2 20.09.2013

IDW75E60 Publishedby InfineonTechnologiesAG 81726Munich,Germany ©2013InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectual propertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearest InfineonTechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthe typesinquestion,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesor systemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswritten approvalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethe failureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyor effectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthe humanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonable toassumethatthehealthoftheuserorotherpersonsmaybeendangered. IFAG IPC TD VLS 7 Rev.2.2 20.09.2013

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