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  • 型号: STTH810DI
  • 制造商: STMicroelectronics
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STTH810DI产品简介:

ICGOO电子元器件商城为您提供STTH810DI由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STTH810DI价格参考。STMicroelectronicsSTTH810DI封装/规格:二极管 - 整流器 - 单, 标准 通孔 二极管 1000V 8A TO-220Ins。您可以下载STTH810DI参考资料、Datasheet数据手册功能说明书,资料中有STTH810DI 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE ULT FAST 1KV 8A TO220AB整流器 Ultrafast recovery high voltage diode

产品分类

单二极管/整流器分离式半导体

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,整流器,STMicroelectronics STTH810DI-

数据手册

点击此处下载产品Datasheet

产品型号

STTH810DI

不同If时的电压-正向(Vf)

2V @ 8A

不同 Vr、F时的电容

-

不同 Vr时的电流-反向漏电流

5µA @ 1000V

二极管类型

标准

产品

Ultra Fast Recovery Rectifiers

产品目录页面

点击此处下载产品Datasheet

产品种类

整流器

供应商器件封装

TO-220AB

其它名称

497-5163-5

其它有关文件

http://www.st.com/web/catalog/sense_power/FM64/CL830/SC8/PF130136?referrer=70071840

包装

管件

反向恢复时间(trr)

85ns

反向电压

100 V

反向电流IR

5 uA

商标

STMicroelectronics

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-3

封装/箱体

TO-220-3 FP

工作温度-结

175°C (最大)

工厂包装数量

1000

恢复时间

85 ns

最大工作温度

+ 175 C

最大浪涌电流

60 A

最小工作温度

- 65 C

标准包装

50

正向电压下降

2 V

正向连续电流

8 A

热阻

4.1°C/W Jc

电压-DC反向(Vr)(最大值)

1000V(1kV)

电流-平均整流(Io)

8A

系列

STTH810

速度

快速恢复 =< 500 ns,> 200mA(Io)

配置

Single

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PDF Datasheet 数据手册内容提取

STTH810 Ultrafast recovery - high voltage diode Main product characteristics A K I 8 A F(AV) V 1000 V RRM T 175° C j V (typ) 1.30 V F t (typ) 47 ns rr A A Features and benefits K K TO-220AC TO-220FPAC ■ Ultrafast, soft recovery STTH810D STTH810FP ■ Very low conduction and switching losses ■ High frequency and/or high pulsed current operation K ■ High reverse voltage capability ■ High junction temperature A A ■ Insulated packages: NC – TO-220Ins K – Electrical insulation = 2500 V RMS D2PAK TO-220Ins Capacitance = 7 pF STTH810G STTH810DI – TO-220FPAC Electrical insulation = 2500 V RMS Capacitance = 12 pF Order codes Description Part Number Marking The high quality design of this diode has produced a device with low leakage current, STTH810D STTH810D regularly reproducible characteristics and intrinsic STTH810G STTH810G ruggedness. These characteristics make it ideal for heavy duty applications that demand long term STTH810G-TR STTH810G reliability. STTH810FP STTH810FP Such demanding applications include industrial power supplies, motor control, and similar STTH810DI STTH810DI mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/11 www.st.com 11

Characteristics STTH810 1 Characteristics Table 1. A bsolute ratings (limiting values at 25° C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM TO-220AC / D2PAK / TO-220FPAC 30 I RMS forward current A F(RMS) TO-220AC Ins 20 TO-220AC / D2PAK T = 130° C c I Average forward current, δ = 0.5 TO-220FPAC T = 75° C 8 A F(AV) c TO-220AC Ins T = 105° C c I Repetitive peak forward current t = 5 µs, F = 5 kHz square 100 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 60 A FSM p T Storage temperature range -65 to + 175 °C stg T Maximum operating junction temperature 175 °C j Table 2. T hermal parameters Symbol Parameter Value Unit TO-220AC / D2PAK 2.5 R Junction to case TO-220FPAC 5.8 °C/W th(j-c) TO-220AC Ins 4.1 Table 3. S tatic electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25° C 5 I (1) Reverse leakage current j V = V µA R R RRM T = 125° C 2 20 j T = 25° C 2 j V (2) Forward voltage drop T = 100° C I = 8 A 1.4 1.8 V F j F T = 150° C 1.3 1.7 j 1. Pulse test: t = 5 ms, δ < 2 % p 2. Pulse test: t = 380 µs, δ < 2 % p To evaluate the conduction losses use the following equation: P = 1.3 x I + 0.05 I 2 F(AV) F (RMS) 2/11

STTH810 Characteristics Table 4. D ynamic characteristics Symbol Parameter Test conditions Min. Typ Max. Unit I = 1 A, dI /dt = -50 A/µs, F F 64 85 V = 30 V, T = 25° C R j t Reverse recovery time ns rr I = 1 A, dI /dt = -100 A/µs, F F 47 65 V = 30 V, T = 25° C R j I = 8 A, dI /dt = -200 A/µs, I Reverse recovery current F F 12 16 A RM V = 600 V, T = 125° C R j I = 8 A, dI /dt = -200 A/µs, S Softness factor F F 2 V = 600 V, T = 125° C R j I = 8 A dI /dt = 50 A/µs t Forward recovery time F F 300 ns fr V = 1.5 x V , T = 25° C FR Fmax j I = 8 A, dI /dt = 50 A/µs, F F V Forward recovery voltage 5.5 V FP T = 25° C j Figure 1. C onduction losses versus Figure 2. Forward voltage drop versus average current forward current P(W) IFM(A) 18 80 =0.05 =0.1 =0.2 =0.5 =1 16 70 Tj=150°C 14 (Maximum values) 60 12 10 50 (TypTijc=a1l5v0a°lCues) 40 Tj=25°C 8 (Maximum values) 30 6 4 T 20 2 IF(AV)(A) 10 VFM(V) 0 0 0 1 2 3 4 5 6 7 8 9 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 3. R elative variation of thermal Figure 4. Relative variation of thermal impedance junction to case impedance junction to case versus versus pulse duration pulse duration Zth(j-c)/Rth(j-c) Zth(j-c)/Rth(j-c) 1.0 1.0 0.9 SDinOg-l2e2 p0uAlsBe 0.9 TSOin-2g2le0 pFuPlAseB 0.8 D²PAK 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 tp(s) 0.1 tp(s) 0.0 0.0 1.E-03 1.E-02 1.E-01 1.E+00 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 3/11

Characteristics STTH810 Figure 5. P eak reverse recovery current Figure 6. Reverse recovery time versus dI /dt F versus dI /dt (typical values) (typical values) F IRM(A) trr(ns) 25 500 TVjR==162050°CV IF= 2 x IF(AV) 450 TVjR==162050°CV 20 400 IF= 2 xIF(AV) IF= IF(AV) 350 15 IF=0.5 x IF(AV) 235000 IF=IF(AV) 10 200 150 5 100 IF=0.5 xIF(AV) dIF/dt(A/µs) 50 dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 Figure 7. R everse recovery charges Figure 8. Softness factor versus dI /dt F versus dI /dt (typical values) (typical values) F Qrr(µC) S factor 2.5 3.0 2.0 TVjR==162050°CV IF= 2 x IF(AV) IFTV=jR=2=1 62x0 5I0F°(CVAV) 2.5 1.5 IF= IF(AV) 2.0 1.0 IF=0.5 x IF(AV) 1.5 0.5 dIF/dt(A/µs) dIF/dt(A/µs) 0.0 1.0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 Figure 9. R elative variations of dynamic Figure 10. Transient peak forward voltage parameters versus junction versus dI /dt (typical values) F temperature VFP(V) 45 2.0 11..68 Sfactor RefereVInFRc==e 6I:F0T(A0jV=V)125°C 3450 TIFj==1 2IF5(A°VC) 1.4 30 1.2 25 1.0 20 0.8 0.6 IRM 15 0.4 10 tRR 0.2 QRR Tj(°C) 5 dIF/dt(A/µs) 0.0 0 25 50 75 100 125 0 100 200 300 400 500 4/11

STTH810 Characteristics Figure 11. F orward recovery time versus dI /dt Figure 12. Junction capacitance versus F (typical values) reverse voltage applied (typical values) tfr(ns) C(pF) 600 100 IF= IF(AV) F=1MHz 550 VFR=T 1j=.51 2x5V°CFmax. VoscT=j=3205m°VCRMS 500 450 400 10 350 300 250 dIF/dt(A/µs) VR(V) 200 1 0 100 200 300 400 500 1 10 100 1000 F igure 13. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, e = 35 µm) cu Rth(j-a)(°C/W) 80 D²PAK 70 60 50 40 30 20 10 SCU(cm²) 0 0 5 10 15 20 25 30 35 40 5/11

Package information STTH810 2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.55 Nm (TO-220AC, TC-220Ins, TO-220FPAC) Maximum torque value: 0.7 Nm (TO-220AC, TO-220Ins, TO-220FPAC) T able 5. T0-220AC dimensions DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 H2 A C 1.23 1.32 0.048 0.051 Ø I C D 2.40 2.72 0.094 0.107 L5 L7 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 L6 F1 1.14 1.70 0.044 0.066 L2 G 4.95 5.15 0.194 0.202 F1 L9 D H2 10.00 10.40 0.393 0.409 L4 L2 16.40 typ. 0.645 typ. F L4 13.00 14.00 0.511 0.551 M E L5 2.65 2.95 0.104 0.116 G L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. 0.102 typ. Diam. I 3.75 3.85 0.147 0.151 6/11

STTH810 Package information T able 6. T0-220Ins dimensions DIMENSIONS REF Millimeters Inches Min. Max. Min. Max. A 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 4.80 5.40 0.189 0.212 F 6.20 6.60 0.244 0.259 ØI 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 M 2.60 0.102 7/11

Package information STTH810 T able 7. T0-220FPAC dimensions DIMENSIONS REF Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 A B 2.5 2.7 0.098 0.106 H B D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 Dia F 0.75 1 0.030 0.039 L6 F1 1.15 1.70 0.045 0.067 L2 L7 G 4.95 5.20 0.195 0.205 L3 L5 G1 2.4 2.7 0.094 0.106 D F1 H 10 10.4 0.393 0.409 L4 L2 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 F E G1 L4 9.8 10.6 0.386 0.417 G L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 Dia. 3.00 3.20 0.118 0.126 8/11

STTH810 Package information T able 8. D2PAK dimensions DIMENSIONS REF. Millimeters Inches Min. Max Min. Max. A 4.40 4.60 0.173 0.181 A A1 2.49 2.69 0.098 0.106 E C2 A2 0.03 0.23 0.001 0.009 L2 B 0.70 0.93 0.027 0.037 D B2 1.14 1.70 0.045 0.067 L C 0.45 0.60 0.017 0.024 L3 A1 C2 1.23 1.36 0.048 0.054 B2 C R D 8.95 9.35 0.352 0.368 B E 10.00 10.40 0.393 0.409 G G 4.88 5.28 0.192 0.208 A2 2mm min. FLAT ZONE L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 V2 L3 1.40 1.75 0.055 0.069 M 2.40 3.20 0.094 0.126 R 0.40 typ. 0.016 typ. V2 0° 8° 0° 8° Figure 14. D2PAK footprint (all dimensions in mm) 16.90 10.30 5.08 1.30 3.70 8.90 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 9/11

Ordering information STTH810 3 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH810D STTH810D TO-220AC 1.86 g 50 Tube STTH810DI STTH810DI TO-220Ins 1.86 g 50 Tube STTH810FP STTH810FP TO-220FPAC 2.2 g 50 Tube STTH810G STTH810G D2PAK 1.48 g 50 Tube STTH810G-TR STTH810G D2PAK 1.48 g 1000 Tape & reel 4 Revision history Date Revision Description of Changes 02-Mar-2006 1 First issue. 10/11

STTH810 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11

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