This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR31AE Silicon PNP epitaxial planar type Unit: mm For digital circuits /0.33+–00..0025 0.10+–00..0025 e 3 ■••SCFuoeintaatrbtilbueu rfetoers thoi glohw-d epnoswitye rm coounnstuinmgp atniodn downsizing of tnhe equicpment 0.23+–00..0025 d(0.140)(0.240) 0.80min.±0.05 1.20±0.05 °5 0.15 min. ■ Absolute Maximum Ratings Ta = 25°aC e5° 10..2800±±00..0055 0.15 age. Collector-basPea vraolmtaegtee (rEmitter open) SVynmCBbOol R−a5ti0ng UVnit u yc1le s0.52±0.03t CCoolllleeccttoorr- ceumrirtetnert voltage (Base opeen) VICCEO −−5800 nmVA ct lifec0 to 0.0 1: Base 0.15 max. i u Total power dissipation t PT 1t00 mW od 23:: ECmoliltetcetror JSutonrcatgioen t etemmppeeraratutureren TTstjg −n55 1to2 5+125 °°CC ur Pr SSSMini3-F1 Package oMarking Symbol: DL i o g f pe n. ■CCooEMllllleeecccttootrrr--ibeacmaasiePlt tCaveDror halvtmaaoiglreteaat eg(cEert m(esBirtaitssecert ieooc/ppsceeD nni ))Tsac =oS nVVy2timCC5BEn°bOOCuole ±d IIi3CCp°n l==Cca l−−nu12 0edm µdeA pAls, m,amfI CIBanaEoi iol= l=enn nt 0otdd0 eietwdiindoininnasassncncwcocioenenn tI ttintgi yntynepuUurenemeRiaddLc l t toCayyn ob.p(pB2nM−−ope2eRR55ni uadn100k2et nΩ(cl4a)t7aitso kTneoΩysn)pti ic.ncfMoo.rjaECxpm/aetin/oUVVnit CCEmoollillteetccettroo-brr--aebsmaes icetut cetur- otc-fuoft fac-fiou cfrnufrt ercrnueetrn rn(teC n(aoEt lnm(leBictattsoeerr ooopppeeennn))) IIICCEBBEOOO VVVCCEBEB === −−−5650 0V VV, v,I, i CII BEs=i t== 0 f00ollowww.se −−− 000...152 mµµAAA Forward current Mtransfer ratio hFE VCE = −1s0e V , IC = p−:5// mA 60  Collector-emitter saturation voltage VCE(sat) IC = −e1a0 mA, IBht =t − 0.3 mA − 0.25 V Output voltage high level V V Pl = −5 V, V = − 0.5 V, R = 1 kΩ −4.9 V OH CC B L Output voltage low level V V = −5 V, V = −6 V, R = 1 kΩ − 0.2 V OL CC B L Input resistance R −30% 47 +30% kΩ 1 Resistance ratio R / R 1.7 2.14 2.6  1 2 Transition frequency f V = −10 V, I = 1 mA, f = 200 MHz 80 MHz T CB E Note)Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: May 2005 SJH00077BED 1

This product complies with the RoHS Directive (EU 2002/95/EC). UNR31AE P  T I  V V  I T a C CE CE(sat) C 120 −90 − 0.9 mAIB = −1.0 mA Ta = 25°C V) −1 Total power dissipation P (mW)T10864200000 Collector current I (mA)C−−−−−−−87653420000000 −− 0 0.−6. 7 0m .m8A AmnA ce−−−−− 00000.....54321/ mmmmmAAAAA or-emitter saturation voltage V (CE(sat)d− 0.1 25°CTa = 8−52°5C°C 00 A2m0bie4n0t tem60pera8t0ure 1 0T0a (1°2C0) 140 −100a0Colle−c2tor-e−m4itter− 6volta−g8e uV−C1E0 (V−)1e2 Collect− 0.0−1 0.1 Collec−to1er csutrraengt e −I.1C0 I(Cm / IAB )= 10−100 n cl y n c e Forward current transfer ratio hFE−M121210505050000000−1VVOC E= = C−a −o 01l.l02ie VcVtoDVhrF Ic2NEiu5− r°1rCne0nT tII a CO=It−C s28 55(n°°mCCcAe)/ecD−i10s0coonCollector output capacitancet (pF)Ciob (Common base, input open circuited) nu1e100nd iCp−onlt5llcaelc−intu1o0erCd-b−deo1 apbl5ss emamf −va2naooi0 illVletnan−toCgtd2 e5Bee wfT din−V din=ai3 n=Ca0s1aso B 2gMnc n−5c (w°3HfcoVciCo5zoe)nenn −t tuti4tgir0 yn ynepuUpuPreemeeRiodOutput current I (mA)dLc O dtto−−auy−y 1n0−01cb.p.−p1001t ope0el.i2uadTVftaO n −l= =1 a2 a.−I25tsn5°p CeoVu−snt2I ti.vO2 oic .ltn−acf3g .oeo2V. rj VIN−pIm4/N. 2a e(tVin−/)o5.n2.−6.2 Ta = 25°C ntena sit follww.s ai vi w ge V (V)IN−10 M Please http:// a olt v put −1 n I − 0.1 − 0.1 −1 −10 −100 Output current I (mA) O 2 SJH00077BED

Request for your special attention and precautions in using the technical information and semiconductors described in this book (1)(cid:9)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2)(cid:9)The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3)(cid:9)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office / equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applicateions: (cid:150) Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod- c ucts may directly jeopardize life or harm the human body. (cid:150) Any applications other than the standard applications intended. d n (4)(cid:9)The products and product specifications described in this book are subject to change without notice for modification and/or im- e provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most upe-t.o-date Product Standards in advance to make sure that the latest spaecifications satisfy your requirements. ag u st (5)(cid:9)When designing your equipment, comply with the range of absolute maximum rating and the guarantee ed operating conditions (operating power supply voltage and opernating environment etc.). Especially, please be careful not to yexclceed the range of absolute maximum rating on the transient state, such as power-on, power-onff and mode-switching. Otherwiseec, we will not be liable for any (cid:9) dEevfeecnt wwhheicnh t hmea pyr aordiusec tlsa taerre i nu syeodeu wr eitqhuinip tmhee ngt.uaranteed values, take into the consideration ocf ti nlicfidence of break down and failure i u mode, possible to occur to semiconductor products. Measures on the systems such as redudndant design, arresting the spread of fire or preventing glitch are retcommended in order to prevetnt physical injury, fire, social damoages, for example, by using the products. r n n r P (6)(cid:9)Comply with the instructions for use in order to prevent breakdown and characteruistics change due to external factors (ESD, EOS, o tdhaemrmp-apl rostorfe spisa caknidn gm iesc rheaqnuiicraeld s, tsraetsiss)f ya tt hteho ec otinmdiet ioofn sh, asnudclhin ags, smheoluf nlitfine ga nodnr gtah tfe c eulsatpoysmepdeer t'sim per oscinecsse. fWirsht eonp eunsiinngg tphreo dpuaccktsa ogfoenrs. .which (7)(cid:9)TEMhleics trbioc oIkna dmusatyriD abl eCi noo.,t Lrtedps.rinted coDri srecproondtuicnedu ewdh ietpnhlecalr nuwedhdoe pllsly mamf aonaoiilrl ennptotda erewtdinidinaialsaslyncnc,c ocowenen ti tttitgih ynonupuUute eeRthddL e t topayynrb.pipoopere uadwt nrliatattseneo spntie ricm.ncfisoso.irjonpm/ oaetfi nM/atsushita ce/ win mic n o e ntena sit follww.s ai vi w M se p:// ea htt Pl