2 3 2 3 2 3 7 2 2 - 1 4 1 4 1 4 OT S Anti-Paralle l Parallel APT2x100DQ120J APT2x101DQ120J APT2x101DQ120J 1200V 100A "UL Recognized" APT2x100DQ120J 1200V 100A ISOTOP® file # E145592 DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses -Switchmode Power Supply -Inverters • Soft Recovery Characteristics • Low Noise Switching • Free Wheeling Diode -Motor Controllers • Popular SOT-227 Package • Cooler Operation -Converters • Snubber Diode • Low Forward Voltage • Higher Reliability Systems • Uninterruptible Power Supply (UPS) • High Blocking Voltage • Increased System Power Density • Induction Heating • Low Leakage Current • High Speed Rectifi ers • Avalanche Energy Rated MAXIMUM RATINGS All Ratings: T = 25°C unless otherwise specifi ed. C Symbol Characteristic / Test Conditions APT2x101_100DQ120J UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 1200 Volts RRM V Maximum Working Peak Reverse Voltage RWM I Maximum Average Forward Current (T = 50°C, Duty Cycle = 0.5) 100 F(AV) C I RMS Forward Current (Square wave, 50% duty) 127 Amps F(RMS) I Non-Repetitive Forward Surge Current (T = 45°C, 8.3ms) 1000 FSM J E Avalanche Energy (1A, 40mH) 20 mJ AVL T ,T Operating and StorageTemperature Range -55 to 175 °C J STG STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I = 100A 2.4 3.0 F V Forward Voltage I = 150A 2.65 Volts F F I = 100A, T = 125°C 1.8 F J V = 1200V 100 1 R 1 IRM Maximum Reverse Leakage Current VR = 1200V, TJ = 125°C 500 μA D 5 -20 CT Junction Capacitance, VR = 200V 110 pF ev R 0 3 2 4 3- 5 0

DYNAMIC CHARACTERISTICS APT2x101_100DQ120J Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C - 45 ns t Reverse Recovery Time - 385 rr I = 100A, di /dt = -200A/μs Q Reverse Recovery Charge F F - 1055 nC rr V = 800V, T = 25°C R C I Maximum Reverse Recovery Current - 6 - Amps RRM t Reverse Recovery Time - 480 ns rr I = 100A, di /dt = -200A/μs Qrr Reverse Recovery Charge F F - 5240 nC V = 800V, T = 125°C R C I Maximum Reverse Recovery Current - 19 - Amps RRM t Reverse Recovery Time - 210 ns rr I = 100A, di /dt = -1000A/μs Q Reverse Recovery Charge F F - 9345 nC rr V = 800V, T = 125°C I Maximum Reverse Recovery Current R C - 70 Amps RRM THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R Junction-to-Case Thermal Resistance .41 °C/W qJC VIsolation RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 Volts 1.03 oz W Package Weight T 29.2 g 10 lb•in Torque Maximum Mounting Torque 1.1 N•m Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. 0.45 C/W) 0.40 0.9 E (° 0.35 C 0.7 N 0.30 A D PE 0.25 0.5 M Note: L I 0.20 RMA 0.15 0.3 PDM t1 E t2 H 0.10 Z, TθJC 0.05 00.0.15 SINGLE PULSE PeakD TutJy =F aPcDtoMr D x =ZθJtC1 /t+2 TC 0 10-5 10-4 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 1 1 0 2 5- D v e R 0 3 2 4 3- 5 0

TYPICAL PERFORMANCE CURVES APT2x101_100DQ120J 300 600 TJ = 125°C E VR = 800V 150A ENT 250 Y TIM 500 R R ORWARD CUR(A) 210500 TTJJ = = 1 12755°°CC ERSE RECOVE(ns) 430000 100A 50A F 100 V 200 I, F 50 TJ = 25°C t, RErr 100 T = -55°C J 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 400 600 800 1000 1200 V , ANODE-TO-CATHODE VOLTAGE (V) -di /dt, CURRENT RATE OF CHANGE(A/μs) F F Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change 12000 80 E TJ = 125°C NT TJ = 125°C RG VR = 800V RE 70 VR = 800V HA 10000 150A UR 150A C C 60 VERY 8000 100A VERY 50 100A RECO(nC) 6000 RECO(A) 40 RSE 50A RSE 30 50A E 4000 E V V RE RE 20 Q, rr 2000 , RRM 10 I 0 0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 -di /dt, CURRENT RATE OF CHANGE (A/μs) -di /dt, CURRENT RATE OF CHANGE (A/μs) F F Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change 1.4 160 Duty cycle = 0.5 ETERS A/μs) 11..20 trrQrr 114200 TJ = 175°C NAMIC PARAMmalized to 1000 00..86 trr IRRM I(A) F(AV) 1086000 K, DYf(Nor 0.4 Q 40 rr 0.2 20 0.0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 175 T, JUNCTION TEMPERATURE (°C) Case Temperature (°C) J Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature 800 E 700 C N A 600 T CI PA 500 ON CA(pF) 400 TI C 300 N 1 C, JUJ 200 D 5-201 100 v e 0 R 1 10 100 200 0 V , REVERSE VOLTAGE (V) 3 Figure 8. JunRction Capacitance vs. Reverse Voltage 3-42 5 0

APT2x101_100DQ120J Vr +18V diF/dt Adjust APT75GP120 0V D.U.T. 30μH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 I - Forward Conduction Current F 1 4 2 di /dt - Rate of Diode Current Change Through Zero Crossing. F Zero 3 I - Maximum Reverse Recovery Current . RRM 5 0.25 IRRM 4 trr - Revers e Recovery Time, measured from zero crossing wher e diode 3 current goes from positive to negative, to the point at which the straight 2 line through I and 0.25 I passes through zero. RRM RRM 5 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10. Diode Reverse Recovery Waveform Defi nition SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 31.5 (1.240) 12.2 (.480) 31.7 (1.248) 8.9 (.350) 7.8 (.307) W=4.1 (.161) 9.6 (.378) 8.2 (.322) W=4.3 (.169) Hex Nut M4 H100 H=4.8 (.187) (4 places ) H=4.9 (.193) (4 places) 25.2 (0.992) r = 4.0 (.157) (2 places) 4.0 (.157) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 4.2 (.165) 0.85 (.033) 12.8 (.504) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) 14.9 (.587) Anti-paralle l Parallel 15.1 (.594) APT2x100DQ120J APT2x101DQ120J 30.1 (1.185) 30.3 (1.193) Anode 2 Cathode 1 Cathode 1 Anode 1 38.0 (1.496) 38.2 (1.504) 1 1 20 Dimensions in Millimeters and (Inches) Cathode 2 Anode 1 Cathode 2 Anode 2 5- D v e R 0 3 2 4 3- 5 0