VBE 17-12NO7 ECO-PAC TM I = 19 A dAV V = 1200 V Single Phase Rectifier Bridge RRM t = 40 ns (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:3)(cid:5)(cid:9)(cid:10)(cid:11)(cid:12)(cid:13)(cid:10)(cid:14)(cid:15)(cid:5)(cid:16)(cid:17)(cid:2)(cid:3)(cid:7)(cid:18)(cid:2)(cid:7)(cid:19)(cid:5)(cid:20)(cid:2)(cid:12)(cid:21)(cid:10)(cid:8)(cid:5)(cid:22)(cid:6)(cid:9)(cid:16)(cid:20)(cid:23) rr D V V Typ RSM RRM V V A 1200 1200 VBE 17-12NO7 N K Symbol Conditions Maximum Ratings Features I (cid:1) T = 85°C, module 19 A (cid:127) Package with DCB ceramic IdAV C 90 A base plate in low profile dAVM (cid:127) Isolation voltage 3000 V~ I T = 45°C t = 10 ms (50 Hz), sine 40 A (cid:127) Planar passivated chips FSM VJ V = 0 t = 8.3 ms(60 Hz), sine 45 A (cid:127) Low forward voltage drop R (cid:127) Leads suitable for PC board soldering T = T t = 10 ms (50 Hz), sine 35 A VJ VJM V = 0 t = 8.3 ms(60 Hz), sine 40 A R Applications I2t T = 45°C t = 10 ms (50 Hz), sine 10 A2s VJ (cid:127) Supplies for DC power equipment V = 0 t = 8.3 ms(60 Hz), sine 10 A2s R (cid:127) Input and output rectifiers for high T = T t = 10 ms (50 Hz), sine 5 A2s frequency VJ VJM V = 0 t = 8.3 ms(60 Hz), sine 5 A2s (cid:127) Battery DC power supplies R (cid:127) Field supply for DC motors T -40...+150 °C VJ T 150 °C VJM Advantages T -40...+125 °C stg (cid:127) Space and weight savings V 50/60 Hz, RMS t = 1 min 3000 V~ (cid:127) Improved temperature and power ISOL I (cid:1) 1 mA t = 1 s 3600 V~ cycling capability ISOL (cid:127) Small and light weight M Mounting torque (M4) 1.5-2/14-18 Nm/lb.in. d (cid:127) Low noise switching Weight typ. 19 g Symbol Conditions Characteristic Values Dimensions in mm (1 mm = 0.0394") typ. max. I V = V T = 25°C 0.06 mA R R RRM VJ V = V T = T 0.25 mA R RRM VJ VJM V I = 10 A T = 25°C 2.92 V F F VJ V for power-loss calculations only 1.32 V rT0 30 m(cid:2) T R per diode; DC current 2.5 K/W thJC R per diode, DC current, typ. 0.3 K/W thCH I I = 12 A, -diF/dt = 100 A/µs 4 8.5 A RM F V = 100 V, L = 0.05 mH, T = 100°C R VJ t I = 1 A; -di/dt = 50 A/µs; V = 30 V, T = 25°C 40 tbd ns rr F R VJ a Max. allowable acceleration 50 m/s2 d creeping distance on surface 11.2 mm S d creepage distance in air 9.7 mm A Data according to IEC 60747 refer to a single diode unless otherwise stated (cid:1) for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and dimensions. 32 0 © 2000 IXYS All rights reserved 1 - 2

VBE 17-12NO7 30 2000 40 T = 100°C T = 100°C A VVJ= 600V VVJ= 600V nC R A R 25 1500 30 I I F 20 Qr IF= 20A RM I= 10A T =150°C IF= 5A I= 20A VJ F F 15 1000 20 I= 10A F I= 5A T =100°C F VJ 10 T = 25°C 500 10 VJ 5 0 0 0 0 1 2 3 4V 100 A/ms 1000 0 200 400 600 A8/0m0s 1000 V -di/dt -di/dt F F F Fig. 1 Forward current I versus V Fig. 2 Reverse recovery charge Q Fig. 3 Peak reverse current I F F r RM versus -di /dt versus -di /dt F F 2.0 150 120 1.2 1n4s0 TVVRJ == 160000°VC V TIFV J == 11000A°C µs 1.5 trr VFR tfr V tfr Kf 130 80 FR 0.8 I= 20A 1.0 I 120 IF= 10A RM IF= 5A F 110 40 0.4 0.5 Q r 100 0.0 90 0 0.0 0 40 80 120 °C 160 0 200 400 600 A8/0m0s 1000 0 200 400 600 A80/m0s 1000 T -di/dt di/dt VJ F F Fig. 4 Dynamic parameters Q, I Fig. 5 Recovery time t versus -di /dt Fig. 6 Peak forward voltage V and t r RM rr F FR fr versus T versus di /dt VJ F 10 Constants for Z calculation: K/W thJC i R (K/W) t (s) thi i 1 1 0.8776 0.0052 2 0.3378 0.0003 Z 3 0.0678 0.0004 thJC 4 1.2168 0.0092 0.1 0.01 VBE17-12NO7 / VUE22-12NO7 0.001 0.0001 0.001 0.01 0.1 1 s 10 t Fig. 7 Transient thermal resistance junction to case NOTE: Fig. 2 to Fig. 6 shows typical values © 2000 IXYS All rights reserved 2 - 2

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