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  • 型号: STTH12S06FP
  • 制造商: STMicroelectronics
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STTH12S06FP产品简介:

ICGOO电子元器件商城为您提供STTH12S06FP由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STTH12S06FP价格参考。STMicroelectronicsSTTH12S06FP封装/规格:二极管 - 整流器 - 单, 标准 通孔 二极管 600V 12A TO-220FPAC。您可以下载STTH12S06FP参考资料、Datasheet数据手册功能说明书,资料中有STTH12S06FP 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE UFAST 600V 12A TO220FP整流器 Turbo II Ultrafast High Volt Rec

产品分类

单二极管/整流器分离式半导体

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,整流器,STMicroelectronics STTH12S06FP-

数据手册

点击此处下载产品Datasheet

产品型号

STTH12S06FP

不同If时的电压-正向(Vf)

3.4V @ 12A

不同 Vr、F时的电容

-

不同 Vr时的电流-反向漏电流

30µA @ 600V

二极管类型

标准

产品

Ultra Fast Recovery Rectifiers

产品种类

整流器

供应商器件封装

TO-220FPAC

其它名称

497-12682-5
STTH12S06FP-ND

其它有关文件

http://www.st.com/web/catalog/sense_power/FM64/CL830/SC12/SS1654/PF183835?referrer=70071840

包装

管件

反向恢复时间(trr)

21ns

反向电压

600 V

反向电流IR

30 uA

商标

STMicroelectronics

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-2 全封装,隔离接片

封装/箱体

TO-220-2 FP

工作温度-结

175°C (最大)

工厂包装数量

50

恢复时间

21 ns

最大工作温度

+ 175 C

最大浪涌电流

100 A

最小工作温度

- 65 C

标准包装

50

正向电压下降

3.4 V

正向连续电流

12 A

热阻

4.6°C/W Jc

电压-DC反向(Vr)(最大值)

600V

电流-平均整流(Io)

12A

系列

STTH12S06

速度

快速恢复 =< 500 ns,> 200mA(Io)

配置

Single

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PDF Datasheet 数据手册内容提取

STTH12S06 Turbo 2 ultrafast high voltage rectifier T able 1. Main product characteristics I 12 A F(AV) V 600 V RRM I 6 A RM (typ.) T 175 °C j (max) V 1.5 V F (typ) t 14 ns rr (typ) Features and benefits A ■ Ultrafast recovery K ■ Low reverse recovery current TO-220FPAC STTH12S06FP ■ Reduces losses in diode and switching transistor ■ Low thermal resistance ■ Higher frequency operation ■ Insulated voltage: 1500 V RMS Description ST's STTH12S06 is a state of the art Ultrafast efficiency of the application. This allows designers recovery diode. By the use of 600 V Pt doping to reduce the size of their heatsinks. Planar technology, this diode will outperform the This device is also intended for applications in power factor correction circuits operating in power supplies and power conversions systems, hardswitching conditions. The extremely low and other power switching applications. reverse recovery current of the STTH12S06, reduces significantly the switching power losses of the MOSFET, and thus increases the T able 2. Absolute ratings (limiting values at 125 °C, unless otherwise stated) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I ) Average forward current 12 A F(AV I Surge non repetitive forward current t = 10 ms sinusoidal 100 A FSM p T Storage temperature range - 65 + 175 °C stg T Maximum operating junction temperature 175 °C j October 2007 Rev 1 1/6 www.st.com 6

Characteristics STTH12S06 1 Characteristics T able 3. Thermal resistances Symbol Parameter Value Unit Rth (j-c) Junction to case 4.6 °C/W T able 4. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 °C 30 j I Reverse leakage current V = 600 V µA R R T = 125 °C 35 400 j T = 25 °C 3.4 j V Forward voltage drop I = 12 A V F F T = 150 °C 1.5 1.9 j T able 5. Dynamic electrical characteristics Symbol Tests conditions Min. Typ. Max. Unit t I = 1 A dI /dt = - 200 A/µs V = 30 V 14 21 ns rr F F R V = 400 V I = 12A I R F 6.0 8.0 A RM dI /dt = - 200 A/µs F T = 125 °C S factor V = 200 V I = 12A j 0.3 R F Qrr dIF/dt = - 200 A/µs 160 nC Figure 1. Conduction losses versus Figure 2. Forward voltage drop versus average current forward current 34 P(W) 100 IFM(A) 3302 δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1 90 2268 80 ((MMaaxxTTiimmjj==uu11mm5500 vv°°aaCClluueess)) 24 70 22 20 60 1168 50 ((TTyyppTTiijjcc==aa11ll55vv00aa°°llCCuueess)) (MaTxijm=2u5m°Cvalues) 14 40 12 10 30 8 T 6 20 24 IF(AV)(A) δ=tp/T tp 10 VFM(V) 0 0 0 2 4 6 8 10 12 14 16 0 1 2 3 4 5 6 7 2/6

STTH12S06 Characteristics Figure 3. R elative variation of thermal Figure 4. Peak reverse recovery current impedance, junction to case, versus dI /dt (typical values) F versus pulse duration 1.0 Zth(j-c)/Rth(j-c) 12 IRM(A) 0.9 Single pulse 11 VIFR== 41020 AV 10 0.8 9 0.7 8 0.6 7 0.5 6 Tj=125°C 0.4 5 4 0.3 3 0.2 2 Tj=25°C 0.1 tp(s) 1 dIF/dt(A/µs) 0.0 0 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 10 100 1000 Figure 5. R everse recovery time versus Figure 6. Reverse recovery charges versus dI /dt (typical values) dI /dt (typical values) F F 120 tRR(ns) 260 QRR(nC) 100 VIFR== 41020 AV 222400 VIFR== 41020 AV 200 180 80 160 Tj=125°C 140 60 Tj=125°C 120 100 40 Tj=25°C 80 60 20 40 Tj=25°C dIF/dt(A/µs) 20 dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 550 600 10 100 1000 F igure 7. Junction capacitance versus reverse voltage applied (typical values) C(pF) 100 F=1MHz VoscT=j=3205m°VCRMS VR(V) 10 1 10 100 1000 3/6

Package information STTH12S06 2 Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.55 Nm ● Maximum torque value: 0.7 Nm In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. T able 6. TO-220FPAC dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 A B 2.5 2.7 0.098 0.106 H B D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 Dia F 0.75 1 0.030 0.039 L6 F1 1.15 1.70 0.045 0.067 L2 L7 G 4.95 5.20 0.195 0.205 L3 G1 2.4 2.7 0.094 0.106 L5 D H 10 10.4 0.393 0.409 F1 L4 L2 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 F E L4 9.8 10.6 0.386 0.417 G1 L5 2.9 3.6 0.114 0.142 G L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 Dia. 3.00 3.20 0.118 0.126 4/6

STTH12S06 Ordering information 3 Ordering information T able 7. Ordering information Part number Marking Package Weight Base qty Delivery mode STTH12S06FP STTH12S06FP TO-220FPAC 1.64 50 Tube 4 Revision history T able 8. Revision history Date Revision Changes 02-Oct-2007 1 Initial release. 5/6

STTH12S06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 6/6