STTH12012TV Ultrafast recovery - 1200 V diode Main product characteristics K2 A2 A2 K1 I 2 x 60 A F(AV) V 1200 V RRM T 150° C j K1 A1 K2 A1 V (typ) 1.30 V F STTH12012TV STTH12012TV2 t (typ) 50 ns rr A1 A1 Features and benefits K1 K2 ■ Ultrafast, soft recovery A2 K1 ■ Very low conduction and switching losses K2 A2 ■ High frequency and/or high pulsed current ISOTOP operation ■ High reverse voltage capability ■ High junction temperature Order codes ■ Insulated package: Electrical insulation = 2500 VRMS Part Number Marking Capacitance = 45 pF STTH12012TV1 STTH12012TV1 Description STTH12012TV2 STTH12012TV2 The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/8 www.st.com 8

Characteristics STTH12012TV 1 Characteristics Table 1. A bsolute ratings (limiting values per diode at 25° C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM I RMS forward current 150 A F(RMS) I Average forward current, δ = 0.5 T = 45° C per diode 60 A F(AV) c I Repetitive peak forward current t = 5 µs, F = 5 kHz square 600 A FRM p Surge non repetitive forward I t = 10 ms Sinusoidal 420 A FSM current p T Storage temperature range -65 to + 150 °C stg T Maximum operating junction temperature 150 °C j Table 2. T hermal parameters Symbol Parameter Value Unit Per diode 0.74 R Junction to case th(j-c) Total 0.42 °C/W R Coupling thermal resistance 0.1 th(c) When the diodes are used simultaneously: ∆T = P x R (per diode) + P x R j(diode1) (diode1) th(j-c) (diode2) th(c) Table 3. S tatic electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25° C 30 I (1) Reverse leakage current j V = V µA R R RRM T = 125° C 30 300 j T = 25° C 2.25 j V (2) Forward voltage drop T = 125° C I = 60 A 1.35 2.05 V F j F T = 150° C 1.30 1.95 j 1. Pulse test: t = 5 ms, δ < 2 % p 2. Pulse test: t = 380 µs, δ < 2 % p To evaluate the conduction losses use the following equation: P = 1.50 x I + 0.0075 I 2 F(AV) F (RMS) 2/8

STTH12012TV Characteristics Table 4. D ynamic characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I = 1 A, dI /dt = -50 A/µs, F F 125 V = 30 V, T = 25° C R j I = 1 A, dI /dt = -100 A/µs, t Reverse recovery time F F 63 85 ns rr V = 30 V, T = 25° C R j I = 1 A, dI /dt = -200 A/µs, F F 50 70 V = 30 V, T = 25° C R j I = 60 A, dI /dt = -200 A/µs, I Reverse recovery current F F 32 45 A RM V = 600 V, T = 125° C R j I = 60 A, dI /dt = -200 A/µs, S Softness factor F F 1 V = 600 V, T = 125° C R j I = 60 A dI /dt = 100 A/µs t Forward recovery time F F 750 ns fr V = 1.5 x V , T = 25° C FR Fmax j I = 60 A, dI /dt = 100 A/µs, F F V Forward recovery voltage 4.5 V FP T = 25° C j Figure 1. Conduction losses versus Figure 2. Forward voltage drop versus average current forward current P(W) IFM(A) 160 200 140 δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1 180 ((MMaaxxTTiimmjj==uu11mm5500 vv°°aaCClluueess)) 160 120 140 100 120 ((TTyyppTTiijjcc==aa11ll55vv00aa°°llCCuueess)) 80 100 Tj= 25°C (Maximum values) 60 80 60 40 T 40 20 IF(AV)(A) δ=tp/T tp 20 VFM(V) 0 0 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3/8

Characteristics STTH12012TV Figure 3. R elative variation of thermal Figure 4. Peak reverse recovery current impedance junction to case versus dI /dt (typical values) F versus pulse duration Zth(j-c)/Rth(j-c) IRM(A) 1.0 80 0.9 70 TVjR==162050°CV IF= 2 x IF(AV) 0.8 60 0.7 IIFF== IIFF((AAVV)) 50 0.6 0.5 40 IIFF==00..55 xx IIFF((AAVV)) 0.4 Single pulse 30 0.3 20 0.2 10 0.1 tp(s) dIF/dt(A/µs) 0.0 0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 0 50 100 150 200 250 300 350 400 450 500 Figure 5. R everse recovery time versus Figure 6. Reverse recovery charges versus dI /dt (typical values) dI /dt (typical values) F F trr(ns) Qrr(µC) 1000 12 900 IF= 2 x IF(AV) TVjR==162050°CV 10 TVjR==162050°CV IF= 2 x IF(AV) 800 700 8 IF= IF(AV) 600 IIFF==IIFF((AAVV)) 6 500 IF=0.5 x IF(AV) 4 400 IF=0.5 x IF(AV) 2 300 dIF/dt(A/µs) dIF/dt(A/µs) 200 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 Figure 7. Softness factor versus dI /dt Figure 8. Relative variations of dynamic F (typical values) parameters versus junction temperature S factor 2.00 2.00 1.75 IFTV=jR=2=1 62x0 5I0F°(CVAV) 11..5705 Sfactor RefereVInFRc==e 6I:F0T(A0jV=V)125°C 1.50 1.25 1.00 1.25 0.75 IRM 1.00 0.50 ttRRRR 0.75 0.25 QRR Tj(°C) dIF/dt(A/µs) 0.00 0.50 25 50 75 100 125 0 50 100 150 200 250 300 350 400 450 500 4/8

STTH12012TV Characteristics Figure 9. T ransient peak forward voltage Figure 10. Forward recovery time versus dI /dt F versus dI /dt (typical values) (typical values) F VFP(V) tfr(ns) 25 1400 20 TIFj==1 2IF5(A°VC) 1200 VFR=T I1Fj=.=51 2IxF5(VA°VCF)max. 1000 15 800 10 600 400 5 200 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 100 200 300 400 500 0 100 200 300 400 500 Figure 11. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz Vosc=30mVRMS Tj=25°C 100 VR(V) 10 1 10 100 1000 5/8

Package mechanical data STTH12012TV 2 Package mechanical data Epoxy meets UL94, V0 Cooling method: by conduction (C) T able 5. ISOTOP dimensions DIMENSIONS REF. Millimeters Inches E Min. Max Min. Max. G2 C A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 A A1 B 7.8 8.20 0.307 0.323 C2 E2 C 0.75 0.85 0.030 0.033 F1 F C2 1.95 2.05 0.077 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 P1 E1 23.85 24.15 0.939 0.951 D S G D1 E2 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 B G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 ØP G1 F1 4.60 5.00 0.181 0.197 E1 P 4.00 4.30 0.157 0.69 P1 4.00 4.40 0.157 0.173 S 30.10 30.30 1.185 1.193 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 6/8

STTH12012TV Ordering information 3 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH12012TV1 STTH12012TV1 ISOTOP 27 g 10 Tube STTH12012TV2 STTH12012TV2 ISOTOP 27 g 10 Tube 4 Revision history Date Revision Description of Changes 02-Mar-2006 1 First issue. 7/8

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