STGF20NB60S PowerMESH™ IGBT, S series 600 V, 13 A low drop Datasheet - production data Features  Low on-voltage drop (V ) CE(sat)  High current capability Applications  Light dimmer  Static relays 3  Motor control 2 1 Description TO-220FP Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Figure 1: Internal schematic diagram PowerMESH™ IGBTs, with outstanding performance. The suffix “S” represents a series optimized to achieve minimum on-voltage drop for low frequency applications. Table 1: Device summary Order code Marking Package Packing STGF20NB60S GF20NB60S TO-220FP Tube December 2015 DocID9910 Rev 4 1/14 This is information on a product in full production. www.st.com

Contents STGF20NB60S Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220FP package information ...................................................... 11 5 Revision history ............................................................................ 13 2/14 DocID9910 Rev 4

STGF20NB60S Electrical ratings 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 600 V VECS Emitter-collector voltage (VGE = 0 V) -20 V VGE Gate-emitter voltage ±20 V Continuous collector current at TC = 25 °C 24 IC A Continuous collector current at TC = 100 °C 13 ICL Turn-off latching current 70 A ICM(1) Pulsed collector current 70 A PTOT Total dissipation at TC = 25 °C 40 W Insulation withstand voltage (RMS) from all three leads to VISO external heat sink (t = 1 s, TC = 25 °C) 2.5 kV TSTG Storage temperature range -55 to 150 °C TJ Operating junction temperature Notes: (1)Pulse width limited by safe operating area. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 3.1 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 DocID9910 Rev 4 3/14

Electrical characteristics STGF20NB60S 2 Electrical characteristics T = 25 °C unless otherwise specified C Table 4: Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Collector-emitter breakdown V(BR)CES voltage VGE = 0 V, IC = 250 µA 600 V V(BR)ECS Evomltiattgeer- collector breakdown VGE = 0 V, IC = 10 mA -20 VGE = 0 V, VCE = 600 V 10 ICES Collector cut-off current VGE = 0 V, VCE = 600 V, 100 µA TC = 125 °C IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±100 nA VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µA 2.5 5 V VGE = 15 V, IC = 20 A 1.25 1.7 Collector-emitter saturation VCE(sat) voltage VGE = 15 V, IC = 20 A, 1.2 V TJ = 150 °C Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit gfs(1) Forward transconductance VCE = 10 V, IC = 8 A - 20 - S Cies Input capacitance - 1820 - Coes Output capacitance VCE= 25 V, f = 1 MHz, - 167 - pF Reverse transfer VGE = 0 V Cres capacitance - 27 - Qg Total gate charge VCC = 480 V, IC = 20 A, - 83 115 Qge Gate-emitter charge VGE = 15 V (see Figure 17: - 10 - nC "Gate charge test circuit") Qgc Gate-collector charge - 27 - Notes: (1)Pulse duration= 300 μs, duty cycle 1.5 % Table 6: Inductive load switching on characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCC = 480 V, IC = 20 A, - 92 - ns tr Current rise time VGE = 15 V, RG = 100 Ω - 70 - ns (see Figure 16: "Test circuit (di/dt)on Turn-on current slope for inductive load switching") - 340 - A/µs td(on) Turn-on delay time VCC = 480 V, IC = 20 A, - 80 - ns tr Current rise time VGE = 15 V, RG = 100 Ω, - 73 - ns Tj = 125 °C (see Figure 16: "Test circuit for inductive load (di/dt)on Turn-on current slope - 320 - A/µs switching") 4/14 DocID9910 Rev 4

STGF20NB60S Electrical characteristics Table 7: Inductive load switching off characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit tc Cross-over time - 1.6 - VCC = 480 V, IC = 20 A, tr(Voff) Off voltage rise time VGE = 15 V, RG = 100 Ω - 0.8 - ns td(off) Turn-off delay time (see Figure 16: "Test circuit - 1.1 - for inductive load switching") tf Current fall time - 0.8 - tc Cross-over time VCC = 480 V, IC = 20 A, - 2.4 - tr(Voff) Off voltage rise time VGE = 15 V, RG = 100 Ω, - 1.1 - Tj = 125 °C (see Figure 16: ns td(off) Turn-off delay time "Test circuit for inductive load - 2.4 - tf Current fall time switching") - 1.2 - Table 8: Inductive load switching loss characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Eon(1) Turn-on switching loss VCC = 480 V, IC = 20 A, - 0.84 - Eoff(2) Turn-off switching loss VGE = 15 V, RG = 100 Ω - 7.4 - mJ (see Figure 18: "Switching Ets Total switching loss waveform") - 8.24 - Eon(1) Turn-on switching loss VCC = 480 V, IC = 20 A, - 0.86 - Eoff(2) Turn-off switching loss VGE = 15 V, RG = 100 Ω, - 11.5 - mJ Tj = 125 °C (see Figure 18: Ets Total switching loss "Switching waveform") - 12.36 - Notes: (1)Eon is the turn-on loss when a external diode is used in the test circuit in Figure 16: "Test circuit for inductive load switching". (2)Turn-off loss includes the tail of the collector current. DocID9910 Rev 4 5/14

Electrical characteristics STGF20NB60S 2.1 Electrical characteristics (curves) Figure 2: Output Characteristics Figure 3: Transfer Characteristics Figure 5: Normalized collector-emitter on Figure 4: Transconductance voltage vs temperature Figure 6: Collector-Emitter on voltage vs Figure 7: Normalized gate threshold vs collector current temperature 6/14 DocID9910 Rev 4

STGF20NB60S Electrical characteristics Figure 8: Normalized breakdown voltage vs Figure 9: Gate charge vs gate-emitter voltage temperature Figure 10: Capacitance variations Figure 11: Switching loss vs gate resistance Figure 12: Switching loss vs temperature Figure 13: Switching loss vs collector current DocID9910 Rev 4 7/14

Electrical characteristics STGF20NB60S Figure 14: Thermal impedance Figure 15: Turn-off SOA 8/14 DocID9910 Rev 4

STGF20NB60S Test circuits 3 Test circuits Figure 16: Test circuit for inductive load Figure 17: Gate charge test circuit switching V CC C A A 12 V 47 kΩ 1 kΩ 100 nF G L=100µF E B B C 3µ.F3 100µ0F VCC Vi≤ VGMAX IG=CONST 100 Ω D.U.T. G D.U.T 2200 + R E µF 2.7 kΩ VG G - 47 kΩ P 1 kΩ W AM01504v1 AM01505v1 Figure 18: Switching waveform DocID9910 Rev 4 9/14

Package information STGF20NB60S 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/14 DocID9910 Rev 4

STGF20NB60S Package information 4.1 TO-220FP package information Figure 19: TO-220FP package outline 7012510_Rev_K_B DocID9910 Rev 4 11/14

Package information STGF20NB60S Table 9: TO-220FP package mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 12/14 DocID9910 Rev 4

STGF20NB60S Revision history 5 Revision history Table 10: Document revision history Date Revision Changes 17-Dec-2004 2 New template, no content change 05-Aug-2005 3 Some values changed in table 6 Text and formatting changes throughout document On cover page: - updated Title, Features and Description Added Electrical ratings section heading In section Electrical ratings: 02-Dec-2015 4 - updated tables Absolute Maximum ratings and Thermal Data In section Electrical characteristics: - updated table Static characteristics Added section Package information Updated TO-220FP package information DocID9910 Rev 4 13/14

STGF20NB60S IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 14/14 DocID9910 Rev 4

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