RPI-0128 Photointerrupter, Ultraminiature SMD type Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Applications D) Forward current IF 30 mA ut (LE Reverse voltage VR 5 V DDVSCC((DDiiggiittaall vsitdeeaol ccaammeerraa)) np Power dissipation PD 80 mW I Digital handy phone )or Collector-emitter voltage VCEO 30 V Output(photo-transist ECCmoollillteeteccttroo-crr ocpluloerwcreteonrr t dviossltiapgaetion VPIECCCO 438.005 mmVWA 1)F Uelatratumriensiature SMD type. 2) Gap 1.2mm. Operating temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +85 °C Electrical and optical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Inputcharac-teristics FRoervwearsrde vcoulrtraegnet VIRF 1−.2 1.−35 11.05 μVA IVF=R=55mVA Outputcharac-teristics DPeaarkk csuernresnititvity wavelength ICλEPO −− 80−0 0−.1 nμmA VCE=10V − Collector current IC1 5.0 − 25 mA VCE=5V, IF=20mA cs IC2 1.0 − 5 mA VCE=5V, IF=5mA Transfercharacteristi CRoelslepcotnosr-ee tmimiteter RFsaaistllue tr itamimtieoen voltage VCtEtrf(sat) −−− 11−00 0−−.4 μμVss IVF=CC2=05mVA, ,I FI=C=200.m1mA,A RL=100Ω Infrared lightemitterdiode CPeuat-ko flfi gfrhet qeumeinttcinyg wavelength λfCP −− 8150 −− MnHmz ∗IF N=5onm-cAoherent Infrared light emitting diode used. Phototransistor MReasxpimonusme stiemnesitivity wavelength trλ Ptf −− 81000 −− nμms ∗V TCCh=is5 pVro, dIuCc=t1 ism nAot, dReLs=ig1n0e0d Ωto be prot−ected against electromagnetic wave. Electrical and optical characteristics curves %)120 35 20 ( TIVE COLLECTOR CURRENT : Ic12468000000 d mAFORWARD CURRENT : I ()F11223050505 mA)FORWARD CURRENT : I(F 112648 TTTaaa===−−−222222777555005555555550000°°°°°°°°°°°°°°°CCCCCCCCCCCCCCC A EL 0 0 R 0 0.5 1 1.5 2 0-25 0 25 50 75 100 0 0.5 1.0 1.5 2.0 DISTANCE : d (mm) AMBIENT TEMPERATURE : Ta (°C) FORWARD VOLTAGE : VF (V) Fig.1 Relative output current vs. Fig.3 Forward current vs. forward distance ( ) Fig.2 Forward current falloff voltage %)120 W) %)140 RELATIVE COLLECTOR CURRENT : Ic(1024680000000 0.4 0.8 1.2 d1.6 OWER DISSIPATION / /P(mOLLECTOR POWER DISSIPTION : PDC 112468020000000 −20 PD0 PC 20 40 60 80 100 RELATIVE COLLECTOR CURRENT : Ic (112468020000000-25 0 III2FFF5===222555000mmmmmmAAAAAA50 V7C5E=5V100 DISTANCE : d (mm) PC AMBIENT TEMPERATURE : Ta (°C) AMBIENT TEMPERATURE : Ta (°C) Fig.4 Relative output current vs. Fig.5 Power dissipation / collector power Fig.6 Relative output vs. ambient distance ( ) dissipation vs. ambient temperature temperature

Dimensions (Unit : mm) Notes: 1. Unspecified tolerance 2.5±0.15 shall be ±0.2 . 2. Dimension in parenthesis are show for reference. 1 0. ± 1.6 er nt e c al 1.2±0.15 c C0.3 2-0.1 34) Opti (0.2) 1) A 0. 0. ( ( Gate 6 0.2±1.80.1 0. +0.10.05-0.05 65) 0. ( 5 0.4 A' A-A' Cross section 2 3 6 4 0. 1. 1 4 0.9 2 Internal connection diagram Anode Collector Cathode Emitter 14 800 VCC=5V 1000 Ta=−275255005°°°°°CCCCC (mA)OR CURRENT : IC 116802 μs)ONSE TIME : t(r 347650000000000 IC=0.1mA tr tf (nA)CURRENT : ICEO 110100 VVVCCCEEE===231000VVV LLECT 4 RESP 200 DARK CO 2 VCE=5V 100 0.1 Ta=25°C 0 0 5 10 15 20 01 10 100 −25 0 25 50 75 100 FORWARD CURRENT : IF (mA) LOAD RESISTANCE : RL (kΩ) AMBIENT TEMPERATURE : Ta (°C) Fig.7 Collector current vs. Fig.8 Response time vs. Fig.9 Dark current vs. forward current load resistance ambient temperature 16 Input VCC A)14 IF=20mA m IF=5mA (URRENT : IC 11802 15mA RL IOnpuutptut 90% R C 10mA Output 10% 20mA O 6 CT td LLE 4 5mA tr tf CO 2 td : Delay time tr : Rise time (time for output current to rise from 0 10% to 90% of peak current) 0 2 4 6 8 10 tf : Fall time (time for output current to fall from 90% COLLECTOR TO EMITTER VOLTAGE: VCE (V) to 10% of peak current) 2010.07 Rev.B Fig.10 Output characteristics Fig.11 Response time measurement circuit

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