DATA SHEET SILICON TRANSISTOR m PA800T D HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD E The m PA800T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS U to amplify low noise in the VHF band to the UHF band. (Unit: mm) 2.1±0.1(cid:13) FEATURES 1.25±0.1(cid:13) • Low Noise N • NH|SiF2g1 h=e| 2G1 =.a9 6i nd.5B dTBY PT.Y @P. @f = f2 = G 2H Gz,H VzC, EV =CE 1 = V 1, IVC, =IC 3 = m 3A mA 2.0±0.2 1.3 0.650.65 12 XY 65 +0.10.2 –0 • A Mini Mold Package Adopted I 3 4 • Built-in 2 Transistors (2 · 2SC4228) T 1 ORDERING INFORMATION 0.9±0. 0.7 +0.15 –0 PART NUMBER QUANTITY PACKNING STYLE 0.1 0.1 ~ 0 mPA800T Loose products Embossed tape 8 mm wide. Pin 6 (Q1 (50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) PIN CONFIGURATION (Top View) face to perforation side of the tape. O mPA800T-T1 Taping products (3 KPCS/Reel) 6 5 4 Q1 Remark To order evaluation samples, please contact your nearby sales office. Q2 Part number for sample order: µPA800T-A (Unit Sample quantity is 50 pcs.) C 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 (cid:176) C) PIN CONNECTIONS(cid:13)(cid:13) PARAMETER SYMBOL RATING UNIT 1. Collector (Q1)(cid:13) 4. Emitter (Q2)(cid:13) 2. Emitter (Q1)(cid:13) 5. Base (Q2)(cid:13) S 3. Collector (Q2) 6. Base (Q1)(cid:13) Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 10 V Emitter to Base Voltage VEBO 1.5 V I Collector Current IC 35 mA TDotal Power Dissipation PT 150 in 1 element mW 200 in 2 elementsNote Junction Temperature Tj 150 ˚C Storage Temperature Tstg –65 to +150 ˚C Note 110 mW must not be exceeded in 1 element. The information in this document is subject to change without notice. Document No. ID-3634 (O.D. No. ID-9141) Date Published April 1995 P

m PA800T ELECTRICAL CHARACTERISTICS (TA = 25 (cid:176) C) PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector Cutoff Current ICBO VCB = 10 V, IE = 0 1.0 mA D Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 1.0 mA DC Current Gain hFE VCE = 3 V, IC = 5 mANote 1 80 200 Gain Bandwidth Product fT VCE = 3 V, IC = 5 mA 5.5 80 GHz E Feed-back Capacitance Cre VCB = 3 V, IE = 0, f = 1 MHzNote 2 0.7 pF Insertion Power Gain (1) |S21e|2 VCE = 1 V, IC = 3 mA, f = 2 GHz 4.5 6.5 dB Insertion Power Gain (2) |S21e|2 VCE = 3 V, IC = 5 mA, f = 2 GHz 5.5 7.5 dB U Noise Figure (1) NF VCE = 1 V, IC = 3 mA, f = 2 GHz 1.9 3.2 dB Noise Figure (2) NF VCE = 3 V, IC = 5 mA, f = 2 GHz 1.9 3.2 dB Notes 1. Pulse Measurement: Pw £ 350 m s, Duty cycle £ 2 % N 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank KB I Marking RL T hFE Value 80 to 200 TYPICAL CHARACTERISTICS (TA = 25 (cid:176) C) N PT - TA Characteristics IC - VCE Characteristics 25 W) Free OAir 160 m A m 200 20 P(T mA) 140 m A otal Power Dissipation 100 Per E2le EmleemnetCnts in Total Collector Current I(C 11505 IB =11 462802000000 mmmmmm AAAAAA T 0 S50 100 150 0 5 1.0 Ambient Temperature TA (°C) Collector to Emitter Voltage VCE (V) IIC - VBE Characteristics hFE - IC Characteristics 20 200 VCE = 3 V D VCE = 3 V 100 mA) hFE Current I (C 10 urrent Gain 50 ollector DC C 20 C 10 0 0.5 1.0 0.5 1 5 10 50 Base to Emitter Voltage VBE (V) Collector Current IC (mA) 2

m PA800T Cre - VCB Characteristics fT - IC Characteristics 5.0 10 F) f = 1 MHz Hz) fV =CE 2= G 3H Vz(cid:13) citance C (pre 12..00 Product f (GT 68 D pa h ck Ca 0.5 dwidt 4 E a n b a ed- 0.2 n B 2 Fe Gai 0.1 0 1 2 5 10 20 50 0.5 1 5 10 50 U Collector to Base Voltage VCB (V) Collector Current IC (mA) l S21e l 2 - IC Characteristics | S21e | 2 - f Characteristics N 12 25 2S | (dB)21e 8 Vf =CE 2= G3H Vz(cid:13) 2S | (dB) 21e 20 IVCC =E =5 3m VA(cid:13) Gain | Gain | I15 wer Twer 10 Po 4 Po Insertion N Insertion 5 0 0 0.5 1 5 10 50 0.1 0.5 1.0 2.0 5.0 Collector Current IC (mA) Frequency f (GHz) O NF - IC Characteristics 5 VCE = 3 V(cid:13) f = 2 GHz 4 B) C d e( 3 ur g Fi e 2 s oi N S 1 0 0.5 1 5 10 50 I Collector Current IC (mA) D 3

m PA800T S-PARAMETERS VCE = 3 V, IC = 5 mA, ZO = 50 W FREQUENCY S11 S21 S12 S22 D MHz MAG ANG MAG ANG MAG ANG MAG ANG 100.00 .875 –18.6 14.087 161.1 .018 78.2 .958 –10.1 200.00 .762 –35.0 12.290 145.1 .034 68.6 .888 –17.7 300.00 .677 –47.2 10.888 133.6 .048 66.6 .800 –24.4 400.00 .565 –59.4 9.275 123.6 .055 65.8 .719 –26.7 E 500.00 .495 –67.5 8.300 115.7 .063 63.5 .669 –28.7 600.00 .425 –76.1 7.184 108.9 .074 61.1 .610 –30.3 700.00 .372 –81.6 6.454 104.8 .084 63.8 .600 –30.6 800.00 .327 –88.5 5.818 99.5 .089 62.7 .560 –31.3 900.00 .289 –93.6 5.231 95.5 .092 64.6 .543 –30.1 1000.00 .255 –100.5 4.820 92.0 .104 62.8 U.519 –33.4 1100.00 .236 –105.2 4.444 88.8 .105 64.2 .512 –31.8 1200.00 .214 –112.2 4.142 85.3 .113 64.2 .497 –33.4 1300.00 .195 –117.6 3.842 83.2 .122 63.6 .476 –33.2 1400.00 .182 –123.8 3.554 79.3 .127 65.0 .481 –34.2 1500.00 .165 –129.9 3.343 77.4 .139 64.1 .467 –34.6 1600.00 .153 –137.4 3.218 75.3 .140 64.5 .466 –34.8 N 1700.00 .145 –144.3 3.091 73.6 .152 65.4 .458 –37.2 1800.00 .139 –151.8 2.857 70.4 .162 64.3 .456 –36.1 1900.00 .134 –157.0 2.764 68.7 .168 62.3 .451 –38.4 2000.00 .129 –164.7 2.624 66.4 .176 64.8 .445 –39.0 VCE = 3 V, IC = 3 mA, ZO = 50 W I FREQUENCY S11 S21 T S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG 100.00 .943 –13.4 9.384 165.9 .020 84.1 .969 –7.7 200.00 .868 –26.6 8.668 152.8 .038 77.2 .936 –13.8 300.00 .815 –37.7 8.165 142.9 .051 67.9 .876 –20.9 400.00 .717 –48.9 7.279 N132.9 .062 63.9 .804 –23.5 500.00 .655 –56.8 6.780 125.5 .075 63.9 .764 –26.7 600.00 .577 –65.5 6.061 118.0 .084 60.0 .708 –29.7 700.00 .518 –71.2 5.504 112.8 .091 59.7 .685 –31.1 800.00 .468 –78.1 5.074 106.7 .098 57.0 .639 –32.0 900.00 .420 –83.7 4.632 102.8 .102 59.0 .611 –32.8 1000.00 .380 –90.6 O4.340 98.3 .105 56.6 .592 –35.0 1100.00 .344 –94.8 3.951 94.8 .112 57.8 .579 –34.1 1200.00 .321 –101.6 3.717 90.5 .121 59.0 .551 –35.0 1300.00 .291 –105.9 3.485 87.6 .128 58.7 .532 –35.9 1400.00 .273 –111.7 3.306 84.3 .135 59.8 .535 –36.6 1500.00 .250 –117.2 3.134 80.7 .140 58.0 .511 –37.5 1600.00 .228 –122.4 2.959 79.0 .145 59.5 .516 –37.7 1700.00 .219 C–128.5 2.819 76.0 .153 59.0 .504 –39.0 1800.00 .199 –135.3 2.699 73.9 .161 58.4 .493 –39.9 1900.00 .193 –139.6 2.572 71.9 .163 60.3 .489 –41.4 2000.00 .182 –146.9 2.474 68.3 .175 59.8 .482 –41.4 VCE = 3 V, IC = 1 mA, ZO = 50 W S FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG 100.00 1.023 –7.6 3.505 172.1 .025 86.4 .995 –4.6 200.00 .983 –16.1 3.400 163.3 .039 79.3 .986 –7.8 I 300.00 .975 –22.4 3.368 157.3 .061 74.6 .976 –12.8 400.00 .922 –31.8 3.219 149.1 .075 70.7 .936 –15.1 D500.00 .899 –36.9 3.186 143.3 .093 66.4 .922 –18.8 600.00 .849 –44.7 3.046 135.7 .105 62.2 .885 –22.5 700.00 .812 –50.6 2.905 131.1 .113 61.7 .880 –24.4 800.00 .774 –57.1 2.830 124.4 .128 55.7 .846 –27.2 900.00 .727 –62.9 2.694 119.2 .134 55.6 .808 –28.8 1000.00 .680 –69.3 2.597 114.1 .146 53.7 .790 –31.8 1100.00 .651 –74.1 2.479 109.3 .146 50.3 .766 –32.8 1200.00 .616 –79.8 2.392 104.8 .155 49.8 .741 –34.9 1300.00 .575 –85.2 2.302 101.1 .155 46.2 .714 –35.9 1400.00 .546 –90.6 2.207 96.0 .160 46.7 .708 –36.8 1500.00 .512 –95.8 2.110 92.1 .168 43.6 .685 –38.4 1600.00 .481 –100.6 2.034 88.8 .165 45.5 .676 –40.1 1700.00 .463 –106.3 1.989 85.5 .176 45.3 .667 –41.8 1800.00 .440 –111.8 1.903 82.2 .173 43.8 .649 –42.3 1900.00 .419 –116.4 1.854 78.9 .174 43.5 .633 –44.2 2000.00 .394 –121.2 1.779 75.5 .173 43.7 .630 –45.2 4

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