TVS Diodes Transient Voltage Suppressor Diodes ESD103-B1-02 Series Bi-directional Femto Farad Capacitance TVS Diode ESD103-B1-02ELS ESD103-B1-02EL Data Sheet Revision 1.3, 2014-06-12 Final Power Management & Multimarket

Edition 2014-06-12 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

ESD103-B1-02 Series Bi-directional Femto Farad Capacitance TVS Diode 1 Bi-directional Femto Farad Capacitance TVS Diode 1.1 Features • ESD/Transient protection of RF and ultra-high speed signal lines according to: – IEC61000-4-2: ±10kV (contact) • Extremely low capacitance C =0.09pF (typical) at f= 1GHz L • Maximum working voltage: V =±15V RWM • Very low reverse current: I <0.1nA (typ.) R • Very low series inductance down to 0.2nH typical (TSSLP-2-4) • Extremely small form factor down to 0.62x0.32x0.31mm² • Pb-free package (RoHS compliant) 1.2 Application Examples [4] • ESD protection in RF applications • Tailored for connectivity applications • WLAN, GPS antenna, DVB T/H, Bluetooth Class 1 and 2 • Automated Meter Reading 1.3 Product Description Pin 1 Pin 2 Pin 1 Pin 1 marking (lasered) TSLP-2 Pin 1 Pin 2 Pin 2 TSSLP-2 a) Pin configuration b) Schematic diagram Figure1 Pin configuration and Schematic diagram Table1 Ordering Information Type Package Configuration Marking code ESD103-B1-02ELS TSSLP-2-4 1 line, bi-directional V ESD103-B1-02EL TSLP-2-20 1 line, bi-directional V Final Data Sheet 4 Revision 1.3, 2014-06-12

ESD103-B1-02 Series Characteristics 2 Characteristics Table2 Maximum Ratings at T =25°C, unless otherwise specified A Parameter Symbol Values Unit Min. Typ. Max. ESD contact discharge1) V -10 – 10 kV ESD Operating temperature T -55 – 125 °C OP Storage temperature T -65 – 150 °C stg 1) V according to IEC61000-4-2 (R=330Ω, C=150pF discharge network) ESD Attention:Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.1 Electrical Characteristics at T = 25 °C, unless otherwise specified A (cid:10)(cid:5) (cid:10) (cid:17)(cid:17) (cid:10) (cid:15)(cid:16)(cid:17) (cid:11)(cid:2) (cid:11)(cid:2) (cid:2)(cid:5) (cid:19)(cid:19)(cid:19) (cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:4)(cid:7)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:7)(cid:12)(cid:13)(cid:14) (cid:11)(cid:10) (cid:10)(cid:5) (cid:19)(cid:19)(cid:19) (cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:4)(cid:7)(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11) (cid:11)(cid:10) (cid:2)(cid:7) (cid:19)(cid:19)(cid:19) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:10)(cid:7) (cid:19)(cid:19)(cid:19) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11) (cid:2) (cid:7)(cid:18) (cid:2)(cid:15)(cid:16)(cid:17)(cid:2)(cid:3)(cid:4) (cid:2)(cid:6) (cid:2)(cid:7)(cid:8)(cid:9) (cid:10)(cid:7)(cid:8)(cid:9) (cid:2)(cid:7) (cid:2)(cid:5) (cid:10)(cid:7)(cid:8)(cid:9) (cid:2)(cid:7)(cid:8)(cid:9) (cid:2)(cid:6) (cid:2)(cid:3)(cid:4) (cid:2)(cid:5)(cid:18) (cid:2) (cid:15)(cid:16)(cid:17) (cid:7)(cid:12)(cid:13)(cid:14) (cid:19)(cid:19)(cid:19) (cid:19)(cid:20)(cid:18)(cid:6)(cid:21)(cid:22)(cid:16)(cid:8)(cid:4)(cid:13)(cid:15)(cid:22)(cid:15)(cid:11)(cid:6)(cid:18)(cid:16)(cid:13) (cid:2)(cid:7)(cid:8)(cid:9) (cid:19)(cid:19)(cid:19) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:5)(cid:3)(cid:4)(cid:26)(cid:22)(cid:18)(cid:12)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13)(cid:8)(cid:21)(cid:6)(cid:27)(cid:28) (cid:2)(cid:3)(cid:4) (cid:19)(cid:19)(cid:19) (cid:25)(cid:4)(cid:22)(cid:12)(cid:12)(cid:13)(cid:4)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:11)(cid:10) (cid:2)(cid:6) (cid:19)(cid:19)(cid:19) (cid:24)(cid:3)(cid:10)(cid:7)(cid:22)(cid:18)(cid:12)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:2)(cid:5)(cid:18) (cid:19)(cid:19)(cid:19) (cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:4)(cid:7)(cid:8)(cid:16)(cid:10)(cid:6)(cid:21)(cid:23)(cid:22)(cid:18)(cid:12)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:11)(cid:2) (cid:7) (cid:2)(cid:7)(cid:18) (cid:19)(cid:19)(cid:19) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:16)(cid:10)(cid:6)(cid:21)(cid:23)(cid:22)(cid:18)(cid:12)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:11)(cid:2) (cid:12)(cid:13)(cid:14) (cid:11)(cid:10) (cid:2)(cid:15)(cid:16)(cid:17) (cid:19)(cid:19)(cid:19) (cid:25)(cid:29)(cid:30)(cid:8)(cid:9)(cid:3)(cid:10)(cid:11)(cid:6)(cid:12)(cid:13) (cid:10)(cid:17)(cid:17) (cid:10)(cid:7)(cid:8)(cid:9) (cid:19)(cid:19)(cid:19) (cid:14)(cid:13)(cid:9)(cid:13)(cid:4)(cid:15)(cid:13)(cid:8)(cid:5)(cid:3)(cid:4)(cid:26)(cid:22)(cid:18)(cid:12)(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11)(cid:8)(cid:21)(cid:6)(cid:27)(cid:28) (cid:10) (cid:10)(cid:17)(cid:17) (cid:19)(cid:19)(cid:19) (cid:30)(cid:13)(cid:6)(cid:26)(cid:8)(cid:23)(cid:17)(cid:10)(cid:15)(cid:13)(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11) (cid:15)(cid:16)(cid:17) (cid:10)(cid:15)(cid:16)(cid:17) (cid:19)(cid:19)(cid:19) (cid:25)(cid:29)(cid:30)(cid:8)(cid:16)(cid:17)(cid:4)(cid:4)(cid:13)(cid:18)(cid:11) (cid:10)(cid:7) (cid:19)(cid:22)(cid:3)(cid:7)(cid:13)(cid:31) !(cid:6)(cid:4)(cid:6)(cid:16)(cid:11)(cid:13)(cid:4)(cid:22)(cid:15)(cid:11)(cid:22)(cid:16)(cid:31) (cid:17)(cid:4)(cid:9)(cid:13)(cid:31)(cid:5)(cid:22)(cid:11)!(cid:31)(cid:15)(cid:18)(cid:6)(cid:23)"(cid:6)(cid:16)(cid:26)(cid:31)#(cid:22)$(cid:7)(cid:22)(cid:4)(cid:13)(cid:16)(cid:11)(cid:22)(cid:3)(cid:18)(cid:6)(cid:10)(cid:28)(cid:15)(cid:9)(cid:12) Figure2 Definitions of electrical characteristics Final Data Sheet 5 Revision 1.3, 2014-06-12

ESD103-B1-02 Series Characteristics Table3 DC Characteristics at T =25°C, unless otherwise specified A Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Reverse working voltage V -15 – 15 V RWM Trigger voltage V – 21 – V I =1mA, from Pin 1 Trig BR to Pin 2 – 21 – I =1mA, from Pin 2 BR to Pin 1 Reverse current I – <0.1 50 nA V =15V R R Table4 RF Characteristics at T =25°C, unless otherwise specified A Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Line capacitance C – 0.13 0.2 pF V =0V, f=1MHz L R – 0.09 – V =0V, f= 1GHz R Series inductance L nH S – 0.2 – ESD103-B1-02ELS – 0.4 – ESD103-B1-02EL Table5 ESD Characteristics at T = 25°C, unless otherwise specified A Parameter Symbol Values Unit Note / TestCondition Min. Typ. Max. Clamping voltage1) V – 20 – V I =1A CL TLP – 36 – I =8A TLP – 48 – I =16A TLP Dynamic resistance1) R – 1.8 – Ω t =100ns DYN p 1) ANSI/ESD STM5.5.1 - Electrostatic Discharge Sensitive Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z =50Ω, t =100ns, t =0.6ns, I and V averaging window: t =30ns to t =60ns, extraction of 0 p r TLP TLP 1 2 dynamic resistance using least squares fit of TLP characteristic between I =2A and I =14.1A. Please refer to TLP1 TLP2 Application Note AN210[1]. Final Data Sheet 6 Revision 1.3, 2014-06-12

ESD103-B1-02 Series Typical Characteristics 3 Typical Characteristics At T =25°C, unless otherwise specified A -3 10 -4 10 -5 10 -6 10 -7 10 ] A [ R 10-8 I -9 10 -10 10 -11 10 -12 10 -20 -15 -10 -5 0 5 10 15 20 V [V] R Figure3 Reverse current I =f(V ) R R 0.2 0.18 0.16 0.14 f=1MHz 0.12 ] F p 0.1 f=1GHz [ L C 0.08 0.06 0.04 0.02 0 -20 -15 -10 -5 0 5 10 15 20 V [V] R Figure4 Line capacitance C =f(V ), f=1MHz L R Final Data Sheet 7 Revision 1.3, 2014-06-12

ESD103-B1-02 Series Typical Characteristics 0.2 0.18 0.16 0.14 0.12 ] F p 0.1 [ L C 0.08 0.06 0.04 0.02 0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 f [GHz] Figure5 Line capacitance: C =f(f), V =0V L R Final Data Sheet 8 Revision 1.3, 2014-06-12

ESD103-B1-02 Series Typical Characteristics ESD103-B1-02ELS R 20 DYN 10 15 7.5 R = 1.78 Ω DYN 10 5 5 2.5 ] V k [ C ] E A VI [ 0 0 P t L n T e I al v ui q E -5 -2.5 -10 -5 R = 1.78 Ω DYN -15 -7.5 -20 -10 -80 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 V [V] TLP Figure6 Clamping voltage (TLP): I =f(V ) according ANSI/ESDSTM5.5.1-Electrostatistic TLP TLP Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z =50Ω, t =100ns, t =0.6ns, I and V average window: t =30ns to t =60ns, 0 p r TLP TLP 1 2 extraction of dynamic resistance using squares fit to TLP characteristics between I =2A TLP1 and I =14.1A. Please refer to Application Note AN210[1] TLP2 Final Data Sheet 9 Revision 1.3, 2014-06-12

ESD103-B1-02 Series Typical Characteristics 350 Scope: 6 GHz, 20 GS/s 300 250 V = 319 V CL-max-peak V = 43 V 200 CL-30ns-peak ] V [ 150 L C V 100 50 0 -50 -50 0 50 100 150 200 250 300 350 400 450 t [ns] p Figure7 Clamping voltage at +8kV discharge according IEC61000-4-2 (R=330Ω, C=150pF) 50 0 -50 -100 ] V [ -150 L C V -200 V = -319 V CL-max-peak V = -41 V -250 CL-30ns-peak -300 Scope: 6 GHz, 20 GS/s -350 -50 0 50 100 150 200 250 300 350 400 450 t [ns] p Figure8 Clamping voltage at -8kV discharge according IEC61000-4-2 (R=330Ω, C=150pF) Final Data Sheet 10 Revision 1.3, 2014-06-12

ESD103-B1-02 Series Package Information 4 Package Information 4.1 TSSLP-2-4 [2] Top view Bottom view 0.31+-00..0021 0.32±0.05 2 5 55 ±0.0 0.3 62 0. 1 Cathode 0.05 MAX. 0.26±0.0351) 1)35 0 marking 0. ± 2 0. 1) Dimension applies to plated terminals TSSLP23PO V01 Figure9 TSSLP-2-4 Package outline 0.32 0.24 0.27 0.19 4 1 0. 2 7 6 5 0. 0. 9 1 9 0. 0.24 0.1 Copper Solder mask Stencil apertures TSSLP-2-1,-2-FP V02 Figure10 TSSLP-2-4 Footprint g 4 0.35 Tape type Ex Ey Punched Tape 0.43 0.73 Ey Embossed Tape 0.37 0.67 8 Deliveries can be both tape types (no selection possible). Specification allows identical processing (pick & place) by users. Cathode Ex marking TSSLP-2-1,-2-TP V03 Figure11 TSSLP-2-4 Packing Type code 1 Pin 1 marking TSSLP-2-3, -4-MK V01 Figure12 TSSLP-2-4 Marking (example) Final Data Sheet 11 Revision 1.3, 2014-06-12

ESD103-B1-02 Series Package Information 4.2 TSLP-2-20 [2] Top view Bottom view 0.31+0.01 -0.02 0.05 MAX. 0.6±0.05 5 2 0 0.65±0. 1 1±0.05 Pin 1 0.5±0.0351) 1)35 0 marking 0. ± 5 2 1) Dimension applies to plated terminals 0. TSLP-2-19, -20-PO V01 Figure13 TSLP-2-20 Package outline 0.6 5 0.45 8 3 2 0. 0. 3 0. 3 1 9 0. 8 3 0.35 0.28 0. Copper Solder mask Stencil apertures TSLP-2-19, -20-FP V01 Figure14 TSLP-2-20 Footprint 4 0.4 Pin 1 marking 16 1. 8 0.76 TSLP-2-19, -20-TP V02 Figure15 TSLP-2-20 Packing Type code 12 Pin 1 marking TSLP-2-19, -20-MK V01 Figure16 TSLP-2-20 Marking (example) Final Data Sheet 12 Revision 1.3, 2014-06-12

ESD103-B1-02 Series References References [1] Infineon AG - Application Note AN210: Effective ESD Protection Design at System Level using VF-TLP Characterization Methodology [2] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages [3] Tero, Ranta, Juha Ellä, Helena Pohjonen: Antenna Switch Linearity Requirements for GSM/WCDMA Mobile Phone Front-Ends. Nokia Technology Platforms, P.O.Box 86, FIN-24101 SALO. [4] Infineon AC - Application Note AN327: ESD101-B1 / ESD103-B1, Bi-directional Ultra Low Capacitance Transient Voltage Suppression Diodes for High Power RF Applications. Final Data Sheet 13 Revision 1.3, 2014-06-12

ESD103-B1-02 Series Revision History: Revision 1.2, 2013-07-22 Page or Item Subjects (major changes since previous revision) Revision 1.3, 2014-06-12 6 Table5) updated Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™, PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYOYUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-06-09 Final Data Sheet 3 Revision 1.3, 2014-06-12

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