TrenchT2TM IXTA100N04T2 V = 40V DSS Power MOSFET IXTP100N04T2 I = 100A D25 R  7m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 40 V DSS J V T = 25C to 175C, R = 1M 40 V DGR J GS VGSM Transient 20 V G D I T = 25C 100 A S D25 C D (Tab) I T = 25C, Pulse Width Limited by T 300 A DM C JM I T = 25C 50 A G = Gate D = Drain A C S = Source Tab = Drain E T = 25C 300 mJ AS C P T = 25C 150 W D C T -55 ... +175  C Features J T 175  C JM T -55 ... +175  C  International Standard Packages stg  Avalanche Rated T Maximum Lead Temperature for Soldering 300 °C  Low Package Inductance L T 1.6 mm (0.062in.) from Case for 10s 260 °C  Fast Intrinsic Rectifier SOLD 175°C Operating Temperature F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C  High Current Handling Capability M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d  ROHS Compliant Weight TO-263 2.5 g  High Performance Trench TO-220 3.0 g Technology for extremely low R DS(on) Advantages  High Power Density  Easy to Mount  Space Savings Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 40 V Applications DSS GS D V V = V , I = 250A 2.0 4.0 V GS(th) DS GS D  Automotive Engine Control I V =  20V, V = 0V 100 nA  Synchronous Buck Converter GSS GS DS (for Notebook SystemPower & IDSS VDS = VDSS, VGS = 0V 2 A General Purpose Point & Load) T = 150C 50 A  DC/DC Converters J  High Current Switching Applications RDS(on) VGS = 10V, ID = 25A, Notes 1 & 2 7 m  Power Train Management Distributed Power Architecture © 2018 IXYS CORPORATION, All Rights Reserved DS99972A(7/18)

IXTA100N04T2 IXTP100N04T2 Symbol Test Conditions Characteristic Values TO-263 Outline (TJ = 25C Unless Otherwise Specified) Min. Typ. Max. E C2A E1 g V = 10V, I = 50A, Note 1 27 45 S fs DS D L1 D1 D Ciss 2690 pF 1 2 3 L2 A1H 4 C V = 0V, V = 25V, f = 1MHz 490 pF oss GS DS b2 b L3 C 105 pF c e 0.43 [11.0] e rss 0 t 12.0 ns d(on) Resistive Switching Times 0.34 [8.7] t 5.2 ns A2 0.66 [16.6] tr VGS = 10V, VDS = 20V, ID = 50A 15.8 ns 1 - Gate 0.20 [5.0] 60.12 [3.0] td(off) RG = 5 (External) 6.4 ns 23 ,4- S- oDurracien 0.10 [2.5] 0.06 [1.6] f Q 25.5 nC g(on) Q V = 10V, V = 0.5 • V , I = 0.5 • I 8.0 nC gs GS DS DSS D DSS Q 5.7 nC gd R 1.00 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 100 A S GS TO-220 Outline I Repetitive, Pulse Width Limited by T 400 A SM JM E oP A A1 V I = 50A, V = 0V, Note 1 1.2 V SD F GS Q H1 t 34 ns rr I = 50A, V = 0V, D D2 IRM F G S 1.44 A D1 -di/dt = 100A/s, V = 20V Q R 24.5 nC E1 RM EJECTOR A2 PIN L1 L Notes: 1. Pulse test, t  300s; duty cycle, d  2%. ee ee11 c 3 X3 bX b2 2. On through-hole packages, R Kelvin test contact 1 - Gate DS(on) 2,4 - Drain location must be 5mm or less from the package body. 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents:4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

IXTA100N04T2 IXTP100N04T2 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC 100 350 90 V G S = 1150VV VGS = 15V 9V 8V 300 80 10V 70 7V 250 9V es 60 es er er200 p p m 50 m A A 8V - D 40 6V - D150 I I 30 100 7V 20 5V 50 6V 10 0 0 5V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 1 2 3 4 5 6 7 8 9 10 V - Volts V - Volts DS DS Fig. 3. Output Characteristics @ TJ = 150oC Fig. 4. RDS(on) Normalized to ID = 50A Value vs. Junction Temperature 100 2.2 90 VGS = 15V VGS = 10V 10V 2.0 8V 9V 80 1.8 70 7V ed I D = 100A mperes 5600 Normaliz 11..46 I D = 50A I - AD 40 6V - S(on) 1.2 D 30 R 1.0 20 5V 0.8 10 0 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 -25 0 25 50 75 100 125 150 175 V - Volts T - Degrees Centigrade DS J Fig. 5. RDS(on) Normalized to ID = 50A Value vs. Fig. 6. Drain Current vs. Case Temperature Drain Current 2.6 120 2.4 VGS = 10V 15V 100 2.2 TJ = 175oC d 2.0 ze 80 ormali 1.8 peres N 1.6 m 60 - S(on) 1.4 I - AD D 40 R 1.2 TJ = 25oC 1.0 20 0.8 0.6 0 0 50 100 150 200 250 300 -50 -25 0 25 50 75 100 125 150 175 ID - Amperes TC - Degrees Centigrade © 2018 IXYS CORPORATION, All Rights Reserved

IXTA100N04T2 IXTP100N04T2 Fig. 7. Input Admittance Fig. 8. Transconductance 100 VDS = 10V 60 VDS = 10V TJ = - 40oC 80 50 25oC eres 60 mens 40 I - AmpD 40 TJ = 150oC g - Sief s 30 150oC 25oC 20 - 40oC 20 10 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0 10 20 30 40 50 60 70 80 90 100 110 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 300 10 9 VDS = 20V 250 I D = 50A 8 I G = 10mA 7 200 eres olts 6 Amp150 - VS 5 - S VG 4 I100 TJ = 150oC 3 2 50 TJ = 25oC 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0 2 4 6 8 10 12 14 16 18 20 22 24 26 V - Volts Q - NanoCoulombs SD G Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 1000 s RDS(on) Limit d Ciss a ar 1,000 100 25μs PicoF eres 100μs e - Coss mp acitanc 100 I - AD 10 1ms p a Crss C TJ = 175oC 10ms 100ms TC = 25oC f = 1 MHz Single Pulse DC 10 1 0 5 10 15 20 25 30 35 40 1 10 100 V - Volts V - Volts DS DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA100N04T2 IXTP100N04T2 Fig. 13. Resistive Turn-on Fig. 14. Resistive Turn-on Rise Time vs. Junction Temperature Rise Time vs. Drain Current 6.5 7.0 6.0 RG = 5Ω , VGS = 10V 6.5 RG = 5Ω , VGS = 10V VDS = 20V VDS = 20V 6.0 5.5 s nd ds 5.5 TJ = 125oC o5.0 n c o se ec 5.0 no4.5 I D = 100A os Na an 4.5 t - r 4.0 I D = 50A t - Nr 4.0 3.5 TJ = 25oC 3.5 3.0 3.0 2.5 2.5 25 35 45 55 65 75 85 95 105 115 125 20 30 40 50 60 70 80 90 100 T - Degrees Centigrade I - Amperes J D Fig. 15. Resistive Turn-on Fig. 16. Resistive Turn-off Switching Times vs. Gate Resistance Switching Times vs. Junction Temperature 7.0 16 15 23 6.5 Tt Jf = 1 2 5 o C , VtdG(Sof f=) 10V 15 13 Rt Gf = 5 Ω , V tGdS(o =ff )1 0V 21 t - Nanosecondsr 4556....5050 VDS = 20V I D = 50A, 100A 11111234 d(on)t - Nanoseconds t - Nanosecondsf 1179 VDS = 20V I D = 100A I D = 50A 111579 d(off)t - Nanoseconds I D = 100A 5 13 4.0 10 3.5 9 3 11 4 6 8 10 12 14 16 18 20 25 35 45 55 65 75 85 95 105 115 125 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Fig. 18. Resistive Turn-off Switching Times vs. Drain Current Switching Times vs. Gate Resistance 20 28 80 80 18 t f td(off) 26 70 t f td(off) 70 RG = 5Ω, VGS = 10V TJ = 125oC, VGS = 10V 16 VDS = 20V 24 60 VDS = 20V 60 Nanoseconds111024 TJ = 125oC 122802 d(off)t - Nanose Nanoseconds 4500 I D = 50A 4500 d(off)t - Nanose t - f 8 16 cond t - f 30 I D = 100A 30 cond s 20 20 s 6 14 4 TJ = 25oC 12 10 10 2 10 0 0 20 30 40 50 60 70 80 90 100 4 6 8 10 12 14 16 18 20 ID - Amperes RG - Ohms © 2018 IXYS CORPORATION, All Rights Reserved

IXTA100N04T2 IXTP100N04T2 Fig. 19. Maximum Transient Thermal Impedance 10 1 W K / - C 0.1 h)J Z(t 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_100N04T2 (V2) 7-9-18-A

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