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  • 型号: STD60NF3LLT4
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
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STD60NF3LLT4产品简介:

ICGOO电子元器件商城为您提供STD60NF3LLT4由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供STD60NF3LLT4价格参考¥5.51-¥5.51以及STMicroelectronicsSTD60NF3LLT4封装/规格参数等产品信息。 你可以下载STD60NF3LLT4参考资料、Datasheet数据手册功能说明书, 资料中有STD60NF3LLT4详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

MOSFET N-CH 30V 60A DPAK

产品分类

FET - 单

FET功能

逻辑电平门

FET类型

MOSFET N 通道,金属氧化物

品牌

STMicroelectronics

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

STD60NF3LLT4

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

STripFET™ II

不同Id时的Vgs(th)(最大值)

1V @ 250µA

不同Vds时的输入电容(Ciss)

2210pF @ 25V

不同Vgs时的栅极电荷(Qg)

40nC @ 4.5V

不同 Id、Vgs时的 RdsOn(最大值)

9.5 毫欧 @ 30A,10V

产品目录页面

点击此处下载产品Datasheet

供应商器件封装

D-Pak

其它名称

497-2476-2

功率-最大值

100W

包装

带卷 (TR)

安装类型

表面贴装

封装/外壳

TO-252-3,DPak(2 引线+接片),SC-63

标准包装

2,500

漏源极电压(Vdss)

30V

电流-连续漏极(Id)(25°C时)

60A (Tc)

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PDF Datasheet 数据手册内容提取

STD60NF3LL Ω N-channel 30V - 0.0075 - 60A - DPAK STripFET™ II Power MOSFET General features Type V R I DSS DS(on) D STD60NF3LL 60V <0.0095Ω 60A ■ Optimal R x Q trade-off @ 4.5V DS(ON) g 3 ■ Conduction losses reduced 1 ■ Switching losses reduced DPAK Description This application specific Power MOSFET is the third genaration of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When Internal schematic diagram used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. Applications ■ Switching application Order codes Part number Marking Package Packaging STD60NF3LLT4 D60NF3LL DPAK Tape & reel July 2006 Rev 2 1/13 www.st.com 13

Contents STD60NF3LL Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13

STD60NF3LL Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 30 V DS GS V Drain-gate voltage (R = 20 kΩ) 30 V DGR GS V Gate- source voltage ± 16 V GS I Drain current (continuous) at T = 25°C 60 A D C I Drain current (continuous) at T = 100°C 43 A D C I (1) Drain current (pulsed) 240 A DM P Total dissipation at T = 25°C 100 W tot C Derating Factor 0.67 W/°C E (2) Single pulse avalanche energy 700 mJ AS T Storage temperature stg -55 to 175 °C T Max. operating junction temperature j 1. Pulse width limited by safe operating area. 2. Starting Tj=25°C, I =30A, V =27.5V D DD Table 2. Thermal data Rthj-case Thermal resistance junction-case max 1.5 °C/W Rthj-amb Thermal resistance junction-to ambient max 100 °C/W T Maximum lead temperature for soldering purpose 300 °C J 3/13

Electrical characteristics STD60NF3LL 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V I = 250µA, V =0 30 V (BR)DSS breakdown voltage D GS V = Max rating Zero gate voltage DS 1 µA I V = Max rating, DSS drain current (V = 0) DS 10 µA GS T = 125°C C Gate-body leakage I V = ± 16V ±100 nA GSS current (V = 0) GS DS V Gate threshold voltage V = V , I = 250µA 1 V GS(th) DS GS D R Static drain-source on VGS = 10V, ID = 30A 0.0075 0.0095 Ω DS(on) resistance V = 4.5V, I = 30A 0.0085 0.0105 Ω GS D Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Forward g (1) V = 15V, I = 30A 30 S fs transconductance DS D Input capacitance C 2210 pF Ciss Output capacitance VDS = 25V, f = 1MHz, 635 pF Coss Reverse transfer VGS = 0 138 pF rss capacitance t Turn-on delay time 22 ns d(on) V = 15V, I = 30A t Rise time DD D 130 ns r R =4.7Ω V = 4.5V t Turn-off delay time G GS 36.5 ns d(off) (see Figure12) t Fall time 36.5 ns f Q Total gate charge V = 24V, I = 60A, 30 40 nC g DD D Q Gate-source charge V = 4.5V, R =4.7Ω 9 nC gs GS G Q Gate-drain charge (see Figure13) 12.5 nC gd 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 4/13

STD60NF3LL Electrical characteristics Table 5. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current I 60 A SD Source-drain current I (1) 240 A SDM (pulsed) V (2) Forward on voltage I = 60A, V = 0 1.2 V SD SD GS t Reverse recovery time I = 60A, di/dt = 100A/µs, 65 ns rr SD Q Reverse recovery charge V = 15V, T = 150°C 105 nC rr DD j I Reverse recovery current (see Figure14) 3.4 A RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 5/13

Electrical characteristics STD60NF3LL 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static drain-source on resistance 6/13

STD60NF3LL Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs vs temperature temperature Figure 11. Source-drain diode forward characteristics 7/13

Test circuit STD60NF3LL 3 Test circuit Figure 12. Switching times test circuit for Figure 13. Gate charge test circuit resistive load Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform 8/13

STD60NF3LL Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/13

Package mechanical data STD60NF3LL DPAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.9 0.025 0.035 b4 5.2 5.4 0.204 0.212 C 0.45 0.6 0.017 0.023 C2 0.48 0.6 0.019 0.023 D 6 6.2 0.236 0.244 D1 5.1 0.200 E 6.4 6.6 0.252 0.260 E1 4.7 0.185 e 2.28 0.090 e1 4.4 4.6 0.173 0.181 H 9.35 10.1 0.368 0.397 L 1 0.039 (L1) 2.8 0.110 L2 0.8 0.031 L4 0.6 1 0.023 0.039 R 0.2 0.008 V2 0° 8° 0° 8° 0068772-F 10/13

STD60NF3LL Packing mechanical data 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0.795 G 16.4 18.4 0.645 0.724 N 50 1.968 T 22.4 0.881 BASE QTY BULK QTY TAPE MECHANICAL DATA 2500 2500 mm inch DIM. MIN. MAX. MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 0.476 D 1.5 1.6 0.059 0.063 D1 1.5 0.059 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 1.574 W 15.7 16.3 0.618 0.641 11/13

Revision history STD60NF3LL 6 Revision history T able 6. Revision history Date Revision Changes 09-Sep-2004 4 Preliminary version 19-Jul-2006 5 New template, no content change 12/13

STD60NF3LL Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 13/13

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