Photomicrosensor (Transmissive) EE-SX1081 Be sure to read Precautions on page25. ■ Dimensions ■ Features Note:All units are in millimeters unless otherwise indicated. (cid:129)General-purpose model with a 5-mm-wide slot. (cid:129)PCB mounting type. (cid:129)High resolution with a 0.5-mm-wide aperture. ■ Absolute Maximum Ratings (Ta = 25°C) Four, C0.3 13.7±0.3 Item Symbol Rated value 5+0.1 Emitter Forward current I 50 mA F 0.5±0.1 Two, C1±0.3 2.5±0.2 (seenote 1) Pulse forward cur- I 1 A FP rent (seenote2) (Optical axis) 7.5±0.2 8.5±0.1 10±0.2 6.5±0.1 Reverse voltage VR 4 V Detector Collector–Emitter V 30 V CEO voltage F0.o5u±r0, .1 6.2±0.5 Four, 0.25±0.1 Emitter–Collector VECO --- voltage (10.5) Collector current I 20 mA C Collector dissipa- P 100 mW Cross section BB Cross section AA C tion (seenote 1) Ambient tem- Operating Topr –25°C to 85°C Internal Circuit perature Storage Tstg –30°C to 100°C K C Soldering temperature Tsol 260°C Unless otherwise specified, the (see note 3) tolerances are as shown below. Note:1. Refer to the temperature rating chart if the ambient temper- A E Dimensions Tolerance ature exceeds 25°C. 3 mm max. ±0.3 2. The pulse width is 10 μs maximum with a frequency of Terminal No. Name 3 < mm ≤ 6 ±0.375 100Hz. A Anode 3. Complete soldering within 10 seconds. 6 < mm ≤ 10 ±0.45 K Cathode 10 < mm ≤ 18 ±0.55 C Collector E Emitter 18 < mm ≤ 30 ±0.65 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value Condition Emitter Forward voltage V 1.2 V typ., 1.5 V max. I = 30 mA F F Reverse current I 0.01 μA typ., 10 μA max. V = 4 V R R Peak emission wavelength λ 940 nm typ. I = 20 mA P F Detector Light current I 0.5 mA min., 14 mA max. I = 20 mA, V = 10 V L F CE Dark current I 2 nA typ., 200 nA max. V = 10 V, 0 lx D CE Leakage current I --- --- LEAK Collector–Emitter saturated volt- V (sat) 0.1 V typ., 0.4 V max. I = 20 mA, I = 0.1 mA CE F L age Peak spectral sensitivity wave- λ 850 nm typ. V = 10 V P CE length Rising time tr 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L Falling time tf 4 μs typ. V = 5 V, R = 100 Ω, I = 5 mA CC L L 50 EE-SX1081 Photomicrosensor (Transmissive)

■ Engineering Data Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical) orward current I (mA)F PIFC ector dissipation P (mW)C Forward current I (mA)F TTTaaa === 27−503°°0CC°C Light current I (mA)L TVaC E= = 2 150°C V F oll C Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA) Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics (Typical) (Typical) Ta = 25°C %) IVFC =E 2=0 5 m VA V0 ClEx = 10 V urrent I (mA)L IIIFFF === 543000 mmmAAA ht current I (L ent I (nA)D ht c IF = 20 mA e lig curr Lig ativ ark IF = 10 mA Rel D Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Response Time vs. Load Resist- Sensing Position Characteristics Sensing Position Characteristics ance Characteristics (Typical) (Typical) (Typical) 120 VTaC C= = 2 55° VC %) VITFaC = E= 2= 20 15 m0°C AV %) 100 ITVFaC = E= 2= 20 15 m0°C AV μResponse time tr, tf (s) (Relative light current IL (oCpetincatel ra oxfi s) elative light current I (L86420000 d (Center of optical axis) R 0 −2.0 −1.5 −1.0 −0.5 0 0.5 1.0 1.5 2.0 Load resistance RL (kΩ) Distance d (mm) Distance d (mm) Response Time Measurement Circuit Input 90 % Output 10 % Input Output EE-SX1081 Photomicrosensor (Transmissive) 51

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