This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNR31A0G Silicon PNP epitaxial planar type / For digital circuits e ■ Features c ■ Package •Suitable for high-density mounting and downsizing of the equipment •Code d . e •Contribute to low power consumption n SSSMini3-F2 g a •Maerking Symbol: CD t s •Pin Name e ■ Absolute Maximum Ratings T = 25°Ca 1: Base cl a u y 2: Emitter c Parameter Symbol Rating Unit e n 3: Collector f Collector-base voltage (Emitter open) VCBO −50 Vn t li Collector-emitter voltage (Base open) VCEO −50 V ■ Internal Councnection Collector current e IC −80 imA roRd (47 kΩ) Total power dissipation P 100 mW P 1 C T t B Junction temperature t Tj n125 °C ur . Storage temperaturen Tstg −55 to +125 °C g fo pe E tion n y a i o wi e t d m r a c s folloenance typed type st info ■MElectricaDl Ciharacsteristics Ta = 25e°Cd i ±n 3c°lnCuedd e maiaintntensacnocntinnuueed taybpoeut nleatt/esc/en CCoolllleeccttoorr--bemasiePt taveror alvtmaogleteat eg(Eer m(Bitatseesr oocppoeennn))tinSVVyumCCBEbOOolplIIaCC == −−21pl 0m aµmAAn, ,I CeIBE o= d=n 0 d0ddiiitiosncsonngt iU nRaL soM−−n55iin00c. Typ Max UVVnit Collector-base cutoff current (EmDiitter open) ICBO VCB = −50 V, IE = 0 wi a − 0.1 µA CEFmoorlilwtetceatror-dbr-a ecsmue rictruteetnro nftcf ut cartouafrnnfr seccfnuetr rer( eC/rnaottl i(loeBcatoser ooppeenn)) IIhCEFBEEOO VVVCECBEE === −−−56100 Vs iVV,t ,,I CfII CB= o== l0l −0o5h tmtAp://p 160 −−4 060.0.051 mµAA Collector-netmeitter saturation voltage VCE(sat) IC = e− 1v0i mA, IB = − 0.3 mA − 0.25 V OutpMuta ivoltage high-level VOH aVCsC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9 V Output voltage low-level V eV = −5 V, V = −2.5 V, R = 1 kΩ − 0.2 V OLPl CC B L Input resistance R −30% 47 +30% kΩ 1 Transition frequency f V = −10 V, I = 1 mA, f = 200 MHz 80 MHz T CB E Note)Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: June 2007 SJH00160AED 1

This product complies with the RoHS Directive (EU 2002/95/EC). UNR31A0G P  T I  V V  I T a C CE CE(sat) C ()Total power dissipation P mWT11208642000000 Collector current I (mA)C−−−−86420000 T−a 0=.− 62 05m.°7AC mA− 0.8− m0.A9 mAIB =−− −−−− 001000......540132 mmmmmmAAAAAA ctor-emitter saturation voltage V (V)CE(sat)−− 0−1.011 25T°Ca = 85°C −25°C e 00 40 80 120 00 −2 −4 −6 −8 −10 −12 Coll− 0.0−1 0.1 −1 −10IC / IB = 10−100 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector current IC (mA) h  I C  V I  V FE C ob CB O IN E400 Ta = 85°C VCE = −10 V (pF)Cob 10 fT =a =1 2M5°HCz −10 VTaO = = 2 −55° CV Forward current transfer ratio hF312000000 −2255°°CC or output capacitancemon base, input open circuited) Output current I (mA)O −1 ctm 0 Colle (Co 1 − 0.1 −1 −10 −100 0 −8 −16 −24 −32 −40 0 − 0.8 −1.6 Collector current IC (mA) Collector-base voltage VCB (V) Input voltage VIN (V) V  I IN O −10 VO = − 0.2 V Ta = 25°C V) (N VI ge −1 a olt v ut p n I − 0.1 − 0.1 −1 −10 −100 Output current I (mA) O 2 SJH00160AED

This product complies with the RoHS Directive (EU 2002/95/EC). SSSMini3-F2 Unit: mm 1.20 ±0.05 5 0 0. 0.30+−00..0025 20 ± 0. 3 0 ±0.05 0 ±0.05 8 2 0. 1. ° 5 1 2 0.20+−00..0025 0.13+−00..0025 (0.4) (0.4) 0.80 ±0.05 5° 7) 2 0. ( 4 0 5) ±0. 0. 1 ( 5 0. 5 0 0. o 0 t

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