BAT42 BAT43 ® SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Generalpurpose,metaltosilicondiodesfeaturing very low turn-on voltage fast switching. These devices have integrated protection against DO-35 excessive voltage such as electrostatic dis- ABSOLUTE RATINGS(limiting values) Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 30 V IF Forward Continuous Current Ta= 25°C 200 mA IFRM Repetitive Peak Fordware Current tp £ 1s 500 mA d £ 0.5 IFSM Surge non Repetitive Forward Current* tp= 10ms 4 A Ptot Power Dissipation* Tl= 65 °C 200 mW Tstg Storage and Junction Temperature Range - 65 to +150 °C Tj - 65 to +125 °C Maximum Temperature for Soldering during 10s at 4mm from TL Case 230 (cid:176) C THERMALRESISTANCE Symbol Test Conditions Value Unit Rth(j-a) Junction-ambient* 300 °C/W * On infinite heatsink with 4mm lead length October 2001 - Ed: 1C 1/4

BAT42 / BAT43 ELECTRICALCHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit VBR Tj= 25°C IR= 100m A 30 V VF* Tj= 25(cid:176) C IF= 200mA All Types 1 V Tj= 25(cid:176) C IF= 10mA BAT 42 0.4 Tj= 25(cid:176) C IF= 50mA 0.65 Tj= 25(cid:176) C IF= 2mA BAT 43 0.26 0.33 Tj= 25(cid:176) C IF= 15mA 0.45 IR* Tj= 25(cid:176) C VR= 25V 0.5 m A Tj= 100°ÉC 100 DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit C Tj= 25°C VR= 1V f = 1MHz 7 pF trr Tj = 25(cid:176) C IF= 10mA IR= 10mA irr= 1mA 5 ns RL= 100W h Tj= 25°C RL= 15KW CL= 300pF f = 45MHz Vi= 2V 80 % * Pulse test: tp£ 300m s d< 2%. Fig.1:Forwardcurrentversusforwardvoltageat Fig. 2: Forward current versus forward voltage different temperatures (typical values). (typical values). 2/4 ®

BAT42 / BAT43 Fig.3:Reversecurrentversusjunctiontempera- Fig. 4: Reverse current versus continuous re- ture (typical values). verse voltage. Fig. 5: Capacitance C versus reverse applied voltage V (typical values). R 3/4 ®

BAT42 / BAT43 PACKAGE MECHANICALDATA DO-35 REF. DIMENSIONS C A C O/ B Millimeters Inches Min. Max. Min. Max. A 3.05 4.50 0.120 0.177 O/D O/D B 1.53 2.00 0.060 0.079 C 28.00 1.102 D 0.458 0.558 0.018 0.022 Cooling method: by convection and conduction Marking: clear, ring at cathode end. Weight: 0.15g Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesof useofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.Nolicenseisgrantedby implicationorotherwiseunderanypatentorpatentrightsofSTMicroelectronics.Specificationsmentionedinthispublicationaresubjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpresswritten approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 ®

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