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  • 型号: STTH10R04G-TR
  • 制造商: STMicroelectronics
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ICGOO电子元器件商城为您提供STTH10R04G-TR由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供STTH10R04G-TR价格参考¥9.15-¥18.72以及STMicroelectronicsSTTH10R04G-TR封装/规格参数等产品信息。 你可以下载STTH10R04G-TR参考资料、Datasheet数据手册功能说明书, 资料中有STTH10R04G-TR详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE ULTRA FAST 400V 10A D2PAK整流器 High Effecientcy Rectifier

产品分类

单二极管/整流器分离式半导体

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,整流器,STMicroelectronics STTH10R04G-TR-

数据手册

点击此处下载产品Datasheet

产品型号

STTH10R04G-TR

不同If时的电压-正向(Vf)

1.7V @ 10A

不同 Vr、F时的电容

-

不同 Vr时的电流-反向漏电流

10µA @ 400V

二极管类型

标准

产品

Ultra Fast Recovery Rectifiers

产品目录页面

点击此处下载产品Datasheet

产品种类

整流器

供应商器件封装

D2PAK

其它名称

497-7575-1

其它有关文件

http://www.st.com/web/catalog/sense_power/FM64/CL830/SC4/PF194122?referrer=70071840

包装

剪切带 (CT)

反向恢复时间(trr)

40ns

反向电压

400 V

反向电流IR

10 uA

商标

STMicroelectronics

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

TO-263-3,D²Pak(2 引线+接片),TO-263AB

封装/箱体

D2-PAK

工作温度-结

175°C (最大)

工厂包装数量

1000

恢复时间

40 ns

最大工作温度

+ 175 C

最大浪涌电流

100 A

最小工作温度

- 65 C

标准包装

1

正向电压下降

1.7 V

正向连续电流

10 A

热阻

3.5°C/W Jc

电压-DC反向(Vr)(最大值)

400V

电流-平均整流(Io)

10A

系列

STTH10R04

速度

快速恢复 =< 500 ns,> 200mA(Io)

配置

Single

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PDF Datasheet 数据手册内容提取

STTH10R04 High efficiency rectifier Datasheet - production data Description A K The device is an ultrafast recovery power rectifier dedicated to energy recovery in PDP application. It is especially designed for clamping function in energy recovery block. K K The compromise between forward voltage drop and recovery time offers optimized performance. Table 1: Device summary A A NC NC Symbol Value D2PAK IF(peak) 10 A VRRM 400 V Features Tj (max) 175 °C VF (typ) 1.15 V  Ultrafast recovery  Low power losses trr (typ.) 15 ns  High surge capability  Low leakage current  High junction temperature  ECOPACK®2 compliant component for D²PAK on demand August 2017 DocID13971 Rev 2 1/11 This is information on a product in full production. www.st.com

Characteristics STTH10R04 1 Characteristics Table 2: Absolute ratings (limiting values, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 400 V IF(RMS) Forward rms current 20 A TC = 135 °C IF(peak) Peak working forward current 10 A δ = 0.5 square wave IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 100 A Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature 175 °C Table 3: Thermal parameter Symbol Parameter Max. value Unit Rth(j-c) Junction to case 3.5 °C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 °C - 10 IR(1) Reverse leakage current VR = VRRM µA Tj = 125 °C - 10 100 Tj = 25 °C - 1.50 1.70 VF(2) Forward voltage drop IF = 10 A V Tj = 125 °C - 1.15 1.35 Notes: (1)Pulse test: tp = 5 ms, δ < 2% (2)Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 1.05 x I + 0.03 x I 2 F(AV) F (RMS) 2/11 DocID13971 Rev 2

STTH10R04 Characteristics Table 5: Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IF = 0.5 A, Irr = 0.25 A, - 15 20 Reverse recovery IR = 1 A trr time Tj = 25 °C IF = 1 A, ns VR = 30 V, - 40 dIF/dt = -50 A/μs IF = 10 A, Forward recovery tfr time Tj = 25 °C dIF/dt = 100 A/μs - 140 ns VFR = 1.1 x VFmax VFP Fvoolrtwagaerd recovery Tj = 25 °C IdFI F=/d 1t 0= A 1,0 0 A/μs - 3 V IRM Rcuervreenrst e recovery Tj = 125 °C IVFR = = 1 200 A0, V - 6.2 8.0 A Sfactor Softness factor dIF/dt = 200 A/μs - 0.3 - DocID13971 Rev 2 3/11

Characteristics STTH10R04 1.1 Characteristics (curves) Figure 1: Conduction losses versus average forward current Figure 2: Forward voltage drop versus forward current 18 P(W) 200 IF(A) δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1 180 16 Tj=125°C 160 (Maximumvalues) 14 140 12 120 Tj=125°C (Typicalvalues) 10 100 8 80 Tj=25°C 6 (Maximumvalues) 60 4 T 40 2 IF(AV)(A) δ=tp/T tp 20 VF(V) 0 0 0 2 4 6 8 10 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 3: Relative variation of thermal impedance Figure 4: Peak reverse recovery current versus junction to case versus pulse duration dIF/dt (typical values) 1.0 Zth(j-c)/Rth(j-c) 14 IRM(A) 0.9 Singlepulse 13 IF=IF(PEAK) 12 VR=200V 0.8 11 Tj=125°C 0.7 10 9 0.6 8 0.5 7 6 0.4 5 0.3 4 0.2 3 2 0.1 tP(s) 1 dIF/dt(A/µs) 0.0 0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 0 50 100 150 200 250 300 350 400 450 500 Figure 5: Reverse recovery time versus dIF/dt Figure 6: Reverse recovery charges versus dIF/dt (typical values) (typical values) 80 trr(ns) 300 Qrr(nC) 70 TVIFjR===1IF22(P05E0A°KCV) 250 TVIFjR===I1F22(P05E0A°KVC) 60 200 50 40 150 30 100 20 50 10 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 4/11 DocID13971 Rev 2

STTH10R04 Characteristics Figure 7: Reverse recovery softness factor versus Figure 8: Relative variation of dynamic parameters dIF/dt (typical values) versus junction temperature S factor 3.0 0.8 00..67 IFTV<jR=2=1x22I05F0(P°ECVAK) 2222....2468 Sfactor RefereVIFnR=c=eI:F2(TP0jE0=AKV1)25°C 2.0 0.5 1.8 1.6 0.4 1.4 1.2 0.3 1.0 0.8 IRM 0.2 0.6 0.4 0.1 0.2 Qrr Tj(°C) dIF/dt(A/µs) 0.0 0.0 25 50 75 100 125 0 50 100 150 200 250 300 350 400 450 500 Figure 9: Forward recovery voltage versus dIF/dt Figure 10: Forw(atrydp irceaclo vvaelruye tsi)me versus dIF/dt (typical values) 12 VFP(V) 200 tfr(ns) 1101 TIFj==1IF2(P5EA°KC) 116800 VFR=TIFj1==.11IF2x(P5EVA°FKC)max. 9 140 8 120 7 6 100 5 80 4 60 3 40 2 20 1 dIF/dt(A/µs) 0 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 Figure 12: Thermal resistance junction to ambient Figure 11: Junction capacitance versus reverse versus copper surface under tab voltage applied (typical values) 100 C(pF) 80 Rth(j-a)(°C/W) F=1MHz D²PAK VOSC=30mVRMS 70 EpoxyprintedboardFR4,copperthickness=35µm Tj=25°C 60 50 40 30 20 10 VR(V) SCu(cm²) 10 0 1 10 100 1000 0 5 10 15 20 25 30 35 40 DocID13971 Rev 2 5/11

Package information STTH10R04 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.  Cooling method: by conduction (C)  Epoxy meets UL94,V0 6/11 DocID13971 Rev 2

STTH10R04 Package information 2.1 D²PAK package information Figure 13: D²PAK package outline This package drawing may slightly differ from the physical package. However, all the specified dimensions are guaranteed. DocID13971 Rev 2 7/11

Package information STTH10R04 Table 6: D²PAK package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.36 4.60 0.172 0.181 A1 0.00 0.25 0.000 0.010 b 0.70 0.93 0.028 0.037 b2 1.14 1.70 0.045 0.067 c 0.38 0.69 0.015 0.027 c2 1.19 1.36 0.047 0.053 D 8.60 9.35 0.339 0.368 D1 6.90 8.00 0.272 0.311 D2 1.10 1.50 0.043 0.060 E 10.00 10.55 0.394 0.415 E1 8.10 8.90 0.319 0.346 E2 6.85 7.25 0.266 0.282 e 2.54 typ. 0.100 e1 4.88 5.28 0.190 0.205 H 15.00 15.85 0.591 0.624 J1 2.49 2.90 0.097 0.112 L 1.90 2.79 0.075 0.110 L1 1.27 1.65 0.049 0.065 L2 1.30 1.78 0.050 0.070 R 0.4 typ. 0.015 V2 0° 8° 0° 8° 8/11 DocID13971 Rev 2

STTH10R04 Package information Figure 14: D²PAK recommended footprint (dimensions in mm) DocID13971 Rev 2 9/11

Ordering information STTH10R04 3 Ordering information Table 7: Ordering information Order code Marking Package Weight Base qty. Delivery mode STTH10R04G-TR STTH10R04G D2PAK 1.38 g 1000 Tape and reel 4 Revision history Table 8: Document revision history Date Revision Changes 07-Nov-2007 1 First issue. Updated features and package silhouette. Minor text changes to improve readability. 08-Aug-2017 2 Updated Section 1: "Characteristics", Section 1.1: "Characteristics (curves)", Section 2: "Package information" and Section 3: "Ordering information". 10/11 DocID13971 Rev 2

STTH10R04 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID13971 Rev 2 11/11

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