BU1006A, BU1008A, BU1010A www.vishay.com Vishay General Semiconductor Enhanced isoCink+™ Bridge Rectifiers FEATURES isoCink+™ • UL recognition file number E312394 • Thin single in-line package • Glass passivated chip junction • Available for BU-5S lead forming option (part - + number with “5S” suffix, e.g. BU1006A5S) Available ~ ~ ~ ~ • Superior thermal conductivity + - • Solder dip 275 °C max. 10 s, per JESD 22-B106 Case Style BU • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification + ~ ~ - for switching power supply, home appliances, and white-goods applications. PRIMARY CHARACTERISTICS MECHANICAL DATA Package BU Case: BU I 10 A Molding compound meets UL 94 V-0 flammability rating F(AV) Base P/N-E3 - RoHS-compliant, commercial grade V 600 V, 800 V, 1000 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 90 A commercial grade FSM I 5 μA Terminals: matte tin plated leads, solderable per R J-STD-002 and JESD 22-B102 V at I = 5.0 A 0.94 V F F E3 and M3 suffix meet JESD 201 class 1A whisker test TJ max. 150 °C Polarity: as marked on body Circuit configuration In-line Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL BU1006A BU1008A BU1010A UNIT Maximum repetitive peak reverse voltage V 600 800 1000 V RRM T = 90 °C (1) 10 C Average rectified forward current (Fig. 1, 2) I A T = 25 °C (2) O 3.0 A Non-repetitive peak forward surge current I 90 A 8.3 ms single sine-wave, T = 25 °C FSM J Rating for fusing (t < 8.3 ms) T = 25 °C I2t 33 A2s J Operating junction and storage temperature range T , T -55 to +150 °C J STG Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Maximum instantaneous forward TA = 25 °C 1.02 1.10 I = 5.0 A V V voltage per diode (1) F T = 125 °C F 0.94 1.00 A T = 25 °C - 5.0 A Maximum reverse current per diode rated V I μA R R T = 125 °C 45 250 A Typical junction capacitance per diode 4.0 V, 1 MHz C 30 - pF J Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle Revision: 29-Aug-17 1 Document Number: 84800 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BU1006A, BU1008A, BU1010A www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL BU1006A BU1008A BU1010A UNIT R (1) 3.0 JC Typical thermal resistance °C/W R (2) 20 JA Notes (1) With 60 W air cooled heatsink (2) Without heatsink, free air ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BU1006A-E3/45 4.48 45 20 Tube BU1006A-E3/51 4.48 51 250 Paper tray BU1006A-M3/45 4.48 45 20 Tube BU1006A5S-E3/45 4.48 45 20 Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise specified) A 12 24 A) orward Output Current ( 14680 WSTCini tMhe -eHWaeasauvterse,i ndRTk Ca-Lt oDaedvice BottToCm d Power Dissipation (W) 1128260 e F war ag 2 or 4 er F v A 0 0 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 9 10 11 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Derating Curve Output Rectified Current Fig. 3 - Forward Power Dissipation 4 100 A) d Current ( 3 Current (A) 10 TJ = 150 °C ward Rectifie 2 ous Forward 1 TJ = 125 °C Average For 1 WSFrineitheeo- AWuitra ,H vTeeA,a Rts-iLnokad Instantane 0.1 TJ = 25 °C 0 0.01 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Ambient Temperature (°C) Instantaneous Forward Voltage (V) Fig. 2 - Forward Current Derating Curve Fig. 4 - Typical Forward Characteristics Per Diode Revision: 29-Aug-17 2 Document Number: 84800 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BU1006A, BU1008A, BU1010A www.vishay.com Vishay General Semiconductor 1000 100 A) nt (µ 100 TJ = 150 °C )F e p urr ( e e C 10 TJ = 125 °C cna ers tica ntaneous Rev 0.11 TJ = 25 °C paC noitcnuJ a st n I 0.01 10 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 5 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Junction Capacitance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Type BU 0.161 (4.10) 0.142 (3.60) 0.880 (22.3) 0.860 (21.8) View A 0.020R (TYP.) 9° 0.125 (3.2) x 45° TYP. Chamfer 0.160 (4.1) 0.310 (7.9) 0.140 (3.5) 0.290 (7.4) 0.740 (18.8) 0.075 0.720 (18.3) 0.080 (2.03) (1.9) R 0.060 (1.52) 0.085 (2.16) + ~ ~ - 0.065 (1.65) 5° TYP. 0.048 (1.23) 0.039 (1.00) 0.710 (18.0) 0.690 (17.5) 0.050 (1.27) 0.100 (2.54) 0.040 (1.02) 0.085 (2.16) 0.028 (0.72) 0.080 (2.03) 0.020 (0.52) 0.190 (4.83) 0.065 (1.65) 0.210 (5.33) Polarity shown on front side of case, positive lead beveled corner 0.055 (1.385) REF. 0.094 (2.39) x 45° REF. R 0.11 (2.78) REF. 0.64 (16.28) REF. 0.62 (15.78) REF. R 0.10 (2.60) REF. 0.055 (1.385) REF. Revision: 29-Aug-17 3 Document Number: 84800 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BU1006A, BU1008A, BU1010A www.vishay.com Vishay General Semiconductor FORMING SPECIFICATION: BU-5S in inches (millimeters) 0.161 (4.10) 0.142 (3.60) 0.880 (22.3) 9° 0.860 (21.8) 0.020R (TYP.) TYP. 0.125 (3.2) x 45° Chamfer 0.160 (4.1) 0.310 (7.9) 0.140 (3.5) 0.290 (7.4) 0.740 (18.8) 0.720 (18.3) 0.075 (1.9) R 0.085 (2.16) + ~ ~ - 0.065 (1.65) 5° TYP. 0.080 (2.03) 0.100 (2.54) 0.060 (1.52) 0.085 (2.16) 0.219 (5.55) MAX. 0.315 (8.0) 0.050 (1.27) 0.134 (3.40) 0.276 (7.0) 0.040 (1.02) 0.087 (2.20) 0.213 (5.40) 0.319 (8.10) 0.173 (4.40) 0.028 (0.72) 0.272 (6.90) 0.417 (10.60) 0.319 (8.10) 0.020 (0.52) 0.370 (9.40) 0.272 (6.90) 0.080 (2.03) 0.065 (1.65) APPLICATION NOTE 1. Device UL approved for safety use dielectric strength of 1500 V 2. If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement. 3. Heat sink shape recommendation: (3) Heatsink 2.5 mm MIN. 2.5 mm MIN. By Safety Requirements Revision: 29-Aug-17 4 Document Number: 84800 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: BU1006A-E3/45 BU1006A-E3/51 BU1008A-E3/45 BU1008A-E3/51 BU1010A-E3/45 BU1010A-E3/51 BU1006A5S- E3/45 BU1010A5S-E3/45 BU1008A5S-E3/45