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ICGOO电子元器件商城为您提供TS5A12301EYFPR由Texas Instruments设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 TS5A12301EYFPR价格参考¥1.82-¥4.50。Texas InstrumentsTS5A12301EYFPR封装/规格:接口 - 模拟开关,多路复用器,多路分解器, 1 Circuit IC Switch 2:1 750 mOhm 6-DSBGA。您可以下载TS5A12301EYFPR参考资料、Datasheet数据手册功能说明书,资料中有TS5A12301EYFPR 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

集成电路 (IC)半导体

描述

IC SWITCH SPDT 6DSBGA模拟开关 IC IEC Lev 4 ESD Prot 0.75Ohm SPDT Ana Sw

产品分类

接口 - 模拟开关,多路复用器,多路分解器

品牌

Texas Instruments

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

开关 IC,模拟开关 IC,Texas Instruments TS5A12301EYFPR-

数据手册

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产品型号

TS5A12301EYFPR

PCN组件/产地

点击此处下载产品Datasheet

产品培训模块

http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=26070

产品目录页面

点击此处下载产品Datasheet

产品种类

模拟开关 IC

供应商器件封装

6-DSBGA

其它名称

296-23757-1

制造商产品页

http://www.ti.com/general/docs/suppproductinfo.tsp?distId=10&orderablePartNumber=TS5A12301EYFPR

功能

开关

包装

剪切带 (CT)

商标

Texas Instruments

安装类型

表面贴装

安装风格

SMD/SMT

导通电阻

750 毫欧

导通电阻—最大值

1.3 Ohms

封装

Reel

封装/外壳

6-XFBGA,DSBGA

封装/箱体

DSBGA-6

工作温度

-40°C ~ 85°C

工作电源电压

2.25 V to 5.5 V

工厂包装数量

3000

开关数量

1

开关配置

SPDT

最大工作温度

+ 85 C

最小工作温度

- 40 C

标准包装

1

电压-电源,单/双 (±)

2.25 V ~ 5.5 V

电压源

单电源

电流-电源

10µA

电源电压-最大

5.5 V

电源电压-最小

2.25 V

电源电流—最大值

10 uA

电路

1 x SPDT

空闲时间—最大值

215 ns

系列

TS5A12301E

运行时间—最大值

225 ns

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PDF Datasheet 数据手册内容提取

Product Sample & Technical Tools & Support & Reference Folder Buy Documents Software Community Design TS5A12301E SCES707C–AUGUST2008–REVISEDDECEMBER2016 TS5A12301E IEC Level 4 ESD-protected 0.75-Ω SPDT Analog Switch With 1.8-V Compatible Input Logic 1 Features 2 Applications • LowON-StateResistance(0.75Ω) • CellPhones 1 • LowChargeInjection • PDAs • ExcellentON-StateResistanceMatching • PortableInstrumentation • IsolationinPower-DownMode,V =0 • MP3Players CC • SpecifiedBreak-Before-MakeSwitching • PortableMediaPlayers • 2.25-Vto5.5-VPowerSupply(V ) CC 3 Description • 6-MΩInputPulldownAllowsControlInput(IN)to The TS5A12301E device is a bidirectional, 1-channel, BeUnconnected single-pole double-throw (SPDT) analog switch that is • 1.8-VCompatibleControlInputThreshold designed to operate from 2.25 V to 5.5 V. The device IndependentofV CC offers a low ON-state resistance with excellent • Latch-UpPerformanceExceeds100mAPer channel-to-channelON-stateresistancematchingand JESD78,ClassII the break-before-make feature to prevent signal distortion during the transferring of a signal from one • ESDPerformanceTestedPerJESD22 pathtoanother. – 3000-VHuman-BodyModel (A114-B,ClassII) The device has excellent total harmonic distortion (THD) performance and consumes very low power. – 1000-VCharged-DeviceModel(C101) These features make this device suitable for portable • ESDPerformanceCOMPorttoGND audio applications. The control input (IN) pin can be – 8000-VHuman-BodyModel connected to low-voltage GPIOs, allowing it to be (A114-B,ClassII) controlledby1.8-Vsignals. – ±8-kVContactDischarge The TS5A12301E has ±15-kV air-gap discharge and (IEC61000-4-2) ±8-kV contact discharge ESD protection for the COM port to GND, which makes it compliant with the IEC – ±15-kVAir-GapDischarge Level4ESDstandard(IEC61000-4-2). (IEC61000-4-2) DeviceInformation(1) PARTNUMBER PACKAGE BODYSIZE(NOM) TS5A12301E DSBGA(6) 1.16mm×0.76mm (1) For all available packages, see the orderable addendum at theendofthedatasheet. SimplifiedSchematic V NC CC COM GND IN NO Copyright © 2016,Texas Instruments Incorporated 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

TS5A12301E SCES707C–AUGUST2008–REVISEDDECEMBER2016 www.ti.com Table of Contents 1 Features.................................................................. 1 8.2 FunctionalBlockDiagram.......................................16 2 Applications........................................................... 1 8.3 FeatureDescription.................................................16 3 Description............................................................. 1 8.4 DeviceFunctionalModes........................................16 4 RevisionHistory..................................................... 2 9 ApplicationandImplementation........................ 17 9.1 ApplicationInformation............................................17 5 PinConfigurationandFunctions......................... 3 9.2 TypicalApplication..................................................17 6 Specifications......................................................... 4 10 PowerSupplyRecommendations..................... 18 6.1 AbsoluteMaximumRatings......................................4 11 Layout................................................................... 18 6.2 ESDRatings..............................................................4 6.3 RecommendedOperatingConditions.......................4 11.1 LayoutGuidelines.................................................18 6.4 ThermalInformation..................................................5 11.2 LayoutExample....................................................18 6.5 ElectricalCharacteristics–5-VSupply.....................5 12 DeviceandDocumentationSupport................. 19 6.6 ElectricalCharacteristics–3.3-VSupply..................7 12.1 ReceivingNotificationofDocumentationUpdates19 6.7 ElectricalCharacteristics–2.5-VSupply..................8 12.2 CommunityResources..........................................19 6.8 TypicalCharacteristics............................................10 12.3 Trademarks...........................................................19 7 ParameterMeasurementInformation................12 12.4 ElectrostaticDischargeCaution............................19 12.5 Glossary................................................................19 8 DetailedDescription............................................ 16 13 Mechanical,Packaging,andOrderable 8.1 Overview.................................................................16 Information........................................................... 19 4 Revision History NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion. ChangesfromRevisionB(April2011)toRevisionC Page • AddedESDRatingstable,FeatureDescriptionsection,DeviceFunctionalModes,ApplicationandImplementation section,PowerSupplyRecommendationssection,Layoutsection,DeviceandDocumentationSupportsection,and Mechanical,Packaging,andOrderableInformationsection.................................................................................................. 1 • ChangedallreferencesofV+pintoV ................................................................................................................................ 1 CC • DeletedOrderingInformationtable;seePOAattheendofthedatasheet........................................................................... 1 • DeletedSummaryofCharacteristicstable ............................................................................................................................ 1 • Changedcontinuouscurrentparametersymbolfrom:I+to:ICC........................................................................................... 4 • Movedtheon-stateswitchcurrentandon-statepeakswitchcurrentparameterstotheRecommendedOperating Conditions............................................................................................................................................................................... 4 • ChangedRthetaJAvaluefortheYFPpackagefrom:154.2°C/Wto:123.4°C/W.................................................................. 5 • RemovedanalogsignalrangeparametersfromtheElectricalCharacteristicstables........................................................... 5 • DeletedLeakageCurrentvsTemperature(V =5V)graph.............................................................................................. 10 CC • DeletedControlInputThresholdsgraph............................................................................................................................... 10 • AddedohmsymbolstoFigure18,Figure19,andFigure22 .............................................................................................. 14 ChangesfromRevisionA(December2009)toRevisionB Page • AddedLogicDiagram............................................................................................................................................................. 1 2 SubmitDocumentationFeedback Copyright©2008–2016,TexasInstrumentsIncorporated ProductFolderLinks:TS5A12301E

TS5A12301E www.ti.com SCES707C–AUGUST2008–REVISEDDECEMBER2016 5 Pin Configuration and Functions YFPPackage 6-PinDSBGA TopView YFP PACKAGE C C B B A A 2 1 1 2 (Laser MarkingView) (BumpView) PinFunctions PIN I/O DESCRIPTION NAME NO. COM B2 I/O Commonsignalpath GND B1 — Ground Digitalcontrol: High=COMconnectedtoNO IN A2 I Low=COMconnectedtoNC Floating=COMconnectedtoNC NC C1 I/O Normallyclosedsignalpath NO A1 I/O Normallyopensignalpath V C2 — Powersupply CC Copyright©2008–2016,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:TS5A12301E

TS5A12301E SCES707C–AUGUST2008–REVISEDDECEMBER2016 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings overoperatingfree-airtemperaturerange(unlessotherwisenoted)(1)(2) MIN MAX UNIT V Supplyvoltage(3) –0.5 6.5 V CC V , NC V , Analogvoltage(3)(4) –0.5 V +0.5 V NO CC V COM V <V ,V ,V ,or I Analogportdiodecurrent CC NC NO COM –50 50 mA IK V ,V ,V <0 NC NO COM V Digitalinputvoltage(3)(5) –0.5 6.5 V IN I Digitalinputclampcurrent V <0 –50 mA IK I ICC, ContinuouscurrentthroughV orGND –100 100 mA I CC GND T Storagetemperature –65 150 °C stg (1) StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestressratings only,whichdonotimplyfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderRecommended OperatingConditions.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. (2) Thealgebraicconvention(wherebythemostnegativevalueisaminimumandthemostpositivevalueisamaximum) (3) Allvoltagesarewithrespecttoground(unlessotherwisespecified). (4) Thisvalueislimitedto5.5Vmaximum. (5) Theinputandoutputvoltageratingsmaybeexceedediftheinputandoutputclamp-currentratingsareobserved. 6.2 ESD Ratings VALUE UNIT Human-bodymodel(HBM),perANSI/ESDA/JEDECJS-001(1) ±8000 Charged-devicemodel(CDM),perJEDECspecificationJESD22-C101(2) ±8000 V Electrostaticdischarge V (ESD) Contactdischarge(IEC61000-4-2) 8000 Air-gapdischarge(IEC61000-4-2) 15000 (1) JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess. (2) JEDECdocumentJEP157statesthat250-VCDMallowssafemanufacturingwithastandardESDcontrolprocess. 6.3 Recommended Operating Conditions overoperatingfree-airtemperaturerange(unlessotherwisenoted) MIN MAX UNIT V Supplyvoltage 2.25 5.5 V CC V , NC V , Analogvoltage 0 V V NO CC V COM V Digitalinputvoltage 0 5.5 V IN I , On-stateswitchcurrent V ,V ,V =0toV –450 450 NC NC NO COM CC I , mA INCOOM On-statepeakswitchcurrent(1) VNC,VNO,VCOM=0toVCC –700 700 T Operatingtemperature –40 85 °C A (1) Pulseat1-msduration<10%dutycycle 4 SubmitDocumentationFeedback Copyright©2008–2016,TexasInstrumentsIncorporated ProductFolderLinks:TS5A12301E

TS5A12301E www.ti.com SCES707C–AUGUST2008–REVISEDDECEMBER2016 6.4 Thermal Information TS5A12301E THERMALMETRIC(1) YFP(DSBGA) UNIT 6PINS R Junction-to-ambientthermalresistance(2) 123.4 °C/W θJA R Junction-to-case(top)thermalresistance 1.9 °C/W θJC(top) R Junction-to-boardthermalresistance 37.6 °C/W θJB ψ Junction-to-topcharacterizationparameter 0.4 °C/W JT ψ Junction-to-boardcharacterizationparameter 37.7 °C/W JB (1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplication report. (2) ThepackagethermalimpedanceiscalculatedinaccordancewithJESD51-7. 6.5 Electrical Characteristics – 5-V Supply V =4.5Vto5.5VandT =–40°Cto85°C(unlessotherwisenoted)(1) CC A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT ANALOGSWITCH r ON-stateresistance VNOorVNC=2.5V,ICOM=–100mA, TA=25°C 0.5 0.75 Ω on andVCC=4.5V(seeFigure12) TA=–40°Cto85°C 0.8 ON-stateresistance T =25°C 0.05 0.1 V orV =2.5V,I =–100mA, A Δr matchbetween NO NC COM Ω on channels andVCC=4.5V(seeFigure12) TA=–40°Cto85°C 0.1 0≤(V orV )≤V ,I =–100mA,V =4.5V, NO NC CC COM CC 0.15 andT =25°C(seeFigure12) A ON-stateresistance ron(flat) flatness VNOorVNC=1V,1.5V,2.5V, TA=25°C 0.1 0.2 Ω I =–100mA,andV =4.5V COM CC (seeFigure12) TA=–40°Cto85°C 0.25 V =1V,4.5V,V =4.5V,1V, T =25°C –20 2 20 NO COM A I , NOandNCOFF V =open,orV =1V,4.5V, NO(OFF) NC NO nA INC(OFF) leakagecurrent VCOM=4.5V,1V,VNO=open,and TA=–40°Cto85°C –100 100 V =5.5V(seeFigure13) CC INO(PWROFF), NOandNCPWROFF VNOorVNC=0Vto5.5V,VCOM=5.5V TA=25°C –10 10 µA INC(PWROFF) leakagecurrent to0V,andVCC=0V(seeFigure13) TA=–40°Cto85°C –10 10 V =1V,4.5V,V ,V =open,or T =25°C –20 2 20 NCandNOON NO COM NC A I V =1V,4.5V,V ,V =open, nA NO(ON) leakagecurrent anNdCVCC=5.5V(seCeOMFiguNreO14) TA=–40°Cto85°C –200 200 V =1V,4.5V,V andV =open, T =25°C –20 2 20 COM NO NC A I COMONleakage orVCOM=1V,4.5V,VNOor nA COM(ON) current VNC=open,andVCC=5.5V(see TA=–40°Cto85°C –200 200 Figure14) I COMOFFleakage VNOorVNC=0Vto5.5V,VCOM=5.5V TA=25°C –10 10 µA COM(PWROFF) current to0V,andVCC=0V(seeFigure13) TA=–40°Cto85°C –10 10 DIGITALCONTROLINPUT(IN) V Inputlogichigh V =5.5VandT =–40°Cto85°C 1.05 5.5 V IH CC A V Inputlogiclow V =5.5VandT =–40°Cto85°C 0 0.65 V IL CC A I , IH Inputleakagecurrent V =1.95Vor0V,V =5.5V,andT =–40°Cto85°C –0.05 0.5 µA I IN CC A IL r Inputresistance V =1.95V,V =5.5V,andT =–40°Cto85°C 6 MΩ IN IN CC A (1) Thealgebraicconvention(wherebythemostnegativevalueisaminimumandthemostpositivevalueisamaximum) Copyright©2008–2016,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:TS5A12301E

TS5A12301E SCES707C–AUGUST2008–REVISEDDECEMBER2016 www.ti.com Electrical Characteristics – 5-V Supply (continued) V =4.5Vto5.5VandT =–40°Cto85°C(unlessotherwisenoted)(1) CC A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT DYNAMIC V =5Vand CC 110 225 t Turnontime VCOM=VCC,RL=50Ω,CL=35pF TA=25°C ns ON (seeFigure16) V =4.5Vand CC 250 T =–40°Cto85°C A V =5Vand CC 100 215 t Turnofftime VCOM=VCC,RL=50Ω,CL=35pF TA=25°C ns OFF (seeFigure16) V =4.5Vand CC 225 T =–40°Cto85°C A V =5Vand CC 1 10 15 t Break-before-make VCOM=VCC,RL=50Ω,CL=35pF TA=25°C ns BBM time (seeFigure17) V =4.5Vand CC 1 20 T =–40°Cto85°C A V =0,R =0,C =1nF,V =5V,andT =25°C Q Chargeinjection GEN GEN L CC A 97 pC C (seeFigure21) V orV =V orGND,switchOFF,V =5V, C NOOFFcapacitance NC NO CC CC 28 pF NO(OFF) andT =25°C(seeFigure15) A C , NCandNOON V orV =V orGND,switchON,V =5V, NC(ON) NC NO CC CC 112 pF C capacitance andT =25°C(seeFigure15) NO(ON) A V =V orGND,switchON,V =5V,andT =25°C C COMONcapacitance COM CC CC A 112 pF COM(ON) (seeFigure15) Digitalinput C V =V orGND,andT =25°C(seeFigure15) 3 pF I capacitance IN CC A R =50Ω,switchON,V =5V,andT =25°C BW Bandwidth L CC A 55 MHz (seeFigure18) R =50Ω,f=1MHz,V =5V,andT =25°C O OFFisolation L CC A –63 dB ISO (seeFigure19) R =50Ω,f=1MHz,V =5V,andT =25°C X Crosstalk L CC A –63 dB TALK (seeFigure20) Totalharmonic R =600Ω,C =50pF,f=20Hzto20kHz,V =5V, 0.003 THD L L CC distortion andT =25°C(seeFigure22) % A SUPPLY Positivesupply ICC V =V orGND,V =5.5V,andT =–40°Cto85°C 10 µA current IN CC CC A 6 SubmitDocumentationFeedback Copyright©2008–2016,TexasInstrumentsIncorporated ProductFolderLinks:TS5A12301E

TS5A12301E www.ti.com SCES707C–AUGUST2008–REVISEDDECEMBER2016 6.6 Electrical Characteristics – 3.3-V Supply V =3Vto3.6VandT =–40°Cto85°C(unlessotherwisenoted)(1) CC A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT ANALOGSWITCH V orV =2V,I =–100mA, T =25°C 0.75 0.9 NO NC COM A r ON-stateresistance switchON,andV =3V(see Ω on CC Figure12) TA=–40°Cto85°C 1.2 ON-stateresistance VNOorVNC=2V,0.8V, TA=25°C 0.1 0.15 Δr matchbetween I =–100mA,switchON,and Ω on COM channels V =3V(seeFigure12) TA=–40°Cto85°C 0.15 CC 0≤(V orV )≤V ,I =–100mA,switchON, NO NC CC COM 0.2 V =3V,andT =25°C(seeFigure12) CC A ON-stateresistance ron(flat) flatness VNOorVNC=0.8V,2V, TA=25°C 0.1 0.2 Ω I =–100mA,switchON,and COM T =–40°Cto85°C 0.3 V =3V(seeFigure12) A CC V =1V,3V,V =3V,1V, T =25°C –20 2 20 NO COM A I , NOandNCOFF V =open,orV =1V,3V, NO(OFF) NC NC nA INC(OFF) leakagecurrent VCOM=3V,1V,VNO=open,switch TA=–40°Cto85°C –50 50 OFF,andV =3.6V(seeFigure13) CC NOandNC V orV =0Vto3.6V,V =3.6V T =25°C –10 10 I , NO NC COM A NO(PWROFF) PWROFFleakage to0V,switchOFF,andV =0V µA INC(PWROFF) current (seeFigure13) CC TA=–40°Cto85°C –10 10 V =1V,3V,V andV =open, T =25°C –20 2 20 NO NC COM A I NCandNOON orVNC=1V,3V,VNOand nA NO(ON) leakagecurrent VCOM=open,switchON,and TA=–40°Cto85°C –100 100 V =3.6V(seeFigure14) CC V =1V,V andV =open,or T =25°C –20 2 20 COMONleakage COM NO NC A I V =3V,V andV =open,and nA COM(ON) current VCCOCM=3.6V(sNeOeFigureNC14) TA=–40°Cto85°C –100 100 I COMOFFleakage VNOorVNC=0Vto3.6V,VCOM=3.6V TA=25°C –10 10 µA COM(PWROFF) current to0V,andVCC=0V(seeFigure13) TA=–40°Cto85°C –10 10 DIGITALCONTROLINPUT(IN) V Inputlogichigh V =3.6VandT =–40°Cto85°C 1.05 5.5 V IH CC A V Inputlogiclow V =3.6VandT =–40°Cto85°C 0 0.65 V IL CC A I , Inputleakage IH V =1.95Vor0V,V =3.6V,andT =–40°Cto85°C –0.05 0.5 µA I current I CC A IL r Inputresistance V =1.95V,V =3.6V,andT =–40°Cto85°C 6 MΩ IN I CC A DYNAMIC V =3.3Vand CC 72 175 t Turnontime VCOM=VCC,RL=50Ω,CL=35pF TA=25°C ns ON (seeFigure16) V =3Vand CC 185 T =–40°Cto85°C A V =3.3Vand CC 105 165 t Turnofftime VCOM=VCC,RL=50Ω,CL=35pF TA=25°C ns OFF (seeFigure16) V =3Vand CC 170 T =–40°Cto85°C A V =3.3Vand CC 1 16 30 t Break-before-make VCOM=VCC,RL=50Ω,CL=35pF, TA=25°C ns BBM time (seeFigure17) V =3Vand CC 1 35 T =–40°Cto85°C A Q Chargeinjection VGEN=0,RGEN=0,CL=1nF VCC=3.3Vand 97 pC C (seeFigure21) T =25°C A NOOFF V =V orGND,switchOFF,V =3.3V,andT =25°C C NO CC CC A 28 pF NO(OFF) capacitance (seeFigure15) C , NCandNOON V orV =V orGND,switchON,V =3.3V, NC(ON) NC NO CC CC 115 pF C capacitance andT =25°C(seeFigure15) NO(ON) A (1) Thealgebraicconvention(wherebythemostnegativevalueisaminimumandthemostpositivevalueisamaximum) Copyright©2008–2016,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:TS5A12301E

TS5A12301E SCES707C–AUGUST2008–REVISEDDECEMBER2016 www.ti.com Electrical Characteristics – 3.3-V Supply (continued) V =3Vto3.6VandT =–40°Cto85°C(unlessotherwisenoted)(1) CC A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT COMON V =V orGND,switchON,V =3.3V,andT =25°C C COM CC CC A 115 pF COM(ON) capacitance (seeFigure15) Digitalinput V =V orGND,V =3.3V,andT =25°C C IN CC CC A 3 pF I capacitance (seeFigure15) R =50Ω,switchON,V =3.3V,andT =25°C BW Bandwidth L CC A 54 MHz (seeFigure18) R =50Ω,f=1MHz,V =3.3V,andT =25°C O OFFisolation L CC A –63 dB ISO (seeFigure19) R =50Ω,f=1MHz,V =3.3V,andT =25°C X Crosstalk L CC A –63 dB TALK (seeFigure20) Totalharmonic R =600Ω,C =50pF,f=20Hzto20kHz,V =3.3V,and THD L L CC 0.004% distortion T =25°C(seeFigure22) A SUPPLY Positivesupply ICC V =1.95VorGND,V =3.6V,andT =25°C 10 µA current IN CC A 6.7 Electrical Characteristics – 2.5-V Supply V =2.25Vto2.75VandT =–40°Cto85°C(unlessotherwisenoted)(1) CC A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT ANALOGSWITCH V orV =1.8V,I =–100mA, T =25°C 1.1 1.3 NO NC COM A r ON-stateresistance switchON,andV =2.25V Ω on CC (seeFigure12) TA=–40°Cto85°C 1.6 ON-stateresistance V orV =1.8V,0.8V, T =25°C 0.15 0.2 NO NC A Δr matchbetween I =–100mA,switchON,and Ω on COM channels VCC=2.25V(seeFigure12) TA=–40°Cto85°C 0.2 0≤(V orV )≤V ,I =–100mA,switchON, NO NC CC COM 0.4 V =2.25V,andT =25°C(seeFigure12) CC A ON-stateresistance ron(flat) flatness VNOorVNC=0.8V,1V,1.8V, TA=25°C 0.25 0.5 Ω I =–100mA,switchON,and COM VCC=2.25V(seeFigure12) TA=–40°Cto85°C 0.6 V =0.5V,2.2V,V =2.2V,0.5V, T =25°C –20 2 20 NO COM A I , NOandNCOFF V =open,orV =0.5V,2.2V, NO(OFF) NC NC nA INC(OFF) leakagecurrent VCOM=2.2V,0.5V,VNO=open,switch TA=–40°Cto85°C –50 50 OFF,andV =2.75V(seeFigure13) CC NOandNC V orV =0Vto2.75V,V =2.75 T =25°C –10 10 I , NO NC COM A NO(PWROFF) PWROFFleakage Vto0V,switchOFF,andV =0V µA INC(PWROFF) current (seeFigure13) CC TA=–40°Cto85°C –10 10 V =0.5V,2.2V,V and T =25°C –20 2 20 NO NC A NCandNOON V =open,orV =2.2V,0.5V,V I COM NC NO nA NO(ON) leakagecurrent andVCOM=open,switchON,and TA=–40°Cto85°C –100 100 V =2.75V(seeFigure14) CC V =0.5V,V andV =open,or T =25°C –20 2 20 COM NO NC A COMONleakage V =2.2V,V and I COM NO nA COM(ON) current VNC=open,switchON,and TA=–40°Cto85°C –100 100 V =2.75V(seeFigure14) CC I COMOFFleakage VNOorVNC=0Vto2.75V,VCOM=2.75 TA=25°C –10 10 µA COM(PWROFF) current Vto0V,andVCC=0V(seeFigure13) TA=–40°Cto85°C –10 10 (1) Thealgebraicconvention(wherebythemostnegativevalueisaminimumandthemostpositivevalueisamaximum) 8 SubmitDocumentationFeedback Copyright©2008–2016,TexasInstrumentsIncorporated ProductFolderLinks:TS5A12301E

TS5A12301E www.ti.com SCES707C–AUGUST2008–REVISEDDECEMBER2016 Electrical Characteristics – 2.5-V Supply (continued) V =2.25Vto2.75VandT =–40°Cto85°C(unlessotherwisenoted)(1) CC A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT DIGITALCONTROLINPUT(IN) V Inputlogichigh V =2.75VandT =–40°Cto85°C 1.05 5.5 V IH CC A V Inputlogiclow V =2.75VandT =–40°Cto85°C 0 0.65 V IL CC A I , Inputleakage IH V =1.95Vor0,V =2.75V,andT =–40°Cto85°C –0.05 0.5 µA I current IN CC A IL r Inputresistance V =1.95V,V =2.75V,andT =–40°Cto85°C 6 MΩ IN IN CC A DYNAMIC V =2.5Vand CC 97 170 t Turnontime VCOM=VCC,RL=50Ω,andCL=35pF TA=25°C ns ON (seeFigure16) V =2.25Vand CC 175 T =–40°Cto85°C A V =2.5Vand CC 80 155 t Turnofftime VCOM=VCC,RL=50Ω,andCL=35pF TA=25°C ns OFF (seeFigure16) V =2.25Vand CC 160 T =–40°Cto85°C A V =2.5Vand CC 5 18 35 t Break-before-make VCOM=VCC,RL=50Ω,andCL=35pF TA=25°C ns BBM time (seeFigure17) V =2.25Vand CC 5 40 T =–40°Cto85°C A V =0,R =0,C =1nF,V =2.5V,andT =25°C Q Chargeinjection GEN GEN L CC A 82 pC C (seeFigure21) NOOFF V =V orGND,switchOFF,V =2.5V,andT =25°C C NO CC CC A 29 pF NO(OFF) capacitance (seeFigure15) C , NCandNOON V orV =V orGND,switchON,V =2.5V, NC(ON) NC NO CC CC 116 pF C capacitance andT =25°C(seeFigure15) NO(ON) A COMON V =V orGND,switchON,V =2.5V,andT =25°C C COM CC CC A 116 pF COM(ON) capacitance (seeFigure15) Digitalinput V =V orGND,V =2.5V,andT =25°C C IN CC CC A 3 pF I capacitance (seeFigure15) R =50Ω,switchON,V =2.5V,andT =25°C BW Bandwidth L CC A 54 MHz (seeFigure18) R =50Ω,f=1MHz,V =2.5V,andT =25°C O OFFisolation L CC A –63 dB ISO (seeFigure19) R =50Ω,f=1MHz,V =2.5V,andT =25°C X Crosstalk L CC A –63 dB TALK (seeFigure20) Totalharmonic R =600Ω,C =50pF,V =2.5V,f=20Hzto20kHz,and THD L L CC 0.008% distortion T =25°C(seeFigure22) A SUPPLY Positivesupply ICC V =1.95VorGND,V =2.75V,andT =–40°Cto85°C 10 µA current IN CC A Copyright©2008–2016,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:TS5A12301E

TS5A12301E SCES707C–AUGUST2008–REVISEDDECEMBER2016 www.ti.com 6.8 Typical Characteristics 1.2 1.2 T = 85°C A 1.0 1.0 0.8 0.8 T = 85°C Ω) TA= 25°C Ω) A ( 0.6 ( 0.6 n n ro ro TA= 25°C 0.4 0.4 TA=–40°C T =–40°C A 0.2 0.2 0.0 0.0 0.0 1.1 2.3 3.4 4.5 0.0 1.1 2.3 3.4 4.5 V (V) V (V) COM COM (V =2.25V) (V =3V) CC CC Figure1.r vsV Figure2.r vsV on COM on COM 1.2 6.0 Control input (IN) high 1.0 5.0 0.8 4.0 Ω) A) Control input (IN) low r(on 0.6 TA= 25°C TA= 85°C I(μ+3.0 0.4 2.0 0.2 1.0 T =–40°C A 0.0 0.0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 1.1 2.3 3.4 4.5 VCOM(V) VCC(V) (VCC=4.5V) (TA=25°C) Figure3.ronvsVCOM Figure4.ICCvsVCC 200 185 180 t (NO) 160 ON 165 140 s) 145 tON(NC) tOFF(NC) /t(ns)NOFF11028000 tOFF(NC) /t(nONOFF 11028555 O t t 60 tON(NC) 65 t (NO) t (NO) 40 ON OFF 45 20 tOFF(NO) 25 0 0 1 2 3 4 5 6 –40 –20 0 20 40 60 80 100 V (V) Temperature (°C) + Figure5.tON/tOFFvsSupplyVoltage Figure6.tON/tOFFvsTemperature 10 SubmitDocumentationFeedback Copyright©2008–2016,TexasInstrumentsIncorporated ProductFolderLinks:TS5A12301E

TS5A12301E www.ti.com SCES707C–AUGUST2008–REVISEDDECEMBER2016 Typical Characteristics (continued) 20 0 10 –2 0 V+= 5V –4 –10 Q(pC)C ––3200 V+= 2.5V V+= 3V ain (dB) ––86 G –40 –10 –50 –12 –60 –14 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.1 1 10 100 1000 Frequency (MHz) V (V) COM Figure7.ChargeInjection(Q )vsV Figure8.GainvsFrequency C COM 0 0 –10 –10 –20 –20 B) –30 dB) –30 ation (d –––654000 uation ( –––654000 u n Atten ––8700 Atte ––8700 –90 –90 –100 –100 0.1 1 10 100 1000 0.1 1 10 100 1000 Frequency (MHz) Frequency (MHz) Figure9.OFFIsolationvsFrequency Figure10.CrosstalkvsFrequency 0.01 0.009 0.008 V = 2.5V + 0.007 0.006 D (%) 00..000045 V+= 3V H T 0.003 0.002 V = 5V + 0.001 0 10 100 1000 10000 100000 Frequency (Hz) Figure11.TotalHarmonicDistortion(THD)vsFrequency Copyright©2008–2016,TexasInstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:TS5A12301E

TS5A12301E SCES707C–AUGUST2008–REVISEDDECEMBER2016 www.ti.com 7 Parameter Measurement Information V CC VNO NO COM V COM + Channel ON V V ro n = COMI NO VIN IN ICOM COM V = V or V IN IH IL + GND Figure12. ON-StateResistance(r ) on VCC VNO NO OFF-State Leakage Current + COM VCOM Channel OFF + VIN= VIHor VIL VIN IN + GND Figure13. OFF-StateLeakageCurrent(I ,I ,I ,I ) COM(OFF) NC(OFF) COM(PWROFF) NC(PWR(FF) VCC VNO NO + COM VCOM ON-State Leakage Current Channel ON VIN= VIHor VIL VIN IN + GND Figure14. ON-StateLeakageCurrent(I ,I ) COM(ON) NC(ON) 12 SubmitDocumentationFeedback Copyright©2008–2016,TexasInstrumentsIncorporated ProductFolderLinks:TS5A12301E

TS5A12301E www.ti.com SCES707C–AUGUST2008–REVISEDDECEMBER2016 Parameter Measurement Information (continued) VCC VNO NO Capacitance Meter VBIAS= VCCor GND and V = V or V IN IH IL COM COM VBIAS Capacitance is measured at NO, COM, and IN inputs during ON VIN IN and OFF conditions. GND Figure15. Capacitance(C,C ,C ,C ,C ) I COM(OFF) COM(ON) NC(OFF) NC(ON) VCC TEST RL CL VCOM NO VNO tON 50Ω 35 pF VCC COM VCOM CL(2) RL tOFF 50Ω 35 pF VCC VIN IN Logic VCC Input 50% 50% Logic Input(1) GND (VIN) 0 tON tOFF Switch 90% 90% Output (VNO) A. Allinputpulsesaresuppliedbygeneratorshavingthefollowingcharacteristics:PRR≤10MHz,Z =50Ω,t <5ns,t O r f <5ns. B. C includesprobeandjigcapacitance. L Figure16. Turnon(t )andTurnoffTime(t ) ON OFF Copyright©2008–2016,TexasInstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:TS5A12301E

TS5A12301E SCES707C–AUGUST2008–REVISEDDECEMBER2016 www.ti.com Parameter Measurement Information (continued) VCC Logic VIO VNCor VNO Input 50% NC or NO VCOM (VIN) 0 COM NC or NO Switch 90% 90% CL(2) RL Output V IN (VCOM) IN tBBM Logic Input(1) GND VNCor VNO= VCC/2 RL= 50Ω CL= 35 pF A. Allinputpulsesaresuppliedbygeneratorshavingthefollowingcharacteristics:PRR≤10MHz,Z =50Ω,t <5ns,t O r f <5ns. B. C includesprobeandjigcapacitance. L Figure17. Break-Before-MakeTime(t ) BBM VCC NetworkAnalyzer 50Ω VNO NO Channel ON: NO to COM COM VCOM VIN= VIHor VIL Source Signal NetworkAnalyzer Setup 50Ω VIN IN Source Power = 0 dBm (632-mV P-Pat 50-Ωload) + GND DC Bias = 350 mV Figure18. Bandwidth(BW) VCC NetworkAnalyzer 50Ω VNO NO Channel OFF: NO to COM 50Ω COM VCOM VIN= VIHor VIL Source Signal NetworkAnalyzer Setup 50Ω VIN IN Source Power = 0 dBm (632-mV P-Pat 50-Ωload) + GND DC Bias = 350 mV Figure19. OFFIsolation(O ) ISO 14 SubmitDocumentationFeedback Copyright©2008–2016,TexasInstrumentsIncorporated ProductFolderLinks:TS5A12301E

TS5A12301E www.ti.com SCES707C–AUGUST2008–REVISEDDECEMBER2016 Parameter Measurement Information (continued) VCC NetworkAnalyzer Channel ON: NC to COM 50Ω VNC NC Channel OFF: NO to COM VCOM VIN= VCCor GND Source Signal VNO NO 50Ω NetworkAnalyzer Setup VIN IN 50Ω + Source Power = 0 dBm GND (632-mV P-Pat 50-Ωload) DC Bias = 350 mV Figure20. Crosstalk(X ) TALK VCC Logic VIH Input OFF ON OFF RGEN (VI N ) VIL NO COM VCOM + VCOM ∆VCOM VGEN CL(1) VIN IN VGEN= 0 to VCC RGEN= 0 Logic CL= 1 nF Input(2) GND QC= CLX∆VCOM VIN= VIHor VIL A. Allinputpulsesaresuppliedbygeneratorshavingthefollowingcharacteristics:PRR≤10MHz,Z =50Ω,t <5ns,t O r f <5ns. B. C includesprobeandjigcapacitance. L Figure21. ChargeInjection(Q ) C Channel ON: COM to NO VIN= VIHorVIL RL= 600Ω VSOURCE= VCCP-P fSOURCE= 20 Hz to 20 kHz CL= 50 pF VCC/2 AudioAnalyzer NO Source COM Signal 600Ω CL(1) VIN IN 600Ω −VCC/2 A. C includesprobeandjigcapacitance. L Figure22. TotalHarmonicDistortion(THD) Copyright©2008–2016,TexasInstrumentsIncorporated SubmitDocumentationFeedback 15 ProductFolderLinks:TS5A12301E

TS5A12301E SCES707C–AUGUST2008–REVISEDDECEMBER2016 www.ti.com 8 Detailed Description 8.1 Overview The TS5A12301E device is a bidirectional, 1-channel, 1:2 mux, or single-pole double-throw (SPDT) analog switch. This switch offers low ON-state resistance and excellent THD performance, which makes it great for interfacingwithanADC. 8.2 Functional Block Diagram V NC CC COM GND IN NO Copyright © 2016,Texas Instruments Incorporated 8.3 Feature Description 8.3.1 Isolation Isolation in power-down mode prevents current leakage through the device's signal path when V = 0 V. This CC allows signals to be present on the COM, NO, or NC pins before the device is powered up without damaging the device. 8.3.2 1.8-VCompatibleLogic TheTS5A12301Esupports1.8-VlogicirrespectivetothesupplyvoltageappliedtotheIC. 8.3.3 IntegratedControlInputPulldown There is an integrated 6-MΩ pulldown resistor on the digital control input pin (IN) to keep the device in a known logicstateduringpowerupwithoutneedinganexternalcomponent. 8.4 Device Functional Modes Table1liststhefunctionalmodesoftheTS5A12301E. Table1.FunctionTable NCTOCOM, NOTOCOM, IN COMTONC COMTONO LorOpen ON OFF H OFF ON 16 SubmitDocumentationFeedback Copyright©2008–2016,TexasInstrumentsIncorporated ProductFolderLinks:TS5A12301E

TS5A12301E www.ti.com SCES707C–AUGUST2008–REVISEDDECEMBER2016 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validateandtesttheirdesignimplementationtoconfirmsystemfunctionality. 9.1 Application Information Theswitchisbidirectional,sotheNO,NC,andCOMpinsmaybeusedaseitherinputsoroutputs. 9.2 Typical Application 5 V 0.1 (cid:133)F GND Vcc NO Device 1 COM TS5A12301E GPU GPIO IN NC Device 2 GND Copyright © 2016, Texas Instruments Incorporated Figure23. ApplicationSchematic 9.2.1 DesignRequirements This TS5A12301E application may be properly operated without any external components. Unused pins (for example, COM, NC, and NO) may be left floating. Digital control pin (IN) has an integrated 6-MΩ pulldown resistor,sonoexternalcomponentisrequiredtokeepthelogicpininaknownstate. 9.2.2 DetailedDesignProcedure To ensure proper performance, keep all signals passing through the switch within the ranges specified in RecommendedOperatingConditions. Copyright©2008–2016,TexasInstrumentsIncorporated SubmitDocumentationFeedback 17 ProductFolderLinks:TS5A12301E

TS5A12301E SCES707C–AUGUST2008–REVISEDDECEMBER2016 www.ti.com Typical Application (continued) 9.2.3 ApplicationCurve 1.2 1.0 0.8 Ω) ( 0.6 ron TA= 25°C TA= 85°C 0.4 0.2 T =–40°C A 0.0 0.0 1.1 2.3 3.4 4.5 V (V) COM V =4.5V CC Figure24.r vsV on COM 10 Power Supply Recommendations The TS5A12301E does not have power sequencing requirements. If there is a voltage present on the COM, NC, and NO pins before power is supplied to the VCC pin, the isolation feature in power-down mode (V = 0) CC protectsthedeviceandsignalpath. Although it is not required, power-supply bypassing improves noise margin and prevents switching noise propagation from the VCC supply to other components. A 0.1-µF capacitor, connected from VCC to GND, is adequateformostapplications. 11 Layout 11.1 Layout Guidelines High-speed switches require proper layout and design procedures for optimum performance. Reduce stray inductance and capacitance by keeping traces short and wide. Ensure that bypass capacitors are placed as closetothedeviceaspossible.Uselargegroundplaneswherepossible. 11.2 Layout Example Via to power plane To device 1 Vcc NC Via to ground plane To common signal COM GND To system controller To device 2 IN NO Figure25. TS5A12301ELayout 18 SubmitDocumentationFeedback Copyright©2008–2016,TexasInstrumentsIncorporated ProductFolderLinks:TS5A12301E

TS5A12301E www.ti.com SCES707C–AUGUST2008–REVISEDDECEMBER2016 12 Device and Documentation Support 12.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed.Forchangedetails,reviewtherevisionhistoryincludedinanyreviseddocument. 12.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TIE2E™OnlineCommunity TI'sEngineer-to-Engineer(E2E)Community.Createdtofostercollaboration amongengineers.Ate2e.ti.com,youcanaskquestions,shareknowledge,exploreideasandhelp solveproblemswithfellowengineers. DesignSupport TI'sDesignSupport QuicklyfindhelpfulE2Eforumsalongwithdesignsupporttoolsand contactinformationfortechnicalsupport. 12.3 Trademarks E2EisatrademarkofTexasInstruments. Allothertrademarksarethepropertyoftheirrespectiveowners. 12.4 Electrostatic Discharge Caution Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. 12.5 Glossary SLYZ022—TIGlossary. Thisglossarylistsandexplainsterms,acronyms,anddefinitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of thisdocument.Forbrowser-basedversionsofthisdatasheet,refertotheleft-handnavigation. Copyright©2008–2016,TexasInstrumentsIncorporated SubmitDocumentationFeedback 19 ProductFolderLinks:TS5A12301E

PACKAGE OPTION ADDENDUM www.ti.com 25-Oct-2016 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) TS5A12301EYFPR ACTIVE DSBGA YFP 6 3000 Green (RoHS SNAGCU Level-1-260C-UNLIM -40 to 85 (3W2 ~ 3W7 ~ 3WN) & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 25-Oct-2016 Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 18-Jan-2020 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) TS5A12301EYFPR DSBGA YFP 6 3000 178.0 9.2 0.89 1.29 0.62 4.0 8.0 Q1 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 18-Jan-2020 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) TS5A12301EYFPR DSBGA YFP 6 3000 220.0 220.0 35.0 PackMaterials-Page2

PACKAGE OUTLINE YFP0006 DSBGA - 0.5 mm max height SCALE 10.000 DIE SIZE BALL GRID ARRAY B E A BALL A1 CORNER D C 0.5 MAX SEATING PLANE 0.19 0.13 BALL TYP 0.05 C 0.4 TYP SYMM C D: Max = 1.19 mm, Min = 1.13 mm 0.8 TYP B SYMM E: Max = 0.79 mm, Min = 0.73 mm 0.4 TYP A 0.25 6X 0.21 1 2 0.015 C A B 4223410/A 11/2016 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. www.ti.com

EXAMPLE BOARD LAYOUT YFP0006 DSBGA - 0.5 mm max height DIE SIZE BALL GRID ARRAY (0.4) TYP 6X ( 0.23) 1 2 A (0.4) TYP B SYMM C SYMM LAND PATTERN EXAMPLE SCALE:50X ( 0.23) 0.05 MAX 0.05 MIN METAL UNDER METAL SOLDER MASK SOLDER MASK ( 0.23) OPENING SOLDER MASK OPENING NON-SOLDER MASK SOLDER MASK DEFINED DEFINED (PREFERRED) SOLDER MASK DETAILS NOT TO SCALE 4223410/A 11/2016 NOTES: (continued) 3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints. For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009). www.ti.com

EXAMPLE STENCIL DESIGN YFP0006 DSBGA - 0.5 mm max height DIE SIZE BALL GRID ARRAY (0.4) TYP 6X ( 0.25) (R0.05) TYP 1 2 A (0.4) TYP B SYMM METAL TYP C SYMM SOLDER PASTE EXAMPLE BASED ON 0.1 mm THICK STENCIL SCALE:50X 4223410/A 11/2016 NOTES: (continued) 4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. www.ti.com

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