D44H Series (NPN), D45H(cid:2)Series (PNP) Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as www.onsemi.com output or driver stages in applications such as switching regulators, converters and power amplifiers. 10 AMP COMPLEMENTARY SILICON POWER Features • Low Collector−Emitter Saturation Voltage TRANSISTORS 60, 80 VOLTS • Fast Switching Speeds • Complementary Pairs Simplifies Designs PNP NPN • These Devices are Pb−Free and are RoHS Compliant* COLLECTOR 2, 4 COLLECTOR 2, 4 MAXIMUM RATINGS 1 1 Rating Symbol Value Unit BASE BASE Collector−Emitter Voltage VCEO Vdc D44H8, D45H8 60 EMITTER 3 EMITTER 3 D44H11, D45H11 80 MARKING Emitter Base Voltage VEB 5.0 Vdc 4 DIAGRAM Collector Current − Continuous IC 10 Adc Collector Current − Peak (Note 1) ICM 20 Adc Total Power Dissipation PD W @ TC = 25°C 70 @ TA = 25°C 2.0 TO−220 D4xHyyG CASE 221A AYWW Operating and Storage Junction TJ, Tstg −55 to +150 °C STYLE 1 Temperature Range 1 2 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Width ≤ 6.0 ms, Duty Cycle ≤ 50%. D4xHyy =Device Code x = 4 or 5 THERMAL CHARACTERISTICS yy = 8 or 11 A =Assembly Location Characteristic Symbol Max Unit Y =Year Thermal Resistance, Junction−to−Case R(cid:2)JC 1.8 °C/W WW =Work Week G =Pb−Free Package Thermal Resistance, Junction−to−Ambient R(cid:2)JA 62.5 °C/W MPuarxpimosuems: L1e/8a″d fTroemm pCearsaetu froer f5o rS Seoclodnedrisng TL 275 °C ORDERING INFORMATION Device Package Shipping D44H8G TO−220 50 Units/Rail (Pb−Free) D44H11G TO−220 50 Units/Rail (Pb−Free) D45H8G TO−220 50 Units/Rail (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please D45H11G TO−220 50 Units/Rail download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free) Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 − Rev. 13 D44H/D

D44H Series (NPN), D45H Series (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage D44H8, D45H8 VCEO(sus) 60 − − Vdc (IC = 30 mAdc, IB = 0 Adc) D44H11, D45H11 80 − − Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES − − 10 (cid:3)A Emitter Cutoff Current (VEB = 5.0 Vdc) IEBO − − 10 (cid:3)A ON CHARACTERISTICS DC Current Gain hFE − (VCE = 1.0 Vdc, IC = 2.0 Adc) 60 − − (VCE = 1.0 Vdc, IC = 4.0 Adc) 40 − − Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 8.0 Adc, IB = 0.4 Adc) − − 1.0 Base−Emitter Saturation Voltage VBE(sat) − − 1.5 Vdc (IC = 8.0 Adc, IB = 0.8 Adc) DYNAMIC CHARACTERISTICS Collector Capacitance Ccb pF (VCB = 10 Vdc, ftest = 1.0 MHz) D44H Series − 90 − D45H Series − 160 − Gain Bandwidth Product fT MHz (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) D44H Series − 50 − D45H Series − 40 − SWITCHING TIMES Delay and Rise Times td + tr ns (IC = 5.0 Adc, IB1 = 0.5 Adc) D44H Series − 300 − D45H Series − 135 − Storage Time ts ns (IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc) D44H Series − 500 − D45H Series − 500 − Fall Time tf ns (IC = 5.0 Adc, IB1 = 102 = 0.5 Adc) D44H Series − 140 − D45H Series − 100 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

D44H Series (NPN), D45H Series (PNP) 1000 1000 VCE = 1 V VCE = 1 V 25°C N N AI 125°C AI G G 125°C T T EN −40°C EN 25°C R R R 100 R100 −40°C U U C C C C D D , E , E F F h h 10 10 0.01 0.1 1 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. D44H11 DC Current Gain Figure 2. D45H11 DC Current Gain 1000 1000 VCE = 5 V VCE = 5 V N 25°C N AI 125°C AI G G 125°C T T N N 25°C E E RR 100 −40°C RR100 −40°C U U C C C C D D , E , E F F h h 10 10 0.01 0.1 1 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. D44H11 DC Current Gain Figure 4. D45H11 DC Current Gain 0.40 0.6 S) 0.35 VCE(sat) @ IC/IB = 10 S) VCE(sat) @ IC/IB = 10 LT LT 0.5 O O V 0.30 V AGE ( 0.25 −40°C AGE ( 0.4 −40°C T T L L O 0.20 O 0.3 V V 25°C ON 0.15 25°C ON 125°C TI TI 0.2 RA 0.10 125°C RA U U T T 0.1 A 0.05 A S S 0 0 0.1 1 10 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. D44H11 ON−Voltage Figure 6. D45H11 ON−Voltage www.onsemi.com 3

D44H Series (NPN), D45H Series (PNP) 1.2 1.4 OLTS) 1.0 VBE(sat) @ IC/IB = 10 −40°C OLTS) 1.2 VBE(sat) @ IC/IB = 10 −40°C V V GE ( 0.8 125°C GE ( 1.0 TA TA 0.8 L L 125°C O 0.6 O N V 25°C N V 0.6 O O 25°C ATI 0.4 ATI 0.4 R R U U AT 0.2 AT 0.2 S S 0 0 0.1 1 10 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 7. D44H11 ON−Voltage Figure 8. D45H11 ON−Voltage 100 TA TC PS) 50 TS) M 30 T ENT (A 1200 1.0 ms 100 1(cid:3)0s (cid:3)s ON (WA 3.0 60 CTOR CURR 1235....0000 TDCU T≤ Y7 0C°Y CCLE ≤ 50% dc 1.0 (cid:3)s R DISSIPATI 2.0 40 TC E E LL 0.5 W 1.0 20 TA O O C 0.3 D44H/45H8 P , C 0.2 D44H/45H10,11 , D I P 0.1 0 0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0 20 40 60 80 100 120 140 160 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) T, TEMPERATURE (°C) Figure 9. Maximum Rated Forward Bias Figure 10. Power Derating Safe Operating Area 1.0 0.7 D) D = 0.5 RMALALIZE 00..53 EM 0.2 THR 0.2 NT NO 0.1 ANSIEANCE (00.0.17 0.05 ZR(cid:2)(cid:2)JJCC( t=) =1 .r5(t6) °RC(cid:2)/WJC MAX P(pk) RT0.05 D CURVES APPLY FOR POWER TS 0.02 r(t), RESI0.03 PRUELASDE T TIMREA IANT S t1HOWN t1 t2 0.02 0.01 SINGLE PULSE TJ(pk) - TC = P(pk) Z(cid:2)JC(t) DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k t, TIME (ms) Figure 11. Thermal Response www.onsemi.com 4

D44H Series (NPN), D45H Series (PNP) PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. −T− SPELAATNIENG 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL B F C BODY AND LEAD IRREGULARITIES ARE T S ALLOWED. INCHES MILLIMETERS 4 DIM MIN MAX MIN MAX A 0.570 0.620 14.48 15.75 Q A B 0.380 0.415 9.66 10.53 C 0.160 0.190 4.07 4.83 1 2 3 U D 0.025 0.038 0.64 0.96 F 0.142 0.161 3.61 4.09 H G 0.095 0.105 2.42 2.66 H 0.110 0.161 2.80 4.10 K J 0.014 0.024 0.36 0.61 Z K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 L R Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 V J S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 G U 0.000 0.050 0.00 1.27 D V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 N STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative www.onsemi.com D44H/D 5

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