This product complies with the RoHS Directive (EU 2002/95/EC). Composite Transistors UP0121MG Silicon NPN epitaxial planar type For switching circuits For digital circuits /  Features e  Package  Two elements incorporated into one package  Code (Emitter-coupled transistors with built-in resistor) c SSMini5-F3  SSMini type package, reduction of the mounting area and assembly cost  Pind Name n 1: Base (Tr1) 4: Collector (Tr2)  Basic Part Number e 2: Emitter 5: Collector (Tr1) e.  UNR221M × 2 a 3: Baser (Tr2) g a u st e  Absolute Maximum Ratings Ta = 25°Cn  Marking Syymclbol: EM n c Parameter Symbol Rating Unit e Collector-base voltage (Emitter open) eVCBO 50 V  Intecrtn laifl Connection i u d Collector-emitter voltage (Base opten) VCEO 50tV ro (C1) (C2) Collector current n IC n100 mA r P 5 4 u o Total power dissipatioin PTo 125 mW g f pe Tr1 Tr2 n. JSCCut ooonEllrcllaeelteigccoctteoon ttrr ret--iembecmMmaapspliee teCr tvearaPrtohu tlvuaartoaaerrregalateamc g(teEeeD tm(reBirsiitattsiecers oo pp Teesnna ))= 25c°DiCs±TcTS3stoVjV°ygCmnCCtBEibOOnolu–5e5IIdCC 1ti o==2pn l5 +12ca1l0 m2 num5AedA,de , pI lsIBE m amf= C=a°°na oii0 loCC0lennntotdd eeiwtdindiinoinasansncsnccocoenen t ttitgi ynynpuUueeeRddL ttoayynb.ppopeeuadMt55 n00ilnaats(eoB1sn1ti4R2 )T7.icR12 .k 2yknΩΩ(cpfE242oo)7..R2r jk 2kRΩΩp1(m/B3aMe2ti)na/ox UVVnit Collector-base cutoff current (Emitter cope/en) ICBO VCB = 50 V, IE = 0 win mic 0.1 mA n o e ECmoliltetcetro-br-aesme ictutetro fcfu ctoufrfr ecnutr r(eCnnott l le(eBcntaaosre o oppeenn)) IICEBEOO VVCEBE == 560 V V, I, CI B= = 0s i0t follww.s 00..52 mmAA ai vi w Forward current transfer rMatio hFE VCE = 10 Vs,e I C = 5 mp:A// 80  Collector-emitter saturation voltage VCE(sat) IC = 10e maA, IB =h t0t.3 mA 0.25 V Output voltage high-level V V P=l 5 V, V = 0.5 V, R = 1 kW 4.9 V OH CC B L Output voltage low-level V V = 5 V, V = 2.5 V, R = 1 kW 0.2 V OL CC B L Input resistance R -30% 2.2 +30% kW 1 Resistance ratio R / R 0.047  1 2 Transition frequency f V = 10 V, I = —2 mA, f = 200 MHz 150 MHz T CB E Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: September 2007 SJJ00367AED 1

This product complies with the RoHS Directive (EU 2002/95/EC). UP0121MG UP0121M_PT-Ta UP0121M_IC-VCE UP0121M_VCE(sat)-IC P  T I  V V  I T a C CE CE(sat) C V) 10 W) 120 200 TaI = = 215.0° mCA (CE(sat) IC /IB = 30 wer dissipation P (mT 80 ector current I (mA)C100 eB/00000.....98765 mmmmmAAAAA er saturation voltage V 10−11 Ta = 85°C Total po 40 Coll c 0.4 mA or-emitt 25°C −25°C 0.3 mA dct e n 0.2 mA oll 0 0 C 10−2 0 40 80 120 0 4 8 e12 1 10 102 103 e. Ambient temperature Ta (°C) aCollector-emitter voltage VCE (V) Collectoar gcurrent IC (mA) UP0121M_ hFE-IC UP0121M_Cob-uVCB e UstP0121M_IO-VIN hFE  IC n Cob  VCB cl IO  VIN y Forward current transfer ratio hFE12001100000M−1 Colla1eUcPtio0rV1 Dc2IuN1Tr1M iar0 e=_nn V 8tI 5O II°NCCt−-Vs I12 O(C05mE2°2 Cc=5A° e1)C/0ec VDi10s3coCollector output capacitanceonti (Common base, input open circuited) C (pF)nob1u01−e011n0d iCpnoltlcalleincu1teo0drde- pblsa mamsfenanaoi il2vlen0ontotldt eaewgdindineina safTs V3gn=acnc 0 =Cwfc1ocio B 2oeMnen n5 t tut(i°HtgiVCr yzn yn)puU4puP0reemeeRioddLc dttoauyyOutput current I (mA)ncOb.ppt ope1el1i0uad1f0−t0121 nel0acatsVTeoaO = sn=Iti n2 5ic5p .°VunCcft voo.orj1ltpam/gaeet in V/oInN. (V2) n o e V (V)IN Maintena se visit fp:o/l/lwww.s ge 1 ea htt olta Pl v ut p n I V = 0.2 V O T = 25°C 10−1 a 10−1 1 10 102 103 Output current I (mA) O 2 SJJ00367AED

This product complies with the RoHS Directive (EU 2002/95/EC). UP0121MG SSMini5-F3 Unit: mm / e 1.60 ±0.05 c 5 0 0. 0.20+−00..0025 d20 ± n 0. e 5 4 e. a g a u st e n cl 0.05 0.05n ecy e 1.20 ± 1.60 ± ct lif i u d t t o r n n 5)°r P (u 1 2 3 o i(0.5) (0.5o) ng f ype0.13+−00..0025 on. M a(5°D) is1c.e0/0c D±i0s.05continued ipnlcalnuedde p55ls 0.05± mamfanaoiillenntotd eewdindiniasasncncwcocioenenn t ttitgi ynnpuUueemeRiddLc ttoayynb.ppopeeuadt nlaatseosnti ic.ncfoo.rjpm/aetin/(0.27) ntenan 05 0. sit followw.se Mai 0 to 0.se vi p://w ea htt Pl SJJ00367AED 3

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1)(cid:9)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)(cid:9)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3)(cid:9)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office / equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applicateions: (cid:150) Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod- c ucts may directly jeopardize life or harm the human body. (cid:150) Any applications other than the standard applications intended. d n (4)(cid:9)The products and product specifications described in this book are subject to change without notice for modification and/or im- e provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upe-t.o-date Product Standards in advance to make sure that the latest spaecifications satisfy your requirements. ag u st (5)(cid:9)When designing your equipment, comply with the range of absolute maximum rating and the guarantee ed operating conditions (operating power supply voltage and opernating environment etc.). Especially, please be careful not to yexclceed the range of absolute maximum rating on the transient state, such as power-on, power-onff and mode-switching. Otherwiseec, we will not be liable for any (cid:9) dEevfeecnt wwhheicnh t hmea pyr aordiusec tlsa taerre i nu syeodeu wr eitqhuinip tmhee ngt.uaranteed values, take into the consideration ocf ti nlicfidence of break down and failure i u mode, possible to occur to semiconductor products. Measures on the systems such as redudndant design, arresting the spread of fire or preventing glitch are retcommended in order to prevetnt physical injury, fire, social damoages, for example, by using the products. r n n r P (6)(cid:9)Comply with the instructions for use in order to prevent breakdown and characteruistics change due to external factors (ESD, EOS, o tdhaemrmp-apl rostorfe spisa caknidn gm iesc rheaqnuiicraeld s, tsraetsiss)f ya tt hteho ec otinmdiet ioofn sh, asnudclhin ags, smheoluf nlitfine ga nodnr gtah tfe c eulsatpoysmepdeer t'sim per oscinecsse. fWirsht eonp eunsiinngg tphreo dpuaccktsa ogfoenrs. .which (7)(cid:9)TEMhleics trbioc oIkna dmusatyriD abl eCi noo.,t Lrtedps.rinted coDri srecproondtuicnedu ewdh ietpnhlecalr nuwedhdoe pllsly mamf aonaoiilrl ennptotda erewtdinidinaialsaslyncnc,c ocowenen ti tttitgih ynonupuUute eeRthddL e t topayynrb.pipoopere uadwt nrliatattseneo spntie ricm.ncfisoso.irjonpm/ oaetfi nM/atsushita ce/ win mic n o e ntena sit follww.s ai vi w M se p:// ea htt Pl