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  • 型号: EE-SX1088
  • 制造商: Omron Electronics LLC
  • 库位|库存: xxxx|xxxx
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EE-SX1088产品简介:

ICGOO电子元器件商城为您提供EE-SX1088由Omron Electronics LLC设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 EE-SX1088价格参考。Omron Electronics LLCEE-SX1088封装/规格:光学传感器 - 光断续器 - 槽型 - 晶体管输出, Optical Sensor Transmissive 0.134" (3.4mm) Phototransistor PCB Mount。您可以下载EE-SX1088参考资料、Datasheet数据手册功能说明书,资料中有EE-SX1088 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

传感器,变送器

描述

OPTO SENSOR 3.4MM TRANS光学开关(透射型,光电晶体管输出) PHOTO MICROSENSOR

产品分类

光学传感器 - 光断续器 - 槽型 - 晶体管输出

品牌

Omron Electronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

光学开关(透射型,光电晶体管输出),Omron Electronics EE-SX1088-

数据手册

点击此处下载产品Datasheet

产品型号

EE-SX1088

上升时间

4 us

下降时间

4 us

产品种类

光学开关(透射型,光电晶体管输出)

光圈宽度

0.5 mm

其它名称

EE-SX1088-ND
EESJ5108R
EESX1088
EESX1088Q
OR1066

其它有关文件

点击此处下载产品Datasheet

功率耗散

100 mW

包装

散装

响应时间

4µs, 4µs

商标

Omron Electronics

安装类型

通孔

安装风格

Through Hole

封装/外壳

PCB 安装

工作温度

-25°C ~ 85°C

工厂包装数量

100

感应方式

Transmissive, Slotted

感应方法

可传导的

感应距离

3.4 mm

最大工作温度

+ 85 C

最大集电极电流

20 mA

最小工作温度

- 25 C

标准包装

100

槽宽

3.4 mm

波长

940 nm

特色产品

http://www.digikey.cn/product-highlights/zh/nonamplified-photomicrosensors/52959

电压-集射极击穿(最大值)

30V

电流-DC正向(If)

50mA

电流-集电极(Ic)(最大值)

20mA

类型

无放大

系列

EE-SX1088

输出设备

Phototransistor

输出配置

光电晶体管

集电极—发射极最大电压VCEO

30 V

零件号别名

367400 EESX1088Q EESX1863A

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PDF Datasheet 数据手册内容提取

Photomicrosensor (Transmissive) EE-SX1088 ■ Dimensions ■ Features Note:All units are in millimeters unless otherwise indicated. •General-purpose model with a 3.4-mm-wide slot. (cid:129)Mounts to PCBs or connects to connectors. (cid:129)High resolution with a 0.5-mm-wide aperture. 25±0.2 Two, R1 19±0.15 (cid:129)OMRON’s XK8-series Connectors can be connected without sol- dering. Contact your OMRON representative for information on 5±0.2 6±0.2 obtaining XK8-series Connectors. (cid:129)RoHS Compliant. Two, 3.2±0.2 dia. holes Four, C0.3 Two, C2 ■ Absolute Maximum Ratings (Ta = 25°C) 0.5±0.1 0.5±0.1 Item Symbol Rated value 6.5±0.1 (Optical axis) Emitter Forward current I 50 mA (seenote 1) 10±0.2 F 8.4±0.1 7.2±0.2 Pulse forward current I 1 A (seenote2) FP 2.5±0.1 Four, 0.5 Reverse voltage V 4 V 3±0.4 Four, 0.25 R Detector Collector–Emitter V 30 V CEO voltage Cross section BB Cross section AA Emitter–Collector V --- ECO voltage Collector current I 20 mA C Internal Circuit Collector dissipation P 100 mW (seenote 1) C Ambient Operating T –25°C to 85°C K C Unless otherwise specified, the opr temperature tolerances are as shown below. Storage T –30°C to 100°C stg Soldering temperature T 260°C (see note 3) A E Dimensions Tolerance sol 3 mm max. ±0.3 Note:1. Refer to the temperature rating chart if the ambient temper- Terminal No. Name 3 < mm ≤ 6 ±0.375 ature exceeds 25°C. A Anode 6 < mm ≤ 10 ±0.45 2. The pulse width is 10 μs maximum with a frequency of 100Hz. K Cathode 3. Complete soldering within 10 seconds. C Collector 10 < mm ≤ 18 ±0.55 E Emitter 18 < mm ≤ 30 ±0.65 ■ Ordering Information Description Model Photomicrosensor (transmissive) EE-SX1088 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated voltage V 0.15 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE (sat) F L Peak spectral sensitivity wavelength λ 850 nm typ. V = 10 V P CE Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Photomicrosensor (Transmissive) EE-SX1088 121

■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) A) IF mW) mA) TVaC E= = 2 150°C V d current I (mF PC dissipation P (C ard current I (F TTTaaa === −273500°°CC°C current I (mA)L orwar ector Forw Light F oll C Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA) Light Current vs. Collector−Emitter Relative Light Current vs. Dark Current vs. Ambient Voltage Characteristics (Typical) Ambient Temperature Character- Temperature Characteristics istics (Typical) (Typical) Ta = 25°C %) IVFC =E 2=0 5 m VA V0 ClEx = 10 V A) (L Light current I (mL IIIIFFFF ==== 43250000 mmmmAAAA ative light current I ark current I (nA)D IF = 10 mA Rel D Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resis- Sensing Position Characteristics Sensing Position Characteristics tance Characteristics (Typical) (Typical) (Typical) 120 VTaC C= = 2 55° VC %) IVTFaC = E= 2= 20 15 m0°C AV 100 IVTFaC = E= 2= 20 15 m0°C AV μnse time tr, tf (s) (e light current IL (oCpetincatel ra oxfi s) ght current I (%)L 864000 d (Center of optical axis) Respo Relativ ative li 20 el R 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance RL (kΩ) Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output 122 Photomicrosensor (Transmissive) EE-SX1088

MEMO Photomicrosensor (Transmissive) EE-SX1088

All sales are subject to Omron Electronic Components LLC standard terms and conditions of sale, which can be found at http://www.components.omron.com/components/web/webfiles.nsf/sales_terms.html ALL DIMENSIONS SHOWN ARE IN MILLIMETERS. To convert millimeters into inches, multiply by 0.03937. To convert grams into ounces, multiply by 0.03527. OMRON ELECTRONIC OMRON ON-LINE COMPONENTS LLC Global - http://www.omron.com 55 E. Commerce Drive, Suite B USA - http://www.components.omron.com Schaumburg, IL 60173 847-882-2288 Cat. No. X305-E-1 10/10 Specifications subject to change without notice Printed in USA Photomicrosensor (Transmissive) EE-SX1088

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