DPG20C300PN HiPerFRED² V = 300V RRM I =2x 10A FAV t = 35ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG20C300PN Backside: isolated 1 2 3 Features / Advantages: Applications: Package: TO-220FP ● Planar passivated chips ● Antiparallel diode for high frequency ● Isolation Voltage: 2 5 0 0 V~ ● Very low leakage current switching devices ● Industry standard outline ● Very short recovery time ● Antisaturation diode ● RoHS compliant ● Improved thermal behaviour ● Snubber diode ● Epoxy meets UL 94V-0 ● Very low Irm-values ● Free wheeling diode ● Soldering pins for PCB mounting ● Very soft recovery behaviour ● Rectifiers in switch mode power ● Base plate: Plastic overmolded tab ● Avalanche voltage rated for reliable operation supplies (SMPS) ● Reduced weight ● Soft reverse recovery for low EMI/RFI ● Uninterruptible power supplies (UPS) ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a ©2013 IXYS all rights reserved

DPG20C300PN Fast Diode Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse blocking voltage T = 25°C 300 V RSM VJ V max. repetitive reverse blocking voltage T = 25°C 300 V RRM VJ I reverse current, drain current V = 3 0 0 V T = 25°C 1 µA R R VJ V = 3 0 0 V T = 1 5 0 °C 0.06 mA R VJ V forward voltage drop I = 1 0 A T = 25°C 1.27 V F F VJ I = 2 0 A 1.45 V F I = 1 0 A T = 1 5 0 °C 0.98 V F VJ I = 2 0 A 1.17 V F I average forward current T = 1 2 5 °C T = 1 7 5 °C 10 A FAV C VJ rectangular d =0.5 V threshold voltage T = 1 7 5 °C 0.74 V F0 VJ for power loss calculation only r slope resistance 17.7 mΩ F R thermal resistance junction to case 4.4 K/W thJC R thermal resistance case to heatsink 0.50 K/W thCH P total power dissipation T = 25°C 35 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine; V = 0 V T = 45°C 140 A FSM R VJ C junction capacitance V = 1 5 0 V f = 1 MHz T = 25°C 15 pF J R VJ I max. reverse recovery current T = 25°C 3 A RM VJ I = 10A; V = 200V T =125°C 5.5 A F R VJ t reverse recovery time -di /dt = 200A/µs T = 25°C 35 ns rr F VJ T =125°C 45 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a ©2013 IXYS all rights reserved

DPG20C300PN Package TO-220FP Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 35 A RMS T virtual junction temperature -55 175 °C VJ T operation temperature -55 150 °C op T storage temperature -55 150 °C stg Weight 2 g M mounting torque 0.4 0.6 Nm D F mounting force with clip 20 60 N C d terminal to terminal 1.6 1.0 mm Spp/App creepage distance on surface | striking distance through air d terminal to backside 2.5 2.5 mm Spb/Apb V isolation voltage t = 1 second 2500 V ISOL 50/60 Hz, RMS; II S O L ≤ 1 mA t = 1 minute 2100 V Product Marking Part number D= Diode P= HiPerFRED G = extreme fast 20= Current Rating [A] C= Common Cathode 300= Reverse Voltage [V] Part Number abcdef PN = TO-220ABFP (3) Logo YYWWZ DateCode Assembly Code XXXXXX Assembly Line Ordering Part Number Marking on Product Delivery Mode Quantity Code No. Standard DPG20C300PN DPG20C300PN Tube 50 503665 Similar Part Package Voltage class DPG20C300PB TO-220AB (3) 300 Equivalent Circuits for Simulation * on die level T V J =175°C I V R Fast 0 0 Diode V threshold voltage 0.74 V 0 max R slope resistance * 14.5 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a ©2013 IXYS all rights reserved

DPG20C300PN Outlines TO-220FP E Ø P A A1 Q H Millimeters Inches Dim. D min max min max A 4.50 4.90 0.177 0.193 A1 2.34 2.74 0.092 0.108 1 2 3 A2 2.56 2.96 0.101 0.117 L1 b 0.70 0.90 0.028 0.035 A2 c 0.45 0.60 0.018 0.024 L D 15.67 16.07 0.617 0.633 E 9.96 10.36 0.392 0.408 e 2.54 BSC 0.100 BSC H 6.48 6.88 0.255 0.271 b1 b c e L 12.68 13.28 0.499 0.523 L1 3.03 3.43 0.119 0.135 ØP 3.08 3.28 0.121 0.129 Q 3.20 3.40 0.126 0.134 1 2 3 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a ©2013 IXYS all rights reserved

DPG20C300PN Fast Diode 30 0.4 12 T =125°C VJ V =200V 25 R 10 TVJ = 25°C 0.3 20 A IF=5 A 20 125°C 8 10 A IF 150°C Qrr 10 A IRR 20 A 15 0.2 6 [A] [μC] 5 A [A] 10 4 0.1 T =125°C 5 2 VJ V = 200 V R 0 0.0 0 0.0 0.4 0.8 1.2 1.6 2.0 0 100 200 300 400 500 0 100 200 300 400 500 VF [V] -diF/dt [A/μs] -diF/dt [A/μs] Fig.1 Forwardcurrent Fig.2 Typ.reverserecov.charge Fig.3 Typ.reverserecov.current I versusV Q versus-di /dt I versus-di /dt F F rr F RR F 100 12 400 T =125°C VJ 1.2 V =200 V R 80 9 300 t 0.8 trr 60 VFR TVJ= 125°C fr Kf IF=20 A 6 IF =10 A 200 I [ns]40 [V] VR =200 V RR 10 A [ns] 0.4 5 A 3 VFR 100 Qrr 20 tfr 0.0 0 0 0 0 40 80 120 160 0 100 200 300 400 500 0 100 200 300 400 500 TVJ [°C] -diF/dt [A/μs] -diF/dt [A/μs] Fig.4 Typ.dynamicparameters Fig.5 Typ.reverserecov.time Fig.6 Typ.forwardrecov.voltage Q ,I versusT t versus-di /dt V andt versusdi /dt rr RR VJ rr F FR fr F 10 10 T =125°C VJ V = 200 V R 8 I = 5A Erec 6 F 10A ZthJH 20A 1 [μJ] 4 [K/W] Rthi[K/W] ti[s] 0.3474 0.0003 2 0.633 0.0035 0.5473 0.029 2.162 1.2 0.7102 7.8 0 0.1 0 100 200 300 400 500 0.001 0.01 0.1 1 10 100 -di /dt [A/μs] t [s] F Fig.7 Typ.recoveryenergy Fig.8Transientthermalresistancejunctiontocase E versus-di /dt rec F IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a ©2013 IXYS all rights reserved

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