STW24NK55Z Ω N-channel 550 V - 0.18 - 23 A - TO-247 Zener-protected SuperMESH™ Power MOSFET Features Type V R I Pw DSS DS(on) D STW24NK55Z 550 V <0.22 Ω 23 A 285 W ) s ( ■ Extremely high dv/dt capability t c ■ 100% avalanche tested 3u 1d2 ■ Gate charge minimized o TrO-247 ■ Very low intrinsic capacitances P ■ Very good manufacturing repeatability e t e Application l o ■ Switching applications s b O Description Figure 1. Internal schematic diagram - ) The SuperMESH™ series is obtained throsugh an extreme optimization of ST’s well estatb(lished c strip-based PowerMESH™ layout. In addition to u pushing on-resistance significdantly down, special care is taken to ensure a voery good dv/dt r capability for the mostP demanding applications. Such series comp lements ST full range of high e voltage MOSFETs. t e l o s b O Table 1. Device summary Order code Marking Package Packaging STW24NK55Z 24NK55Z TO-247 Tube January 2008 Rev 1 1/12 www.st.com 12

Contents STW24NK55Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 ) s 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (. . . . . . 9 t c u d 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 o r P e t e l o s b O - ) s ( t c u d o r P e t e l o s b O 2/12

STW24NK55Z Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 550 V DS GS V Gate-source voltage ± 30 V GS I Drain current (continuous) at T = 25 °C 23 A D C I Drain current (continuous) at T =100 °C 10.35 A D C ) I (1) Drain current (pulsed) 92 s A DM ( t P Total dissipation at T = 25 °C 285 c W TOT C u Derating factor 2.d27 W/°C o dv/dt(2) Peak diode recovery voltage slope r 4.5 V/ns P T Storage temperature -55 to 150°C °C stg e TJ Max. perating junction temperature e t 150 °C l o 1. Pulse width limited by safe operating area s 2. ISD ≤ 23 A, di/dt ≤ 200 A/µs,VDD= 80% V(BR)DSS b O Table 3. Thermal data - ) Symbol sParameter Value Unit ( t R Thermal rescistance junction-case max 0.44 °C/W thj-case u R Thermdal resistance junction-ambient max 50 °C/W thj-a o Tl P rMaximum lead temperature for soldering purpose 300 °C e Ttable 4. Avalanche characteristics e l o Symbol Parameter Value Unit s b Avalanche current, repetitive or not-repetitive O IAR (pulse width limited by Tj Max) 23 A Single pulse avalanche energy E 400 mJ AS (starting Tj=25 °C, ID=IAR, VDD=50 V) 3/12

Electrical characteristics STW24NK55Z 2 Electrical characteristics (T = 25 °C unless otherwise specified) CASE Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V(BR)DSS voltage ID = 1 mA, VGS= 0 550 V Zero gate voltage drain VDS = Max rating, 1 µA I DSS current (VGS = 0) VDS = Max rating @125 °C 50 s )µA ( Gate body leakage current ct IGSS (V = 0) VGS = ±20 V u ±10 µA DS d VGS(th) Gate threshold voltage VDS= VGS, ID = 100 µA 3 o 3.75 4.5 V r P Static drain-source on RDS(on) resistance VGS= 10 V, ID= 11.5 Ae 0.18 0.22 Ω t e l o Table 6. Dynamic s b Symbol Parameter Test conditions Min. Typ. Max. Unit O gfs (1) Forward transconductance- VDS =15 V, ID = 11.5 A 20 S ) C Input capacitance s iss ( 4397.5 pF Coss Output capaccittance VDS =25 V, f=1 MHz, 480.5 pF Crss Rcaepvaecrsidtea ntrcuaensfer VGS=0 116 pF o Coss eq(2P). rEcaqpuaivcaitlaennct eoutput VGS=0, VDS =0 to 480 V 250 pF e t RG Intrinsic gate resistance f=1 MHz, open drain 2.3 Ω e ol Qg Total gate charge VDD= 440 V, ID = 23 A 130 nC s Qgs Gate-source charge VGS =10 V 25 nC b O Qgd Gate-drain charge (see Figure 15) 76 nC td(on) Turn-on delay time 30 ns V = 275 V, I =11.5 A, tr Rise time RDD= 4.7 Ω, VD =10 V 35 ns t Turn-off delay time G GS 136 ns d(off) (see Figure 14) t Fall time 88 ns f 1. Pulsed: pulse duration=300 µs, duty cycle 1.5% 2. C is defined as a constant equivalent capacitance giving the same charging time as C when V oss eq. oss DS increases from 0 to 80% V DSS 4/12

STW24NK55Z Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 23 A I (1) Source-drain current (pulsed) 92 A SDM VSD(2) Forward on voltage ISD= 23 A, VGS=0 1.6 V trr Reverse recovery time ISD= 23 A, VDD= 50 V 508 ns Qrr Reverse recovery charge di/dt = 100 A/µs, 7.4 µC I Reverse recovery current (see Figure 18) 29 A RRM ) s trr Reverse recovery time ISD= 23 A, 608 t( ns di/dt = 100 A/µs, c Qrr Reverse recovery charge 9.u7 µC V = 50 V, Tj=150 °C I Reverse recovery current DD d31.8 A RRM (see Figure 18) o r P 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% e t e l o Table 8. Gate-source Zener diode s b Symbol Parameter Test conditions Min. Typ. Max. Unit O Igs=±1 mA BV (1) Gate-source breakdown v-oltage 30 V GSO (open drain) ) s 1. The built-in back-to-back Zen(er diodes have specifically been designed to enhance not only the device’s ESD capability, but also ctot make them safely absorb possible voltage transients that may occasionally be applied from gate to usource. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the d usage of external components. o r P e t e l o s b O 5/12

Electrical characteristics STW24NK55Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ) s ( t c u d o r P e Figure 4. Output characteristics Figure 5. Transfer characteristics t e l o ID(A) HV41790 sID(A) HV41795 b 70 O 70 VGS =10V VDS = 20V 60 - 60 ) 7V s 50 50 ( t c 40 40 u d 30 30 o r 6V 20 P 20 10 e 10 t 5V e 0 0 ol0 5 10 15 20 25 30 VDS(V) 0 2 4 6 8 10 VGS(V) s Fbigure 6. Normalized BV vs temperature Figure 7. Static drain-source on resistance DSS O HV41880 RDS(on) (Ω) 0.18 0.15 0.14 0.12 5 10 15 20 ID(A) 6/12

STW24NK55Z Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations HV41800 VGS (V) 12 VDD=440V ID=23A 10 VGS=10V 8 6 4 ) s ( 2 t c u 0 d 0 50 100 150 Qg (nC) o r Figure 10. Normalized gate threshold voltage Figure 11. NormalizPed on resistance vs vs temperature tempe rature e t e l o s b O - ) s ( t c u d o r P e t e Figureo l12. Maximum avalanche energy vs Figure 13. Source-drain diode forward s temperature characteristics b O 45EA0S HV41780 1.19999VS7D HV41850 (mJ) (V) 400 0.999919.07 350 Tj = -50˚C 300 0.799909.88 25˚C 250 0.599909.68 200 150˚C 150 0.399909.49 100 0.199909.29 50 0 0.0000000 0 30 60 90 120 150 TJ (˚C) 0 5 10 15 20 ID(A) 7/12

Test circuits STW24NK55Z 3 Test circuits Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit resistive load ) s ( t c u d o r P e t Figure 16. Test circuit for inductive load Figure 17. Uenclamped Inductive load test l switching and diode recovery times o circuit s b O - ) s ( t c u d o r P e t e l o s b Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform O 8/12

STW24NK55Z Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( t c u d o r P e t e l o s b O - ) s ( t c u d o r P e t e l o s b O 9/12

Package mechanical data STW24NK55Z TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 ) b 1.0 1.40 0.039 0.055s ( b1 2.0 2.40 0.079 t0.094 c b2 3.0 3.40 0.118 0.134 u c 0.40 0.80 0.015 d 0.03 D 19.85 20.15 0.781 o 0.793 E 15.45 15.75 0.608 r 0.620 P e 5.45 0.214 L 14.20 14.80 0.5e60 0.582 t L1 3.70 4.30 e 0.14 0.17 L2 18.50 ol 0.728 øP 3.55 3.6s5 0.140 0.143 øR 4.50 b5.50 0.177 0.216 O S 5.50 0.216 - ) s ( t c u d o r P e t e l o s b O 10/12

STW24NK55Z Revision history 5 Revision history Table 9. Document revision history Date Revision Changes 04-Jan-2008 1 First release ) s ( t c u d o r P e t e l o s b O - ) s ( t c u d o r P e t e l o s b O 11/12

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